Professional Documents
Culture Documents
M. B. Patil
mbpatil@ee.iitb.ac.in
www.ee.iitb.ac.in/~sequel
i
flow
V pressure
i
flow
V pressure
i
flow
V pressure
i
flow
V pressure
i
flow
V pressure
i
flow
V pressure
i i R = Ron if V > 0
R = Roff if V < 0
V V
i i R = Ron if V > 0
R = Roff if V < 0
V V
* Since the resistance is different in the forward and reverse directions, the i − V
relationship is not symmetric.
i i R = Ron if V > 0
R = Roff if V < 0
V V
* Since the resistance is different in the forward and reverse directions, the i − V
relationship is not symmetric.
* Examples:
i i R = Ron if V > 0
R = Roff if V < 0
V V
* Since the resistance is different in the forward and reverse directions, the i − V
relationship is not symmetric.
* Examples:
10
Ron = 5 Ω Ron = 0.1 Ω
Roff = 500 Ω Roff = 1 MΩ
i (mA)
−5 −4 −3 −2 −1 0 1 −5 −4 −3 −2 −1 0 1
V (Volts) V (Volts)
i i
i i S S closed, V > 0
i
S open, V < 0
V V V V
i i
i i S S closed, V > 0
i
S open, V < 0
V V V V
* V > 0 Volts → S is closed (a perfect contact), and it can ideally carry any
amount of current. The voltage drop across the diode is 0 V .
i i
i i S S closed, V > 0
i
S open, V < 0
V V V V
* V > 0 Volts → S is closed (a perfect contact), and it can ideally carry any
amount of current. The voltage drop across the diode is 0 V .
* V < 0 Volts → S is open (a perfect open circuit), and it can ideally block any
reverse voltage. The current through the diode is 0 A.
i i
i i S S closed, V > 0
i
S open, V < 0
V V V V
* V > 0 Volts → S is closed (a perfect contact), and it can ideally carry any
amount of current. The voltage drop across the diode is 0 V .
* V < 0 Volts → S is open (a perfect open circuit), and it can ideally block any
reverse voltage. The current through the diode is 0 A.
* The actual values of V and i for a diode in a circuit get determined by the i-V
relationship of the diode and the constraints on V and i imposed by the circuit.
i i
p n
V V
» „ « –
V
i = Is exp − 1 , where VT = kB T /q .
VT
i i kB = Boltzmann’s constant = 1.38 × 10−23 J/K .
p n
q = electron charge = 1.602 × 10−19 Coul.
V V
T = temperature in ◦ K .
VT ≈ 25 mV at room temperature (27 ◦ C).
» „ « –
V
i = Is exp − 1 , where VT = kB T /q .
VT
i i kB = Boltzmann’s constant = 1.38 × 10−23 J/K .
p n
q = electron charge = 1.602 × 10−19 Coul.
V V
T = temperature in ◦ K .
VT ≈ 25 mV at room temperature (27 ◦ C).
» „ « –
V
i = Is exp − 1 , where VT = kB T /q .
VT
i i kB = Boltzmann’s constant = 1.38 × 10−23 J/K .
p n
q = electron charge = 1.602 × 10−19 Coul.
V V
T = temperature in ◦ K .
VT ≈ 25 mV at room temperature (27 ◦ C).
» „ « –
V
i = Is exp − 1 , where VT = kB T /q .
VT
i i kB = Boltzmann’s constant = 1.38 × 10−23 J/K .
p n
q = electron charge = 1.602 × 10−19 Coul.
V V
T = temperature in ◦ K .
VT ≈ 25 mV at room temperature (27 ◦ C).
» „ « –
V
i = Is exp − 1 , where VT = kB T /q .
VT
i i kB = Boltzmann’s constant = 1.38 × 10−23 J/K .
p n
q = electron charge = 1.602 × 10−19 Coul.
V V
T = temperature in ◦ K .
VT ≈ 25 mV at room temperature (27 ◦ C).
» „ « –
i
V
i i = Is exp − 1 , where VT = kB T /q .
p n VT
V V
Example: Is = 1 × 10−13 A, VT = 25 mV .
» „ « –
i
V
i i = Is exp − 1 , where VT = kB T /q .
p n VT
V V
Example: Is = 1 × 10−13 A, VT = 25 mV .
