Data Sheet No.

PD 96944A

IRIS-G5653
Features INTEGRATED SWITCHER
• Oscillator is provided on the monolithic control with adopting On-Chip-
Trimming technology. Package Outline
• Small temperature characteristics variation by adopting a comparator to
compensate for temperature on the control part.
• Low start-up circuit current (100uA max)
• Built-in Active Low-Pass Filter for stabilizing the operation in case of light
load
• Avalanche energy guaranteed MOSFET with high VDSS
• The built-in power MOSFET simplifies the surge absorption circuit
since the MOSFET guarantees the avalanche energy.
• No VDSS de-rating is required.
•Indirect feed-back by built-in error amplifier on Vin terminal
TO-220 Fullpack (5 Lead)
• Built-in constant voltage drive circuit
• Built-in step drive circuit Key Specifications
MOSFET RDS(ON) Pout(W)
• Built-in low frequency PRC mode (≒20kHz) Type VDSS(V) MAX AC input(V) Note 1
• Various kinds of protection functions 230±15% 125

• Pulse-by-pulse Overcurrent Protection (OCP) IRIS-G5653 650 1.9Ω 85 to 264 60

Note 1: The Pout (W) represents the thermal rating at Quasi-Resonant
• Overvoltage Protection with latch mode (OVP)
Operation, and the peak power output is obtained by approximately 120
• Thermal Shutdown with latch mode (TSD) to 140% of the above listed. When the output voltage is low and ON-
duty is narrow, the Pout (W) shall become lower than that of above.
Descriptions
IRIS-G5653 is a hybrid IC consists from power MOSFET and a controller IC, designed for Indirect feed-back Quasi-
Resonant (including low frequency PRC) fly-back converter type SMPS (Switching Mode Power Supply) applications.
This IC realizes high efficiency, low noise, downsizing and standardizing of a power supply system reducing external
components count and simplifying the circuit designs.
(Note). PRC is abbreviation of “Pulse Ratio Control” (On-width control with fixed OFF-time).
Typical Connection Diagram

IRIS-G5600

OCP/FB
Vin
GND
S
D

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 IRIS-G5653

Absolute Maximum Ratings (Ta=25ºC)

Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage parameters are
absolute voltages referenced to terminals stated, all currents are defined positive into any lead. The thermal resistance and power
dissipation ratings are measured under board mounted and still air conditions.
Symbol Definition Terminals Max. Ratings Units Note
IDpeak Drain Current *1 1-2 10 A Single Pulse
V2-3=0.78V
IDMAX Maximum switching current *5 1-2 10 A Ta=-20~+125℃
Single Pulse
VDD=99V, L=20mH
EAS Single pulse avalanche energy *2 1-2 80 mJ IL peak=2.6A
Vin Input voltage for control part 4-3 35 V
Vth O.C.P/F.B Pin voltage 5-3 6 V
26 W With infintite heatsink
P D1 Power dissipation for MOSFET *3 1-2 1.5 W Without heatsink
Power dissipation for control part Specified by
P D2 (Control IC) *4 4-3 0.8 W Vin×Iin
Internal frame temperature Refer to recommended
TF in operation - -20 ~ +125 ℃ operating temperature
Top Operating ambient temperature - -20 ~ +125 ℃
Tstg Storage temperature - -40 ~ +125 ℃
Tch Channel temperature - 150 ℃

*1 Refer to MOS FET A.S.O curve

Fig.1
*2 MOS FET Tch-EAS curve
V2-3
*3 Refer to MOS FET Ta-PD1 curve
*4 Refer to TF-PD2 curve for Control IC (See page 5)
*5 Maximum switching current.
The maximum switching current is the Drain current determined by the drive voltage of the IC and
threshold voltage (Vth) of MOS FET. Therefore, in the event that voltage drop occurs between Pin 2 and
Pin 3 due to patterning, the maximum switching current decreases as shown by V2-3 in Fig.1
Accordingly please use this device within the decrease value, referring to the derating
curve of the maximum switching current.

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 IRIS-G5653

Electrical Characteristics (for Control IC)

Electrical characteristics for control part (Ta=25℃, Vin=18V,unless otherwise specified)

Ratings Test
Symbol Definition MIN TYP MAX Units Conditions
Vin(ON) Operation start voltage 14.4 16 17.6 V Vin=0→17.6V
Vin(OFF) Operation stop voltage 9 10 11 V Vin=17.6→9V
Iin(ON) Circuit current in operation - - 20 mA -
Iin(OFF) Circuit current in non-operation - - 100 µA Vin=14V
TOFF(MAX) Maximum OFF time 45 - 55 µsec -
Minimum time for input of quasi
Tth(2) resonant signals *6 - - 1 µsec -
TOFF(MIN) Minimum OFF time *7 - - 2 µsec -
Vth(1) O.C.P/F.B Pin threshold voltage 1 0.68 0.73 0.78 V -
Vth(2) O.C.P/F.B Pin threshold voltage 2 1.3 1.45 1.6 V
IOCP/FB O.C.P/F.B Pin extraction current 1.2 1.35 1.5 mA -
Vin(OVP) O.V.P operation voltage 34 36.5 39 V Vin=0→39.0V
Iin(H) Latch circuit sustaining current *8 - - 400 µA Vin=39.0→8.5V
Vin(La.OFF) Latch circuit release voltage *8 6.6 - 8.4 V Vin=39.0→6.6V
Tj(TSD) Thermal shutdown operating temperature 140 - - ℃ -
Vin(SENSE) Detected Voltage 31.7 32 32.3 V Vin=31.7→32.3V
- Temperature coefficient of detected voltage - 2.5 - mV/℃ Vin=31.7→32.3V

