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IRF2807PbF
HEXFET® Power MOSFET
l Advanced Process Technology
l Ultra Low On-Resistance D
l Dynamic dv/dt Rating VDSS = 75V
l 175°C Operating Temperature
l Fast Switching RDS(on) = 13mΩ
G
l Fully Avalanche Rated
l Lead-Free ID = 82A
S
Description
Advanced HEXFET® Power MOSFETs from International
Rectifier utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.65
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
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07/22/10
IRF2807PbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 75 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.074 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 13 mΩ VGS = 10V, ID = 43A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 38 ––– ––– S VDS = 50V, ID = 43A
––– ––– 25 VDS = 75V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 60V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 160 ID = 43A
Qgs Gate-to-Source Charge ––– ––– 29 nC VDS = 60V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 55 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 13 ––– VDD = 38V
tr Rise Time ––– 64 ––– ID = 43A
ns
td(off) Turn-Off Delay Time ––– 49 ––– RG = 2.5Ω
tf Fall Time ––– 48 ––– VGS = 10V, See Fig. 10
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package G
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 43A, VGS = 0V
trr Reverse Recovery Time ––– 100 150 ns TJ = 25°C, IF = 43A
Qrr Reverse Recovery Charge ––– 410 610 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature. (See fig. 11)
This is a typical value at device destruction and represents
Starting TJ = 25°C, L = 370µH operation outside rated limits.
RG = 25Ω, IAS = 43A, VGS=10V (See Figure 12) This is a calculated value limited to TJ = 175°C .
Calculated continuous current based on maximum allowable
ISD ≤ 43A, di/dt ≤ 300A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C junction temperature. Package limitation current is 75A.
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IRF2807PbF
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTTOM 4.5V BOTTOM 4.5V
100 100
4.5V
4.5V
1000 3.0
ID = 71A
RDS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)
2.5
TJ = 25 ° C
2.0
(Normalized)
TJ = 175 ° C
100 1.5
1.0
0.5
V DS = 25V
20µs PULSE WIDTH VGS = 10V
10 0.0
4.0 5.0 6.0 7.0 8.0 9.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( °C)
20
7000 ID = 43A
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED VDS = 60V
Ciss
12
4000
3000
Coss 8
2000
4
1000
Crss
1000
1000
OPERATION IN THIS AREA
ISD , Reverse Drain Current (A)
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
100
TJ = 175 ° C
100
10 100µsec
TJ = 25 ° C 10 1msec
1
Tc = 25°C
V GS = 0 V Tj = 175°C
0.1 Single Pulse 10msec
0.0 0.4 0.8 1.2 1.6 2.0 2.4 1
VSD ,Source-to-Drain Voltage (V) 1 10 100 1000
VDS , Drain-toSource Voltage (V)
100
RD
LIMITED BY PACKAGE VDS
VGS
80 D.U.T.
RG
ID , Drain Current (A)
+
-VDD
60
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
40
1
Thermal Response (Z thJC )
D = 0.50
0.20
0.1
0.10
PDM
0.05
t1
SINGLE PULSE
0.02 (THERMAL RESPONSE) t2
0.01
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.01
0.00001 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
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IRF2807PbF
600
ID
400
RG D.U.T +
V
- DD
IAS A 300
VGS
20V
tp 0.01Ω
200
Fig 12a. Unclamped Inductive Test Circuit
100
V(BR)DSS
tp
0
25 50 75 100 125 150 175
Starting TJ , Junction Temperature ( °C)
50KΩ
12V .2µF
QG .3µF
VGS +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
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IRF2807PbF
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% [ISD ]
Notes:
1. For an Automotive Qualified version of this part please seehttp://www.irf.com/product-info/auto/
2. For the most current drawing please refer to IR website at http://www.irf.com/package/
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 07/2010
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