V x = V /VT ex i (Amp)
0.1 3.87 0.479×102 0.469×10−11
0.2 7.74 0.229×104 0.229×10−9
0.3 11.6 0.110×106 0.110×10−7
0.4 15.5 0.525×107 0.525×10−6
0.5 19.3 0.251×109 0.251×10−4
0.6 23.2 0.120×1011 0.120×10−2
0.62 24.0 0.260×1011 0.260×10−2
0.64 24.8 0.565×1011 0.565×10−2
0.66 25.5 0.122×1012 0.122×10−1
0.68 26.3 0.265×1012 0.265×10−1
0.70 27.1 0.575×1012 0.575×10−1
0.72 27.8 0.125×1013 0.125
» „ « –
i
V
i i = Is exp − 1 , where VT = kB T /q .
p n VT
V V
Example: Is = 1 × 10−13 A, VT = 25 mV .
V x = V /VT ex i (Amp)
0.479×102
1
0.1 3.87 0.469×10−11 log scale
i (Amp)
0.3 11.6 0.110×106 0.110×10−7 10−6
i (mA)
60
i i h i
p n i = Is eV/VT − 1 , Is = 10−13 A , VT = 25 mV .
V V
Shockley equation and simple models
i i h i
p n i = Is eV/VT − 1 , Is = 10−13 A , VT = 25 mV .
V V
100
Model 1:
Von
80 i
V > Von
60 V < Von
i (mA)
(open circuit)
40 Shockley
equation
20
Von = 0.7 V Model 1
0
0 0.2 0.4 0.6 0.8
V (Volts) Von
Shockley equation and simple models
i i h i
p n i = Is eV/VT − 1 , Is = 10−13 A , VT = 25 mV .
V V
100
Model 1: Model 2:
Von Von Ron
80 i i
V > Von V > Von
i i h i
p n i = Is eV/VT − 1 , Is = 10−13 A , VT = 25 mV .
V V
100
Model 1: Model 2:
Von Von Ron
80 i i
V > Von V > Von
* For many circuits, Model 1 is adequate since Ron is much smaller than other
resistances in the circuit.
i i h i
p n i = Is eV/VT − 1 , Is = 10−13 A , VT = 25 mV .
V V
100
Model 1: Model 2:
Von Von Ron
80 i i
V > Von V > Von
* For many circuits, Model 1 is adequate since Ron is much smaller than other
resistances in the circuit.
* If Von is much smaller than other relevant voltages in the circuit, we can use
Von ≈ 0 V , and the diode model reduces to the ideal diode model seen earlier.
i i h i
p n i = Is eV/VT − 1 , Is = 10−13 A , VT = 25 mV .
V V
100
Model 1: Model 2:
Von Von Ron
80 i i
V > Von V > Von
* For many circuits, Model 1 is adequate since Ron is much smaller than other
resistances in the circuit.
* If Von is much smaller than other relevant voltages in the circuit, we can use
Von ≈ 0 V , and the diode model reduces to the ideal diode model seen earlier.
* Note that the “battery” shown in the above models is not a “source” of power!
It can only absorb power (see the direction of the current), causing heat
dissipation.
M. B. Patil, IIT Bombay
Reverse breakdown
40
i
20
V
i (mA)
0
−20
−6 −5 −4 −3 −2 −1 0 1
V (Volts)
40
i
20
V
i (mA)
0
−20
−6 −5 −4 −3 −2 −1 0 1
V (Volts)
* In the reverse direction, an ideal diode presents a large resistance for any applied
voltage.
40
i
20
V
i (mA)
0
−20
−6 −5 −4 −3 −2 −1 0 1
V (Volts)
* In the reverse direction, an ideal diode presents a large resistance for any applied
voltage.
* A real diode cannot withstand indefinitely large reverse voltages and “breaks
down” at a certain voltage called the “breakdown voltage” (VBR ).
40
i
20
V
i (mA)
0
−20
−6 −5 −4 −3 −2 −1 0 1
V (Volts)
* In the reverse direction, an ideal diode presents a large resistance for any applied
voltage.
* A real diode cannot withstand indefinitely large reverse voltages and “breaks
down” at a certain voltage called the “breakdown voltage” (VBR ).
