HITFETBTS 941

Smart Lowside Power Switch

Features Product Summary
• Logic Level Input Drain source voltage VDS 60 V
• Input Protection (ESD) On-state resistance R DS(on) 28 mΩ
• Thermal Shutdown Current limit I D(lim) 6 A
• Overload protection Nominal load current I D(ISO) 12 A
• Short circuit protection Clamping energy EAS 4000 mJ
• Overvoltage protection
• Current limitation

• Maximum current adjustable with external resistor

• Current sense
• Status feedback with external input resistor
• Analog driving possible

Application
• All kinds of resistive, inductive and capacitive loads in switching or
linear applications
• µC compatible power switch for 12 V and 24 V DC applications
• Replaces electromechanical relays and discrete circuits

General Description
N channel vertical power FET in Smart SIPMOS  chip on chip tech-
nology. Fully protected by embedded protected functions.

V bb

LOAD M
2

NC

Drain
3
Overvoltage
dv/dt Current
1 protection
IN limitation limitation

CC
4

Over-
Overload Short circuit
circuit
ESD temperature Short
protection protection
protection
R protection
CC
Source 5


HITFET

Semiconductor Group Page 1 02.12.1998

 BTS 941

Maximum Ratings at Tj = 25 °C unless otherwise specified

Parameter Symbol Value Unit
Drain source voltage VDS 60 V
Drain source voltage for short circuit protection VDS(SC)
RCC = 0 Ω 15
without RCC 50
Continuous input current 1) I IN mA
-0.2V ≤ V IN ≤ 10V no limit
VIN < -0.2V or VIN > 10V | IIN | ≤ 2
Operating temperature Tj - 40 ... +150 °C
Storage temperature T stg - 55 ... +150
Power dissipation Ptot 149 W
T C = 25 °C
Unclamped single pulse inductive energy EAS 4000 mJ
I D(ISO) = 12 A
Electrostatic discharge voltage (Human Body Model) VESD 3000 V
according to MIL STD 883D, method 3015.7 and
EOS/ESD assn. standard S5.1 - 1993
Load dump protection V LoadDump2) = V A + VS VLD
VIN=low or high; V A=13.5 V
t d = 400 ms, RI = 2 Ω, ID=0,5*12A 100
t d = 400 ms, RI = 2 Ω, ID= 12A 84
DIN humidity category, DIN 40 040 E
IEC climatic category; DIN IEC 68-1 40/150/56

Thermal resistance
junction - case: RthJC 0.84 K/W
junction - ambient: RthJA 75
SMD version, device on PCB: 3) RthJA 45

1A sensor holding current of 500 µA has to be guaranted in the case of thermal shutdown (see also page 3)
2V is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
Loaddump
3Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for Drain connection. PCB is vertical
without blown air.

Semiconductor Group Page 2 02.12.1998

 BTS 941

Electrical Characteristics
Parameter Symbol Values Unit
at Tj=25°C, unless otherwise specified min. typ. max.
Characteristics
Drain source clamp voltage VDS(AZ) 60 - 73 V
T j = - 40 ...+ 150°C, ID = 10 mA
Off state drain current I DSS - - 20 µA
VDS = 32 V, T j = -40...+150 °C, V IN = 0 V
Input threshold voltage VIN(th) 1.3 1.7 2.2 V
I D = 2,7 mA
Input current - normal operation, ID<ID(lim): IIN(1) - 35 100 µA
VIN = 10 V
Input current - current limitation mode, I D=ID(lim): I IN(2) - 270 500
VIN = 10 V
Input current - after thermal shutdown, ID=0 A: I IN(3) 1000 2500 4000
VIN = 10 V
Input holding current after thermal shutdown I IN(H)
T j = 25 °C 500 - -
T j = 150 °C 300 - -
On-state resistance RDS(on) mΩ
I D = 12 A, VIN = 5 V, Tj = 25 °C - 31 34
I D = 12 A, VIN = 5 V, Tj = 150 °C - 52 68
On-state resistance RDS(on)
I D = 12 , VIN = 10 V, T j = 25 °C - 25 28
I D = 12 , VIN = 10 , T j = 150 - 45 56
Nominal load current (ISO 10483) I D(ISO) 12 A
VIN = 10 V, V DS = 0.5 V, TC = 85 °C

Semiconductor Group Page 3 02.12.1998

 BTS 941

Electrical Characteristics
Parameter Symbol Values Unit
at Tj=25°C, unless otherwise specified min. typ. max.
Characteristics
Initial peak short circuit current limit ID(SCp) - 160 - A
VIN = 10 V, VDS = 12 V
Current limit 1) ID(lim)
VIN = 10 V, VDS = 12 V, tm = 350 µs,
Tj = -40...+150 °C, without RCC 6 12 25
VIN = 10 V, VDS = 12 V, tm = 350 µs,
Tj = -40...+150 °C, RCC = 0 Ω 100 130 170

Dynamic Characteristics
Turn-on time VIN to 90% I D: t on - 40 100 µs
RL = 2,2 Ω, VIN = 0 to 10 V, Vbb = 12 V
Turn-off time V IN to 10% ID: t off - 70 170 µs
RL = 2,2 Ω, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on 70 to 50% Vbb: G9 '6GWRQ - 1 3 V/µs
RL = 2,2 Ω, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off 50 to 70% Vbb: G9'6GW RII - 1 3
RL = 2,2 Ω, VIN = 10 to 0 V, Vbb = 12 V

Protection Functions
Thermal overload trip temperature T jt 150 165 - °C
Unclamped single pulse inductive energy EAS mJ
I D = 12 A, Tj = 25 °C, Vbb = 32 V 4000 - -
I D = 12 A, Tj = 150 °C, Vbb = 32 V 900 - -

