EE101: BJT basics

M. B. Patil
mbpatil@ee.iitb.ac.in
www.ee.iitb.ac.in/~sequel

Department of Electrical Engineering

Indian Institute of Technology Bombay

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Emitter Collector Emitter Collector

p n p n p n

Base Base

pnp transistor npn transistor

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Emitter Collector Emitter Collector

p n p n p n

Base Base

pnp transistor npn transistor

* Bipolar: both electrons and holes contribute to conduction

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Emitter Collector Emitter Collector

p n p n p n

Base Base

pnp transistor npn transistor

* Bipolar: both electrons and holes contribute to conduction

* Junction: device includes two p-n junctions (as opposed to a “point-contact”
transistor, the first transistor)

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Emitter Collector Emitter Collector

p n p n p n

Base Base

pnp transistor npn transistor

* Bipolar: both electrons and holes contribute to conduction

* Junction: device includes two p-n junctions (as opposed to a “point-contact”
transistor, the first transistor)
* Transistor: “transfer resistor”
When Bell Labs had an informal contest to name their new invention, one engineer pointed
out that it acts like a resistor, but a resistor where the voltage is transferred across the
device to control the resulting current.
(http://amasci.com/amateur/trshort.html)

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Emitter Collector Emitter Collector

p n p n p n

Base Base

pnp transistor npn transistor

* Bipolar: both electrons and holes contribute to conduction

* Junction: device includes two p-n junctions (as opposed to a “point-contact”
transistor, the first transistor)
* Transistor: “transfer resistor”
When Bell Labs had an informal contest to name their new invention, one engineer pointed
out that it acts like a resistor, but a resistor where the voltage is transferred across the
device to control the resulting current.
(http://amasci.com/amateur/trshort.html)
* invented in 1947 by Shockley, Bardeen, and Brattain at Bell Laboratories.

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Emitter Collector Emitter Collector

p n p n p n

Base Base

pnp transistor npn transistor

* Bipolar: both electrons and holes contribute to conduction

* Junction: device includes two p-n junctions (as opposed to a “point-contact”
transistor, the first transistor)
* Transistor: “transfer resistor”
When Bell Labs had an informal contest to name their new invention, one engineer pointed
out that it acts like a resistor, but a resistor where the voltage is transferred across the
device to control the resulting current.
(http://amasci.com/amateur/trshort.html)
* invented in 1947 by Shockley, Bardeen, and Brattain at Bell Laboratories.
* “A BJT is two diodes connected back-to-back.”

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Emitter Collector Emitter Collector

p n p n p n

Base Base

pnp transistor npn transistor

* Bipolar: both electrons and holes contribute to conduction

* Junction: device includes two p-n junctions (as opposed to a “point-contact”
transistor, the first transistor)
* Transistor: “transfer resistor”
When Bell Labs had an informal contest to name their new invention, one engineer pointed
out that it acts like a resistor, but a resistor where the voltage is transferred across the
device to control the resulting current.
(http://amasci.com/amateur/trshort.html)
* invented in 1947 by Shockley, Bardeen, and Brattain at Bell Laboratories.
* “A BJT is two diodes connected back-to-back.”
WRONG! Let us see why.

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Consider a pnp BJT in the following circuit:

E C
p n p
R1 1 k I1 I 2 R2 1 k
B

5V I3 10 V

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Consider a pnp BJT in the following circuit:

E C
p n p
R1 1 k I1 I 2 R2 1 k
B

5V I3 10 V

If the transistor is replaced with two diodes connected back-to-back, we get,

E C
R1 1 k I1 I 2 R2 1 k
D1 B D2

5V I3 10 V

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Consider a pnp BJT in the following circuit:

E C
p n p
R1 1 k I1 I 2 R2 1 k
B

5V I3 10 V

If the transistor is replaced with two diodes connected back-to-back, we get,

E C
R1 1 k I1 I 2 R2 1 k
D1 B D2

5V I3 10 V

Assuming Von = 0.7 V for D1, we get

5 V − 0.7 V
I1 = = 4.3 mA,
R1
I2 = 0 (since D2 is reverse biased), and
I3 ≈ I1 = 4.3 mA.
M. B. Patil, IIT Bombay
Bipolar Junction Transistors

Using a more accurate equivalent circuit for the BJT, we obtain,

α I1
E C E C
p n p
R1 1 k I1 I 2 R2 1 k R1 1 k I1 I2 R2 1 k
B B

5V I3 5V I3

10 V 10 V

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Using a more accurate equivalent circuit for the BJT, we obtain,

α I1
E C E C
p n p
R1 1 k I1 I 2 R2 1 k R1 1 k I1 I2 R2 1 k
B B

5V I3 5V I3

10 V 10 V

We now get,
5 V − 0.7 V
I1 = = 4.3 mA (as before),
R1

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Using a more accurate equivalent circuit for the BJT, we obtain,

α I1
E C E C
p n p
R1 1 k I1 I 2 R2 1 k R1 1 k I1 I2 R2 1 k
B B

5V I3 5V I3

10 V 10 V

We now get,
5 V − 0.7 V
I1 = = 4.3 mA (as before),
R1
I2 = αI1 ≈ 4.3 mA (since α ≈ 1 for a typical BJT), and

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Using a more accurate equivalent circuit for the BJT, we obtain,

α I1
E C E C
p n p
R1 1 k I1 I 2 R2 1 k R1 1 k I1 I2 R2 1 k
B B

5V I3 5V I3

10 V 10 V

We now get,
5 V − 0.7 V
I1 = = 4.3 mA (as before),
R1
I2 = αI1 ≈ 4.3 mA (since α ≈ 1 for a typical BJT), and
I3 = I1 − I2 = (1 − α) I1 ≈ 0 A.

