Journal of Engineering and Sustainable Development Vol. 22, No. 2 (part-2), March 2018 www.jeasd.

org (ISSN 2520-0917)

The Fourth Scientific Engineering and First Sustainable Engineering Conference

Vol. 22, No. 2 (part-2), March 2018

ISSN 2520-0917
www.jeasd.org

A COMPARATIVE STUDY BETWEEN SILICON, METALS AND

SOME BIODEGRADABLE MATERIALS IN THE GATE
FABRICATION PROCESS OF THE VOLTAGE CONTROLLED
SWITCH TRANSISTOR: EXPERIMENTALLY AND
THEORETICALLY

*Munaf Fathi Badr1, Suhad Dawood Salman2

P P P

1) Asst. Prof., Mechanical Engineering Department, Mustansiriyah University, Baghdad, Iraq.

2) Lecturer, Mechanical Engineering Department, Mustansiriyah University, Baghdad, Iraq.

Abstract: Recently, sustainable issues are the significant subject of the environmental attributes which
encourage manufacturers to look for biodegradable and bio-sourced products in any application besides
lower costs and improved performance.In this paper a comparative study between using the silicon
material instead of metal in the formulation of the gate of the Metal-Oxide-Semiconductor Field Effect
Transistor (MOSFET) has been presented. Substitution of traditional materials to manufacture the gate of
the voltage controlled switch (MOSFET) by alternative polymers to meet environmental requirements
and understood the need for sustainable issues are also introduced.A theoretical review was involving
mathematical calculations to realize the difference in employing the silicon and other metals such as
copper in fabrication process. The experimental test process in this approach was focused on the
characteristics of the selective material to provide the required electrical properties with respect to
specific layout dimensions of the sheet of the gate.
Keywords: MOSFET transistor, fabrication process, silicon material, biodegradable material, electrical
conductivity,

