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PART NUMBER PACKAGE BRAND
Symbol
C
INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS
NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω.
Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES - 8.1 - V
NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.
150
150 150
PULSE DURATION = 250µs PULSE DURATION = 250µs
TC = -40oC
DUTY CYCLE <0.5%, VGE = 10V DUTY CYCLE <0.5%
125 125 VGE = 15V
TC = 150oC
100 100
TC = -40oC
TC = 25oC
TC = 25oC
75 75
TC = 150oC
50 50
25 25
0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)
FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE
70 25 500
60 450
20 400
50 ISC
350
40
15 300
30
250
20
10 200
tSC
10
150
0 5 100
25 50 75 100 125 150 10 11 12 13 14 15
TC , CASE TEMPERATURE (oC) VGE , GATE TO EMITTER VOLTAGE (V)
FIGURE 5. MAX. DC COLLECTOR CURRENT vs CASE FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
TEMPERATURE
200 500
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
td(OFF)I , TURN-OFF DELAY TIME (ns)
td(ON)I , TURN-ON DELAY TIME (ns)
400
100
VGE = 10V VGE = 15V
300
50
VGE = 10V
40
VGE = 15V 200
30
20
10 100
10 20 30 40 50 60 10 20 30 40 50 60
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT
500 500
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
400
trI , TURN-ON RISE TIME (ns)
VGE = 10V
tfI , FALL TIME (ns)
300
100
VGE = 10V
200
VGE = 15V
VGE = 15V
10 100
10 20 30 40 50 60 10 20 30 40 50 60
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT
8.0 6.0
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
7.0
5.0
6.0
4.0
5.0
VGE = 10V VGE = 10V or 15V
4.0 3.0
3.0
2.0
2.0
1.0
1.0
VGE = 15V
0 0
10 20 30 40 50 60 10 20 30 40 50 60
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)
FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
500 250
TJ = 150oC, VGE = 15V, L = 100µH
TJ = 150oC, TC = 75oC
fMAX , OPERATING FREQUENCY (kHz)
RG = 3Ω, L = 100µH
200
100
FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO FIGURE 14. SWITCHING SAFE OPERATING AREA
EMITTER CURRENT
7000 CIES
6000 480 12
C, CAPACITANCE (pF)
VCE = 600V
5000
360 9
4000
FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER FIGURE 16. GATE CHARGE WAVEFORMS
VOLTAGE
500
10µs
100 100µs
Collector Current, Ic [A]
1ms
10 10ms
DC
1
*Notes:
0.1 o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.01
1 10 100 1000
Collector-Emitter Voltage, VCE [V]
100
0.5
0.2
t1
0.1
10-1 PD
0.05
t2
0.02
0.01
DUTY FACTOR, D = t1 / t2
SINGLE PULSE
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-2
50
100oC
30 ta
10
20 tb
150oC 25oC 10
1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 1 5 10 30
VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A)
Figure 19. DIODE FORWARD CURRENT vs FORWARD Figure 20. RECOVERY TIME vs FORWARD CURRENT
VOLTAGE DROP
L = 100µH
90%
RHRP3060
10%
VGE
EOFF EON
RG = 3Ω VCE
+ 90%
Figure 21. INDUCTIVE SWITCHING TEST CIRCUIT Figure 22. SWITCHING TEST WAVEFORMS