* When the reverse bias VR > VBR , the diode allows a large amount of current.
If the current is not constrained by the external circuit, the diode would get
damaged.
40
i
20
V
i (mA)
0
Symbol for a Zener diode
−20
−6 −5 −4 −3 −2 −1 0 1
V (Volts)
40
i
20
V
i (mA)
0
Symbol for a Zener diode
−20
−6 −5 −4 −3 −2 −1 0 1
V (Volts)
* A wide variety of diodes is available, with VBR ranging from a few Volts to a few
thousand Volts! Generally, higher the breakdown voltage, higher is the cost.
40
i
20
V
i (mA)
0
Symbol for a Zener diode
−20
−6 −5 −4 −3 −2 −1 0 1
V (Volts)
* A wide variety of diodes is available, with VBR ranging from a few Volts to a few
thousand Volts! Generally, higher the breakdown voltage, higher is the cost.
* Diodes with high VBR are generally used in power electronics applications and
are therefore also designed to carry a large forward current (tens or hundreds of
Amps).
40
i
20
V
i (mA)
0
Symbol for a Zener diode
−20
−6 −5 −4 −3 −2 −1 0 1
V (Volts)
* A wide variety of diodes is available, with VBR ranging from a few Volts to a few
thousand Volts! Generally, higher the breakdown voltage, higher is the cost.
* Diodes with high VBR are generally used in power electronics applications and
are therefore also designed to carry a large forward current (tens or hundreds of
Amps).
* Typically, circuits are designed so that the reverse bias across any diode is less
than the VBR rating for that diode.
40
i
20
V
i (mA)
0
Symbol for a Zener diode
−20
−6 −5 −4 −3 −2 −1 0 1
V (Volts)
* A wide variety of diodes is available, with VBR ranging from a few Volts to a few
thousand Volts! Generally, higher the breakdown voltage, higher is the cost.
* Diodes with high VBR are generally used in power electronics applications and
are therefore also designed to carry a large forward current (tens or hundreds of
Amps).
* Typically, circuits are designed so that the reverse bias across any diode is less
than the VBR rating for that diode.
* “Zener” diodes typically have VBR of a few Volts, which is denoted by VZ . They
are often used to limit the voltage swing in electronic circuits.
Apart from their use as switches, diodes are also used for several other purposes. The
choice of materials used, fabrication techniques, and packaging depend on the
functionality expected from the device.
Apart from their use as switches, diodes are also used for several other purposes. The
choice of materials used, fabrication techniques, and packaging depend on the
functionality expected from the device.
* Light-emitting diodes (LEDs) emit light when a forward bias is applied.
Typically, LEDs are made of III-V semiconductors.
An LED emits light of a specific wavelength (e.g., red, green, yellow, blue).
White LEDs combine individual LEDs that emit the three primary colors (red,
green, blue) or use a phosphor material to convert monochromatic light from a
blue or UV LED to broad-spectrum white light.
Apart from their use as switches, diodes are also used for several other purposes. The
choice of materials used, fabrication techniques, and packaging depend on the
functionality expected from the device.
* Light-emitting diodes (LEDs) emit light when a forward bias is applied.
Typically, LEDs are made of III-V semiconductors.
An LED emits light of a specific wavelength (e.g., red, green, yellow, blue).
White LEDs combine individual LEDs that emit the three primary colors (red,
green, blue) or use a phosphor material to convert monochromatic light from a
blue or UV LED to broad-spectrum white light.
* Semiconductor lasers are essentially light-emitting diodes with structural
modifications that establish conditions for coherent light.
Apart from their use as switches, diodes are also used for several other purposes. The
choice of materials used, fabrication techniques, and packaging depend on the
functionality expected from the device.
* Light-emitting diodes (LEDs) emit light when a forward bias is applied.
Typically, LEDs are made of III-V semiconductors.
An LED emits light of a specific wavelength (e.g., red, green, yellow, blue).
White LEDs combine individual LEDs that emit the three primary colors (red,
green, blue) or use a phosphor material to convert monochromatic light from a
blue or UV LED to broad-spectrum white light.
* Semiconductor lasers are essentially light-emitting diodes with structural
modifications that establish conditions for coherent light.