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Using a more accurate equivalent circuit for the BJT, we obtain,

α I1
E C E C
p n p
R1 1 k I1 I 2 R2 1 k R1 1 k I1 I2 R2 1 k
B B

5V I3 5V I3

10 V 10 V

We now get,
5 V − 0.7 V
I1 = = 4.3 mA (as before),
R1
I2 = αI1 ≈ 4.3 mA (since α ≈ 1 for a typical BJT), and
I3 = I1 − I2 = (1 − α) I1 ≈ 0 A.
The values of I2 and I3 are dramatically different than the ones obtained earlier.

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

Using a more accurate equivalent circuit for the BJT, we obtain,

α I1
E C E C
p n p
R1 1 k I1 I 2 R2 1 k R1 1 k I1 I2 R2 1 k
B B

5V I3 5V I3

10 V 10 V

We now get,
5 V − 0.7 V
I1 = = 4.3 mA (as before),
R1
I2 = αI1 ≈ 4.3 mA (since α ≈ 1 for a typical BJT), and
I3 = I1 − I2 = (1 − α) I1 ≈ 0 A.
The values of I2 and I3 are dramatically different than the ones obtained earlier.

Conclusion: A BJT is NOT the same as two diodes connected back-to-back (although
it does have two p-n junctions).

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

What is wrong with the two-diode model of a BJT?

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

What is wrong with the two-diode model of a BJT?

* When we replace a BJT with two diodes, we assume that there is no interaction
between the two diodes, which may be expected if they are “far apart.”

Emitter Collector
p n p

Base
Emitter Collector

D1 Base D2

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

What is wrong with the two-diode model of a BJT?

* When we replace a BJT with two diodes, we assume that there is no interaction
between the two diodes, which may be expected if they are “far apart.”

Emitter Collector
p n p

Base
Emitter Collector

D1 Base D2

* However, in a BJT, exactly the opposite is true. For a higher performance, the
base region is made as short as possible (subject to certain constraints), and the
two diodes therefore cannot be treated as independent devices.

Emitter Collector
p n p

Base

M. B. Patil, IIT Bombay

Bipolar Junction Transistors

What is wrong with the two-diode model of a BJT?

* When we replace a BJT with two diodes, we assume that there is no interaction
between the two diodes, which may be expected if they are “far apart.”

Emitter Collector
p n p

Base
Emitter Collector

D1 Base D2

* However, in a BJT, exactly the opposite is true. For a higher performance, the
base region is made as short as possible (subject to certain constraints), and the
two diodes therefore cannot be treated as independent devices.

Emitter Collector
p n p

Base

* Later, we will look at the “Ebers-Moll model” of a BJT, which is a fairly

accurate representation of the transistor action.

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

* In the active mode of a BJT, the B-E junction is under forward bias, and the
B-C junction is under reverse bias.
- For a pnp transistor, VEB > 0 V , and VCB < 0 V .
- For an npn transistor, VBE > 0 V , and VBC < 0 V .

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

* In the active mode of a BJT, the B-E junction is under forward bias, and the
B-C junction is under reverse bias.
- For a pnp transistor, VEB > 0 V , and VCB < 0 V .
- For an npn transistor, VBE > 0 V , and VBC < 0 V .
* Since the B-E junction is under forward bias, the voltage (magnitude) is typically
0.6 to 0.75 V .

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

* In the active mode of a BJT, the B-E junction is under forward bias, and the
B-C junction is under reverse bias.
- For a pnp transistor, VEB > 0 V , and VCB < 0 V .
- For an npn transistor, VBE > 0 V , and VBC < 0 V .
* Since the B-E junction is under forward bias, the voltage (magnitude) is typically
0.6 to 0.75 V .
* The B-C voltage can be several Volts (or even hundreds of Volts), and is limited
by the breakdown voltage of the B-C junction.

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

* In the active mode of a BJT, the B-E junction is under forward bias, and the
B-C junction is under reverse bias.
- For a pnp transistor, VEB > 0 V , and VCB < 0 V .
- For an npn transistor, VBE > 0 V , and VBC < 0 V .
* Since the B-E junction is under forward bias, the voltage (magnitude) is typically
0.6 to 0.75 V .
* The B-C voltage can be several Volts (or even hundreds of Volts), and is limited
by the breakdown voltage of the B-C junction.
* The symbol for a BJT includes an arrow for the emitter terminal, its direction
indicating the current direction when the transistor is in active mode.

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

* In the active mode of a BJT, the B-E junction is under forward bias, and the
B-C junction is under reverse bias.
- For a pnp transistor, VEB > 0 V , and VCB < 0 V .
- For an npn transistor, VBE > 0 V , and VBC < 0 V .
* Since the B-E junction is under forward bias, the voltage (magnitude) is typically
0.6 to 0.75 V .
* The B-C voltage can be several Volts (or even hundreds of Volts), and is limited
by the breakdown voltage of the B-C junction.
* The symbol for a BJT includes an arrow for the emitter terminal, its direction
indicating the current direction when the transistor is in active mode.
* Analog circuits, including amplifiers, are generally designed to ensure that the
BJTs are operating in the active mode.

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

E α IE E α IE
C C
IE IC IE IC
IB IB
B B

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

E α IE E α IE
C C
IE IC IE IC
IB IB
B B

* In the active mode, IC = α IE , α ≈ 1 (slightly less than 1).

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

E α IE E α IE
C C
IE IC IE IC
IB IB
B B

* In the active mode, IC = α IE , α ≈ 1 (slightly less than 1).

* IB = IE − IC = IE (1 − α) .

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

E α IE E α IE
C C
IE IC IE IC
IB IB
B B

* In the active mode, IC = α IE , α ≈ 1 (slightly less than 1).

* IB = IE − IC = IE (1 − α) .
* The ratio IC /IB is defined as the current gain β of the transistor.
IC α
β= = .
IB 1−α

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

E α IE E α IE
C C
IE IC IE IC
IB IB
B B

* In the active mode, IC = α IE , α ≈ 1 (slightly less than 1).

* IB = IE − IC = IE (1 − α) .
* The ratio IC /IB is defined as the current gain β of the transistor.
IC α
β= = .
IB 1−α
* β is a function of IC and temperature. However, we will generally treat it as a
constant, a useful approximation to simplify things and still get a good insight.

