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April 1995

BS170 / MMBF170
N-Channel Enhancement Mode Field Effect Transistor

General Description Features


These N-Channel enhancement mode field effect High density cell design for low RDS(ON).
transistors are produced using Fairchild's proprietary, high
Voltage controlled small signal switch.
cell density, DMOS technology. These products have been
designed to minimize on-state resistance while provide Rugged and reliable.
rugged, reliable, and fast switching performance. They can
High saturation current capability.
be used in most applications requiring up to 500mA DC.
These products are particularly suited for low voltage, low
current applications such as small servo motor control,
power MOSFET gate drivers, and other switching
applications.

_______________________________________________________________________________

Absolute Maximum Ratings T A = 25°C unless otherwise noted


Symbol Parameter BS170 MMBF170 Units
VDSS Drain-Source Voltage 60 V
VDGR Drain-Gate Voltage (RGS < 1MΩ) 60 V

VGSS Gate-Source Voltage ± 20 V


ID Drain Current - Continuous 500 500 mA
- Pulsed 1200 800
PD Maximum Power Dissipation 830 300 mW
Derate Above 25°C 6.6 2.4 mW/°C
TJ,TSTG Operating and Storage Temperature Range -55 to 150 °C
TL Maximum Lead Temperature for Soldering 300 °C
Purposes, 1/16" from Case for 10 Seconds
THERMAL CHARACTERISTICS
RθJA Thermal Resistacne, Junction-to-Ambient 150 417 °C/W

© 1997 Fairchild Semiconductor Corporation BS170 Rev. C / MMBF170 Rev. D


Electrical Characteristics (TA = 25°C unless otherwise noted)
Symbol Parameter Conditions Type Min Typ Max Units
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 100 µA All 60 V
IDSS Zero Gate Voltage Drain Current VDS = 25 V, VGS = 0 V All 0.5 µA
IGSSF Gate - Body Leakage, Forward VGS = 15 V, VDS = 0 V All 10 nA
ON CHARACTERISTICS (Note 1)
VGS(th) Gate Threshold Voltage VDS = VGS, ID = 1 mA All 0.8 2.1 3 V
RDS(ON) Static Drain-Source On-Resistance VGS = 10 V, ID = 200 mA All 1.2 5 Ω
gFS Forward Transconductance VDS = 10 V, ID = 200 mA BS170 320 mS
VDS > 2 VDS(on), ID = 200 mA MMBF170 320
DYNAMIC CHARACTERISTICS
Ciss Input Capacitance VDS = 10 V, VGS = 0 V, All 24 40 pF
f = 1.0 MHz
Coss Output Capacitance All 17 30 pF
Crss Reverse Transfer Capacitance All 7 10 pF
SWITCHING CHARACTERISTICS (Note 1)
ton Turn-On Time VDD = 25 V, ID = 200 m A, BS170 10 ns
VGS = 10 V, RGEN = 25 Ω
VDD = 25 V, ID = 500 mA, MMBF170 10
VGS = 10 V, RGEN = 50 Ω
toff Turn-Off Time VDD = 25 V, ID = 200 m A, BS170 10 ns
VGS = 10 V, RGEN = 25 Ω
VDD = 25 V, ID = 500 mA, MMBF170 10
VGS = 10 V, RGEN = 50 Ω
Note:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%.

BS170 Rev. C / MMBF170 Rev. D


Typical Electrical Characteristics
BS170 / MMBF170

2 3
VGS = 10V 9.0 V GS =4.0V
8.0 4.5

DRAIN-SOURCE ON-RESISTANCE
7.0 5.0
, DRAIN-SOURCE CURRENT (A)

2.5
1.5

RDS(on) , NORMALIZED
6 .0
6.0 2
7.0
1

5.0 8.0
1.5
9.0
10
0.5
4.0 1
D
I

3.0
0 0.5
0 1 2 3 4 5 0 0.4 0.8 1.2 1.6 2
V DS , DRAIN-SOURCE VOLTAGE (V) I D , DRAIN CURRENT (A)

Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Gate Voltage


and Drain Current.