(source: wikipedia)
* Solar cells are generally silicon diodes designed to generate current efficiently
when solar radiation is incident on the device. A “solar panel” has a large
number of individual solar cells connected in series/parallel configuration.
A solar cell can be modelled as a diode in parallel with a current source
(representing the photocurrent). In addition, parasitic series and shunt
resistances need to be considered.
* Solar cells are generally silicon diodes designed to generate current efficiently
when solar radiation is incident on the device. A “solar panel” has a large
number of individual solar cells connected in series/parallel configuration.
A solar cell can be modelled as a diode in parallel with a current source
(representing the photocurrent). In addition, parasitic series and shunt
resistances need to be considered.
Rseries
p
photo Rshunt
current
* Solar cells are generally silicon diodes designed to generate current efficiently
when solar radiation is incident on the device. A “solar panel” has a large
number of individual solar cells connected in series/parallel configuration.
A solar cell can be modelled as a diode in parallel with a current source
(representing the photocurrent). In addition, parasitic series and shunt
resistances need to be considered.
Rseries
p
photo Rshunt
current
6k A B
ID
R1 D i=?
R2 R3
36 V 1k
3k
VD
0.7 V
C
Diode circuit example
6k A B
ID
R1 D i=?
R2 R3
36 V 1k
3k
VD
0.7 V
C
Case 1: D is off.
6k A B
R1 i
R2 R3
36 V 1k
3k
C
Diode circuit example
6k A B
ID
R1 D i=?
R2 R3
36 V 1k
3k
VD
0.7 V
C
Case 1: D is off.
6k A B
R1 i
R2 R3
36 V 1k
3k
C
3
VAB = VAC = × 36 = 12 V ,
9
which is not consistent with our
assumption of D being off.
Diode circuit example
6k A B
ID
R1 D i=?
R2 R3
36 V 1k
3k
VD
0.7 V
C
Case 1: D is off.
6k A B
R1 i
R2 R3
36 V 1k
3k
C
3
VAB = VAC = × 36 = 12 V ,
9
which is not consistent with our
assumption of D being off.
→ D must be on.
Diode circuit example
6k A B
ID
R1 D i=?
R2 R3
36 V 1k
3k
VD
0.7 V
C
C C
3
VAB = VAC = × 36 = 12 V ,
9
which is not consistent with our
assumption of D being off.
→ D must be on.
Diode circuit example
6k A B
ID
R1 D i=?
R2 R3
36 V 1k
3k
VD
0.7 V
C
C C
3
VAB = VAC = × 36 = 12 V , Taking VC = 0 V,
9
which is not consistent with our VA − 36 VA VA − 0.7
assumption of D being off. + + = 0,
6k 3k 1k
→ D must be on. → VA = 4.47 V, i = 3.77 mA .
Diode circuit example
6k A B
ID
R1 D i=?
R2 R3
36 V 1k
3k
VD
0.7 V
C
C C
3
VAB = VAC = × 36 = 12 V , Taking VC = 0 V,
9
which is not consistent with our VA − 36 VA VA − 0.7
assumption of D being off. + + = 0,
6k 3k 1k
→ D must be on. → VA = 4.47 V, i = 3.77 mA .
R A
1k ID
D1 D2
VD
Vi 1V Vo 0.7 V
R2
0.5 k
R1 (a) Plot Vo versus Vi for −5 V < Vi < 5 V .
1.5 k
i2 (b) Plot Vo (t) for a triangular input:
i1 −5 V to +5 V, 500 Hz .
B
R A
1k ID
D1 D2
VD
Vi 1V Vo 0.7 V
R2
0.5 k
R1 (a) Plot Vo versus Vi for −5 V < Vi < 5 V .
1.5 k
i2 (b) Plot Vo (t) for a triangular input:
i1 −5 V to +5 V, 500 Hz .
B
R A
1k ID
D1 D2
VD
Vi 1V Vo 0.7 V
R2
0.5 k
R1 (a) Plot Vo versus Vi for −5 V < Vi < 5 V .
1.5 k
i2 (b) Plot Vo (t) for a triangular input:
i1 −5 V to +5 V, 500 Hz .
B
R A
1k ID
D1 D2
VD
Vi 1V Vo 0.7 V
R2
0.5 k
R1 (a) Plot Vo versus Vi for −5 V < Vi < 5 V .
