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HGTG30N60C3D

Data Sheet January 2009 File Number 4041.2

63A, 600V, UFS Series N-Channel IGBT Features


with Anti-Parallel Hyperfast Diodes • 63A, 600V at TC = 25oC
The HGTG30N60C3D is a MOS gated high voltage
• Typical Fall Time . . . . . . . . . . . . . . . 230ns at TJ = 150oC
switching device combining the best features of MOSFETs
and bipolar transistors. The device has the high input • Short Circuit Rating
impedance of a MOSFET and the low on-state conduction • Low Conduction Loss
loss of a bipolar transistor. The much lower on-state voltage
drop varies only moderately between 25oC and 150oC. The • Hyperfast Anti-Parallel Diode
IGBT used is the development type TA49051. The diode
used in anti-parallel with the IGBT is the development type
Packaging
TA49053. JEDEC STYLE TO-247

The IGBT is ideal for many high voltage switching applications


E
operating at moderate frequencies where low conduction C
losses are essential. G

Formerly Developmental Type TA49014.

Ordering Information
PART NUMBER PACKAGE BRAND

HGTG30N60C3D TO-247 G30N60C3D


NOTE: When ordering, use the entire part number.

Symbol
C

INTERSIL CORPORATION IGBT PRODUCT IS COVERED BY ONE OR MORE OF THE FOLLOWING U.S. PATENTS

4,364,073 4,417,385 4,430,792 4,443,931 4,466,176 4,516,143 4,532,534 4,587,713


4,598,461 4,605,948 4,620,211 4,631,564 4,639,754 4,639,762 4,641,162 4,644,637
4,682,195 4,684,413 4,694,313 4,717,679 4,743,952 4,783,690 4,794,432 4,801,986
4,803,533 4,809,045 4,809,047 4,810,665 4,823,176 4,837,606 4,860,080 4,883,767
4,888,627 4,890,143 4,901,127 4,904,609 4,933,740 4,963,951 4,969,027

©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B


HGTG30N60C3D

Absolute Maximum Ratings TC = 25oC, Unless Otherwise Specified


HGTG30N60C3D UNITS
Collector to Emitter Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .BVCES 600 V
Collector Current Continuous
At TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC25 63 A
At TC = 110oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . IC110 30 A
Average Diode Forward Current at 110oC. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I(AVG) 25 A
Collector Current Pulsed (Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ICM 252 A
Gate to Emitter Voltage Continuous. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGES ±20 V
Gate to Emitter Voltage Pulsed . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . VGEM ±30 V
Switching Safe Operating Area at TJ = 150oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . SSOA 60A at 600V
Power Dissipation Total at TC = 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . PD 208 W
Power Dissipation Derating TC > 25oC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.67 W/oC
Operating and Storage Junction Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . TJ, TSTG -40 to 150 oC

Maximum Lead Temperature for Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . TL 260 oC

Short Circuit Withstand Time (Note 2) at VGE = 15V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . .tSC 4 µs


Short Circuit Withstand Time (Note 2) at VGE = 10V. . . . . . . . . . . . . . . . . . . . . . . . . . . . . tSC 15 µs
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the
device at these or any other conditions above those indicated in the operational sections of this specification is not implied.

NOTES:
1. Repetitive Rating: Pulse width limited by maximum junction temperature.
2. VCE(PK) = 360V, TJ = 125oC, RG = 25Ω.

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS


Collector to Emitter Breakdown Voltage BVCES IC = 250µA, VGE = 0V 600 - - V

Emitter to Collector Breakdown Voltage BVECS IC = 10mA, VGE = 0V 15 25 - V

Collector to Emitter Leakage Current ICES VCE = BVCES TC = 25oC - - 250 µA


VCE = BVCES TC = 150oC - - 3.0 mA

Collector to Emitter Saturation Voltage VCE(SAT) IC = IC110, TC = 25oC - 1.5 1.8 V


VGE = 15V
TC = 150oC - 1.7 2.0 V
Gate to Emitter Threshold Voltage VGE(TH) IC = 250µA, TC = 25oC 3.0 5.2 6.0 V
VCE = VGE