2 3

V G S = 10V V GS = 10V
DRAIN-SOURCE ON-RESISTANCE

1.75 ID = 500mA 2.5


DRAIN-SOURCE ON-RESISTANCE

TJ = 125°C
R DS(on) , NORMALIZED
R DS(ON) , NORMALIZED

1.5 2

1.25 1.5
25°C
1 1
-55°C
0.75 0.5

0.5 0
-50 -25 0 25 50 75 100 125 150 0 0.4 0.8 1.2 1.6 2
TJ , JUNCTION TEMPERATURE (°C) I D , DRAIN CURRENT (A)

Figure 3. On-Resistance Variation Figure 4. On-Resistance Variation with Drain


with Temperature. Current and Temperature.

2 1.1
T J = -55°C
VDS = 10V 25°C V DS = VGS
GATE-SOURCE THRESHOLD VOLTAGE

125°C 1.05
1.6 I D = 1 mA
ID , DRAIN CURRENT (A)

Vth , NORMALIZED

1
1.2

0.95

0.8
0.9

0.4
0.85

0 0.8
0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150
V , GATE TO SOURCE VOLTAGE (V) TJ , JUNCTION TEMPERATURE (°C)
GS

Figure 5. Transfer Characteristics. Figure 6. Gate Threshold Variation with


Temperature.

BS170 Rev. C / MMBF170 Rev. D


Typical Electrical Characteristics (continued)
BS170 / MMBF170

1.1 2
ID = 100µA V GS = 0V
1
DRAIN-SOURCE BREAKDOWN VOLTAGE

1.075
0.5

IS , REVERSE DRAIN CURRENT (A)


, NORMALIZED

1.05
TJ = 125°C
0.1
1.025 25°C
0.05
-55°C
1
DSS
BV

0.975 0.01

0.005
0.95

0.925
-50 -25 0 25 50 75 100 125 150 0.001
0.2 0.4 0.6 0.8 1 1.2 1.4
TJ , JUNCTION TEMPERATURE (°C)
V SD , BODY DIODE FORWARD VOLTAGE (V)

Figure 7. Breakdown Voltage Variation Figure 8. Body Diode Forward Voltage Variation with
with Temperature. Current and Temperature.

60 10

40 V DS = 25V
ID = 5 0 0 m A
C iss
V GS , GATE-SOURCE VOLTAGE (V)

8
20
CAPACITANCE (pF)

C oss
6
10

5 4
C rss

f = 1 MHz 2
2
V GS = 0V

1 0
1 2 3 5 10 20 30 50 0 0.4 0.8 1.2 1.6 2
V DS , DRAIN TO SOURCE VOLTAGE (V) Q g , GATE CHARGE (nC)

Figure 9. Capacitance Characteristics. Figure 10. Gate Charge Characteristics.

VDD t on t off
t d(on) tr t d(off) tf
V IN RL 90% 90%

D V OUT Output, Vout


10% 10%
VGS Inverted
R GEN DUT
90%
G
Input, Vin 50% 50%

10%
S
Pulse Width

Figure 11. Switching Test Circuit. Figure 12. Switching Waveforms.

BS170 Rev. C / MMBF170 Rev. D


Typical Electrical Characteristics (continued)

3 3
2 2
10 10
0u 0u
1 s 1 s
it
Lim 1m it
) Lim

I D , DRAIN CURRENT (A)


1m
ID , DRAIN CURRENT (A)

0.5 ( ON s 0.5 N)
R DS S(
O s
10 RD
ms
10
0m 10
s ms
1s
0.1 0.1
10
10 0m
s 0.05 s
0.05
V GS = 10V DC 1s
SINGLE PULSE V GS = 10V 10
s
SINGLE PULSE DC
T A = 25°C
0.01 0.01 T A = 25°C
0.005 0.005
1 2 5 10 20 30 60 80 1 2 5 10 20 30 60 80
V DS , DRAIN-SOURCE VOLTAGE (V) V DS , DRAIN-SOURCE VOLTAGE (V)

Figure 13. BS170 Maximum Figure 14. MMBF170 Maximum


Safe Operating Area. Safe Operating Area.

1
TRANSIENT THERMAL RESISTANCE

D = 0.5
r(t), NORMALIZED EFFECTIVE

0.5

R θJA (t) = r(t) * R θJA


0.2 R
0.2 θJA = (See Datasheet)

0.1
0.1 P(pk)
0.05
0.05 t1
0.02
t2

TJ - T A = P * Rθ
0.01 JA (t)
0.02 Single Pulse
Duty Cycle, D = t1 /t2

0.01
0.0001 0.001 0.01 0.1 1 10 100 300
t 1, TIME (sec)

Figure 15. TO-92, BS170 Transient Thermal Response Curve.