1.5 k
i2 (b) Plot Vo (t) for a triangular input:
i1 −5 V to +5 V, 500 Hz .
B
R A
1k ID
D1 D2
VD
Vi 1V Vo 0.7 V
R2
0.5 k
R1 (a) Plot Vo versus Vi for −5 V < Vi < 5 V .
1.5 k
i2 (b) Plot Vo (t) for a triangular input:
i1 −5 V to +5 V, 500 Hz .
B
R A
1k ID
D1 D2
VD
Vi 1V Vo 0.7 V
R2
0.5 k
R1 (a) Plot Vo versus Vi for −5 V < Vi < 5 V .
1.5 k
i2 (b) Plot Vo (t) for a triangular input:
i1 −5 V to +5 V, 500 Hz .
B
R A
* For −0.7 V < Vi < 1.7 V , both D1 and D2 are off.
1k
→ no drop across R, and Vo = Vi . (1)
D1 D2
1V
Vi Vo
R2
0.5 k
R1
1.5 k
i2
i1
R A
* For −0.7 V < Vi < 1.7 V , both D1 and D2 are off.
1k
→ no drop across R, and Vo = Vi . (1)
D1 D2
* For Vi < −0.7 V , D2 conducts. → Vo = −0.7 − i2 R2 .
Use KVL to get i2 : Vi + i2 R2 + 0.7 + Ri2 = 0. 1V
Vi Vo
Vi + 0.7 R2
→ i2 = − , and 0.5 k
R + R2 R1
R2 R 1.5 k
Vo = −0.7 − R2 i2 = Vi − 0.7 . (2) i2
R + R2 R + R2 i1
R A
* For −0.7 V < Vi < 1.7 V , both D1 and D2 are off.
1k
→ no drop across R, and Vo = Vi . (1)
D1 D2
* For Vi < −0.7 V , D2 conducts. → Vo = −0.7 − i2 R2 .
Use KVL to get i2 : Vi + i2 R2 + 0.7 + Ri2 = 0. 1V
Vi Vo
Vi + 0.7 R2
→ i2 = − , and 0.5 k
R + R2 R1
R2 R 1.5 k
Vo = −0.7 − R2 i2 = Vi − 0.7 . (2) i2
R + R2 R + R2 i1
R A
* For −0.7 V < Vi < 1.7 V , both D1 and D2 are off.
1k
→ no drop across R, and Vo = Vi . (1)
D1 D2
* For Vi < −0.7 V , D2 conducts. → Vo = −0.7 − i2 R2 .
Use KVL to get i2 : Vi + i2 R2 + 0.7 + Ri2 = 0. 1V
Vi Vo
Vi + 0.7 R2
→ i2 = − , and 0.5 k
R + R2 R1
R2 R 1.5 k
Vo = −0.7 − R2 i2 = Vi − 0.7 . (2) i2
R + R2 R + R2 i1
R A
* For −0.7 V < Vi < 1.7 V , both D1 and D2 are off.
1k
→ no drop across R, and Vo = Vi . (1)
D1 D2
* For Vi < −0.7 V , D2 conducts. → Vo = −0.7 − i2 R2 .
Use KVL to get i2 : Vi + i2 R2 + 0.7 + Ri2 = 0. 1V
Vi Vo
Vi + 0.7 R2
→ i2 = − , and 0.5 k
R + R2 R1
R2 R 1.5 k
Vo = −0.7 − R2 i2 = Vi − 0.7 . (2) i2
R + R2 R + R2 i1
−5
−5 0 5 Vi
−0.7 1.7
Vi 1V Vo 0 0
R2
0.5 k
R1
1.5 k
i2
i1
B −5 −5
−5 0 5 Vi 0 t1 1 t2 2 t (msec)
−5 0 5 0 1 2
Point-by-point construction of
0
0
Vi t (msec)
Vo versus t:
Two time points, t1 and t2,
are shown as examples.
0.5
1
1
1.5
2 t (msec)
2 t (msec)
1k
ID
R1
Vi R2 Vo
0.5 k
VD
0.7 V
Plot Vo versus Vi for −5 V < Vi < 5 V .
