Explanation of ISRO Electronics Engg.

Paper (December-2017)
SET - C
1. If the transformer and diodes in the following (a) Doppler frequency shift of radar A will be
circuit are ideal, Find out the value of Capacitor one-fourth of doppler frequency shift of

R
(Co) provides 5% ripple voltage across RL. radar B

(Assume that sin–1(0.95) ~ 2/5 in radians (b) Doppler frequency shift of radar A will be
ln(0.95) = –0.051) one-half of doppler frequency shift of

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radar B
(c) Doppler frequency shift of radar A will be
RL = 1K

Vin = 100sin Co double of doppler frequency shift of

(2 × 1000 × t) radar B
NS1=5
Np=10 (d) Doppler frequency shifts of radar A and
AS
NS2=5 radar B will be same
Ans. (a)
(a) 4.7 F (b) 16.7 F Sol. Doppler shift for Radar A

2v A 2  1000 2  104
(c) 8.7 F (d) 2.7 F fD,A =  
A 0.1 
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Ans. (c) Doppler shift for Radar B,

Sol. For FWR with C-filter
2vB 2  2000 8  104
f D,B =  
Vmax B 0.05 
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 =
2f  RL therefore, Doppler shift of Radar A will be one-
fourth of Doppler shift of radar B.
Given,  = 2.5, Vmax = 50 V
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3. A sinusoidal input which can be reproduced in

f = 1000 Hz an OP-AMP without any distortion having slew
rate of 10 V / s and 5V peak output
RL = 1000 
amplitude, has the maximum frequency of.

50 (a) 1 kHz (b) 1 MHz

 C=  10 F
2  100  2.5  1000 (c) 31.42 kHz (d) 31.42 MHz

2. Relationship between doppler frequency shifts Ans. (b)

of two radars A and B having 0.1 foot and dVout
0.05 foot wavelengths, approaching the target Sol. Slew rate =
dt max
at 1000 feet per second and 2000 feet per
second rate respectively, will be If output signal is equal to, V = A sin 2fm t
 d(V0 ) 1
SR =  Variation of m or, with temperature
dt max = A2fm m
T:
But it is given that SRmax = 10V / µ sec (1/m)
m
6
= 10   10 V / sec or

R
1/m
10  106
 fm = = 106 Hz = 1 MHz
5  2 m

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4. Which of the following is NOT a characteristic
of Schottky Diode ? 0 TN Temp. T
(a) Thermoinic emission of carriers across
 From above characteristic it is clear that
Schottky barrier
with increase in temperature, m
(b) Current conduction in Schottky diodes is increases first, reaches maximum at Neel
AS
by majority carriers. temperature T N and then starts
(c) Switching speed of Schottky diodes is less decreasing.
compared to p-n junction diodes.  Below Neel temperature T N, material
(d) Schottky diode comprises of Metal- behaves as antiferromagnetic and above
Semiconductor junction it behaves as paramagnetic.
Ans. (c) 6. In metals, the thermal conductivity K and
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Sol. Schottky diode is made by metal. K

electrical conductivity  are related as  L.
Semiconductor thats why there is no minority T
charge carrier storage or a very less amount L is known as
of the minority charge carrier storage. This (a) Lattice constant (b) Lorenz number
makes the device fast in respect of switching
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(c) Lanevin function (d) Larmor number

speed. That’s why switching speed of Schottky
Ans. (b)
diode is much higher than normal p-n junction
diode. Sol.  Metals are good conductor of electricity
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and having good thermal conductivity due

5. The temperature below which certain materials
to large number of free electrons.
are antiferromagnetic and above which they
are paramagnetic is called  Weidemann–Franz law describes the
relations between electrical conductivity
(a) Weiss temperature
and thermal conductivity in metal as,
(b) Curie temperature
K
(c) Neel temperature L
T
(d) None of the above
where, K is thermal conductivity of metal
Ans. (c)
 is electrical doncutivity of metal
Sol. Antiferromagnetic Materials :
T is temperature, and
 Net magnetic moment is zero.
L is constant, called Lorentz Number
 Magnetic susceptibility (m ) is small and
positive. L  2.443  10 8 W - /K 2
7. In a specimen of ferromagnetic material with (a) Capable of a larger duty cycle
saturation magnetization as 8000 Gauss, as (b) A more efficient amplifier
the flux density is increased from 0 to 2.5 T,
(c) More broadband
r will
(d) Less noisy
(a) Increase
Ans. (a)
(b) Decrease
10. One of the reason why conventional vacuum
(c) First decrease then increase

R
valve tubes not used at microwave frequencies
(d) First increase then decrease is that their.
Ans. (d) (a) Noise increase
Sol. A typical magnetisation curve of a
ferromagnetic material is given as,

B
Rotation of
magnetisation

Irreversible
TE (b)
(c)

(d)
It has less transit time
Shunt capacitive reactance become too
large
Series induction reactance become too
small
AS
domain
wall motion
Ans. (a)
Reversible domain wall motion Sol. As frequency increases, vacuum tubes suffer
0 from two general kind of problem. The 1st is

concerned with inter electrode capacitances
Since, B = 0 rH and inductances, and the second is caused
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by the finite time that electrons take to travel

B
 r  from one electrode to another in a tube. Noise
0 H
tends to increase with frequency.
i.e., slope of the B-H curve indicates the
11. Y-parameter of a two port network is shown
variation of relative permeability r of material. below. A 1 resistor is connected to the
S

Hence, from the above curve, we can say that network as shown. Find out the Y parameter
r of ferromagnetic material first increases and of the whole network.
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1
then decreases.
8. The cavity magnetron uses strapping to
1 2
(a) Prevent mode jumping
5 2
(b) Prevent cathode back-heating 1 3
1 2
(c) Ensure bunching
(d) Improve the phase focussing effect
6 1 6 3
Ans. (a) (a)   (b)  
0 4  2 4
9. The TW T is sometimes preferred to the
magnetron as a radar transmitter output tube  4 1 3 1
because it is (c)   (d)  
0 2  1 2
Ans. (a) 12. For the circuit shown below, Z1 = K1 × (s + 2)/
Sol. (s + 5). Find Z2, where K1 and K2 are constants
containing circuit element values.
1

I1
R2

R
1 2
I1 I1 5 2 R1 Ls
1 3
1 2 Z1 Z2

TE
1 (a) K2 × s/(s + 5)
I1 I2 (b) (s + 5)/(s × K2)
V1 V2 (c) K2 × s/(s + 6)
(d) (s + 6)/(s × K2)
AS
Ans. (a)

