MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.

0mΩ
MDD1752
N-Channel Trench MOSFET 40V, 50A, 8.0mΩ

General Description Features

The MDD1752 uses advanced MagnaChip’s trench  VDS = 40V
MOSFET Technology to provide high performance in on-  ID = 50A @VGS = 10V
state resistance, switching performance and reliability  RDS(ON)
< 8.0mΩ @ VGS = 10V
Low RDS(ON), low gate charge can be offering superior < 10.5mΩ @ VGS = 4.5V
benefit in the application.

Applications
 Inverters
 General purpose applications

Absolute Maximum Ratings (TC =25oC unless otherwise noted)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 40 V
Gate-Source Voltage VGSS ±20 V
o
TC=25 C (a) 50 A
Continuous Drain Current (Note 2) o
ID
TA=25 C (b) 15.2 A
Pulsed Drain Current IDM 100 A
o
TC=25 C 45
Power Dissipation for Single Operation o
PD W
TA=25 C 3.1
Single Pulse Avalanche Energy (Note 3) EAS 153 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~+150 C

Thermal Characteristics

Characteristics Symbol Rating Unit

Thermal Resistance, Junction-to-Ambient (Note 1) RθJA 40 o
C/W
Thermal Resistance, Junction-to-Case RθJC 2.8

Jun. 2015. Version 1.3 1 MagnaChip Semiconductor Ltd.

 MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
Ordering Information

Part Number Temp. Range Package Packing RoHS Status

MDD1752RH -55~150oC TO-252 Tape & Reel Halogen Free

Electrical Characteristics (TJ =25oC unless otherwise noted)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250μA, VGS = 0V 40 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250μA 1.0 1.7 3.0
Zero Gate Voltage Drain Current IDSS VDS = 32V, VGS = 0V - - 1
μA
Gate Leakage Current IGSS VGS = ±20V, VDS = 0V - - 0.1
VGS = 10V, ID = 14A - 6.1 8.0
Drain-Source ON Resistance RDS(ON) mΩ
VGS = 4.5V, ID = 11A - 8.2 10.5
Forward Transconductance gFS VDS = 5V, ID = 14A - 58 - S
Dynamic Characteristics
Total Gate Charge Qg - 26.4 -
Gate-Source Charge Qgs VDS = 20V, ID = 14A, VGS = 10V - 3.6 - nC
Gate-Drain Charge Qgd - 6.8 -
Input Capacitance Ciss - 1480 -
Reverse Transfer Capacitance Crss VDS = 20V, VGS = 0V, f = 1.0MHz - 113 - pF
Output Capacitance Coss - 243 -
Turn-On Delay Time td(on) - 9 -
Turn-On Rise Time tr VGS = 10V ,VDS = 20V, ID = 1A , - 21 -
ns
Turn-Off Delay Time td(off) RGEN = 6Ω - 31 -
Turn-Off Fall Time tf - 18 -
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 14A, VGS = 0V - 0.8 1.2 V
Body Diode Reverse Recovery Time trr - 26 - ns
IF = 14A, di/dt = 100A/μs
Body Diode Reverse Recovery Charge Qrr - 11 - nC

Note :

1. Surface mounted RF4 board with 2oz. Copper.

2. PD is based on TJ(MAX)=150°C
a. PD (TC=25°C) is based on RθJC,
b. PD (TA=25°C) is based on RθJA
3. Starting TJ=25°C, L=1mH, IAS=17.5A, VDD=40V, VGS=10V

Jun. 2015. Version 1.3 2 MagnaChip Semiconductor Ltd.

 MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
100 3.0
4.0V
4.5V 2.8 VGS = 3V
VGS = 10V
2.6
80

Drain-Source On-Resistance
5.0V 2.4 3.5V
ID, Drain Current [A]

6.0V
2.2
60

Normalized
2.0 4.0V
3.5V
1.8

40 1.6
5.0V 6.0V
1.4
4.5V
1.2
20
10V
3.0V 1.0

0.8
0
0.0 0.5 1.0 1.5 2.0 2.5 0.6
0 20 40 60 80 100
VDS, Drain-Source Voltage [V] ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.6 20.0

※ Notes :
1. VGS = 10 V
17.5
2. ID = 14 A
Drain-Source On-Resistance
Drain-Source On-Resistance

1.4
RDS(ON), (Normalized)

15.0
RDS(ON) [mΩ ],

1.2
TA = 125℃
12.5

1.0
10.0

TA = 25℃
0.8
7.5

0.6 5.0
-50 -25 0 25 50 75 100 125 150 2 4 6 8 10
o
TJ, Junction Temperature [ C] VGS, Gate to Source Volatge [V]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

3
100 10
※ Notes :
※ Notes :
VGS = 0V
VDS = 5V 2
10
IDR, Reverse Drain Current [A]

80
ID, Drain Current [A]

1
10

60 0
10
TA=125℃
-1
10
40
25℃ TA=125℃
25℃
-55℃ 10
-2
-55℃
20
-3
10

-4
10
1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0.2 0.4 0.6 0.8 1.0 1.2
VGS, Gate-Source Voltage [V] VSD, Source-Drain voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

Jun. 2015. Version 1.3 3 MagnaChip Semiconductor Ltd.

 MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
10 2.0n
Ciss = Cgs + Cgd (Cds = shorted)
※ Note : ID = 14A Coss = Cds + Cgd
Crss = Cgd
8 1.6n
Ciss
VGS, Gate-Source Voltage [V]

10V

Capacitance [F]
6 VDS = 20V 1.2n
30V

4 800.0p ※ Notes ;
1. VGS = 0 V
2. f = 1 MHz

2 400.0p Coss

Crss

0 0.0
0 10 20 30 40 0 10 20 30 40
QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

10
3 100
Operation in This Area
is Limited by R DS(on)
I(AS), AVALANCHE CURRENT (A)

2
10
TJ=25℃
100 s
ID, Drain Current [A]

10
1 1 ms
10 ms
10
100 ms
0
1s
10 DC

-1
10 Single Pulse
RthJA=96℃/W
TA=25℃

-2
10 1
10
-1
10
0
10
1
10
2 0.1 1 10

VDS, Drain-Source Voltage [V] tAV, TIME IN AVALANCHE (ms)

Fig.9 Maximum Safe Operating Area Fig.10 Unclamped Inductive Switching

Capability

0
70 10

D=0.5
60
Zθ JA(t), Thermal Response

0.2
50
ID, Drain Current [A]

-1
10 0.1

40 0.05 ※ Notes :
Duty Factor, D=t 1/t2
0.02 PEAK TJ = PDM * Zθ JA* Rθ JA(t) + TA
30 RΘ JA=96℃/W

-2
single pulse
10
20
0.01

10

-3
0 10
25 50 75 100 125 150 10
-4
10
-3
10
-2
10
-1 0
10
1
10 10
2
10
3

TC, Case Temperature [℃] t1, Rectangular Pulse Duration [sec]

Fig.11 Maximum Drain Current vs. Case Fig.12 Transient Thermal Response Curve
Temperature

Jun. 2015. Version 1.3 4 MagnaChip Semiconductor Ltd.

 MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
100 50

Single Pulse Single Pulse

RΘ JA=96℃/W RΘ JA=96℃/W
P(pk), Peak Transient Power [W]

I(pk), Peak Transient Current [A]

80 40
TA=25℃ TA=25℃

60 30

40 20

20 10

0 0
1E-3 0.01 0.1 1 10 100 1000 1E-3 0.01 0.1 1 10 100 1000
T1, Time [sec] T1, Time [sec]

Fig13. Single Pulse Maximum Power Fig14. Single Pulse Maximum Peak Current
Dissipation

Jun. 2015. Version 1.3 5 MagnaChip Semiconductor Ltd.

 MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ
Physical Dimensions

D-PAK, 3L
Dimensions are in millimeters, unless otherwise specified

Worldwide Sales Support Locations

Jun. 2015. Version 1.3 6 MagnaChip Semiconductor Ltd.

 MDD1752– N-Channel Trench MOSFET 40V, 50A, 8.0mΩ

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Jun. 2015. Version 1.3 7 MagnaChip Semiconductor Ltd.