Diode circuit example
D
0.7 V
1k
ID
R1 R1
Vi R2 Vo Vi R2 Vo
0.5 k
VD
0.7 V
D on
Plot Vo versus Vi for −5 V < Vi < 5 V . Vo = Vi − 0.7
Diode circuit example
D VD
0.7 V
1k
ID
R1 R1 R1
Vi R2 Vo Vi R2 Vo Vi R2 Vo
0.5 k
VD
0.7 V
D on D off
Plot Vo versus Vi for −5 V < Vi < 5 V . Vo = Vi − 0.7 R2
Vo = Vi
R1 + R2
D VD
0.7 V
1k
ID
R1 R1 R1
Vi R2 Vo Vi R2 Vo Vi R2 Vo
0.5 k
VD
0.7 V
D on D off
Plot Vo versus Vi for −5 V < Vi < 5 V . Vo = Vi − 0.7 R2
Vo = Vi
R1 + R2
D VD
0.7 V
1k
ID
R1 R1 R1
Vi R2 Vo Vi R2 Vo Vi R2 Vo
0.5 k
VD
0.7 V
D on D off
Plot Vo versus Vi for −5 V < Vi < 5 V . Vo = Vi − 0.7 R2
Vo = Vi
R1 + R2
D VD
0.7 V
1k
ID
R1 R1 R1
Vi R2 Vo Vi R2 Vo Vi R2 Vo
0.5 k
VD
0.7 V
D on D off
Plot Vo versus Vi for −5 V < Vi < 5 V . Vo = Vi − 0.7 R2
Vo = Vi
R1 + R2
D VD
0.7 V
1k
ID
R1 R1 R1
Vi R2 Vo Vi R2 Vo Vi R2 Vo
0.5 k
VD
0.7 V
D on D off
Plot Vo versus Vi for −5 V < Vi < 5 V . Vo = Vi − 0.7 R2
Vo = Vi
R1 + R2
D VD
0.7 V
1k
ID
R1 R1 R1
Vi R2 Vo Vi R2 Vo Vi R2 Vo
0.5 k
VD
0.7 V
D on D off
Plot Vo versus Vi for −5 V < Vi < 5 V . Vo = Vi − 0.7 R2
Vo = Vi
R1 + R2
Vo
5
At what value of Vi will the diode turn on?
R1
In the off state, VD = Vi .
R1 + R2
For D to change to the on state, VD = 0.7 V .
0
R1 + R2
i.e., Vi = × 0.7 = 1.05 V .
R1
D off D on
(SEQUEL file: ee101 diode circuit 2.sqproj)
−5
−5 0 5 Vi
1.05
D1 D2
R1
1k
Vi R2 Vo
1k
Von = 0.7 V, VZ = 5 V.
Plot Vo versus Vi .
Diode circuit example
D1 D2
R1
1k
Vi R2 Vo
1k
Von = 0.7 V, VZ = 5 V.
Plot Vo versus Vi .
R1
1k
i 0.7 V 5V
Vi R2 Vo
1k
Vi − 5.7
Vo = i R2 = R2
R1 + R2
Since i > 0, this can happen only when Vi > 5.7 V.
Diode circuit example
D1 D2
R1
1k
Vi R2 Vo
1k
Von = 0.7 V, VZ = 5 V.
Plot Vo versus Vi .
R1 R1
1k i 1k
i 0.7 V 5V 5V 0.7 V
Vi R2 Vo Vi R2 Vo
1k 1k
Vi − 5.7 Vi + 5.7
Vo = i R2 = R2 Vo = −i R2 = R2
R1 + R2 R1 + R2
Since i > 0, this can happen only when Vi > 5.7 V. Since i > 0, this can happen only when Vi < -5.7 V.
Diode circuit example
Vo
D1 D2 1.5
R1
1k
Vi R2 Vo 0
1k
−1.5
Von = 0.7 V, VZ = 5 V. −8 −4 0 4 8 Vi
Plot Vo versus Vi . D1 r.b. D1 r.b. D2 r.b. D2 r.b.
(breakdown) (breakdown)
R1 R1
1k i 1k
i 0.7 V 5V 5V 0.7 V
Vi R2 Vo Vi R2 Vo
1k 1k
Vi − 5.7 Vi + 5.7
Vo = i R2 = R2 Vo = −i R2 = R2
R1 + R2 R1 + R2
Since i > 0, this can happen only when Vi > 5.7 V. Since i > 0, this can happen only when Vi < -5.7 V.