Sol.
Y 12
R2

Y22 + Y12 R1 Ls
Y11 + Y12
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Z1 Z2
 y12 = y21 = –1 z1 = (R2 + Ls) || R1

y11 + y12 = 0 y22 + y12 = 0  R 

R1L  s  2 
S

R1(R2  Ls)  L 
y11 = 1 y22 = 1 = =
R1  R2  Ls  R  R2 
 y-parameters of L s  1 
 L 
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 R 
R1  s  2 
 L 
= R  R2
s 1
L
(s  2)
 1 1 Given, z1 = K1
=   (s  5)
 1 1 
R2
5 2  1 1  =2 ...(i)
Overall y-parameter =    L
 1 3   1 1  and, K1 = R1
6 1 R1  R2
=   =5
0 4  L
 R1 (b) Mag.
=5–2=3 ...(ii)
L
z2 = (R1 + R2) || sL T
time
T/2
(R1  R2 )sL
= R  R  sL
1 2

R
s(R1  R2 ) s(R1  R2 ) (c) Mag.
= =
R  R2 s5
s 1
L
+T/2

TE
time
Ks –T/2
=
s5
13. The R = 1/3 convolution encoder defined by
transfer functions (d)
Mag.
H1(z) = 1 + z–1
AS
H2(z) = 1 + z–2
time
H3(z) = 1 + z–1 + z–2 is T/2

(a) Recursive and K = 3

(b) Systematic and K = 2 Ans. (b)
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(c) Non-recursive and K = 3

Sol.
(d) Non-recursive and K = 2 t=T
Ans. (c) h(t) S0(T)
S(t) S0(t)
S

14. The match filter response for given signal Matched filter
sampled at t = T is h(t) = s(T – t)
Mag.
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S(t)

time
T/2 T
0 t
T T
2
(a) Mag.

T/2
time
T
 S(t + T) Where V is valid bit indicator, it is set 1 where
one or more inputs are equal to 1.

A = I3 I2 I1  I3
t
–T T B = I3 I2  I3
 0

R
2
Expression of B is not written correctly in ques-
tion

TE
S(T – t) 16.

Z
t C
T T
0
2
AS
B

The output Z =
15. Consider the output A and B with I0, I2, I2 and
I3 as input (a) AC AB (b) ABC
A  I3 I2 I1  I3
(c) ABC + ACB (d) ABC + CB
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B  I 3 I1  I3
Ans. (b)
The above circuit is
Sol.
(a) 4:1 Multiplexer (b) De-Multiplexer
(c) BCD circuit (d) Priority Encoder A Y3
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Ans. (d) Y1
Z
C
Sol.
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I0
B
I1 B Y2

I2 A
I3 Z = Y3 + Y2
4 to 2 priority encoder Y3 = ABY1

I3 I2 I1 I0 B A V
0 0 0 0   0
 
Y3 = AB AC = AB(A  C) = ABC

0 0 0 1 0 0 1 Y2 = ABC
0 0 1  0 1 1 Z = Y3 + Y2 = ABC + ABC
0 1   1 0 1 Z = ABC
1    1 1 1
17. Consider the shift register 18. An air filled rectangular waveguide R 1 is
A B operating at the frequency 2 GHz and another
x air filled rectangular waveguide R2 is operating
at 4 GHz. The guide wavelengths of these
waveguides at their respective frequencies are
2fs equal. If the cut-off frequency of waveguide R1
The frequency of signal x is fs and the shift is 1 GHz, what is the cut-off frequency of the
waveguide R2 in GHz ?

R
register is clocked at the positive edge of 2fs.
The time offset between A and B is (a) 10 (b) 11
(a) 1/(2fs) (b) 1/fs (c) (d)
12 13
(c)
Ans. (b)
Sol.
3/(2fs)

A
(d) 1/(4fs)

Z B
TE Ans. (d)
Sol. Waveguide R1

f 1 = 24 Hz 1 
C 3  108

f1 2  10 9

3
20
 0.15
AS
1
Guided wavelength  g1  2
2fs
 fc 
1  1 
 f1 
Ts
2
Waveguide R2,  g2 
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2
 fc 
1  2 
 f2 
Ts/2
C 3  108
f 2 = 4 GHz 2    0.075
f2 4  109
S

fc1  1 GHz fc2  ?

CLK A Z B  g1  g2
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0 0 0 0
1 2
 Ts  
1 1 0 0 2 2
   fc   fc 
 2 1  1  1  2 
 Ts   f1   f2 
  2 0 1 0
 2 0.15 0.075

 Ts  2 2
  3 1 0 1  1  fc 
 2 1   1  2 
 2  4 
Data reaches to A after Ts/2
Same data reaches to B after 3Ts/2 0.15  2 0.075

3 2
3Ts Ts 1  fc 
Offset time = 2  2  Ts  f 1  2 
s  4 
 2
 fc  0.075  3  r r  4 …(i)
1  2    0.43
 4  0.15  2 Intrinsic impedance
2
 fc  r
1   2   0.1875  = 120
 4  r

R
2
 fc 2  r
   0.8125 90  120
 4  r

TE
fc 2
 0.9013 3 r
4 
4 r
fc 2  3.6 GHz
r 9
 …(ii)
or r 16
AS
2
fc 2 From (i) and (ii)
 0.8125
16 36
2
r 
fc22  13 16

r  1.5
fc 2  13 GHz
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4
19. An electromagnetic wave propagates through 2r   16
9
a lossless insulator with a velocity 1.5 × 1010
cm/s. Calculate the electric and magnetic r  2.66
properties of the insulator if its intrinsic
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impedance is 90 ohm.s 20. A square waveguide carries TE11 mode whose
axial magnetic f ield is giv en by
(a) r  2.66 r  1.5
 x   y 
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H0  cos    cos   A/m, where

(b) r 1.5 r  2.66  8   8
waveguide dimensions are in cm. What is the
(c) r  1.2 r  2.0
cut-off frequency of the mode ?
(d) r  2.0 r  1.2
(a) 5.5 GHz (b) 6.5 GHz
Ans. (a) (c) 7.5 GHz (d) 8.5 GHz
Sol. Velocity in lossless insulator Ans. (c)
C Sol. Cutoff frequency of TE11 mode :
v =
r r
2 2
v m n
3  10 8 fc =    
 1.5  10
8 2  a  b
r r
v 1 1
fc = 2
 2
r r  2 2 a b
 Sol.
v a2
fc = 1  2 VCC = 5V
2a b 10K
3K
( x) ( y) A Vt Ouput
Hx = H0 cos cos C1
8 8 m A1 Q1
3.3K
Comparing with, 2.5V dc 5V dc 100K 1nF
 m x)   ny 

R
Hx = H0 cos   cos  
 a   b  Applying, KCL of inverting node,
 x)   y  Vn Vn  VCC Vn  V0
Hx = H0 cos   cos     0