‫ﺩﺭﺍﺳﺔ ﻣﻘﺎﺭﻧﺔ ﻧﻈﺮﻳﺔ ﻭﻋﻤﻠﻴﺔ ﻋﻠﻰ ﺍﺳﺘﺨﺪﺍﻡ ﻣﺎﺩﺓ ﺍﻟﺴﻴﻠﻜﻮﻥ ﻭﺍﻟﻤﻌﺎﺩﻥ ﻭﺑﻌﺾ ﺍﻟﻤﻮﺍﺩ ﺍﻟﻄﺒﻴﻌﻴﺔ ﻓﻲ‬
‫ﺗﺼﻨﻴﻊ ﺑﻮﺍﺑﺔ ﻣﻔﺘﺎﺡ ﺍﻟﺴﻴﻄﺮﺓ ﻋﻠﻰ ﺍﻟﻔﻮﻟﺘﻴﺔ ﺍﻟﻜﻬﺮﺑﺎﺋﻴﺔ ﺍﻟﺘﺮﺍﻧﺰﺳﺘﻮﺭ‬
‫ ﻓﻲ ﺍﻻﻭﻧﺔ ﺍﻻﺧﻴﺮﺓ ﺍﺻﺒﺤﺖ ﻣﺘﻄﻠﺒﺎﺕ ﺍﻟﻬﻨﺪﺳﺔ ﺍﻟﻤﺴﺘﺪﺍﻣﺔ ﻣﻦ ﺍﻻﻣﻮﺭ ﺫﺍﺕ ﺍﻻﻫﻤﻴﺔ ﻗﻲ ﻛﺜﻴﺮ ﻣﻦ ﺍﻟﻤﺠﺎﻻﺕ ﺑﺤﻴﺚ ﺍﺩﺕ ﺍﻟﻰ ﺗﺸﺠﻴﻊ‬:‫ﺍﻟﺨﻼﺻﺔ‬
.‫ﻛﺜﻴﺮ ﻣﻦ ﺍﻟﻤﺼﻨﻌﻴﻦ ﻋﻠﻰ ﺍﻳﺠﺎﺩ ﺍﻟﺒﺪﺍﺋﻞ ﺍﻟﻄﺒﻴﻌﻴﺔ ﺍﻟﺤﻴﻮﻳﺔ ﻻﺳﺘﺨﺪﺍﻣﻬﺎ ﻓﻲ ﻛﺜﻴﺮ ﻣﻦ ﺍﻟﺘﻄﺒﻴﻘﺎﺕ ﻭﺑﻜﻠﻔﺔ ﺍﻗﺘﺼﺎﺩﻳﺔ ﻭﺍﻁﺌﺔ ﻣﻊ ﺗﺤﺴﻴﻦ ﻓﻲ ﺍﻻﺩﺍء‬
‫ﻓﻲ ﻫﺬﺍ ﺍﻟﺒﺤﺚ ﺗﻢ ﺗﻘﺪﻳﻢ ﺩﺭﺍﺳﺔ ﻣﻘﺎﺭﻧﺔ ﺣﻮﻝ ﺍﻣﻜﺎﻧﻴﺔ ﺍﺳﺘﺨﺪﺍﻡ ﺍﺣﺪﻯ ﺍﻟﻤﻮﺍﺩ ﺍﻟﻄﺒﻴﻌﻴﺔ ﺍﻟﺤﻴﻮﻳﺔ ﻛﺒﺪﺍﺋﻞ ﻣﻘﺘﺮﺣﺔ ﻓﻲ ﻋﻤﻠﻴﺔ ﺍﻟﺘﺼﻨﻴﻊ ﻟﺒﻮﺍﺑﺔ‬
‫ ﺍﻟﺪﺭﺍﺳﺔ ﺍﺷﺘﻤﻠﺖ ﺍﻳﻀﺎ ﻋﻠﻰ ﺟﻮﺍﻧﺐ ﻧﻈﺮﻳﺔ‬.‫( ﺍﻟﺬﻱ ﻳﺴﺘﺨﺪﻡ ﻛﻤﻔﺘﺎﺡ ﺫﻭ ﺳﻴﻄﺮﺓ ﻋﻠﻰ ﺍﻟﻔﻮﻟﺘﻴﺔ ﺍﻟﻜﻬﺮﺑﺎﺋﻴﺔ‬MOSFET) ‫ﺍﻟﺘﺮﺍﻧﺰﺳﺘﻮﺭ ﻧﻮﻉ‬
‫ﺗﺤﻮﻱ ﻋﻠﻰ ﺣﺴﺎﺑﺎﺕ ﺭﻳﺎﺿﻴﺔ ﻭﺍﺧﺮﻯ ﺗﻄﺒﻴﻘﻴﺔ ﻟﻤﻌﺮﻓﺔ ﺍﻟﻔﺮﻕ ﻓﻲ ﺍﺳﺘﺨﺪﺍﻡ ﺍﻟﺴﻠﻴﻜﻮﻥ ﺍﻭ ﺍﻟﻤﻌﺎﺩﻥ ﺍﻻﺧﺮﻯ ﻣﺜﻞ ﺍﻟﻨﺤﺎﺱ ﻓﻲ ﻋﻤﻠﻴﺔ ﺍﻟﺘﺼﻨﻴﻊ ﻣﻦ‬
‫ ﺍﻟﺒﺤﺚ ﺗﻀﻤﻦ ﺍﻳﻀﺎ ﺍﺟﺮﺍء ﺍﻟﺘﺠﺎﺭﺏ ﺍﻟﻤﻌﻤﻠﻴﺔ ﻭﺍﻟﻔﺤﻮﺻﺎﺕ ﺍﻟﻤﺨﺘﺒﺮﻳﺔ ﺍﻟﺘﻲ ﺭﻛﺰﺕ ﻋﻠﻰ ﻣﺪﻯ ﺗﻮﻓﺮ ﺍﻟﺨﺼﺎﺋﺺ‬.‫ﻧﺎﺣﻴﺔ ﺍﻟﺨﺼﺎﺋﺺ ﺍﻟﻜﻬﺮﺑﺎﺋﻴﺔ‬
. ‫ﺍﻟﻜﻬﺮﺑﺎﺋﻴﺔ ﺍﻟﻤﻄﻠﻮﺑﺔ ﻓﻲ ﺍﻟﻤﻮﺍﺩ ﺍﻟﻤﺨﺘﺎﺭﺓ ﻭﺑﺎﺑﻌﺎﺩ ﻫﻨﺪﺳﻴﺔ ﻣﺤﺪﺩﺓ ﻟﺘﺼﻨﻴﻊ ﺑﻮﺍﺑﺔ ﺍﻟﺘﺮﻧﺰﺳﺘﻮﺭ‬