D1 D2 1.5
R1
1k
Vi R2 Vo 0
1k
−1.5
Von = 0.7 V, VZ = 5 V. −8 −4 0 4 8 Vi
Plot Vo versus Vi . D1 r.b. D1 r.b. D2 r.b. D2 r.b.
(breakdown) (breakdown)
R1 R1
1k i 1k
i 0.7 V 5V 5V 0.7 V
Vi R2 Vo Vi R2 Vo
1k 1k
Vi − 5.7 Vi + 5.7
Vo = i R2 = R2 Vo = −i R2 = R2
R1 + R2 R1 + R2
Since i > 0, this can happen only when Vi > 5.7 V. Since i > 0, this can happen only when Vi < -5.7 V.
1k
D1
Vi Vo
D2
Von = 0.7 V, VZ = 5 V.
Plot Vo versus Vi .
Diode circuit example (voltage limiter)
R
1k
D1
Vi Vo
D2
Von = 0.7 V, VZ = 5 V.
Plot Vo versus Vi .
R
1k
i
D1
0.7 V Vo = 5.7 V
Vi C Vo
Vi > 5.7 V
D2
5V
Diode circuit example (voltage limiter)
R
1k
D1
Vi Vo
D2
Von = 0.7 V, VZ = 5 V.
Plot Vo versus Vi .
R R
1k 1k
i i
D1 D1
0.7 V Vo = 5.7 V 5V Vo = −5.7 V
Vi C Vo Vi A Vo
Vi > 5.7 V Vi < −5.7 V
D2 D2
5V 0.7 V
Diode circuit example (voltage limiter)
R
1k
D1
Vi Vo
D2
Von = 0.7 V, VZ = 5 V.
Plot Vo versus Vi .
R R
1k 1k
i i
D1 D1
0.7 V Vo = 5.7 V 5V Vo = −5.7 V
Vi C Vo Vi A Vo
Vi > 5.7 V Vi < −5.7 V
D2 D2
5V 0.7 V
D1 4
Vi Vo
D2 0
−4
Von = 0.7 V, VZ = 5 V.
A B C
Plot Vo versus Vi . −8
−8 −4 0 4 8 Vi
R R
1k 1k
i i
D1 D1
0.7 V Vo = 5.7 V 5V Vo = −5.7 V
Vi C Vo Vi A Vo
Vi > 5.7 V Vi < −5.7 V
D2 D2
5V 0.7 V
10
Vo (V)
D 0
Vi C Vo
Vi (V)
-10
0 1 2
time (msec)
10
Vo (V)
D 0
Vi C Vo
Vi (V)
-10
0 1 2
time (msec)
10
Vo (V)
D 0
Vi C Vo
Vi (V)
-10
0 1 2
time (msec)
10
Vo (V)
D 0
Vi C Vo
Vi (V)
-10
0 1 2
time (msec)
10
Vo (V)
D 0
Vi C Vo
Vi (V)
-10
0 1 2
time (msec)
10
Vo (V)
D 0
Vi C Vo
Vi (V)
-10
0 1 2
time (msec)
10
Vo (V)
D 0
C R
Vi 5k Vo
1 µF Vi (V)
-10
0 1 2
time (msec)
10
Vo (V)
D 0
C R
Vi 5k Vo
1 µF Vi (V)
-10
0 1 2
time (msec)
If a resistor is added in parallel, a discharging path is provided for the capacitor, and
the capacitor voltage falls after reaching the peak.
10
Vo (V)
D 0
C R
Vi 5k Vo
1 µF Vi (V)
-10
0 1 2
time (msec)
If a resistor is added in parallel, a discharging path is provided for the capacitor, and
the capacitor voltage falls after reaching the peak.
When Vi > Vo , the capacitor charges again. The time constant for the charging
process is τ = RTh C , where RTh = R k Ron is the Thevenin resistance seen by the
capacitor, Ron being the on resistance of the diode.
10
Vo (V)
D 0
C R
Vi 5k Vo
1 µF Vi (V)
-10
0 1 2
time (msec)
If a resistor is added in parallel, a discharging path is provided for the capacitor, and
the capacitor voltage falls after reaching the peak.