TE
 a   b  3.3 3 10

a= 8 cm From virtual ground concept,

Vn = VP = 2.5 V
b= 8 cm
2.5 2.5  5 2.5  V0
   0
3  108 3.3 3 10
AS
fc = 1 1
2 8  102  V0  1.75 V
3 8 2 Now, gate voltage of N-channel MOSFET,
fc =  10  10
22
VG = 5 1  e  t/  
fc  7.5 GHz
where,  = RC = charging time constant
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21. The ramp signal (Vt:0 to 5V) is compared with = 100 × 103 × 10–9
the Soft-Start Signal provided by N-channel
= 100  sec
MOSFET (Q1) for Amplifier (A1) output. If Q1
having low threshold voltage of 0.7 V and N-channel MOSFET will conduct when VG >
S

negligible ON resistance. What is the duty of Vt = 0.7 V

output signal of comparator (C 1 ) after
i.e. 0.7 = 5 1  e 
 t/ 
100  Sec?
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 t = 15  sec
VCC = 5V
10K i.e. of after t = 15  sec MOSFET will be ON,
3K
Vt Ouput and comparator will give +ve logic before t =
C1
A1 Q1 15  sec , comparator will give –ve logic
3.3K
2.5V dc because, Vt  V0  1.75 V
5V dc 100K 1nF
after t = 100+  sec = T Non inverting terminal
(a) 17.4% (b) 34.8% voltage = 1.75 V > inverting terminal voltage,
so comparator will give +ve logic, and
(c) 0% (d) 50% comparator will give –ve logic when inverting
Ans. (b) terminal voltage will be greater than 1.75 V.
 Equation of ramp Ans. (a)
5 Sol. V0/P = V1 + V2 + V3  V0/P = 4V
Vt = t , where, T = 100  sec
T V1 : V2 : V3 = 1 : 2 : 1
if, Vt = 1.75 V
If V1 = V, V2 = 2V V3 = V
1.75  100
 35  sec V2 V3

R
t =
5 V1  
V1  V2  V3 2 3
i.e. after t = 135  sec , comparator will give – Vin = 
1 1
ve logic, upto t = 200  sec

TE
2V V  2 1 
V  V 1   
TON 2 3  2  3 
+ V sat = =
1 1
t V0/P 41
4V
– Vsat   = V   2 1

 1 2  1
in
AS
V 1  
T
200 sec  2 3  2 3
100 sec
135 sec 1
TON 135  100 412 3
 Duty cycle =   35% =    2  
T 100 2 3 3 2
22. A high speed digital Subsystem requires three 23. For the silicon transistor shown in the figure
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voltages V1, V2 and V3 with 1:2:1 power ratings below, the value of IB is?
respectively. The power supply is designed with
VEE= –8V
the distribute power conversion scheme as
shown in the following figure. What is the
RE=2.4 k
overall power conversion efficiency?
S

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Primary V1
Vin Converter RB=1.9 k
(Efficiency=1)
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Secondary V2  = 100
Converter Digital VCC=10 V
(Efficiency=2) Systems (a) 26.47 A (b) 52.94 A
Secondary V3 (c) 13.235 A (d) 30.11 A
Converter
(Efficiency=2)
Ans. (d)
4  1  2  3 Sol. Applying KVL in base emitter loop.
(a) 23  2  3  2
8 = VBE + 2.4IE
1  2  3
(b) 7.3
23  2  3  2  IE = mA
2.4
4  1  2  3 IE
(c) 2 3  2  3  IB =
1 
2  1  2  3 7.3
(d) 2 3  2  3 IB = = 30.11 µA.
2.4  101
24. Which one of the following statement is not Autocorrelation function and energy spectral
true for static random access memory (SRAM) density form a Fourier transform pair.
(a) Static RAM stores data in the form of R xx ()  R xx ()
charge
Autocorrelation function of a real valued energy
(b) They have low capacity, but offer high signal is a real valued even function.
speed
Rxx(0) = E(x2(t)) = Average power of signal x(t)
(c) It doesn’t require periodic refreshing

R
26. The Eddy current loss is proportional to the
(d) They are made up of six CMOS transistor
(a) Frequency
Ans. (a)
(b) Square of the frequency
Sol. 



Static Ram vs Dynamic Ram

of data, DRAM uses separate capacitor to

store each bit of data.
SRAM does not need periodic refreshment
TE
SPAM uses transistor to store a single bit

27.
(c)
(d)
Ans. (b)
Cube of the frequency
Square root of the frequency

In the following circuit, find the output voltage

AS
to maintain data, but DRAM needs. V0

 SRAM are used in cache memory, DRAM Iin

are used in main memory.
Rs
SRAM are faster than DRAM. RA

V0
Thus statement given in option (b), (c) and
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
(d) are correct about SRAM. RB

25. Which of the following statement is not true

(a) (RA/RB) × Iin × Rs
(a) Autocorrelation function and energy
spectral density forms a Fourier transform (b) (Iin × Rs × (1 + RA/RB)
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pair (c) (RB/RA) × Iin × Rs

(b) Autocorrelation function of a real valued (d) Iin × Rs × (1 + RB/RA)
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energy signal is a real valued odd function

Ans. (b)
(c) The value of autocorrelation function of a
Sol.
power signal at the origin is equal to the
average power of the signal Iin Vp
Vn
(d) Autocorrelation function is the inverse
Fourier transform of power spectral Rs RA
V0
density
Ans. (b) RB
Sol. Properties of autocorrelation function
F.T.
R xx ()   S xx (f ) RB
Vn = VD
R A  RB
 From virtual ground concept, 29. Consider the system with x(t) as input and y(t)
as output. The f requency domain
RB characteristics are shown in the figure. Which
Vn = Vp = V0
R A  RB combination of A and B will give y as result?
Applying KVL at non inverting node,

R
VP RB VD
Iin = R = R  R  R
S A B S
–fc fc

TE
 RA  RB   RA 
 VD =  R  IinRS =  1   IinRS x(t)
 B   RB 
x(t)
A B
28. From the following Relative amplitude vs
Frequency plot, identify the type of noise which
j
the sections A, B, C and D depict.
AS
Mag.
y
6
10
Freq.
B
Amplitude

A
Relative

C Mag. Mag.
M

1
10 D
j

(a) A=
Freq.
B =
Freq.
–2 –1 0 1 2 3 4 5 6 –fc
10 10 10 10 10 10 10 10 10 –j
Frequency (Hz)
S

Mag. Mag.
i. Thermal Noise
j
ii. Power line pick up
(b) A= B =
iii. Power supply (EPC) switching noise Freq.
IE

Freq.

iv. I/f noise

(a) A-i, B-ii, C-iii, D-iv Mag.
Mag.
(b) A-ii, B-i, C-iv, D-iii j

(c) A-iv, B-ii, C-iii, D-i Freq.

