Name : _________________________________________________ Group No.

: _____
Subject/Sec : ____________________________ Schedule : ____________________ Score : _____
Instructor : _____________________________________________ Date Performed : ___________

Laboratory Experiment No. : 6

AMPLIFIER FREQUENCY RESPONSE - JFET

OBJECTIVE :

1. To be able to determine the input impedance and the output impedance of an amplifier using
junction field transistor ( JFET ).
2. To measure the voltage gain and examine the input-output waveform and phase characteristic
of an amplifier using JFET.

BACKGROUND INFORMATIONS :

Junction field-effect transistor is a three terminal device with one terminal capable of controlling
the current between the other two. The terminals of the JFET are the drain, source and gate. Usually the
drain terminal is at the upper end while the source is at the lower end.
Junction field-effect transistor has two basic types, the n-channel and the p-channel. For the n-
channel JFET, the n-type material is the major part of the structure that forms the channel between the
embedded layers of p-type materials. For the p-channel JFET, the p-type material is the major part of the
structure that forms the channel between the embedded layers of n-type materials.
Junction field-effect transistor is always operated with the gate-source pn junction reverse-biased.
Reverse biasing the gate-source with a negative voltage produces a depletion region along the pn junction,
which extends into the n-channel and that it increases its resistance by restricting the channel width.
Reverse biasing the gate-source pn junction also produces a very high input impedance which is on of the
good characteristic of an amplifier and also results to gate current being zero.
drain
drain

1 4

2 5
gate gate

3 6

source source

n-channel JFET p-channel JFET

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MATERIALS/EQUIPMENTS :

Power Supply
Function/Signal Generator
Multi-meter ( Analog or Digital )
Oscilloscope
Transistors :
1 2N3954 or equivalent ( n-channel )
Resistors :
1 91 kΩ ( ½ W)
1 8.2 kΩ ( ½ W )
2 3.3 kΩ ( ½ W )
1 1 kΩ ( ½ W )
Capacitors :
3 10 µF

WIRING DIAGRAM :

0
V1
30 V
3

R4
R1 3.3kΩ
91kΩ C3
5 Vo
10uF
Q1A
C1 6
2
2N3954
10uF
XFG1 R5
4 3.3kΩ
1
R3
8.2kΩ R2 C2
1kΩ 10uF

Figure 2

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LABORATORY PROCEDURES :

1. Make sure that the equipments are properly calibrated.

2. Connect the circuit of Figure 2. Adjust the function generator input to 20 mV(peak), 60 Hz frequency
and measure the following ac currents and voltages using an analog or a digital multi-meter. Record
your data in column 2 of the table below.

Parameters Bypassed RE Unbypassed RE

Ii
Io
Vi
Vo

3. Connect the oscilloscope probes of Channel A and Channel B at the output terminals and input
terminals of the common-emitter configuration. Set the oscilloscope to dual mode, and adjust the
horizontal scale to 10 ms/div. Adjust the vertical scale of Channel A to 200 mV/div and the vertical scale
of Channel B to 500 mV/div. Adjust the vertical position of the two and determine the phase difference
between the input and the output voltages. Draw the waveform below.

Graph

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OBSERVATIONS :

CONCLUSION :

QUESTIONS AND PROBLEMS :

1. Compute Zi, Zo, Ai, and Av using the values obtained from procedure 1 on a separate sheet of bond
paper.

2. What are the advantages of using JFET than BJT for amplifier ?

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