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JEDEC TO-220AB JEDEC TO-251AA
SOURCE
DRAIN
SOURCE
GATE
DRAIN
GATE
DRAIN (FLANGE) DRAIN (FLANGE)
JEDEC TO-252AA
DRAIN (FLANGE)
GATE
SOURCE
4-112 CAUTION: These devices are sensitive to electrostatic discharge; follow proper ESD Handling Procedures.
http://www.intersil.com or 407-727-9207 | Copyright © Intersil Corporation 1999.
RFD8P05, RFD8P05SM, RFP8P05
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to 150oC.
NOTE:
2. Pulse test: pulse width ≤ 300µs, Duty Cycle ≤ 2%.
3. Repetitive rating: pulse width is limited by maximum junction temperature.
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RFD8P05, RFD8P05SM, RFP8P05
1.2 -10
POWER DISSIPATION MULTIPLIER
1.0
-8
-4
0.4
-2
0.2
0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE CASE TEMPERATURE
10 100
If R = 0
IAS , AVALANCHE CURRENT (A) tAV = (L) (IAS) / (1.3 RATED BVDSS - VDD)
DC OPERATION If R ≠ 0
ID , DRAIN CURRENT (A)
TC = 25oC
TJ = 175oC
0.1 1
-1 -10 -100 0.1 1 10 100
VDS , DRAIN TO SOURCE VOLTAGE (V) tAV, TIME IN AVALANCHE (ms)
FIGURE 3. FORWARD BIAS SAFE OPERATING AREA FIGURE 4. UNCLAMPED INDUCTIVE SWITCHING CAPABILITY
-20 20
IDS(ON), DRAIN TO SOURCE CURRENT (A)
VGS = -8V
-12 12
-55oC
VGS = -7V
-8 8
VGS = -6V
-4 4
VGS = -5V
VGS = -4V
0 0
0 -2 -4 -6 -8 -10 0 -3 -6 -9 -12 -15
VDS, DRAIN TO SOURCE VOLTAGE (V) VGS , GATE TO SOURCE VOLTAGE (V)
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RFD8P05, RFD8P05SM, RFP8P05
3.0 1.50
PULSE DURATION = 80µs VGS = VDS, ID = -250µA
DUTY CYCLE =0.5% MAX
NORMALIZED ON RESISTANCE
THRESHOLD VOLTAGE
NORMALIZED GATE
2.0 1.00
1.5 0.75
1.0 0.50
0.5 0.25
0 0
-50 0 50 100 150 200 -50 0 50 100 150 200
TJ , JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC)
2.0 1000
ID = -250µA VGS = 0V, f = 1MHz
CISS = CGS + CGD
NORMALIZED DRAIN TO SOURCE
CRSS = CGD
800
COSS ≈ CDS + CGS
BREAKDOWN VOLTAGE
C, CAPACITANCE (pF)
1.5
600
CISS
1.0
400
COSS
0.5
200
CRSS
0 0
-50 0 50 100 150 200 0 -5 -10 -15 -20 -25
TJ , JUNCTION TEMPERATURE (oC) VDS , DRAIN TO SOURCE VOLTAGE (V)
FIGURE 9. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 10. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VOLTAGE vs JUNCTION TEMPERATURE
-50 -10
VDS , DRAIN TO SOURCE VOLTAGE (V)
GATE
VGS , GATE TO SOURCE VOLTAGE (V)
0 0
I I
20 G(REF) TIME (µs) 80 G(REF)
IG(ACT) IG(ACT)
4-115
RFD8P05, RFD8P05SM, RFP8P05
VDS
tAV
L 0
VARY tP TO OBTAIN
REQUIRED PEAK IAS RG
-
VDD
+
0V DUT VDD
tP IAS
VGS
IAS VDS
tP
0.01Ω
BVDSS
FIGURE 12. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 13. UNCLAMPED ENERGY WAVEFORMS
tON tOFF
td(ON) td(OFF)
tr tf
0
RL 10% 10%
DUT - VDS
VDD 90% 90%
RG
VGS + VGS
0
10%
50% 50%
PULSE WIDTH
90%
FIGURE 14. SWITCHING TIME TEST CIRCUIT FIGURE 15. RESISTIVE SWITCHING WAVEFORMS
VDS VDS
Qg(TH)
RL 0
VGS= -1V
Ig(REF)
Qg(TOT)
0
Ig(REF)
FIGURE 16. GATE CHARGE TEST CIRCUIT FIGURE 17. GATE CHARGE WAVEFORMS
4-116
RFD8P05, RFD8P05SM, RFP8P05
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
4-117