(c) A= B =
–fc fc
Freq.
(d) A-iii, B-iv, C-ii, D-i
Ans. (c)
Mag. Mag.
Sol. Region A  Low frequency region i.e. known
as 1/f noise or flicker noise.
Region B  Power line pick up –fc
(d) A= B =
Freq.
Freq.
Region C  Power supply –j
Region D  Thermal noise
Ans. (a) Output (x2(t)) : X2(f)
Sol.
1

x(t) –fc
f
A B y(t) fc
x1(t) x2(t)
–1

R
j
X(f)
x(t)
(x2(t)) +x(t)  X2(f) + x(f)

–fc

Y(f)
fc
f
TE 1

0 fc
f
AS
Output
y(t)
f Spectrum of B
0
M

f
Steps : (i) Remove negative frequency spectrum. –fc
(ii) Shift positive frequency spectrum f c Output (y(t)) : Y(f)
times leftward.
X(f)
S

f
IE

f
–fc fc

Mag 30. The electric field of a linearly polarized

electromagnetic wav e is giv en by
j Ei  aˆ xE0  x,y  e jkz is incident upon a linearly
polarized antenna whose electric f ield
f polarization is expressed as

Ea   aˆ x  aˆ y  E  r, ,  .
–j
Find the polarization loss factor.
 (a) 1/2 (b) 3/2 Sol.
(c) 2/3 (d) 1/4 P2–
Ans. (a) +
Port 2
P1
Sol. Z02
Z01

R
 jkz
Ei  aˆ xE0e Port 1

Z03

TE
Port 3
–
P
3

Ea  (aˆ x  aˆ y ) E(r, , )
Port (2) and port (3) are terminated into
matched loads.
AS
Linearly Z02 Z03
polarized Z01 = Z  Z
02 03
antenna
Polarisation Loss Factor: Z02
+
P1
  2
Einci  ETrans
PLF =  2  2
M

Einci ETrans Port 1 Z01

2
aˆ x  (aˆ x  aˆ y )
PLF = 2 2 Z03
aˆ x aˆ x  aˆ y
S

Since divider is lossless :

1
PLF 
2 P1 = P2  P3
IE

31. A lossless T-junction two way power divider

P2 Z03 2
has a source impedance, input transmission Division ratio :  =  
P3 Z02 1
line impedance and output port load impedance
of 50 . Find the output characterization  1
Z02 = Z01  1  
impedances so that the input power is divided  
in a 2:1 ratio.
Z03 = Z01 1  
(a) z1  150 , z2  75 
 1 3
(b) z1  50 , z2  100  Z02 = 50  1    50   75 
 2 2
(c) z1  60 , z2  120 
Z03 = 50 1  2   150 
(d) z1  30 , z2  60 
Ans. (a)
32. Following circuit implements a Sol.
A0
32 bit 32 bit register
Y M X Y (32 bit)
I0
F
A1

R
(a) De-Multiplexer (b) Multiplexer M is input 32 bit
(c) Y = I0 (A0 + A1) (d) Y  I0  A1  A 0  F is synchronized frequency for Ex OR and
register

TE
Ans. (b)
Sol. If M is initially cleared then frequency of Y is
F/232
A0 A0 I0
MF
Y M is having some value then .
232
AS
I0
34. A gain-standard horn is known to have a gain
A1 A1 I0 G = 10. It is being used to measure the gain
of a large directional antenna by the
Y = A 0I0  A1 I 0 comparison method. When the antenna being
measured is connected to the receiver it is
I0 Y
M

found to be necessary to insert an attenuator

0 A1 adjust to attenuate by 23 dB in order to have
1 A0 the same receiver output that was observed
with the horn connected. What is the gain of
A1 0 the large antenna ?
2×1
S

Y
MUX (a) 13 db (b) 23 db
A0 1
I0 (c) 33 dB (d) 230 dB
IE

Ans. (c)
33. The frequency of the output Y is Sol. Let gain of unknown antenna = G1(dB)
Gain of horn antenna, G = 10 = 10 dB
M 32 32
X Y Let receiver loss = L
32
F F Output of the receiver when horn is used is equal
MF 2MF output of unknown gain antenna is used plus
(a) (b) loss of alternator.
232 232
F 232 F  L(receiver) + G = L + G1 – 23 (alternator)
(c) 32 (d)
2 M  G1 = 33 dB
Ans. (a)
35. A paraboloidal-reflector antenna is designed Ans. (c)
for operation at 3 GHz. Its largest aperture
Sol. Rrad = 12 
dimension is 20 feet. It is desired to build a
scale model of this antenna with the largest Rloss = 8 
apeture dimension scaled to 18 inches. At what
frequency must this model be operated in order GP (, ) = 16

R
to have the same pattern as the full-size Directive gain × r = Power gain
antenna ?
(a) 10 GHz (b) 20 GHz GP (, )  r  Gd (, )

TE
(c) 40 GHz (d) 4 GHz r = Radiation efficiency
Ans. (c) GP (, )
Gd (, ) =
2 2 r
D  D 
Sol. 6 1  6 2  Rrad 72 72 9
 1   2 
AS
r =   
Rrad  Rloss 72  8 80 10
D1 D2
 16  10 160
1 2 Gd (, ) = 
9 9
D2 1
2  160
D1 Directivity = Gd ( , ) max   17.8
9
M

18  1 37. The current density at the surface of a thick

2 =
20  12 metal plate is 100 A/m2. What is the skin depth
C C if the current density at a depth of 0.0059 cm
2 = f 1  is 0.272 A/m2?
2 f1
S

C 18 C ln 10   2.3 

   
f2 240 f1  ln  2.72   1
IE

240f1 (a) 5 m (b) 10 m

f2 =
18
(c) 15 m (d) 20 m
240  39 Hz
f2 = Ans. (b)
18
240 Sol.
f2 = GHz
6 J S = 100 A/m 2

f2  40 GHz z = 0.0059 cm

36. An antenna has a radiation resistance of 72 , J = 0.272 A/m2
a loss resistance of 8  and power gain of
16. Calculate its directivity. J = JS e z
(a) 15.8 (b) 16.8
z
(c) 17.8 (d) 18.7 0.272 = 100e
 0.272  z
e 2
x 5 3
100 Sol. lim %
x2 2
x  2x
 0.272 
z = ln  
 100  Applying L’Hospital rule
z = –5.90 d  
x2  5  3
lim dx
5.90 x 2 2
d(x  2x)

R
 = 2
0.0059  10 dx
 = 105
2x

TE
1 2
2 x 5 22
Skin depth   = lim   1/ 3
 x 2 2x  2 2 3 2
  10 m 40. What is the R.M.S of following waveform if the
average value is zero ?
38. A random variable z, has a probability density
AS
function f(z) where f(z) = e–z 0  z  , the
4V
probability of 0  z  2 will be approximately.. 0
T/2
(a) 0.368 (b) 0.135
T
(c) 0.393 (d) 0.865
17 8
Ans. (d) (a) V (b) V
M