1. Introduction
2T

In the last decades the metal oxide semiconductor field effect transistor (MOSFET)
was considered as one of the most important types of the transistors that could be used

* munaf _67@yahoo.com
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The Fourth Scientific Engineering and First Sustainable Engineering Conference

in several electronic applications such as amplifying electronic signals or voltage

controlled switching devices. It represents the basic element in the design of the most
complex integrated circuits because of its simplicity in structure and eases to integration
as well as consumed low electrical power [1],[2].
An integrated circuit or (IC) is simply defined as a combination of several electronic
circuits that constructed in very small plate made of silicon named as chip which
represent the basic semiconductor material. This formulation process of integrated
circuit can be produced as much as smaller size than a discrete circuits made from
separately or independent electronic components [3].
Historically, the first semiconductor chips consists of two transistors but the rapid
advances leads to add more transistors and more functions or systems were integrated
over time. Although bipolar junction transistors (BJTs) was invented first, but it can be
seen today that all microprocessors use the MOSFET transistors instead of bipolar
because it can be operated at low level of voltages in comparison with the bipolar
(BJTs) [1,3].
The manufacturing of MOSFET has been done by patterning multiple layers of
semiconductor materials, metals in addition to dielectrics. All these layers are patterned
according to the specified design. Fabricating a particular design requires wafers which
usually made of silicon to go through all processing steps under control of a full set of
lithographic photo masks. Wafer or also called substrate can be defined as a thin slice of
semiconductor material, such as crystalline silicon that it was used in electronic
applications of the fabrication process of integrated circuits [4].
Consequently the traditional MOSFET is obtained by growing a layer of silicon
dioxide (SiO 2 ) on the top of a silicon substrate and then depositing a layer of metal or
R R

polycrystalline silicon material. The older technology was used metals such as
Aluminum (Al) to formulate the gate of the MOSFET while the newer technology uses
polysilicon material as a conductive region that electrically isolated from the substrate
of the transistor by a layer of gate oxide. It can be noticed that the industry which deals
with MOSFET technology had moved away from metals in forming the gate material
due to the complex fabrication process of the metals [4].
In this work, a comparative study was made between the current materials that used
in fabrication process of the voltage controlled switch (MOSFET) and alternative
polymers like low-density polyethylene (LDPE), Polypropylene (PP), Polystyrene (PS),
Polyvinyl chloride (PVC) and polyvinyl butyral (PVB). In addition, experimentally
evaluating of the electrical conductivity tests for polymers was done to identify the
resistivity or specific resistance (ρ) [5-7].
This paper was organized as in the following, the brief review of the MOSFET
conduction states and its fabrication process was introduced in sections two and three
respectively while the results of the experimental work has been presented in section
four followed by conclusions in section five.

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The Fourth Scientific Engineering and First Sustainable Engineering Conference

2. Basic Configuration of MOSFET

The MOSFET transistor is represented as a four terminals device that has source
denoted by (S), gate (G), drain (D), and body (B) as shown in figure (1) [1]. The body
or substrate of the MOSFET is usually connected to the source terminal, making it a
three terminal device like other types of field effect transistors. Because of these two
terminals are internally connected to each other, so it can be considered the MOSFETs
as a three terminals device with a gate, drain and source and classified into P-channel
(PMOS) and N-channel (NMOS) as shown in figure (1) [1-3].