Inverse Diode
Inverse diode forward voltage VSD - 1.13 - V
I F = 5*12A, t m = 300 µS, VIN = 0 V

1Device switched on into existing short circuit (see diagram Determination of I

D(lim) . Dependant on the
application, these values might be exceeded for max. 50 µs in case of short circuit occurs while the
device is on condition

Semiconductor Group Page 4 02.12.1998

 BTS 941

Block Diagramm

Terms Inductive and overvoltage output clamp

RL D
V
Z

I IN 3
D
IN
1 ID VDS Vbb
HITFET S
RCC
CC 5
V IN 4 S
V
CC HITFET

The ground lead impedance of RCC Short circuit behaviour

should be as low as possible
V IN

Input circuit (ESD protection) I D(SCp)

I D(Lim)
ID
IN

ESD-ZD I

Source
t0 tm t1 t2

t0: Turn on into a short circuit

ESD zener diodes are not designed tm: Measurementpoint for ID(lim)
for DC current > 2 mA @ VIN>10V. t1: Activation of the fast temperature sensor and
regulation of the drain current to a level where
the junction temperature remains constant.
t2: Thermal shutdown caused by the second
temperature sensor, achieved by an
integrating measurement.

Semiconductor Group Page 5 02.12.1998

 BTS 941

Maximum allowable power dissipation On-state resistance

Ptot = f(Tc) RON = f(Tj ); ID=12A; VIN =10V

BTS 941
160 60

W mΩ

120

RDS(on)
40
Ptot

100 max.

80 30
typ.

60
20

40

10
20

0 0
0 20 40 60 80 100 120 °C 160 -50 -25 0 25 50 75 100 °C 150

150 Operatin

On-state resistance Typ. input threshold voltage

RON = f(Tj ); ID= 12A; VIN=5V VIN(th) = f(Tj); ID =2,7A; VDS=12V

70 2.2

V
mΩ
1.8

1.6
RDS(on)

50
VIN(th)

1.4
40 max.
1.2
typ.
1.0
30

0.8

20 0.6

0.4
10
0.2

0 0.0
-50 -25 0 25 50 75 100 °C 150 -50 -25 0 25 50 75 100 °C 150
Tj Tj

Semiconductor Group Page 6 02.12.1998

 BTS 941

Typ. transfer characteristics Typ. short circuit current

I D = f(V IN); V DS=12V; Tj=25°C IDlim = f(Tj); RCC =0Ω, VDS =12V
Parameter: VIN
140 150

A
A
10V

100
7V
100
ID

ID
80 6V
75

60 5V

50
40
4V

25
20
3V

0 0
0 2 4 6 V 10 -50 -25 0 25 50 75 100 °C 150

VIN Tj
Typ. output characteristic Safe Operating Area
ID = f(VDS); T j=25°C ID(SC) = f(VDS ); Tj =25°C
Parameter: VIN
100 180
10V

A 6V
140

120
ID

60
ID

5V
100

80
40

4V 60

20 40

Vin=3V 20

0 0
0 2 4 V 8 0 10 20 30 V 50
VDS VDS

Semiconductor Group Page 7 02.12.1998

 BTS 941

Typ. current limit versus R CC Typ. current sense characteristics

I D(lim) = f(RCC); T j=25°C VCC = f(ID); VIN=10V
Parameter: VIN Parameter: RCC , Tj
140 500
68 Ohm
10V
A no Rcc

mV

100
125C°
25C°

VCC
ID

300 27 Ohm
80

5V
60
200

40 10 Ohm

100
20

0 0 1 2 3 4 0
10 10 10 10 Ω 10 0 10 20 30 A 50
RDS(on) ID

Transient thermal impedance

ZthJC = f(tP)
Parameter: D=t P/T
10 1

K/W

10 0
RthJC

D=0.5

0.2
10 -1
0.1

0.05

0.02
-2
10 0.01
0.005

0
-3
10 -7 -6 -5 -4 -3 -2 -1 0 2
10 10 10 10 10 10 10 10 s 10

tP

Semiconductor Group Page 8 02.12.1998

 BTS 941

Application examples:

Current Sense Features and Status

Signals

IN D

µC HITFET V
CC S bb

V RCC
CC

IN

open
V cc
load

thermal
V cc
shutdown
reached triptemperature

The accuray of Vcc is at each

temperature about ±10 %

Status signal of thermal shutdown by

monitoring input current

R St

IN D

µC V
IN
HITFET V
CC bb
S

∆V
V
IN

thermal shutdown

∆V = RST *IIN(3)

Semiconductor Group Page 9 02.12.1998

 BTS 941

Package and ordering code

all dimensions in mm

Ordering code: Q67060-S6702-A4 Ordering Code: Q67060-S6702-A2

Ordering Code: Q67060-S6702-A3

Semiconductor Group Page 10 02.12.1998

 BTS 941

Edition 7.97
Published by Siemens AG,
Bereich Halbleiter Vetrieb,
Werbung, Balanstraße 73,
81541 München
© Siemens AG 1997
All Rights Reserved.
Attention please!
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For questions on technology, delivery and prices please contact the Semiconductor Group Offices in Germany
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Critical components1 of the Semiconductor Group of Siemens AG, may only be used in life-support devices or
systems2 with the express written approval of the Semiconductor Group of Siemens AG.
1)A critical component is a component used in a life-support device or system whose failure can reasonably be
expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of
that device or system.
2)Life support devices or systems are intended (a) to be implanted in the human body, or (b) to support and/or
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user or other persons may be endangered.

Semiconductor Group Page 11 02.12.1998

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