3 3
Sol. f z(z) = e–z 0z
5 1
(c) V (d) V
2 3 3
P(0  z  2)  0 fz (z) dz Ans. (c)
S

2 z Sol.
= 0 e dz
x(t)
z 2
[e ]
IE

=
1 4V
0 t
= –[e–2 – 1] t1
A
= 1 – e–2 T/2
T
= 0.865
xavg = 0
x2  5  3
39. Evaluate lim 1 AT 1 T 
x 2 x2  2 x A.t1  =   t1   4  A 
2 2 2 2 
(a) 1/3 (b) 
AT1 AT 1 AT 
(c) –3 (d) 0  =  2T   4 t1  A t1 
2 2 2  2 
Ans. (a)
3 AT 41. A radar system uses TWTA as high power RF
= T – 2t1 ...(i) source for transmiting 300 W Peak Power. The
4
efficiency of transmitter during pulse is 75%
A 4 and the transmit duty is 25%. If the DC power
t1 = T / 2 required during pulse off period is 20W. The
average power dissipation in TWTA is

R
1 8
t1 = T (a) 81.25 W (b) 125 W
(c) 50 W (d) 40 W
AT

TE
t1 = ...(ii) Ans. (d)
8
Put the value of t1 in equation (i) TH TL
Sol.
3 AT AT
= T  2. T
4 84
AS
Given data,
3 AT AT
 =T Ptr = 300 W
4 4
AT = T
 tr = 75%
A 1
% D = 25%
M

T Pdc = 20 W
t1 
8
To find Pavg.
8 T  Duty cycle is 25%
x(t) = t  1, 0  t  = –1, T/2 < t < T
T 2
S

TH
 % D = T  T  100%  25%
T H L
1 2
d  t  dt.
T 0
RMS of x(t) =
IE

T 3T
So, TH = , TL =
4 4
T/2 2 T
1 8  
Now, during pulse ON :
=    t  1 dt    12 dt 
T  0
T  T/2  Ptr = 300 W,

1
T /2
 64 2 16  T  = 75%
=    2 t  1 t  dt  
T  T T  2 
0 Ptr
 = P
del
1  64 T 3 8 T 2 
=      T
T  37 2
8 T 4  Ptr 300
 Pdel =  × 100 = 400 W
 75
1 5 5
=  T=  Pdissipated  Pdel – Ptr = 400 W – 300 W
T 3 3
= 100 W
 Now, during pulse off : Ans. (c)
Pdc = 20 W Sol. 1/f noise is known as flicker noise. 1/f (flicker)
noise of MOSFET is much higher than BJT. So,
 Pdissipated = Pdc = 20 W flicker noise is dominant in MESFET than BJT.
 Avg. power dissipation in TWTA. 44. Which factor determines the range resolution
of a radar ?
 T 3T  1
Pavg =  100   20   (a) Size of the antenna
 4 4  T

R
= 25 + 15 = 40 W (b) Bandwidth of the transmitted pulse

42. Which of the following is NOT true about opto- (c) Power radiated form the antenna
(d) Centre frequency of the radar

TE
couplers ?
(a) It is a solid state device to isolate two Ans. (b)
parts of a circuit Sol. Range resolution depends on the width of
(b) It can act as an input device or output transmitted pulse, the types of targets and the
device but not both efficiency of the receiver and indicator. Pulse
width is the primary factor in range resolution.
AS
(c) Combines a Light Emitting Diode and a
Photo Transistor in a single package Theoretical range resolution
(d) it prevents electrical noise or voltage C0  
(Sr ) 
transients of one circuit from integrating 2
with other circuit where,  = pulse width
Ans. (b) 45. A signal having frequency component from DC-
M

Sol. 2 kHz is to be Pulse code Modulated with a 6

bit Encoder. Minimum carrier bandwidth
required is ?
(a) 4 kHz (b) 128 kHz
(c) 16 kHz (d) 12 kHz
S

Ans. (d)
opto coupler Sol.
IE

Optocoupler is a component that transfers elec- M(t) M(f)

trical signal between two isolated circuits by
using light.
f
0 2KHz
Opto couplers consists of an LED and a
phototransistors in the same opaque-package.
f max = 2 KHz
43. Which of the noise types is dominant in Metal n = bits/sample
Semiconductor Field Eff ect Transistor
Bit rate Rb = nf s f s = 2f max
(MESFET) when compared to Bipolar Junction
Transistor (BJT) ? Rb = 6 × 2 × 2 K
(a) Thermal Noise (b) Shot Noise Rb
BW   12 KHz
(c) Flicker Noise (d) All of the above 2
46. Which of the following is NOT true for Schmitt (c)
V
Trigger ?
(a) Schmitt trigger can be used as Sine-to-
Square Wave converter
(b) Schmitt trigger uses OP-AMP in Open

R
Loop Mode.
/2 
(c) Hysteresis exists in Schmit Trigger
(d) None of the above

TE
(d) All of the above
Ans. (a)
Ans. (b)
Sol. • Schmitt trigger can be used as sinusoidal Sol. (Va) fa
Vd
to square wave converter. (Vb) fb
AS
• Hysterisis exists in schmitt trigger.
• Schmitt triggers uses closed loop Op-
fa
Amp.
47. Two signals f a and f b are given as input to EX-
fb
OR to measure phase difference. The average
output voltage will be
M

Va Vb Vd
0 0 0
fa 0 1 1
1 0 1
fb
S

1 1 0
(a)
V vd(avg)
IE

VOH
V/2

– –/2
 e
0 /2
/2  2

(b)
V

Above diagram is true when Va and Vb have

V/2
same duty cycle.
If Va and Vb are having different duty cycle.
 /2 4
 vd(avg)
x(t)  x(2t)  3
VOH

x(t  t 0 )  x(2t  t 0 )  3 …(i)

– –/2
 e
0 /2 y(t  t 0 )  x(2(t  t 0 ))  3 …(ii)

= x(2t – 2t0) + 3

R
VOL
(i)  (ii) so this is time variant.
Constant term is added so it is nonlinear.
48. Consider the signal

TE
N1
2cos  t   cos  2t  t  0
X(t) =  2sin t  sin 2t 50. Consider the system R m   y[n]x[n –m]
    t0 n0

where y[n] and x[n] are real periodic signals

The signal X(t) is :
with period N. The above output can be
(a) Periodic with period = 2 obtained using
AS
(b) Periodic with period =  (a) IFFT{FFT[Y] × conj(FFT[X]}
(c) Non-periodic (b) IFFT{FFT[Y] × FFT[X]}
(d) Periodic with period =  /2 (c) IFFT{FFT[Y] × (FFT[–X])}
Ans. (c) (d) IFFT{FFT[–Y] × (FFT[X])}
Ans. (a)
M