Figure 1. The Symbols of MOSFET Transistors

As mentioned in figure (1) the substrate of the MOSFET is denoted by (B) or bulk
contact and bulk (body) in which the charge carriers could travel through the
semiconductors and not just at the surface. Physically the substrate of the (MOSFET) is
normally made of silicon that doped to formulate either p-type or n-type. Actually the
(MOSFET) can be worked in three operation regions depending on the differences in
the voltages existing at the three terminals of the transistor as shown in figure (2).

Figure 2. The Voltages across the MOSFET Transistor

The states of operation of MOSFET transistor as a voltage controlled switch is either

(OFF) state and in this case there is no electrical current will pass or the second state in
which the current will flow and the transistor is (ON). The states of conduction of
MOSFET can be subdivided into linear, cut off and saturation regions according to the
level of the applied voltages across the terminals of the transistor as well as the
threshold voltage (Vt)) [1]. Mathematically the equations that govern the operation of
the transistor are written in terms of current that passing between the drain and source

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The Fourth Scientific Engineering and First Sustainable Engineering Conference

(I D ). This equation involves the gain factor of the transistor (β) which depends on both
R R

the physical parameters and the important dimensions of the transistor layout as shown
figure (3) [3].

Figure 3. The Basic Layout of the MOSFET Transistor

Hence the mathematical equation that describes the gain factor of the MOSFET
transistor was formulated as in the following [3]:-

ε ox W (1)
β = µ( )( )
tox L

where
β = the gain factor of the MOSFET, (A/V2). P P

µ= a measure of the mobility of the charge carriers, (m2/V.s). P P

Ɛ ox = the electric permittivity of the gate oxide material, (F/m).

R R

t ox = the thickness of the gate oxide,(µm).

R R

W = the actual width of the poly gate, (µm).

L = the length of the transistor gate, (µm).

3. Fabrication of MOSFET
As mentioned previously the metal-oxide-semiconductor field-effect transistor
(MOSFET) acts as a voltage-controlled switch with three terminals named source,
drain, and gate. In fact the name of metal-oxide-semiconductor comes from the three
layers of material that make up the transistor. The symbol “n” refers to the negative
charge and represents the electrons, while the symbol “p” refers to the positive charge
and represents the holes that flow through a channel in the semiconductor material
between the source and the drain of the transistor [3].
At the current fabrication technology of (MOSFET) the process has been done in a
manner which allows transistors to be formed in the semiconductor material. Basically
the fabrication steps of the MOSFET start with blank silicon wafer covered with layer
of silicon dioxide exposed with ultra-violate (UV) light to formulate the and positive
and negative regions (p-type and n-type) of the transistor [1].
the Polycrystalline silicon or (Poly) has been used to formulate the gates of the
MOSFET transistor. Polysilicon gate, which is patterned before the doping process

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The Fourth Scientific Engineering and First Sustainable Engineering Conference

actually defines the precise location of the channel region and therefore the locations of
the source and the drain regions of transistor will be opened as wells or tubs in the
substrate. Since this procedure permits very precise positioning of the two regions
relative to the gate, it is also called a self-aligned process as shown in figure (4) [4].

Figure 4. The Basics fabrication steps Layout of the MOSFET

4. Theoretical and Experimental Work

In the theoretical and experimental work, the electrical resistance of the selected
materials that can be used in formulation the gate of the MOSFET has been taken as the
distinguishing factor in studying the electrical properties of these materials.
Conceptually the electrical resistance of any material represented the property of this
material to oppose the flow of electric current through it. The materials can be classified
according to their electrical resistance into conductors, insulators and semiconductors.
The evaluating of electrical resistance of conductor materials in uniform shape depends
on its length, cross sectional area, and the material of which it is made under condition
that the temperature is not varied or changed. The mathematical equations that
describing the resistance of the conductor material with specified dimensions can be
written as in the following [8-10]:-

l (2)
R= ρ
A

where
ρ = the resistivity or specific electrical resistance of the material in (Ω-m).
l =the length in meter (m).
A =the cross-sectional area in (m²).
The resistivity or specific resistance (ρ) of different materials such as silver, copper,
gold and aluminum as well as silicon is listed as shown in table (1).