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

E α IE E α IE
C C
IE IC IE IC
IB IB
B B

IC α
β= =
IB 1−α

α β
0.9 9
0.95 19
0.99 99
0.995 199

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

E α IE E α IE
C C
IE IC IE IC
IB IB
B B

IC α
β= =
IB 1−α
* β is a sensitive function of α.
α β
0.9 9
0.95 19
0.99 99
0.995 199

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

E α IE E α IE
C C
IE IC IE IC
IB IB
B B

IC α
β= =
IB 1−α
* β is a sensitive function of α.
α β * Transistors are generally designed to get a high value of β
(typically 100 to 250, but can be as high as 2000 for
0.9 9
“super-β” transistors).
0.95 19
0.99 99
0.995 199

M. B. Patil, IIT Bombay

BJT in active mode

E p n p C E C E n p n C E C
IE IC IE IC IE IC IE IC
IB IB IB
IB
B B B B

E α IE E α IE
C C
IE IC IE IC
IB IB
B B

IC α
β= =
IB 1−α
* β is a sensitive function of α.
α β * Transistors are generally designed to get a high value of β
(typically 100 to 250, but can be as high as 2000 for
0.9 9
“super-β” transistors).
0.95 19
* A large β ⇒ IB  IC or IE when the transistor is in the
0.99 99 active mode.
0.995 199

M. B. Patil, IIT Bombay

A simple BJT circuit

1k RC
VCC
C
100 k B
β = 100 10 V
RB
2V E
VBB
A simple BJT circuit

10 V VCC

1k RC 1k RC
VCC
C n
100 k B 100 k p
2V
β = 100 10 V β = 100
RB VBB RB
2V E n
VBB
A simple BJT circuit

10 V VCC

10 V VCC 1k RC

IC
1k RC 1k RC
VCC α IE
C n
100 k B 100 k p 100 k IB
2V 2V
β = 100 10 V β = 100
RB VBB RB VBB RB
2V E n
VBB IE

M. B. Patil, IIT Bombay

A simple BJT circuit

10 V VCC

10 V VCC 1k RC

IC
1k RC 1k RC
VCC α IE
C n
100 k B 100 k p 100 k IB
2V 2V
β = 100 10 V β = 100
RB VBB RB VBB RB
2V E n
VBB IE

Assume the BJT to be in the active mode ⇒ VBE = 0.7 V and IC = αIE = β IB .

M. B. Patil, IIT Bombay

A simple BJT circuit

10 V VCC

10 V VCC 1k RC

IC
1k RC 1k RC
VCC α IE
C n
100 k B 100 k p 100 k IB
2V 2V
β = 100 10 V β = 100
RB VBB RB VBB RB
2V E n
VBB IE

Assume the BJT to be in the active mode ⇒ VBE = 0.7 V and IC = αIE = β IB .
VBB − VBE 2 V − 0.7 V
IB = = = 13 µA.
RB 100 k

M. B. Patil, IIT Bombay

A simple BJT circuit

10 V VCC

10 V VCC 1k RC

IC
1k RC 1k RC
VCC α IE
C n
100 k B 100 k p 100 k IB
2V 2V
β = 100 10 V β = 100
RB VBB RB VBB RB
2V E n
VBB IE

Assume the BJT to be in the active mode ⇒ VBE = 0.7 V and IC = αIE = β IB .
VBB − VBE 2 V − 0.7 V
IB = = = 13 µA.
RB 100 k
IC = β × IB = 100 × 13 µA = 1.3 mA.

M. B. Patil, IIT Bombay

A simple BJT circuit

10 V VCC

10 V VCC 1k RC

IC
1k RC 1k RC
VCC α IE
C n
100 k B 100 k p 100 k IB
2V 2V
β = 100 10 V β = 100
RB VBB RB VBB RB
2V E n
VBB IE

Assume the BJT to be in the active mode ⇒ VBE = 0.7 V and IC = αIE = β IB .
VBB − VBE 2 V − 0.7 V
IB = = = 13 µA.
RB 100 k
IC = β × IB = 100 × 13 µA = 1.3 mA.
VC = VCC − IC RC = 10 V − 1.3 mA × 1 k = 8.7 V .

M. B. Patil, IIT Bombay

A simple BJT circuit

10 V VCC

10 V VCC 1k RC

IC
1k RC 1k RC
VCC α IE
C n
100 k B 100 k p 100 k IB
2V 2V
β = 100 10 V β = 100
RB VBB RB VBB RB
2V E n
VBB IE

Assume the BJT to be in the active mode ⇒ VBE = 0.7 V and IC = αIE = β IB .
VBB − VBE 2 V − 0.7 V
IB = = = 13 µA.
RB 100 k
IC = β × IB = 100 × 13 µA = 1.3 mA.
VC = VCC − IC RC = 10 V − 1.3 mA × 1 k = 8.7 V .
Let us check whether our assumption of active mode is correct. We need to check
whether the B-C junction is under reverse bias.

M. B. Patil, IIT Bombay

A simple BJT circuit

10 V VCC

10 V VCC 1k RC

IC
1k RC 1k RC
VCC α IE
C n
100 k B 100 k p 100 k IB
2V 2V
β = 100 10 V β = 100
RB VBB RB VBB RB
2V E n
VBB IE

Assume the BJT to be in the active mode ⇒ VBE = 0.7 V and IC = αIE = β IB .
VBB − VBE 2 V − 0.7 V
IB = = = 13 µA.
RB 100 k
IC = β × IB = 100 × 13 µA = 1.3 mA.
VC = VCC − IC RC = 10 V − 1.3 mA × 1 k = 8.7 V .
Let us check whether our assumption of active mode is correct. We need to check
whether the B-C junction is under reverse bias.
VBC = VB − VC = 0.7 V − 8.7 V = −8.0 V ,
i.e., the B-C junction is indeed under reverse bias.
M. B. Patil, IIT Bombay
A simple BJT circuit (continued)

10 V VCC

1k RC
IC n
10 k p
2V
β = 100
VBB RB I B
n

What happens if RB is changed from 100 k to 10 k?