1
TRANSIENT THERMAL RESISTANCE

0.5 D = 0.5
r(t), NORMALIZED EFFECTIVE

0.2 0.2
R θJA (t) = r(t) * R θJA
0.1 0.1 R
θJA = (See Datasheet)
0.05 0.05

0.02 P(pk)

0.01
0.01 t1
t2
Single Pulse
TJ - T A = P * Rθ
JA (t)
0.002 Duty Cycle, D = t1 /t2

0.001
0.0001 0.001 0.01 0.1 1 10 100 300
t1 , TIME (sec)

Figure 16. SOT-23, MMBF170 Transient Thermal Response Curve.

BS170 Rev. C / MMBF170 Rev. D


TO-92 Tape and Reel Data

TO-92 Packaging
Configuration: Figure 1.0

TAPE and REEL OPTION


FSCINT Label sample See Fig 2.0 for various
FAIRCHILD SEMICONDUCTOR CORPORATION HTB:B Reeling Styles
LOT: CBVK741B019 QTY: 10000

NSID: PN2222N SPEC:


FSCINT
Label
D/C1: D9842 SPEC REV: B2
QA REV:

5 Reels per
(FSCINT) Intermediate Box
Customized
F63TNR Label sample
Label
LOT: CBVK741B019 QTY: 2000 F63TNR
FSID: PN222N SPEC:
Label

D/C1: D9842 QTY1: SPEC REV:


Customized
D/C2: QTY2: CPN:
N/F: F (F63TNR)3 Label
375mm x 267mm x 375mm
Intermediate Box

TO-92 TNR/AMMO PACKING INFROMATION


AMMO PACK OPTION
See Fig 3.0 for 2 Ammo
Packing Style Quantity EOL code
Pack Options
Reel A 2,000 D26Z
E 2,000 D27Z
Ammo M 2,000 D74Z
P 2,000 D75Z

Unit weight = 0.22 gm


FSCINT
Reel weight with components = 1.04 kg Label
Ammo weight with components = 1.02 kg
Max quantity per intermediate box = 10,000 units 5 Ammo boxes per
327mm x 158mm x 135mm
Immediate Box Intermediate Box
Customized
Label
Customized F63TNR
Label Label
333mm x 231mm x 183mm
Intermediate Box

(TO-92) BULK PACKING INFORMATION


BULK OPTION
EOL LEADCLIP See Bulk Packing
DESCRIPTION QUANTITY
CODE DIMENSION Information table
J18Z TO-18 OPTION STD NO LEAD CLIP 2.0 K / BOX
Anti-static
J05Z TO-5 OPTION STD NO LEAD CLIP 1.5 K / BOX Bubble Sheets
FSCINT Label
NO EOL TO-92 STANDARD
NO LEADCLIP 2.0 K / BOX
CODE STRAIGHT FOR: PKG 92,
94 (NON PROELECTRON
SERIES), 96
L34Z TO-92 STANDARD
NO LEADCLIP 2.0 K / BOX
STRAIGHT FOR: PKG 94
(PROELECTRON SERIES 2000 units per 114mm x 102mm x 51mm
BCXXX, BFXXX, BSRXXX), EO70 box for
97, 98 Immediate Box
std option

5 EO70 boxes per


intermediate Box

530mm x 130mm x 83mm Customized


Intermediate box Label

FSCINT Label
10,000 units maximum
per intermediate box
for std option

©2001 Fairchild Semiconductor Corporation March 2001, Rev. B1


TO-92 Tape and Reel Data, continued

TO-92 Reeling Style


Configuration: Figure 2.0

Machine Option “A” (H) Machine Option “E” (J)

Style “A”, D26Z, D70Z (s/h) Style “E”, D27Z, D71Z (s/h)

TO-92 Radial Ammo Packaging


Configuration: Figure 3.0

FIRST WIRE OFF IS COLLECTOR FIRST WIRE OFF IS EMITTER


ADHESIVE TAPE IS ON THE TOP SIDE ADHESIVE TAPE IS ON THE TOP SIDE
FLAT OF TRANSISTOR IS ON TOP FLAT OF TRANSISTOR IS ON BOTTOM

ORDER STYLE ORDER STYLE


D74Z (M) D75Z (P)