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The Fourth Scientific Engineering and First Sustainable Engineering Conference

Table 1. The resistivity of materials at (20°C)

Material Resistivity (ρ)
(Ω-m)

Silver 1.59×10−8
P

Copper 1.72×10−8
P

Gold 2.44×10−8
P

Aluminum
1T 1T 2.65×10−8
P

Silicon
1T 1T 6.40×102 P

Theoretically if the selective materials in table (1) have been taken to formulate the
gate of the MOSFET in rectangular shape or more specified as a thin sheet under
assumed dimensions (height (h) =0.1 µm, width (w) =0.3 µm, length (l) =0.6 µm), then
the measurements values of electrical conductivity for these materials can be obtained
and listed as shown in table (2).

Table 2. The resistivity, conductivity and sheet resistance, of gate materials at (20 °C )
Material Resistivity (ρ) Conductivity (σ)
(Ω-m) (Ω-m)-1 P

Silver 1.59×10−8 P 62893081.76

Copper 1.72×10−8 P 58139534.88
Gold 2.44×10−8 P 40983606.56
Aluminum
1T 1T 2.65×10−8 P 37735849.06
Silicon
1T 1T 6.40×102 P 0.0015625
Note: - σ=1/ρ

Functionally, it can be taken the sheet resistance of material which represents as a

special case of measurement the specific electrical resistance with a uniform sheet
thickness as in the following: -

l ρ (3)
R = ( )( )
w h

where
R sq = sheet resistance = (ρ /h) and its unit denoted "Ω/□" or "Ω/sq."
R R

Then "(3)" become

l (4)
R = Rsq ( )
w

Hence the theoretical calculations of the sheet resistance of the MOSFET gate
materials are listed as shown in table (3).

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Table 3. The resistivity, conductivity and sheet resistance, of gate materials at (20 °C )
Material Resistivity (ρ) Conductivity (σ) Sheet resistance
(Ω-m) (Ω-m)-1 P (Ω/sq)
Silver 1.59×10−8 P 62893081.76 0.159
Copper 1.72×10−8 P 58139534.88 0.172
Gold 2.44×10−8 P 40983606.56 0.244
Aluminum
1T 1T 2.65×10−8 P 37735849.06 0.265
Silicon
1T 1T 6.40×102 P 0.0015625 6.40×109 P

Also electrical resistance of conducting materials depends on temperature. If

temperature is varied then the new electrical resistance can be calculated as in the
following equation [7]:-

R2 = R1 (1 + α (T2 − T1 )) (5)

where
R 1 = the value of the resistance at (T 1 =20 °C)
R R R R

R 2 = the value of the resistance at new temperature (T 2 ).

R R R R

α=temperature coefficient.
According to "(5)", the electrical resistance of the gate material will be varied
proportionally to the changing in the temperature .Therefore the new values of electrical
resistance of the gate materials are listed as sown in table (4).

Table 4. The sheet resistance of gate materials at different temperature

R sheet
R (α) T2R T2
R T2 R T2 R T2R

(Ω/sq) ( /K ) (50ºC) (100ºC) (200ºC) (300ºC) (400ºC)

Silver 0.0038 0.1771 0.2073 0.2678 0.3282 0.3886

copper 0.00393 0.1923 0.2261 0.2937 0.3613 0.4289
Gold 0.0034 0.2689 0.3104 0.3933 0.4763 0.5592
Aluminum 0.0039 0.2960 0.3477 0.4510 0.5544 0.6577

As mentioned in table (3) the sheet resistance of the silicon material of the gate is
very high with respect to the given dimensions. In the most of the fabrication process
for the MOSFET, the gate material is made of polysilicon because of the silicon is
considered as semiconductor and it is doped in order to improve its electrical properties.
Poly silicon is produced by highly doped the silicon with donors or acceptors under
some chemical process at high temperatures to provide better electrical properties and to
reduce its electrical resistance [10].
Hence the sheet resistance of the poly gate with different concentration of doping can
be calculated as in the table (5).