M. B. Patil, IIT Bombay

A simple BJT circuit (continued)

10 V VCC

1k RC
IC n
10 k p
2V
β = 100
VBB RB I B
n

What happens if RB is changed from 100 k to 10 k?

Assuming the BJT to be in the active mode again, we have VBE ≈ 0.7 V , and
IC = β IB .

M. B. Patil, IIT Bombay

A simple BJT circuit (continued)

10 V VCC

1k RC
IC n
10 k p
2V
β = 100
VBB RB I B
n

What happens if RB is changed from 100 k to 10 k?

Assuming the BJT to be in the active mode again, we have VBE ≈ 0.7 V , and
IC = β IB .
VBB − VBE 2 V − 0.7 V
IB = = = 130 µA.
RB 10 k
IC = β × IB = 100 × 130 µA = 13 mA.
VC = VCC − IC RC = 10 V − 13 mA × 1 k = −3 V .

M. B. Patil, IIT Bombay

A simple BJT circuit (continued)

10 V VCC

1k RC
IC n
10 k p
2V
β = 100
VBB RB I B
n

What happens if RB is changed from 100 k to 10 k?

Assuming the BJT to be in the active mode again, we have VBE ≈ 0.7 V , and
IC = β IB .
VBB − VBE 2 V − 0.7 V
IB = = = 130 µA.
RB 10 k
IC = β × IB = 100 × 130 µA = 13 mA.
VC = VCC − IC RC = 10 V − 13 mA × 1 k = −3 V .
VBC = VB − VC = 0.7 V − (−3) V = 3.7 V ,

M. B. Patil, IIT Bombay

A simple BJT circuit (continued)

10 V VCC

1k RC
IC n
10 k p
2V
β = 100
VBB RB I B
n

What happens if RB is changed from 100 k to 10 k?

Assuming the BJT to be in the active mode again, we have VBE ≈ 0.7 V , and
IC = β IB .
VBB − VBE 2 V − 0.7 V
IB = = = 130 µA.
RB 10 k
IC = β × IB = 100 × 130 µA = 13 mA.
VC = VCC − IC RC = 10 V − 13 mA × 1 k = −3 V .
VBC = VB − VC = 0.7 V − (−3) V = 3.7 V ,
VBC is not only positive, it is huge!
The BJT cannot be in the active mode, and we need to take another look at the
circuit.
M. B. Patil, IIT Bombay
Ebers-Moll model for a pnp transistor

Active mode ("forward" active mode): B−E in f. b., B−C in r. b.

IE IC E C
E p n p C E C
IE IC IE IC
αF IE
IB IB IB
B B
B
Ebers-Moll model for a pnp transistor

Active mode ("forward" active mode): B−E in f. b., B−C in r. b.

IE IC E C
E p n p C E C
IE IC IE IC
αF IE
IB IB IB
B B
B

Reverse active mode: B−E in r. b., B−C in f. b.

αR (−IC ) (−IC )
IE IC E C
E p n p C E C
IE IC IE IC
IB IB IB
B B
B

M. B. Patil, IIT Bombay

Ebers-Moll model for a pnp transistor

Active mode ("forward" active mode): B−E in f. b., B−C in r. b.

IE IC E C
E p n p C E C
IE IC IE IC
αF IE
IB IB IB
B B
B

Reverse active mode: B−E in r. b., B−C in f. b.

αR (−IC ) (−IC )
IE IC E C
E p n p C E C
IE IC IE IC
IB IB IB
B B
B

In the reverse active mode, emitter ↔ collector. (However, we continue to refer to the
terminals with their original names.)

M. B. Patil, IIT Bombay

Ebers-Moll model for a pnp transistor

Active mode ("forward" active mode): B−E in f. b., B−C in r. b.

IE IC E C
E p n p C E C
IE IC IE IC
αF IE
IB IB IB
B B
B

Reverse active mode: B−E in r. b., B−C in f. b.

αR (−IC ) (−IC )
IE IC E C
E p n p C E C
IE IC IE IC
IB IB IB
B B
B

In the reverse active mode, emitter ↔ collector. (However, we continue to refer to the
terminals with their original names.)
The two α’s, αF (“forward” α) and αR (“reverse” α) are generally quite different.

M. B. Patil, IIT Bombay

Ebers-Moll model for a pnp transistor

Active mode ("forward" active mode): B−E in f. b., B−C in r. b.

IE IC E C
E p n p C E C
IE IC IE IC
αF IE
IB IB IB
B B
B

Reverse active mode: B−E in r. b., B−C in f. b.

αR (−IC ) (−IC )
IE IC E C
E p n p C E C
IE IC IE IC
IB IB IB
B B
B

In the reverse active mode, emitter ↔ collector. (However, we continue to refer to the
terminals with their original names.)
The two α’s, αF (“forward” α) and αR (“reverse” α) are generally quite different.
Typically, αF > 0.98, and αR is in the range from 0.02 to 0.5.

M. B. Patil, IIT Bombay

Ebers-Moll model for a pnp transistor

Active mode ("forward" active mode): B−E in f. b., B−C in r. b.

IE IC E C
E p n p C E C
IE IC IE IC
αF IE
IB IB IB
B B
B

Reverse active mode: B−E in r. b., B−C in f. b.

αR (−IC ) (−IC )
IE IC E C
E p n p C E C
IE IC IE IC
IB IB IB
B B
B

In the reverse active mode, emitter ↔ collector. (However, we continue to refer to the
terminals with their original names.)
The two α’s, αF (“forward” α) and αR (“reverse” α) are generally quite different.
Typically, αF > 0.98, and αR is in the range from 0.02 to 0.5.
The corresponding current gains (βF and βR ) differ significantly, since β = α/(1 − α).