2cos t  cos 2t t  0
Sol. X(t) = 
 2 sint  sin 2t t  0 DFT
Sol. x(n) 
N
 x(k)
For signal to be periodic it must exist from
 to   . DFT
y(n)   y(k)
N
S

Since there are two different signals. Hence it

DFT
is non-periodic. R(m)  x(k)y(k)
N
49. The system y(t) = x(2t) + 3 is
IE

N 1
(a) Linear and time invariant R(m)   y(n) * ((n  m))N
(b) Causal and linear n0

(c) Non-linear and time variant

R(m)  IFFT FFT(y)  conj(FFT[X]
(d) Linear and memoryless
Ans. (c) 51. Consider the system defined by

Sol. y(t) = x(2t) + 3 d2 y dy

2
 a  b  ab  x  t  ; a  0, b  0
Time variant/invariant dt dt
can be realized using which impulse response
x(t) h(t) y(t) function.
 (a) h  t    eat  ebt  u  t  1  ab 
h(t) = 1  e(a b)t  u(t)
(a  b)  
(b) h  t    e at  ebt  u  t 
52. A continuous time signal has frequency content
(c) h  t    eat  e bt  u  t  at f = 10 MHz, 50 MHz and 70 MHz. The signal
(d) h  t   e ab  t u  t  is sampled at sampling frequency of 56 MHz.

R
The frequency content of output will be
Ans. (*)
(a) 10 MHz
d2 y dy

TE
(b) 10 MHz and 6 MHz
Sol.  (a  b)  ab = x(t), a > 0, b > 0
2 dt
dt (c) 10 MHz, 6 MHz and 14 MHz
Taking Laplace transform on both sides (d) 46 MHz
s2y(s) + (a + b) sY(s) + ab = X(s) Ans. (c)
[s2 + (a + b)s] Y(s) + ab = X(s) Sol. f 1 = 10 MHz
AS
f 2 = 50 MHz
X(s)  ab
Y(s) = f 3 = 70 MHz
s2  (a  b)s
f s = 56 MHz
For Impulse Response : After sampling : Frequency content of the
x(t) =  (t) output:
M

X(s) = 1 # f 1 = 10 MHz
y(t) = h(t)
66 MHz
y(s) = H(s) f s ± f 1 : 56 ± 10
46 MHz
S

1  ab 1  ab
H(s) = 2 = 122 MHz
s  (a  b)s s[s  (a  b)]
2f s ± f 1 : 112 ± 10
IE

102 MHz
1  ab A B
= 
s[s  (a  b)] s s  (a  b) # f 2 = 50 MHz

s(1  ab) f s ± f 2 : f s + f 2  50 + 56 = 106 MHz

1  ab
A = s[s  (a  b)] =
s 0 ab |f s – f 2| = |56 – 50| = 6 MHz
(1  ab) 62 MHz
B = [s  (a  b)]. s[s  (a  b)
s (a b) 2f s ± f 2 : 112 ± 50
162 MHz
(1  ab) # f 3 = 70 MHz
B= 
(a  b)
f s ± f 3 : f s + f 3 = 56 + 70 = 126 MHz
1  ab  1 1 
H(s) = 
(a  b)  S S  (a  b)  |f s – f 3| = |56 – 70| = 14 MHz
 182 MHz (a) Phase step only
2f s ± f 3 112 ± 70
(b) Constant velocity and phase step
42 MHz
53. The steady state response for an input X(s) = (c) Acceleration
K/s to a system whose transfer function is H(s) (d) Jerk
in time domain is
Ans. (b)
H(s) = 1/((s+5)(s+2))
Sol.

R
(a) K/10 (b) e–5t u(t) G(s)
(c) e–2t u(t) (d) (e–5t + e–2t) u(t) E(s)
+ K2 1
Ans. (a) X(s) K K1+ Y(s)

TE
– s s
K
Sol. X(s) =
S
1
H(s) =
(s  5)(s  2)
 K  1 K(K 2  sK1)
AS
E(s) = K  K1  2    =
Y(s)  s  s  s2
H(s) =
X(s)
1
Y(s) = H(s).X(s) X s .X(s)
E(s) = = 1 K(K 2  sK1)
1  G s
K s2
Y(s) =
s(s  2)(s  5)
s2
M

Steady State Response E(s) = .X(s)

s2  K(K 2  sK1)
K Steady State Error :
Yss(s) = Lt s.Y(s) = Lt s.
s 0 s 0 s(s  2)(s  5)
s2 .X(s)
S

K eSS = sLt s.E(s) = Lt s.

Yss(s) = 0 s 0 s2  K(K 2  sK1)
10
Case I : x(t) = u(t)
IE

54. Consider a closed loop stable phase locked

loop system as shown in the diagram below.
1
X(s) =
s
X(s) E(s)
K K1+K2/s 1
s3 .
eSS = Lt 2 s =0
s0 s  K(K  sK )
2 1
Y(s) 1/s
Case II : x(t) = tu(t)

The system is capable of producing zero 1

X(s) =
steady state error E(t) for s2
 1 0 is absolute permittivity
s3 . 2
eSS = Lt 2 s =0
s0 s  K(K  sK ) r is imaginary part of complex
2 1
relative permittivity
t2
Case III : x(t) = u(t) E0 is peak value of applied voltage
2

R
57. The 4:1 Multiplexer implemented as
1
X(s) =
s3 0
A

TE
1 Y
s3 . 3
s 1
ess = Lt 2  1
s 0 s  K(K 2  sK1) KK 2

1 B C
ess = KK (a)  (1, 6, 3, 7) (b)  (1, 2, 5, 7)
2
AS
55. The modes in a reflex klystron (c)  (2, 3, 4, 5) (d)  (1, 3, 4, 7)
Ans. (a)
(a) Result f rom excessiv e oscillating
frequencies of the cavity Sol.
(b) Correspond to diff erent oscillating
frequencies of the cavity
M

(c) Are caused by spurious f requency

modulation
(d) All give much the same frequency but
different transit times
Y = BC  0  BC  A  BCA  BC
S

Ans. (d)
56. A dielectric is subjected to alternating electric = ABC  ABC  (A  A)BC
field. The dielectric losses are proportional to
= ABC  ABC  ABC  ABC
IE

(a) Real part of the dielectric constant

Y = (1,6,3,7)
(b) Imaginary part of the dielectric constant
58. In a digital circuit the set-up time violation can
(c) Both Real and Imaginary part of the be fixed by
dielectric constant.
(a) Increasing the clock frequency
(d) None of the above
(b) Increasing the delay of data path logic
Ans. (b)
(c) Slowing the clock frequency
Sol. The dielectric losses in a dielectric when it is
subjected to alternating field is given as, (d) None of the above
Ans. (c)
1 2 3
W(t) =  0r E0 watt / m
2 Sol. In a digital circuit setup time violation can be
where,  is angular frequency of applied fixed by increasing the time or slowing the clock
alternating field. frequency.
59. Number of J-K flip flops in modulo 16 binary y 2
y=x
up-counter are
(a) 16 (b) 4
(c) 8 (d) 2
Ans. (b) y=
1
x
Sol. M= 2n