*6 Recommended operating conditions

Tth(2)≧1.0μsec
Time for input of quasi resonant signals
For the quasi resonant signal inputted to OCP/FB Pin ＶO.C.P/F.B
at the time of quasi resonant operation, the signal shall Vth(2)
be wider than Tth(2). 0V
*7 The minimum OFF time means TOFF width at the time when the minimum quasi resonant signal is inputted.
*8 The latch circuit means a circuit operated O.V.P and T.S.D.

Electrical Characteristics (for MOSFET)

(Ta=25℃) unless otherwise specified
Ratings
Symbol Definition MIN TYP MAX Units Test Conditions
ID=300µA
VDSS Drain-to-Source breakdown voltage 650 - - V V3- 2 =0V(short)
VDS =650V
IDSS Drain leakage current - - 300 µA V3-2=0V(short)
V3-2=10V
RDS(ON) On-resistance - - 1.9 Ω ID=1.2A
tf Switching time - - 250 nsec -
Between channel and
θch-F Thermal resistance - - 2 ℃/W internal frame

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IRIS-G5653
IRIS-G5653 MOSFET　A.S.O. Curve Ta=25ºC
A.S.O. temperature derating coefficient curve
Single Pulse
100
100
A.S.O. temperature derating coefficient[%]

80 Drain current 0.1ms

10

Drain Current ID [A]

limit by ON
resistance
1ms

60

1
40

20 0.1 ASO temperature derating

shall be made by obtaining
ASO Coefficient from the left
curve in your use.

0
0 20 40 60 80 100 120 0.01
1 10 100 1000
Internal frame temperature TF [℃] Drain-to-Source Voltage VDS [V]

IRIS-G5653 IRIS-G5653
Maximum Switching current derating curve Avalanche energy derating curve
　　　　　　　　　　　 Ta=‐20～+125℃
12
100

10
Maximum Switchng Current IDMAX[A]

EAS temperature derating coefficient[%]

80

8
60

40
4

20
2

0 0
0.7 0.8 0.9 1.0 1.1 1.2 25 50 75 100 125 150
V2-3 [V] Channel temperature Tch [℃]

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 IRIS-G5653

IRIS-G5653 IRIS-G5653
MOSFET Ta-PD1 Curve MIC TF-PD2 Curve
30 0.9
PD1=26[W] PD2=0.8[W]
0.8
25
0.7
With infinite

Power dissipation P D2[W]

Power dissipation P D1[W]

20 heatsink 0.6

0.5
15
0.4

10 0.3

Without 0.2
5 heatsink
PD1=1.5[W] 0.1

0 0
0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160
Internal frame temperature TF[℃]
Ambient temperature Ta[℃]

IRIS-G5653
Transient thermal resistance curve

10
Transient thermal resistance θch-c[℃/W]

0.1

0.01

0.001
1µ 10µ 100µ 1m 10m 100m
tim e t [sec]

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 IRIS-G5653

Block Diagram
Vin
４

１ D

START O.V.P LATCH DRIVE

REG. ２ S
Vth1
-
+
T.S.D
+
５ O.C.P/F.B
-

ERROR AMP
Ｏ.Ｓ.Ｃ

Vth2
-
+

３ GND

Lead Assignments

Pin No. Symbol Description Function

1 D Drain Pin MOSFET drain
2 S Source Pin MOSFET source
3 GND Ground Pin Ground
4 Vin Power supply Pin Input of power supply for control circuit
IRIS Overcurrent / Feedback Input of overcurrent detection
5 OCP/FB Pin signal / constant voltage control signal

Other Functions
O.V.P. – Overvoltage Protection Circuit
T.S.D. – Thermal Shutdown Circuit
D
S STEP DRV – Step drive circuit
GND
Vin
OCP/FB

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 IRIS-G5653

Case Outline
4.2 ±0.2

φ3.2 ±0.2
4 ±0.2 2.8 ±0.2

7.9 ±0.2

16.9 ±0.3

IRIS
a
b 2.6 ±0.1

2-(R1)
4.1 ±0.5

8.7 ±0.5
0.94 ±0.15 R-end
(4.6)

+0.2
0.85 -0.1

+0.2
0.45 -0.1

4xp1.7±0.1=(6.8) 5.08 ±0.6 a：Type Number G5653

b：Lot Number
10 ±0.2
1st letter：The last digit of year
2nd letter：Month
0.7 0.7 1 to 9 for Jan. to Sept.,
O for Oct. N for Nov. D for Dec.
3rd & 4th letter：Day
Arabic Numerals
5th letter : Registration Symbol
1 2 3 4 5
Weight : Approx. 2.3g
Dimensions in mm
Material of Pin : Cu DWG.No.：TG3A-1128
Treatment of Pin : Ni plating + solder dip

Data and specifications subject to change without notice.

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TAC FAX: (310) 252-7903
Visit us at www.irf.com for sales contact information.

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