M. B. Patil, IIT Bombay

Ebers-Moll model for a pnp transistor

Active mode ("forward" active mode): B−E in f. b., B−C in r. b.

IE IC E C
E p n p C E C
IE IC IE IC
αF IE
IB IB IB
B B
B

Reverse active mode: B−E in r. b., B−C in f. b.

αR (−IC ) (−IC )
IE IC E C
E p n p C E C
IE IC IE IC
IB IB IB
B B
B

In the reverse active mode, emitter ↔ collector. (However, we continue to refer to the
terminals with their original names.)
The two α’s, αF (“forward” α) and αR (“reverse” α) are generally quite different.
Typically, αF > 0.98, and αR is in the range from 0.02 to 0.5.
The corresponding current gains (βF and βR ) differ significantly, since β = α/(1 − α).
In amplifiers, the BJT is biased in the forward active mode (simply called the “active
mode”) in order to make use of the higher value of β in that mode.

M. B. Patil, IIT Bombay

Ebers-Moll model for a pnp transistor

The Ebers-Moll model combines the forward and reverse operations of a BJT in a single
comprehensive model.

IE IC αF I′E
E p n p C I′E

IB E D1 C
B
p IE D2 IC p
E C
IE IC I′C
αR I′C IB
IB
B n
B

M. B. Patil, IIT Bombay

Ebers-Moll model for a pnp transistor

The Ebers-Moll model combines the forward and reverse operations of a BJT in a single
comprehensive model.

IE IC αF I′E
E p n p C I′E

IB E D1 C
B
p IE D2 IC p
E C
IE IC I′C
αR I′C IB
IB
B n
B

The currents IE0 and IC0 are given by the Shockley diode equation:
       
VEB VCB
IE0 = IES exp − 1 , IC0 = ICS exp −1 .
VT VT

M. B. Patil, IIT Bombay

Ebers-Moll model for a pnp transistor

The Ebers-Moll model combines the forward and reverse operations of a BJT in a single
comprehensive model.

IE IC αF I′E
E p n p C I′E

IB E D1 C
B
p IE D2 IC p
E C
IE IC I′C
αR I′C IB
IB
B n
B

The currents IE0 and IC0 are given by the Shockley diode equation:
       
VEB VCB
IE0 = IES exp − 1 , IC0 = ICS exp −1 .
VT VT

Mode B-E B-C

Forward active forward reverse IE0  IC0
Reverse active reverse forward IC0  IE0
Saturation forward forward IE0 and IC0 are comparable.
Cut-off reverse reverse IE0 and IC0 are negliglbe.

M. B. Patil, IIT Bombay

 Ebers-Moll model
pnp transistor
IE IC αF I′E
E p n p C I′E

I′E = IES [exp(VEB /VT ) − 1]

IB E D1 C
B
p IE D2 IC p
I′C = ICS [exp(VCB /VT ) − 1]
E C
IE IC I′C
αR I′C IB
IB
B n
B

npn transistor
IE IC αF I′E
E n p n C I′E

I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C
B D2 IC
n IE n
E C I′C = ICS [exp(VBC /VT ) − 1]
IE IC
αR I′C IB I′C
IB B p
B

M. B. Patil, IIT Bombay

 Ebers-Moll model
pnp transistor
IE IC αF I′E
E p n p C I′E

I′E = IES [exp(VEB /VT ) − 1]

IB E D1 C
B
p IE D2 IC p
I′C = ICS [exp(VCB /VT ) − 1]
E C
IE IC I′C
αR I′C IB
IB
B n
B

npn transistor
IE IC αF I′E
E n p n C I′E

I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C
B D2 IC
n IE n
E C I′C = ICS [exp(VBC /VT ) − 1]
IE IC
αR I′C IB I′C
IB B p
B

For an npn transistor, the same model holds with current directions and voltage
polarities suitably changed.

M. B. Patil, IIT Bombay

IC -VCE characteristics

IE IC αF I′E
E n p n C I′E I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C I′C = ICS [exp(VBC /VT ) − 1]

B D2 IC
n IE n
E C αF = 0.99, ISE = 1 × 10−14 A
IE IC
αR I′C IB I′C
αR = 0.50, ISC = 2 × 10−14 A
IB B p
B

A BJT is a three-terminal device, and its I -V chatacteristics can therefore be

represented in several different ways. The IC versus VCE characteristics are very useful
in amplifiers.

M. B. Patil, IIT Bombay

IC -VCE characteristics

IE IC αF I′E
E n p n C I′E I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C I′C = ICS [exp(VBC /VT ) − 1]

B D2 IC
n IE n
E C αF = 0.99, ISE = 1 × 10−14 A
IE IC
αR I′C IB I′C
αR = 0.50, ISC = 2 × 10−14 A
IB B p
B

A BJT is a three-terminal device, and its I -V chatacteristics can therefore be

represented in several different ways. The IC versus VCE characteristics are very useful
in amplifiers.
To start with, we consider a single point, IB = 10 µA, VCE = 5 V .

M. B. Patil, IIT Bombay

IC -VCE characteristics

IE IC αF I′E
E n p n C I′E I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C I′C = ICS [exp(VBC /VT ) − 1]

B D2 IC
n IE n
E C αF = 0.99, ISE = 1 × 10−14 A
IE IC
αR I′C IB I′C
αR = 0.50, ISC = 2 × 10−14 A
IB B p
B

A BJT is a three-terminal device, and its I -V chatacteristics can therefore be

represented in several different ways. The IC versus VCE characteristics are very useful
in amplifiers.
To start with, we consider a single point, IB = 10 µA, VCE = 5 V .
There are several ways to assign VBE and VCB so that they satisfy the constraint:
VCB + VBE = (VC − VB ) + (VB − VE ) = VCE = 5 V .

