Professional Documents
Culture Documents
2 Paradigm Shift 45
-How we overcame 45/40 nm problems
Present Date: Sep. 8, 2010
3 New Paradigm Shift 20
-Now we are facing new challenges!
1 2
Then now?
Silicon cycle
Yes, it is in the Ice Age at present.
Do you know that! 1995 2000 2005 2010 2015
3 4
Tool
From office to consumer electronics.
Technology We have to obey the retail requirement. Tool is not in this chain.
Market
5 6
1
Good news from DQ Good news from Silicon wafer
2009 is the lowest!
Mil $ Millions of Square Inches
3,000
DQ
Scenario 1 (Most Likely Case)
Scenario 2
Upward from
2,500
Scenario 3 2Q 2009
Set 2,000
10 1,500
Device 1,000
MPU
500
1Q08 2Q08 3Q08 4Q08 1Q09 2Q09 3Q09 4Q09 1Q10 2Q10 3Q10 4Q10
1
Lowest Tool
If Silicon wafer is up, device is up, then material is up.
So, tool?
0.1
2002 2003 2004 2005 2006 2007 2008 2009 2010 2011 2012 2013
7 8
9 10
Paradigm shift 20
Good news : New challenges of R&D in Semiconductor Families How to survive ICe Age
IC FPD PV LED
IT
1 Market Trend in ICe Age
- I would like to show that IC world in ICe Age
CMP
Plating
CMP & Plating 2 Paradigm Shift 45
for FPD -How we overcame 45/40 nm problems
BT μTAS
2
Paradigm Shift 45 means
P- 45 nm P-45 cm P-45 μm In Hawaii (ITPC)
No see by light Bigger variation Thinning
Cu resistivity increased
450 mm
SOB
CoC In 2005
SiP
R 300 mm
SOC & 2007
PoP
IMEC
$
$ IMEC
CEO/COO
13 14
TR
③Reverse scaling ④RC variation
No More Moore No! More Moore More Than Moore? TR
IMEC
$ ⑤Electron scattering
⑥Lower k
TR TR
TR TR
⑨Co cap ⑪Air gap ⑬RF ⑭Light
⑦Jmax more ⑧Cross talk
⑩Cu alloy ⑫CNT
15 16
【Beyond Cu/Low-k】
2001 2002 2003 2004 2005 2006 2007 2008 2009 2010
Reverse Scation Direct CMP Low down force Ru liner Non-contact cleaning IPA dry Metal cap Edge control
Electron Scattering
Jmax 22nm @ Back Fill 2 mm
Low k
Mechanical Strength e
2005
2007
100.0
Effective Diel ectric Constant; keff
ITRS2003
ITRS2005
Is CMP.
I TRS2007-2008
10.0
Jmax
ITRS2001
I TRS1999
1.0
Thin and EM Crisis
JEM k=2.5 Conformal Effective 1.5 mm
2009
17 18
3
Now the answers are
P- 45 nm P-45 cm P-45 μm
No see by light Bigger variation Thinning
Cu resistivity increased
450 mm CoC
SOB
SiP
R SOC
P- 45 nm P-45 cm P-45 μm
Now is the time for 3D
Do you agree?
More Moore until 11 nm Possible if you want
But scaling delayed Last wafer size? And Emerging Device!
Co
mb
in ing
45 -> 45/40 xxx de
450 vic
32 -> 32/28 e
22 -> 22/20 200 300
19 20
21 22
4
In addition, example of special trial Planarization performance, Faster the better
25 26
xN xP
Gas Inlet
Paradigm shift 20
Polish profile vs tilt angle
How to survive ICe Age
Rotation of pad
1 Market Trend in ICe Age
- I would like to show that IC world in ICe Age
600
Polish rate (nm/min)
Im = 0.4 (A)
500
2 Paradigm Shift 45
400
-How we overcome 45/40 nm problems
300
200
100
3 New Paradigm Shift 20
0
-Now we are facing new challenges!
-100 -50 0 50 100
Wafer position (mm)
29 30
5
New Paradigm Shit 20 (From 2010)
Paradigm shift 20
P- 20 nm P-20 cm P-20μm
Lower than Cu? 200 mm wafer is also? How thin ? How to survive ICe Age
?
Cu
450 20μm
200 300
20 50 Width (nm)
- IC world is always in ICe Age
- Technology is boiling, but market is easy to evaporate.
P- 20 nm P-20 cm P-20μm
Aspect ratio of TSV
Material which electron How about this idea?
2 Paradigm Shift 45
Scattering is small. 100-200mm wafer
10 um 10 um
-We overcame difficulty of 45 nm by R&D efforts.
1000 mm
31 32