R
16 = 2n x
1/2 1
n=4

TE
Number of J-K F/F in modulo 16 binary up- (a) ln 2 – 7/24 (b) ln 2 + 7/24
counter = 4
(c) ln 3 – 5/24 (d) ln 3 + 5/24
60. The solid angle subtended by the sun as
Ans. (a)
v iewed f rom the earth is   4  105 1
 1
steradian. A microwave antenna designed to Sol. Required area =   y   dy
AS
 2
be used for studying the microwave radiation 1/4

from the sun has a very narrow beam whose 2

 1 1
equivalent solid angle is approximately equal    y  2  dy
1  
to that subtended by the sun. What is the
approximate directivity, D ? 1 2
 2 3/2 1   1 
=  y  y    ln y  y 
M

3 2  1/4  2 1
(a) 105 (b)   105
7
(c)   106 (d) 106 = ln2 
24
Ans. (b) 62. Find the Eigen values  in the system
S

Sol.  4 1  x  x
   =  
Sun 3 2  y  y
(a) 1 and 5 (b) 4 and 3
IE

 = 4 × 10–5 (c) 1 and 2 (d) 2 and 4

Ans. (a)

 4 1  x  x 
Sol.       
Earth  3 2  y  y 

4 4 5  4 1
Directivity =     10 A=  
Solid angle 4  105 3 2
61. Find the area of the region bounded by the
curves y = x2, y = 1/x and x = 1/2 (see in A  1  0
graphical representative figure)
 (c)
4 1   0 
3 2   0    0 A
   
t
4 1
0

R
3 2

 4    2     3  0
(d)

TE
2
8  6    3  0 A

2
  6  5  0

(  5)(  1)  0 t
AS
  = 1, 5
63. Find the transient response of a pair of complex
poles as given below Ans. (a)
j Sol.
X
j
M


X j0
X

(a)
–a 
A
S

Poles = –a±j0
X –j0
t
IE

1
T(s) =
(s  a  j0 )(s  a  j0 )

1
T(s) =
(S  a)2  20
(b)
A x(t) = s(t)
X(s) = 1
t 1
Y(s) =
(s  a)2  02

y(t) = e–at sin 0 t u(t)

 y(t) 66. For the following circuit, determine the output
voltage ‘V0’ in terms of input voltages V1 and
V2, assuming A1 and A2 are ideal op-amps

10 k 1 k 10 k
1K

t v0
"A1"
"A2"

R
V1
V2

(a) 11 V2 – V1 (b) V2 – 11V1

64. A Sensistor
characteristics
(a)
exhibits the f ollowing

Either increase or decrease in resistance

TE Ans. (c)
Sol.
(c) 11(V2 – V1) (d) None of the above
AS
10 k 1 k 10 k
value with increase in temperature based 1 k
on the material type usedin the thermistor A1
V0 A2 v0
(b) Always increase in resistance value with
increase in temperature V1
V2
(c) Always decrease in resistance value with
M

increase in temperature. For Op amp A1,

(d) No change in resistance value with  1 11
temperature. V01 =  1   V1 = V1
 10  10
Ans. (b) For Op amp A2
S

Sol. Sensistor is a resistor whose resistance V0 = –10V01 + 11V2

changes with temperature. The resistance
increases exponentially with temperature i.e. 11
IE

= 10  V1  11V2
temperature coefficient is positive. 10

65. When an electromagnetic wave is incident on = 11(V2 – V1)

an object hav ing surf ace roughness 67. Dominant mechanism for motion of charge
comparable to the wavelength, then carriers in forward and reverse biased silicon
(a) Specular reflection occurs p-n junctions are

(b) Absorption occurs (a) Drift in forward bias, diffusion in reverse

bias
(c) Diffused scattering occurs
(b) Diffusion in forward bias, drift in reverse
(d) None of the above bias
Ans. (c)
 (c) Diffusion in both forward and reverse bias
(d) Drift in both forward and reverse bias
Ans. (b) d = 1 km
Sol. In forward biased p-n diode, diffusion of charge
carrier takes place. So motion of charge carri-

R
ers in forward biased p-n diode is mainly due to Transmitting antenna
diffusion process where as in reverse bias mo- Dt = 1 m Dr = 0.5 m
tion of charge carriers due to electric field i.e.
Pt = 1 watt x mwatt: Preceived

TE
drift process.
f = 10 GHz
Diffusion of holes
Diffusion of PtGdt
electronics Preceived = A er
– 4d2
e
2
AS
D 
Gdt = 6  t  (for parabolic dish antenna)

Forward bias
2
Driff of holes Pt A er D
(minority carrier) Preceived =  6  t 
E 4d2 
e– e–
M

h h
Pe
–
h N Pt, Aer, d, Dt is fixed
–
h h e
1
driff of electrons Preceived 
2
S

Reverse bias
P1  f12
68. In a telecommunication trans-receive system,
the transmitting antenna with antenna aperture
IE

of 1m is fed with 1W of power at 10 GHz. The P1 f12

=
receive antenna with antenna aperture of 0.5m P2 f22
located at 1km away receives x mW of power.
If the transmitting frequency changes to 20 f 1 = 10 GHz
GHz, what will happen to receive power?
f 2 = 20 GHz
(a) Increase by 3 dB
2
(b) Increase by 6 dB P1  10 
P2 =  
(c) Decrease by 3 dB  20 

(d) Decrease by 6 dB
P2  4P1
Ans. (b)
Sol. P2 will increase by a factor 4 or
10log104 = 6 dB
 V0(av) =  Vs , where  is duty cycle.
69. Find the maximum directivity of an antenna
whose power density is given by Wrad = Given  = 0.25
A sin  Vs = 220 V
âr 0 W / m2 where A is peak value of
r2 0
 V0(av) = 0.25 × 220 = 55 Voltss
power density.  is the usual spherical
71. A single-phase full-wave AC phase controller
coordinate and âr is the radial unit vector.. feeds power to a resistive load of 100  from

R
(a) 4/ (b) 2 /  a 220 V, 50 Hz supply. What will be the R.M.S.
output voltage at delay angles 1 = 2 = 
(c) 3/ (d) 5 / 

TE
=  / 2 of both transistor?
Ans. (a)
220
A0 sin  watt (a) V (b) 2  220 V
Sol. W rad = 2
âr 2
2
r m
(c) 2 ×110 V (d) 2 ×220 V
2
U(, )  r Wrad  A 0 sin aˆ r
AS
Ans. (a)
U(, ) U(, ) Sol. For single phase midpoint controlled converter
Gd (, )   4
Uavg  U(, ) d –
r.m.s. output voltage is
4 A 0 sin 
Gd (, ) 
1/2
 A 0 sin  sin dd Vm  sin2 
M

