Generally Deep Nwell is used to isolate NMOS from the substrate of other NMOS.

For example suppose all the NMOS in a amplifier is kept in PWELL (common substrate ) and that is
connectet to gnd. and there is other NMOS whose substrate is connected to other potential not to gnd.
In that case you need to isolate that NMOS from other NMOS, otherwise substrate will get short. So to
avoid this DeepNwell is used.

So, for that you have to put that particular NMOS in a DeepNwell Layer and that MOS should sorround
with a NWELL guardring.
Here Deep Nwell is act as a bottom side and the NWELL guardring is act as a sidewall to seperate that
particular NMOS from common P-type substrate.

For Example:- Suppose there is a Pond full of water and you want to put some instrument in that pond
but at the same time water should not touch to that instrument. So for that you will construct
something like BOX (with five faces, top side should open) and kept that instrument inside that BOX and
put that BOX in the water, so that water will not able to touch that instrument. Similarly the bottom
layer of the BOX is act as DEEPNWELL and the side wall of that BOX act as NWELL guardring. Hence the
Psubstrat of that particular NMOS get isolated with other NMOS.

D-Nwell can be used as

1) noise isolation
2) nmos which needs different sub potential

So if some bulk of pmos is at different potential, then that should have not be put under the same DNW.
bcos nwell is connected to VDD and nwell and DNW are shorted to VDD.

So PMOS bulk if not VDD, should not be put under DNW.