M. B. Patil, IIT Bombay

IC -VCE characteristics

IE IC αF I′E
E n p n C I′E I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C I′C = ICS [exp(VBC /VT ) − 1]

B D2 IC
n IE n
E C αF = 0.99, ISE = 1 × 10−14 A
IE IC
αR I′C IB I′C
αR = 0.50, ISC = 2 × 10−14 A
IB B p
B

A BJT is a three-terminal device, and its I -V chatacteristics can therefore be

represented in several different ways. The IC versus VCE characteristics are very useful
in amplifiers.
To start with, we consider a single point, IB = 10 µA, VCE = 5 V .
There are several ways to assign VBE and VCB so that they satisfy the constraint:
VCB + VBE = (VC − VB ) + (VB − VE ) = VCE = 5 V .
Let us consider some of these possibilities.

M. B. Patil, IIT Bombay

IC -VCE characteristics

IE IC αF I′E
E n p n C I′E I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C I′C = ICS [exp(VBC /VT ) − 1]

B IE D2 IC
n n
E C αF = 0.99, ISE = 1 × 10−14 A
IE IC
αR I′C IB I′C
αR = 0.50, ISC = 2 × 10−14 A
IB B p
B

Constraints: IB = 10 µA, VCE = 5 V .

M. B. Patil, IIT Bombay

IC -VCE characteristics

IE IC αF I′E
E n p n C I′E I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C I′C = ICS [exp(VBC /VT ) − 1]

B IE D2 IC
n n
E C αF = 0.99, ISE = 1 × 10−14 A
IE IC
αR I′C IB I′C
αR = 0.50, ISC = 2 × 10−14 A
IB B p
B

Constraints: IB = 10 µA, VCE = 5 V .

5V
E C
n IE IC n
IB
1V B 6V
p

M. B. Patil, IIT Bombay

IC -VCE characteristics

IE IC αF I′E
E n p n C I′E I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C I′C = ICS [exp(VBC /VT ) − 1]

B IE D2 IC
n n
E C αF = 0.99, ISE = 1 × 10−14 A
IE IC
αR I′C IB I′C
αR = 0.50, ISC = 2 × 10−14 A
IB B p
B

Constraints: IB = 10 µA, VCE = 5 V .

5V
D1 and D2 are both off, and we cannot satisfy the
E C condition, IB = 10 µA, since all currents are much
n IE IC n smaller than 10 µA.
IB
1V B 6V
p

M. B. Patil, IIT Bombay

IC -VCE characteristics

IE IC αF I′E
E n p n C I′E I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C I′C = ICS [exp(VBC /VT ) − 1]

B IE D2 IC
n n
E C αF = 0.99, ISE = 1 × 10−14 A
IE IC
αR I′C IB I′C
αR = 0.50, ISC = 2 × 10−14 A
IB B p
B

Constraints: IB = 10 µA, VCE = 5 V .

5V
D1 and D2 are both off, and we cannot satisfy the
E C condition, IB = 10 µA, since all currents are much
n IE IC n smaller than 10 µA.
IB
1V B 6V ⇒ This possibility (and similarly others with both
p junctions reverse biased) is ruled out.

M. B. Patil, IIT Bombay

IC -VCE characteristics

IE IC αF I′E
E n p n C I′E I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C I′C = ICS [exp(VBC /VT ) − 1]

B D2 IC
n IE n
E C αF = 0.99, ISE = 1 × 10−14 A
IE IC
αR I′C IB I′C
αR = 0.50, ISC = 2 × 10−14 A
IB B p
B

Constraints: IB = 10 µA, VCE = 5 V .

M. B. Patil, IIT Bombay

IC -VCE characteristics

IE IC αF I′E
E n p n C I′E I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C I′C = ICS [exp(VBC /VT ) − 1]

B D2 IC
n IE n
E C αF = 0.99, ISE = 1 × 10−14 A
IE IC
αR I′C IB I′C
αR = 0.50, ISC = 2 × 10−14 A
IB B p
B

Constraints: IB = 10 µA, VCE = 5 V .

5V
E C
n IE IC n
IB
6V B 1V
p

M. B. Patil, IIT Bombay

IC -VCE characteristics

IE IC αF I′E
E n p n C I′E I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C I′C = ICS [exp(VBC /VT ) − 1]

B D2 IC
n IE n
E C αF = 0.99, ISE = 1 × 10−14 A
IE IC
αR I′C IB I′C
αR = 0.50, ISC = 2 × 10−14 A
IB B p
B

Constraints: IB = 10 µA, VCE = 5 V .

5V
E C D1 and D2 are both conducting; however, the forward
n IE IC n bias for the B-E junction is impossibly large.
IB
6V B 1V
p

M. B. Patil, IIT Bombay

IC -VCE characteristics

IE IC αF I′E
E n p n C I′E I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C I′C = ICS [exp(VBC /VT ) − 1]

B D2 IC
n IE n
E C αF = 0.99, ISE = 1 × 10−14 A
IE IC
αR I′C IB I′C
αR = 0.50, ISC = 2 × 10−14 A
IB B p
B

Constraints: IB = 10 µA, VCE = 5 V .

5V
E C D1 and D2 are both conducting; however, the forward
n IE IC n bias for the B-E junction is impossibly large.
IB
6V B 1V ⇒ This possibility is also ruled out.
p

M. B. Patil, IIT Bombay

IC -VCE characteristics

IE IC αF I′E
E n p n C I′E I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C I′C = ICS [exp(VBC /VT ) − 1]

B IE D2 IC
n n
E C αF = 0.99, ISE = 1 × 10−14 A
IE IC
αR I′C IB I′C
αR = 0.50, ISC = 2 × 10−14 A
IB B p
B

Constraints: IB = 10 µA, VCE = 5 V .

M. B. Patil, IIT Bombay

IC -VCE characteristics

IE IC αF I′E
E n p n C I′E I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C I′C = ICS [exp(VBC /VT ) − 1]

B IE D2 IC
n n
E C αF = 0.99, ISE = 1 × 10−14 A
IE IC
αR I′C IB I′C
αR = 0.50, ISC = 2 × 10−14 A
IB B p
B

Constraints: IB = 10 µA, VCE = 5 V .