When Vi > Vo , the capacitor charges again. The time constant for the charging
process is τ = RTh C , where RTh = R k Ron is the Thevenin resistance seen by the
capacitor, Ron being the on resistance of the diode.
Since τ T , the charging process is instantaneous.
10
Vo (V)
D 0
C R
Vi 5k Vo
1 µF Vi (V)
-10
0 1 2
time (msec)
If a resistor is added in parallel, a discharging path is provided for the capacitor, and
the capacitor voltage falls after reaching the peak.
When Vi > Vo , the capacitor charges again. The time constant for the charging
process is τ = RTh C , where RTh = R k Ron is the Thevenin resistance seen by the
capacitor, Ron being the on resistance of the diode.
Since τ T , the charging process is instantaneous.
10
Vo (V)
Vi (V)
R = 1M
-10
D
C R Vo 10
Vi
1 µF
Vo (V)
Vi (V)
R = 5k
-10
0 1 2
time (msec)
10
Vo (V)
Vi (V)
R = 1M
-10
D
C R Vo 10
Vi
1 µF
Vo (V)
Vi (V)
R = 5k
-10
0 1 2
time (msec)
10
Vo (V)
Vi (V)
R = 1M
-10
D
C R Vo 10
Vi
1 µF
Vo (V)
Vi (V)
R = 5k
-10
0 1 2
time (msec)
10
Vo (V)
Vi (V)
R = 1M
-10
D
C R Vo 10
Vi
1 µF
Vo (V)
Vi (V)
R = 5k
-10
0 1 2
time (msec)
VC 20
Vo
C 10
VC
Vi D Vo
iD 0
Vi
0 0.5 1 1.5 2
time (msec)
VC 20
Vo
C 10
VC
Vi D Vo
iD 0
Vi
0 0.5 1 1.5 2
time (msec)
VC 20
Vo
C 10
VC
Vi D Vo
iD 0
Vi
0 0.5 1 1.5 2
time (msec)
VC 20
Vo
C 10
VC
Vi D Vo
iD 0
Vi
0 0.5 1 1.5 2
time (msec)
VC 20
Vo
C 10
VC
Vi D Vo
iD 0
Vi
0 0.5 1 1.5 2
time (msec)
VC1
A B C
C1 D2 VA
D1 C2 R VB
100 k
VC
10 10
0 0
−10 −10
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
time (msec) time (msec)
VC1
A B C
C1 D2 VA
D1 C2 R VB
100 k
VC
10 10
0 0
−10 −10
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
time (msec) time (msec)
* The diode clamp shifts VA up by Vm (the amplitude of the AC source), making VB go from
0 to 2 Vm .
VC1
A B C
C1 D2 VA
D1 C2 R VB
100 k
VC
10 10
0 0
−10 −10
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
time (msec) time (msec)
* The diode clamp shifts VA up by Vm (the amplitude of the AC source), making VB go from
0 to 2 Vm .
* The peak detector detects the peak of VB (2 Vm w.r.t. ground), and holds it constant.
VC1
A B C
C1 D2 VA
D1 C2 R VB
100 k
VC
10 10
0 0
−10 −10
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
time (msec) time (msec)
* The diode clamp shifts VA up by Vm (the amplitude of the AC source), making VB go from
0 to 2 Vm .
* The peak detector detects the peak of VB (2 Vm w.r.t. ground), and holds it constant.
* Note that it takes a few cycles to reach steady state. Plot VC 1 , iD1 , iD2 versus t and explain
the initial behaviour of the circuit.
VC1
A B C
C1 D2 VA
D1 C2 R VB
100 k
VC
10 10
0 0
−10 −10
0 1 2 3 4 5 6 7 8 9 10 0 1 2 3 4 5 6 7 8 9 10
time (msec) time (msec)
* The diode clamp shifts VA up by Vm (the amplitude of the AC source), making VB go from
0 to 2 Vm .
* The peak detector detects the peak of VB (2 Vm w.r.t. ground), and holds it constant.
* Note that it takes a few cycles to reach steady state. Plot VC 1 , iD1 , iD2 versus t and explain
the initial behaviour of the circuit.
(SEQUEL file: ee101 voltage doubler.sqproj)
M. B. Patil, IIT Bombay