FIRST WIRE OFF IS EMITTER (ON PKG. 92) FIRST WIRE OFF IS COLLECTOR (ON PKG. 92)
ADHESIVE TAPE IS ON BOTTOM SIDE ADHESIVE TAPE IS ON BOTTOM SIDE
FLAT OF TRANSISTOR IS ON BOTTOM FLAT OF TRANSISTOR IS ON TOP

September 1999, Rev. B


TO-92 Tape and Reel Data, continued

TO-92 Tape and Reel Taping


Dimension Configuration: Figure 4.0

Hd
P Pd

Ha W1
d S
L
H1 HO
L1
WO t
W2

t1

P1 F1
P2 DO

ITEM DESCRIPTION SYMBOL DIMENSION


PO
Base of Package to Lead Bend b 0.098 (max)
Component Height Ha 0.928 (+/- 0.025)
User Direction of Feed
Lead Clinch Height HO 0.630 (+/- 0.020)
Component Base Height H1 0.748 (+/- 0.020)
Component Alignment ( side/side ) Pd 0.040 (max)
Component Alignment ( front/back ) Hd 0.031 (max)
Component Pitch P 0.500 (+/- 0.020)
Feed Hole Pitch PO 0.500 (+/- 0.008)
Hole Center to First Lead P1 0.150 (+0.009, -0.010)
Hole Center to Component Center P2 0.247 (+/- 0.007)
Lead Spread F1/F2 0.104 (+/- 0 .010)
Lead Thickness d 0.018 (+0.002, -0.003)
Cut Lead Length L 0.429 (max)
Taped Lead Length L1 0.209 (+0.051, -0.052)
Taped Lead Thickness t 0.032 (+/- 0.006)
Carrier Tape Thickness t1 0.021 (+/- 0.006)
Carrier Tape Width W 0.708 (+0.020, -0.019)
TO-92 Reel Hold - down Tape Width WO 0.236 (+/- 0.012)

Configuration: Figure 5.0 Hold - down Tape position W1 0.035 (max)


Feed Hole Position W2 0.360 (+/- 0.025)
Sprocket Hole Diameter DO 0.157 (+0.008, -0.007)
Lead Spring Out S 0.004 (max)

Note : All dimensions are in inches.

ELECT ROSTATIC
SEN SITIVE D EVICES

D4 D1

ITEM DESCRIPTION SYSMBOL MINIMUM MAXIMUM

D2 Reel Diameter D1 13.975 14.025


F63TNR Label
Arbor Hole Diameter (Standard) D2 1.160 1.200
Customized Label (Small Hole) D2 0.650 0.700
Core Diameter D3 3.100 3.300
Hub Recess Inner Diameter D4 2.700 3.100
Hub Recess Depth W1 0.370 0.570
Flange to Flange Inner Width W2 1.630 1.690
W1 Hub to Hub Center Width W3 2.090
W2 W3

Note: All dimensions are inches

D3

July 1999, Rev. A


TO-92 Package Dimensions

TO-92; TO-18 Reverse Lead Form (J35Z Option)


(FS PKG Code 92, 94, 96)

1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]
Part Weight per unit (gram): 0.22

* * ;

Note: All package 97 or 98 transistors are leadformed


to this configuration prior to bulk shipment. Order
L34Z option if in-line leads are preferred on package
97 or 98.

* Standard Option on 97 & 98 package code

©2000 Fairchild Semiconductor International January 2000, Rev. B


SOT-23 Tape and Reel Data

SOT-23 Packaging
Configuration: Figure 1.0

Customized Label Packaging Description:


SOT-23 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
Antistatic Cover Tape 3,000 units per 7" or 177cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 10,000 units per 13"
or 330cm diameter reel. This and some other options are
described in the Packaging Information table.
These full reels are individually labeled and placed inside
a standard intermediate made of recyclable corrugated
brown paper with a Fairchil d logo printing. One pizza box
contains eight reels maximum. And these intermediate
boxes are placed inside a labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Human Readable Embossed
Label Carrier Tape

3P 3P 3P 3P
SOT-23 Packaging Information
Standard
Packaging Option D87Z
(no flow code)
Packaging type TNR TNR SOT-23 Unit Orientation
Qty per Reel/Tube/Bag 3,000 10,000
Reel Size 7" Dia 13"
Box Dimension (mm) 187x107x183 343x343x64
343mm x 342mm x 64mm Human Readable Label
Max qty per Box 24,000 30,000
0.0082 0.0082
Intermediate box for L87Z Option
Weight per unit (gm)
Weight per Reel (kg) 0.1175 0.4006