5V
E C
n IE IC n
IB
0.7 V B 4.3 V
p

M. B. Patil, IIT Bombay

IC -VCE characteristics

IE IC αF I′E
E n p n C I′E I′E = IES [exp(VBE /VT ) − 1]

IB E D1 C I′C = ICS [exp(VBC /VT ) − 1]

B IE D2 IC
n n
E C αF = 0.99, ISE = 1 × 10−14 A
IE IC
αR I′C IB I′C
αR = 0.50, ISC = 2 × 10−14 A
IB B p
B

Constraints: IB = 10 µA, VCE = 5 V .

5V
D1 is on, D2 is off. This is a realistic possibility. Since
E C the B-C junction is under reverse bias, IC0 and αR IC0 are
n IE IC n much smaller than IE0 , and therefore the lower branches
IB
0.7 V B 4.3 V in the Ebers-Moll model can be dropped (see next
p slide).

M. B. Patil, IIT Bombay

IC -VCE characteristics

5V
E C
n IE IC n
IB
0.7 V B 4.3 V
p
αF I′E
I′E
E C
n IE IC n
D1 IB
B p

(The actual values for VBE and VCB obtained by solving the Ebers-Moll equations are
VBE = 0.656 V and VCB = 4.344 V .)
The BJT is in the active mode, and therefore
αF
IC = β IB = IB = 99 × 10 µA = 0.99 mA.
1 − αF
IC -VCE characteristics

5V
E C
n IE IC n 1
IB
0.7 V B 4.3 V

IC (mA)
p
αF I′E
I′E
E C
n IE IC n
D1 IB
B p 0
0 1 2 3 4 5
VCE (V)

(The actual values for VBE and VCB obtained by solving the Ebers-Moll equations are
VBE = 0.656 V and VCB = 4.344 V .)
The BJT is in the active mode, and therefore
αF
IC = β IB = IB = 99 × 10 µA = 0.99 mA.
1 − αF
IC -VCE characteristics

5V
E C
n IE IC n 1
IB
0.7 V B 4.3 V

IC (mA)
p
αF I′E
I′E
E C
n IE IC n
D1 IB
B p 0
0 1 2 3 4 5
VCE (V)

(The actual values for VBE and VCB obtained by solving the Ebers-Moll equations are
VBE = 0.656 V and VCB = 4.344 V .)
The BJT is in the active mode, and therefore
αF
IC = β IB = IB = 99 × 10 µA = 0.99 mA.
1 − αF
If VCE is reduced to, say, 4 V , and IB kept at 10 µA, our previous argument holds, and
once again, we find that IC = β IB = 0.99 mA.
IC -VCE characteristics

5V
E C
n IE IC n 1
IB
0.7 V B 4.3 V

IC (mA)
p
αF I′E
I′E
E C
n IE IC n
D1 IB
B p 0
0 1 2 3 4 5
VCE (V)

(The actual values for VBE and VCB obtained by solving the Ebers-Moll equations are
VBE = 0.656 V and VCB = 4.344 V .)
The BJT is in the active mode, and therefore
αF
IC = β IB = IB = 99 × 10 µA = 0.99 mA.
1 − αF
If VCE is reduced to, say, 4 V , and IB kept at 10 µA, our previous argument holds, and
once again, we find that IC = β IB = 0.99 mA.
Thus, the plot of IC versus VCE is simply a horizontal line.
IC -VCE characteristics

5V
E C
n IE IC n 1 1
IB
0.7 V B 4.3 V

IC (mA)
IC (mA)
p
αF I′E
I′E
E C
n IE IC n
D1 IB
B p 0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE (V) VCE (V)

(The actual values for VBE and VCB obtained by solving the Ebers-Moll equations are
VBE = 0.656 V and VCB = 4.344 V .)
The BJT is in the active mode, and therefore
αF
IC = β IB = IB = 99 × 10 µA = 0.99 mA.
1 − αF
If VCE is reduced to, say, 4 V , and IB kept at 10 µA, our previous argument holds, and
once again, we find that IC = β IB = 0.99 mA.
Thus, the plot of IC versus VCE is simply a horizontal line.

M. B. Patil, IIT Bombay

IC -VCE characteristics

5V
E C
n IE IC n 1 1
IB
0.7 V B 4.3 V

IC (mA)
IC (mA)
p
αF I′E
I′E
E C
n IE IC n
D1 IB
B p 0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE (V) VCE (V)

(The actual values for VBE and VCB obtained by solving the Ebers-Moll equations are
VBE = 0.656 V and VCB = 4.344 V .)
The BJT is in the active mode, and therefore
αF
IC = β IB = IB = 99 × 10 µA = 0.99 mA.
1 − αF
If VCE is reduced to, say, 4 V , and IB kept at 10 µA, our previous argument holds, and
once again, we find that IC = β IB = 0.99 mA.
Thus, the plot of IC versus VCE is simply a horizontal line.
However, as VCE → 0 V , things change (see next slide).

M. B. Patil, IIT Bombay

IC -VCE characteristics

0.7 V
E C
n IE IC n
IB
0.7 V B 0V
p

When VCE ≈ 0.7 V (and IB kept at 10 µA), the B-C drop is about 0 V .
IC -VCE characteristics

0.7 V
E C
n IE IC n
IB
0.7 V B 0V
p

0.3 V
E C
n IE IC n
IB
0.7 V B 0.4 V
p

When VCE ≈ 0.7 V (and IB kept at 10 µA), the B-C drop is about 0 V .
As VCE is reduced further, the B-C junction gets forward biased. For example, with
VCE = 0.3 V , we may have a voltage distribution shown in the figure.
(The numbers are only representative; the actual VBE and VBC values can be obtained
by solving the E-M equations.)
IC -VCE characteristics

0.7 V
E C αF I′E
n IE IC n I′E
IB
0.7 V B 0V E D1 C
p D2
n IE IC n
0.3 V
E C I′C
n IE IC n αR I′C IB
IB B p
0.7 V B 0.4 V
p