V0(ms) = (  ) 
4 sin  2  2 
=  2
2 Given Vm = 220 2
0 sin d
0
d

2sin  2 sin   =
Gd ( , ) 
S


 2
2 
0 sin d
2    
1/2
 sin2   
220 2    2 
4     
IE

Gd (, ) max   V0(ms) = 2  2 2 


 
70. A DC series motor is driven by a chopper  
circuit. The supply voltage is 220 V and the 220
= Voltss
duty cycle is 25%. Determine the DC voltage 2
applied to the motor 72. A half-wave rectifier is used to charge a 12 V
(a) 165 V (b) 55 V battery through a resistance ‘R’. The input
transformer is fed by 34 V AC with turns ratio
(c) 220 V (d) 110 V 2 : 1. Calculate the conduction period of the
Ans. (b) diode.
Sol. We know that, for step down chopper – (a) 136° (b) 120°
Average output voltage (c) 173° (d) 137°
Ans. (b) (a) K(s – z1)/(a0 + a1s + a2s2)
Sol. (b) K.s/(a0 + a1s + a2s2 + a3s3)
(c) K(s – z1)/(a0 + a1s)
(d) K/(a0 + a1s)
R
34V, 50Hz Vs

R
Ans. (a)
12V
74. Phase of the transfer function of the following
2:1 circuit is

TE
VS = 17 V, 50 Hz
 by KVL, C
VA = VS, VK = 12 V Vi R Vo

 VAK > 0
VS – 12 > 0
AS
(a) tan1(1/ RC) (b) tan1(RC)
17 2 sin t  12  0
Let us assume that (c) tan1(RC / ) (d) tan1( / RC)

t =  Ans. (a)
Diode is ON Sol.
M

 17 2 sin t = 12
C
17 2 sin  = 12
Vi R Vo
1 12 
 = sin   = 29.943°
S

 17 2 
Therefore, VS is greater than 12 volts only in
R
the period of 29.943° to 150.05°. V0 = Vi
1
IE

Therefore, conduction period of diode is R

jc
=   2 =   2  29.943  = 120°.
V0 R R
73. Following is the small signal high frequency = =
Vi R  1/ jc R  jc
equivalent circuit of a common source amplifier.
V0/Vi will be of the form 1 1 
 1  1 
 Phase =    tan  = tan  
(K, z1, a0, a1, a2, a3 are constants containing  Rc   Rc 
circuit elements) 75. The error in measurement of a dc voltmeter
Cgd with input signal: 1.5 V, voltage range: 2V,
accuracy : ±(25 ppm of reading + 5 ppm of
R range) is
Rg Cgs rd Cds RL Vo (a) ±50 µV (b) ±30 µV
gm×Vgs
(c) ±47.5 µV (d) ±10 µV
Ans. (c) The value of gain f or which system is
marginally stable is
 25   5 
Sol. Error =   Reading × 6    Range × 6   (a) K = 4 (b) K = 6
 10   10  
 25   5  (c) K = 10 (d) K = 2
=   1.5  6    2  6  
 10   10   Ans. (b)
= ± (37.5 + 10) × 10–6 Sol.

R
= ± 47.5 V +
G(S)
X(s) Y(s)
–
76. Characteristic equation of H(s) is given as
3s4 + 2s3 + 5s2 + s + 2 = 0 is
(a)
(b)
(c)
(d)
unstable
stable
all poles in right half plane
unstable with only one pole in right half
TE G(s) =
K(s  4)
s(s  1)
H(s)

, H(s) =

Characteristics Equation :
1
s2
AS
plane 1 + E(s)H(s) = 0
Ans. (a)
K(s  4)
Sol. 3s4 + 2s3 + 5s2 + s + 2 = 0 1 =0
s(s  1)(s  2)
S4 3 5 2 s3 + 3s2 + (K + 2)s + 4K = 0
S3 2 1
M

Routh’s Array
S2 3.5 2
S4 –0.443 0
S3 1 (k+2)
S0 2
2
S 3 4k
There is sign change in first column of Array. 3(K+2) – 4k
S 0
S

Therefore system is unstable. 3

S0 4k
Number of closed loop poles in right half of s-
plane = Number of sign changes in first column For Marginally stable system
IE

=2
3(K  2)  4K
77. Consider the feedback system =0
3
X(s) Y(s) 3K + 6 – 4K = 0
G(s)
K=6
78. Consider the Bode plots 9magnitude and
H(s) phase) of two different open loop transfer
functions of two unity feedback systems. The
K(s  4)
G(S) = open loop transfer functions have poles in right
s(s  1) half plane. The closed loop system formed from
1 these open loop systems. Which of the
H(s) = following holds true?
s2
 dB (b) Closed loop systems using I and II both
are unstable
(c) Closed loop system with I is unstable and
0 II is stable
(d) Closed loop system with I and II are stable

R
Ans. (a)
–4

–160

–180
TE dB
AS
gc
0
(I) GM = 4 dB
dB –4
M

0
S

–160°
IE

PM = 20°
–160
–180° pc
–180

(II) GM  4dB 
 = Both GM & PM are positive there-
(a) Closed loop system with I is stable and PM  20 
with II is unstable
fore system is stable.
 (a) Two bit adder with sum and carry
respectively
(b) Two bit subtractor with sum and borrow
respectively
dB
(c) S = AB  AB; C = AB
(d) None of the above
4

R
Ans. (b)
GM = 4 dB Sol.
gc

TE
B A
0

AB
AS
S = AB + AB
AB
A
C = AB
pc
B
–180°
PM = –20° The above circuit is half substractor
M

–200° 80. What is the value of the register formed fromD

flip-flops using Q0, Q1 and Q2 as output (Q0
GM = – 4dB Q1 Q2) after 14 cycles
PM = – 20°
S

Both GM and PM are negative therefore Q0 Q1 Q2

system is unstable D Q D Q D Q
79. The circuit is formed as shown below. The
IE

Q Q Q
output S and C implement
A CLOCK
B
(a) 110 (b) 000
(c) 001 (d) 011
S
Ans. (a)

A
C
B
Sol. Modulo of Johnson counter = 2n = 6
Q0 Q1 Q2
0 0 0  Initial Content
Q0 QJ QL 1 0 0  After 1st C.P.
1 1 0  After 2nd C.P.

R
D Q D Q D Q   
0 0 0  After 12th C.P.
1 0 0  After 13th C.P.

TE
Q Q Q
1 1 0  After 14th C.P.
The above is Johnson Counter.
AS
M
S
IE