Note/Comments

Human Readable Label sample

H uman readable
Label
187mm x 107mm x 183mm
SOT-23 Tape Leader and Trailer Intermediate Box for Standard Option
Configuration: Figure 2.0

Carrier Tape

Cover Tape
Components
Trailer Tape Leader Tape
300mm minimum or 500mm minimum or
75 empt y poc kets 125 empty pockets

©2000 Fairchild Semiconductor International September 1999, Rev. C


SOT-23 Tape and Reel Data, continued
SOT-23 Embossed Carrier Tape
Configuration: Figure 3.0
P0 P2 D0 D1
T

E1

F W
E2
B0 Wc

Tc A0
P1
K0
User Direction of Feed

Dimensions are in millimeter

Pkg type A0 B0 W D0 D1 E1 E2 F P1 P0 K0 T Wc Tc

SOT-23 3.15 2.77 8.0 1.55 1.125 1.75 6.25 3.50 4.0 4.0 1.30 0.228 5.2 0.06
(8mm) +/-0.10 +/-0.10 +/-0.3 +/-0.05 +/-0.125 +/-0.10 min +/-0.05 +/-0.1 +/-0.1 +/-0.10 +/-0.013 +/-0.3 +/-0.02

Notes: A0, B0, and K0 dimensions are determined with respect to the EIA/Jedec RS-481
rotational and lateral movement requirements (see sketches A, B, and C). 0.5mm
20 deg maximum maximum

Typical
component
cavity 0.5mm
B0 center line maximum

20 deg maximum component rotation

Typical
Sketch A (Side or Front Sectional View) component Sketch C (Top View)
A0 center line
Component Rotation Component lateral movement
Sketch B (Top View)
SOT-23 Reel Configuration: Figure 4.0 Component Rotation

W1 Measured at Hub

Dim A
Max

Dim A See detail AA


max Dim N

7" Diameter Option


B Min

Dim C

See detail AA
Dim D
W3 min

13" Diameter Option W2 max Measured at Hub

DETAIL AA

Dimensions are in inches and millimeters

Reel
Tape Size Dim A Dim B Dim C Dim D Dim N Dim W1 Dim W2 Dim W3 (LSL-USL)
Option
7.00 0.059 512 +0.020/-0.008 0.795 2.165 0.331 +0.059/-0.000 0.567 0.311 – 0.429
8mm 7" Dia
177.8 1.5 13 +0.5/-0.2 20.2 55 8.4 +1.5/0 14.4 7.9 – 10.9

13.00 0.059 512 +0.020/-0.008 0.795 4.00 0.331 +0.059/-0.000 0.567 0.311 – 0.429
8mm 13" Dia
330 1.5 13 +0.5/-0.2 20.2 100 8.4 +1.5/0 14.4 7.9 – 10.9

September 1999, Rev. C


SOT-23 Package Dimensions

SOT-23 (FS PKG Code 49)

1:1
Scale 1:1 on letter size paper
Dimensions shown below are in:
inches [millimeters]

Part Weight per unit (gram): 0.0082

©2000 Fairchild Semiconductor International September 1998, Rev. A1


TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.

ACEx™ FASTr™ PowerTrench  SyncFET™


Bottomless™ GlobalOptoisolator™ QFET™ TinyLogic™
CoolFET™ GTO™ QS™ UHC™
CROSSVOLT™ HiSeC™ QT Optoelectronics™ VCX™
DOME™ ISOPLANAR™ Quiet Series™
E2CMOSTM MICROWIRE™ SILENT SWITCHER 
EnSignaTM OPTOLOGIC™ SMART START™
FACT™ OPTOPLANAR™ SuperSOT™-3
FACT Quiet Series™ PACMAN™ SuperSOT™-6
FAST  POP™ SuperSOT™-8

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FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER


NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
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failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification Product Status Definition

Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.

Preliminary First Production This datasheet contains preliminary data, and


supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.

No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.

Obsolete Not In Production This datasheet contains specifications on a product


that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.

Rev. G
This datasheet has been download from:

www.datasheetcatalog.com

Datasheets for electronics components.

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