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Table 5. The sheet resistance of poly gate at different concentration

Concentration of poly (ρ) R sheet
R

(N)/cm3 P (Ω.m) (Ω/sq)

2.35×1015 P 5.833597 58335971.8
3.49×1015 P 3.973452 39734521
5.18×1015 P 2.715413 27154130.7
7.69×1015 P 1.86357 18635701.5
1.14×1016 P 1.285856 12858555
1.69×1016 P 0.893227 8932269.94
2.51×1016 P 0.62564 6256404.32
3.73×1016 P 0.442596 4425963.21
5.53×1016 P 0.316769 3167694.17
8.21×1016 P 0.229716 2297158.1

Experimentally and as an alternative approach to formulate the gate of the MOSFET,

it has been selected another materials such as low-density polyethylene (LDPE),
Polypropylene (PP), Polystyrene (PS), Polyvinyl chloride (PVC) and poylvinyl butyral
(PVB) as shown in figure (5) [5-7]. Laboratory test has been carried out to investigate
the ability of these materials to provide the required electrical properties instead of
silicon or metals.

Figure 5. The laboratory samples of gate materials for MOSFET

The electrical tests were done to evaluate the electrical properties and especially the
resistivity and the related conductivity of the specified samples of these materials. The
practical measurement were carried out and the results obtained in the state company for
inspection and engineering rehabilitation (SIER) in Ministry of Industry and Minerals ,
in Baghdad, Iraq as shown in figure (6 ).

Figure 6. The practical tests of the selected samples

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The obtained practical results over the selected samples involving the specific
electrical resistance (ρ), conductivity and sheet resistance are listed as shown in table
(6).

Table 6. The resistivity, conductivity and sheet resistance of selective materials at (20°C)
Material Resistivity (ρ) Conductivity (σ) Sheet resistance
(Ω-m) (Ω-m)-1 P (Ω/sq)
PS 1.60×1016 P 6.25×10-17 P 1.6×1023 P

Polystyrene
LDPE 1.50×1015 P 6.67×10-16 P 1.5×1022 P

low-density polyethylene
PP 8.40×1014 P 1.19×10-15 P 8.4×1021 P

Polypropylene
PVC 2.00×1014 P 5.00×10-15 P 2×1021 P

Polyvinyl chloride
PVB 7.50×1011 P 1.33×10-12 P 7.5×1018 P

poylvinyl butyral

However the difference in electrical properties between silicon poly silicon, metals
as well as the Biodegradable materials can be displayed as shown in figure (7), (8) ,(9)
and (10) respectively.

Figure 7. The conductivity of silicon material and selected metals

Figure 8. The effect of temperature on the sheet resistance of the selected metals

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The Fourth Scientific Engineering and First Sustainable Engineering Conference

Figure 9. The sheet resistance of poly silicon and metals

Figure 10. The resistivity of silicon metals and some biodegradable materials

5. Conclusions
1. Biodegradable materials have been examined to study the possibility of replacing
material used in voltage controlled switch (MOSFET) to achieve the need for
sustainable and environmental requirements.
2. Many performance advantages can be achieved by using polymers which bring
sustainable and environmental benefits.
3. It can be concluded that the high electrical resistance of the polymers may cause
some drawbacks in getting the required electrical conductivities. Among the practical
test of the suggested polymers types, poylvinyl butyral (PVB) material can be
considered as the best choice that may be used to replace the current material in
fabrication process of the gate of the voltage controlled switch (MOSFET) but after
changing its electrical properties.
4. In contrast to metals, the poly silicon material has not low level of electrical
resistance and does not give a higher conductivity.
5. According to the obtained results, the pure silicon behaves as non-conductive
material to electrical current and has a high value of electrical resistance.

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Investigation of Reliability and Life Time Prediction for Power MOSFET Using
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5. Salman, S. D., Leman, Z., Sultan, M. T., Ishak, M. R., and Cardona, F. (2015). "The
Effects of Orientation on the Mechanical and Morphological Properties of Woven
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6. Salman, S. D., Leman, Z., Sultan, M. T. H., Ishak, M. R., and Cardona, F. (2016).
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Kenaf Reinforced PVB Film Produced Using a Hot Press Technique". International
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