Gate to Emitter Leakage Current IGES VGE = ±20V - - ±100 nA

Switching SOA SSOA TJ = 150oC, VCE(PK) = 480V 200 - - A


VGE = 15V,
VCE(PK) = 600V 60 - - A
RG = 3Ω,
L = 100µH

Gate to Emitter Plateau Voltage VGEP IC = IC110, VCE = 0.5 BVCES - 8.1 - V

On-State Gate Charge QG(ON) IC = IC110, VGE = 15V - 162 180 nC


VCE = 0.5 BVCES
VGE = 20V - 216 250 nC

Current Turn-On Delay Time td(ON)I TJ = 150oC, - 40 - ns


ICE = IC110,
Current Rise Time trI - 45 - ns
VCE(PK) = 0.8 BVCES,
Current Turn-Off Delay Time td(OFF)I VGE = 15V, - 320 400 ns
RG = 3Ω,
Current Fall Time tfI L = 100µH - 230 275 ns

Turn-On Energy EON - 1050 - µJ

Turn-Off Energy (Note 3) EOFF - 2500 - µJ

Diode Forward Voltage VEC IEC = 30A - 1.75 2.2 V

©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B


HGTG30N60C3D

Electrical Specifications TC = 25oC, Unless Otherwise Specified

PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNITS

Diode Reverse Recovery Time trr IEC = 30A, dIEC/dt = 100A/µs - 52 60 ns

IEC = 1.0A, dIEC/dt = 100A/µs - 42 50 ns

Thermal Resistance RθJC IGBT - - 0.6 oC/W

Diode - - 1.3 oC/W

NOTE:
3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending
at the point where the collector current equals zero (ICE = 0A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for
Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include
diode losses.

Typical Performance Curves

PULSE DURATION = 250µs, DUTY CYCLE <0.5%, TC = 25oC


ICE, COLLECTOR TO EMITTER CURRENT (A)

150

ICE, COLLECTOR TO EMITTER CURRENT (A)


PULSE DURATION = 250µs 150
DUTY CYCLE <0.5%, VCE = 10V 10.0V
VGE = 15.0V 12.0V
125
125
9.5V
100
100
TC = 150oC
75 9.0V
75
TC = 25oC
50 8.5V
TC = -40oC 50
7.0V
25 8.0V
25
7.5V
0
0
4 6 8 10 12 0 2 4 6 8 10
VGE, GATE TO EMITTER VOLTAGE (V) VCE , COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 1. TRANSFER CHARACTERISTICS FIGURE 2. SATURATION CHARACTERISTICS


ICE, COLLECTOR TO EMITTER CURRENT (A)
ICE, COLLECTOR TO EMITTER CURRENT (A)

150 150
PULSE DURATION = 250µs PULSE DURATION = 250µs
TC = -40oC
DUTY CYCLE <0.5%, VGE = 10V DUTY CYCLE <0.5%
125 125 VGE = 15V
TC = 150oC
100 100
TC = -40oC
TC = 25oC
TC = 25oC
75 75
TC = 150oC
50 50

25 25

0 0
0 1 2 3 4 5 0 1 2 3 4 5
VCE, COLLECTOR TO EMITTER VOLTAGE (V) VCE, COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE FIGURE 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE

©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B


HGTG30N60C3D

Typical Performance Curves (Continued)

70 25 500

tSC , SHORT CIRCUIT WITHSTAND TIME (µs)

ISC, PEAK SHORT CIRCUIT CURRENT (A)


VGE = 15V VCE = 360V, RG = 25Ω, TJ = 125oC
ICE , DC COLLECTOR CURRENT (A)

60 450

20 400
50 ISC
350
40
15 300
30
250
20
10 200
tSC
10
150

0 5 100
25 50 75 100 125 150 10 11 12 13 14 15
TC , CASE TEMPERATURE (oC) VGE , GATE TO EMITTER VOLTAGE (V)

FIGURE 5. MAX. DC COLLECTOR CURRENT vs CASE FIGURE 6. SHORT CIRCUIT WITHSTAND TIME
TEMPERATURE

200 500
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
td(OFF)I , TURN-OFF DELAY TIME (ns)
td(ON)I , TURN-ON DELAY TIME (ns)

400
100
VGE = 10V VGE = 15V
300

50
VGE = 10V
40
VGE = 15V 200
30

20

10 100
10 20 30 40 50 60 10 20 30 40 50 60
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 7. TURN-ON DELAY TIME vs COLLECTOR TO FIGURE 8. TURN-OFF DELAY TIME vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT

500 500
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V
400
trI , TURN-ON RISE TIME (ns)

VGE = 10V
tfI , FALL TIME (ns)

300
100
VGE = 10V

200
VGE = 15V
VGE = 15V

10 100
10 20 30 40 50 60 10 20 30 40 50 60
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 9. TURN-ON RISE TIME vs COLLECTOR TO FIGURE 10. TURN-OFF FALL TIME vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT

©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B


HGTG30N60C3D

Typical Performance Curves (Continued)

8.0 6.0
TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V TJ = 150oC, RG = 3Ω, L = 100µH, VCE(PK) = 480V

EOFF, TURN-OFF ENERGY LOSS (mJ)


EON , TURN-ON ENERGY LOSS (mJ)

7.0
5.0
6.0
4.0
5.0
VGE = 10V VGE = 10V or 15V
4.0 3.0

3.0
2.0
2.0
1.0
1.0
VGE = 15V
0 0
10 20 30 40 50 60 10 20 30 40 50 60
ICE , COLLECTOR TO EMITTER CURRENT (A) ICE , COLLECTOR TO EMITTER CURRENT (A)

FIGURE 11. TURN-ON ENERGY LOSS vs COLLECTOR TO FIGURE 12. TURN-OFF ENERGY LOSS vs COLLECTOR TO
EMITTER CURRENT EMITTER CURRENT
ICE, COLLECTOR TO EMITTER CURRENT (A)
500 250
TJ = 150oC, VGE = 15V, L = 100µH
TJ = 150oC, TC = 75oC
fMAX , OPERATING FREQUENCY (kHz)

RG = 3Ω, L = 100µH
200
100

VGE = 15V 150

fMAX1 = 0.05/(tD(OFF)I + tD(ON)I) LIMITED BY


100 CIRCUIT
10 fMAX2 = (PD - PC)/(EON + EOFF)
PD = ALLOWABLE DISSIPATION VGE = 10V
PC = CONDUCTION DISSIPATION 50
(DUTY FACTOR = 50%)
RθJC = 0.6oC/W
1 0
5 10 20 30 40 60 0 100 200 300 400 500 600
ICE, COLLECTOR TO EMITTER CURRENT (A) VCE , COLLECTOR TO EMITTER VOLTAGE (V)

FIGURE 13. OPERATING FREQUENCY vs COLLECTOR TO FIGURE 14. SWITCHING SAFE OPERATING AREA
EMITTER CURRENT

8000 IG (REF) = 3.54mA, RL = 20Ω, TC = 25oC


VCE , COLLECTOR TO EMITTER VOLTAGE (V)

FREQUENCY = 400kHz 600 15


VGE , GATE TO EMITTER VOLTAGE (V)

7000 CIES

6000 480 12
C, CAPACITANCE (pF)

VCE = 600V
5000
360 9
4000

3000 240 VCE = 400V 6

2000 VCE = 200V


COES 120 3
1000
CRES
0 0 0
0 5 10 15 20 25 0 40 80 120 160 200
VCE, COLLECTOR TO EMITTER VOLTAGE (V) QG, GATE CHARGE (nC)

FIGURE 15. CAPACITANCE vs COLLECTOR TO EMITTER FIGURE 16. GATE CHARGE WAVEFORMS
VOLTAGE

©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B


HGTG30N60C3D

Typical Performance Curves (continued)

500
10µs
100 100µs
Collector Current, Ic [A]

1ms

10 10ms

DC
1

*Notes:
0.1 o
1. TC = 25 C
o
2. TJ = 150 C
3. Single Pulse
0.01
1 10 100 1000
Collector-Emitter Voltage, VCE [V]

Figure 17. SOA Characteristics


ZθJC , NORMALIZED THERMAL RESPONSE

100
0.5

0.2
t1
0.1
10-1 PD
0.05
t2
0.02
0.01
DUTY FACTOR, D = t1 / t2
SINGLE PULSE
PEAK TJ = (PD X ZθJC X RθJC) + TC
10-2

10-5 10-4 10-3 10-2 10-1 100 101


t1 , RECTANGULAR PULSE DURATION (s)
Figure 18. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE

©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B


HGTG30N60C3D

Typical Performance Curves (continued)


200 60
TC = 25oC, dIEC/dt = 100A/µs
IEC , FORWARD CURRENT (A)

50

tr, RECOVERY TIMES (ns)


trr
40

100oC
30 ta
10

20 tb

150oC 25oC 10

1
0
0 0.5 1.0 1.5 2.0 2.5 3.0 1 5 10 30
VEC , FORWARD VOLTAGE (V) IEC , FORWARD CURRENT (A)

Figure 19. DIODE FORWARD CURRENT vs FORWARD Figure 20. RECOVERY TIME vs FORWARD CURRENT
VOLTAGE DROP

Test Circuit and Waveforms

L = 100µH
90%

RHRP3060
10%
VGE

EOFF EON
RG = 3Ω VCE

+ 90%

VDD = 480V 10%


- ICE
td(OFF)I trI
tfI
td(ON)I

Figure 21. INDUCTIVE SWITCHING TEST CIRCUIT Figure 22. SWITCHING TEST WAVEFORMS

©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B


HGTG30N60C3D

Handling Precautions for IGBTs Operating Frequency Information


Insulated Gate Bipolar Transistors are susceptible to gate- Operating frequency information for a typical device (Figure 13)
insulation damage by the electrostatic discharge of energy is presented as a guide for estimating device performance
through the devices. When handling these devices, care for a specific application. Other typical frequency vs collector
should be exercised to assure that the static charge built in current (ICE) plots are possible using the information shown
the handler’s body capacitance is not discharged through the for a typical unit in Figures 4, 7, 8, 11 and 12. The operating
device. With proper handling and application procedures, frequency plot (Figure 13) of a typical device shows fMAX1 or
however, IGBTs are currently being extensively used in fMAX2 whichever is smaller at each point. The information is
production by numerous equipment manufacturers in military, based on measurements of a typical device and is bounded
industrial and consumer applications, with virtually no damage by the maximum rated junction temperature.
problems due to electrostatic discharge. IGBTs can be
fMAX1 is defined by fMAX1 = 0.05/(tD(OFF)I + tD(ON)I).
handled safely if the following basic precautions are taken:
Deadtime (the denominator) has been arbitrarily held to 10%
1. Prior to assembly into a circuit, all leads should be kept of the on-state time for a 50% duty factor. Other definitions
shorted together either by the use of metal shorting are possible. tD(OFF)I and tD(ON)I are defined in Figure 21.
springs or by the insertion into conductive material such
as “ECCOSORBD™ LD26” or equivalent. Device turn-off delay can establish an additional frequency
limiting condition for an application other than TJM. tD(OFF)I
2. When devices are removed by hand from their carriers,
the hand being used should be grounded by any suitable is important when controlling output ripple under a lightly
means - for example, with a metallic wristband. loaded condition.
3. Tips of soldering irons should be grounded. fMAX2 is defined by fMAX2 = (PD - PC)/(EOFF + EON). The
4. Devices should never be inserted into or removed from allowable dissipation (PD) is defined by PD = (TJM - TC)/RθJC.
circuits with power on. The sum of device switching and conduction losses must
5. Gate Voltage Rating - Never exceed the gate-voltage not exceed PD . A 50% duty factor was used (Figure 13)
rating of VGEM. Exceeding the rated VGE can result in and the conduction losses (PC) are approximated by
permanent damage to the oxide layer in the gate region. PC = (VCE x ICE)/2.
6. Gate Termination - The gates of these devices are EON and EOFF are defined in the switching waveforms
essentially capacitors. Circuits that leave the gate
shown in Figure 21. EON is the integral of the instantaneous
open-circuited or floating should be avoided. These
power loss (ICE x VCE) during turn-on and EOFF is the
conditions can result in turn-on of the device due to voltage
buildup on the input capacitor due to leakage currents or integral of the instantaneous power loss during turn-off. All
pickup. tail losses are included in the calculation for EOFF; i.e. the
collector current equals zero (ICE = 0).
7. Gate Protection - These devices do not have an internal
monolithic zener diode from gate to emitter. If gate
protection is required an external zener is recommended.

©2009 Fairchild Semiconductor Corporation HGTG30N60C3D Rev. B

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