When VCE ≈ 0.7 V (and IB kept at 10 µA), the B-C drop is about 0 V .
As VCE is reduced further, the B-C junction gets forward biased. For example, with
VCE = 0.3 V , we may have a voltage distribution shown in the figure.
(The numbers are only representative; the actual VBE and VBC values can be obtained
by solving the E-M equations.)
Now, the component IC0 in the E-M model becomes significant, IC = αF IE0 − IC0
reduces, and IC becomes smaller than βIB .
IC -VCE characteristics

saturation

0.7 V linear
E C αF I′E
n IE IC n I′E
1
IB
0.7 V B 0V E D1 C

IC (mA)
p D2
n IE IC n
0.3 V
E C I′C
n IE IC n αR I′C IB
IB B p
0.7 V B 0.4 V
p 0
0 1 2 3 4 5
VCE (V)

When VCE ≈ 0.7 V (and IB kept at 10 µA), the B-C drop is about 0 V .
As VCE is reduced further, the B-C junction gets forward biased. For example, with
VCE = 0.3 V , we may have a voltage distribution shown in the figure.
(The numbers are only representative; the actual VBE and VBC values can be obtained
by solving the E-M equations.)
Now, the component IC0 in the E-M model becomes significant, IC = αF IE0 − IC0
reduces, and IC becomes smaller than βIB .
The region where IC < βIB is called the “saturation region.”

M. B. Patil, IIT Bombay

IC -VCE characteristics

saturation

linear

2
IB = 20 µA
IC (mA)

1
IB = 10 µA

0
0 1 2 3 4 5
VCE (V)

If IB is doubled (from 10 µA to 20 µA), IC = βIB changes by a factor of 2 in the linear

region. Apart from that, there is no qualitative change in the IC − VCE plot.
IC -VCE characteristics

saturation

linear

2
IB = 20 µA
IC (mA)

1
IB = 10 µA

0
0 1 2 3 4 5
VCE (V)

If IB is doubled (from 10 µA to 20 µA), IC = βIB changes by a factor of 2 in the linear

region. Apart from that, there is no qualitative change in the IC − VCE plot.
Clearly, the IC − VCE behaviour of a BJT is not represented by a single curve but by a
family of curves, known as the “IC − VCE characteristics.”
IC -VCE characteristics

saturation saturation

linear linear
5
50 µA
2 4
IB = 20 µA 40 µA
IC (mA)

IC (mA)
3
30 µA
1 2
IB = 10 µA 20 µA
1
IB = 10 µA
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE (V) VCE (V)

If IB is doubled (from 10 µA to 20 µA), IC = βIB changes by a factor of 2 in the linear

region. Apart from that, there is no qualitative change in the IC − VCE plot.
Clearly, the IC − VCE behaviour of a BJT is not represented by a single curve but by a
family of curves, known as the “IC − VCE characteristics.”

M. B. Patil, IIT Bombay

IC -VCE characteristics

saturation saturation

linear linear
5
50 µA
2 4
IB = 20 µA 40 µA
IC (mA)

IC (mA)
3
30 µA
1 2
IB = 10 µA 20 µA
1
IB = 10 µA
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE (V) VCE (V)

If IB is doubled (from 10 µA to 20 µA), IC = βIB changes by a factor of 2 in the linear

region. Apart from that, there is no qualitative change in the IC − VCE plot.
Clearly, the IC − VCE behaviour of a BJT is not represented by a single curve but by a
family of curves, known as the “IC − VCE characteristics.”
The IE − VCB and IC − VBE characteristics of a BJT are also useful in understanding
BJT circuits.

M. B. Patil, IIT Bombay

A simple BJT circuit (revisited)

10 V VCC

1k RC
IC n
p
2V
β = 100
VBB RB I B
n
IE

We are now in a position to explain what happens when RB is decreased from 100 k
to 10 k in the above circuit.
A simple BJT circuit (revisited)

saturation

linear
15
10 V VCC
130 µA (RB = 10 k)
1k RC 10

IC (mA)
IC n
p
2V 5
β = 100
VBB RB I B
n 13 µA (RB = 100 k)
IE
0
0 2 4 6 8 10
VCE (V)

We are now in a position to explain what happens when RB is decreased from 100 k
to 10 k in the above circuit.
VBB − 0.7 V
Let us plot IC − VCE curves for IB ≈ for the two values of RB .
RB
A simple BJT circuit (revisited)

saturation

linear
15
10 V VCC
130 µA (RB = 10 k)
1k RC 10

IC (mA)
IC n load line
p
2V 5
β = 100
VBB RB I B
n 13 µA (RB = 100 k)
IE
0
0 2 4 6 8 10
VCE (V)

We are now in a position to explain what happens when RB is decreased from 100 k
to 10 k in the above circuit.
VBB − 0.7 V
Let us plot IC − VCE curves for IB ≈ for the two values of RB .
RB
In addition to the BJT IC − VCE curve, the circuit variables must also satisfy the
constraint, VCC = VCE + IC RC , a straight line in the IC − VCE plane.

M. B. Patil, IIT Bombay

A simple BJT circuit (revisited)

saturation

linear
15
10 V VCC
130 µA (RB = 10 k)
1k RC 10

IC (mA)
IC n load line
p
2V 5
β = 100
VBB RB I B
n 13 µA (RB = 100 k)
IE
0
0 2 4 6 8 10
VCE (V)

We are now in a position to explain what happens when RB is decreased from 100 k
to 10 k in the above circuit.
VBB − 0.7 V
Let us plot IC − VCE curves for IB ≈ for the two values of RB .
RB
In addition to the BJT IC − VCE curve, the circuit variables must also satisfy the
constraint, VCC = VCE + IC RC , a straight line in the IC − VCE plane.
The intersection of the load line and the BJT characteristics gives the solution for the
circuit. For RB = 10 k, note that the BJT operates in the saturation region, leading
to VCE ≈ 0.2 V , and IC = 9.8 mA.
M. B. Patil, IIT Bombay