Republic of the Philippines

Batangas State University

Pablo Borbon Main II
Alangilan, Batangas City

ECE 303- Electronic Circuit Analysis And Design

Laboratory Activity No. 2
Transistors Characteristics And Bias

Submitted By:
Group No. 7
Aguado, Camelle Joy
Gapas, Christopher
Ramos, Manilyn Joy P.

Submitted To:
Engr, Antonette V. Chua
Instructor
I.Introduction

Transistors are the active component in various devices like amplifiers and
oscillators. They are called active devices since transistors are capable of amplifying (or
making larger) signals. The properties of transistors will be studied in this module so
basically the focus here is understanding how transistors work. The next module will
focus on basic amplifier design. Transistors can also be used as switches but since this is
not a course in digital electronics, we will not discuss the function of transistors.

II. Material Components

A) Power Supply
B) DMM

III. Procedures

BJT Output Characteristics

1. Construct the circuit shown in Figure 1. The resistors R1 and R2 are used to vary
the values of IB and IC, respectively.
2. Vary R1 to fix the base current to 5µA, then vary R2 to change the value of VCE.
3. Record the values of IC for the values of VCE = 0V up to VCE = 18V at an
increment of 0.5V.
4. Plot the collector current versus the collector-to-emitter voltage.
5. Repeat the steps with IB = 5µA up to IB = 50µA at a 5µA increment.

Operating Points of a BJT Amplifier

1. Construct the circuit shown in Figure 2.
2. Measure the base current.
3. Plot the output characteristics of the transistor using the measured base current.
4. Plot the DC load line, i.e. using RC then model VCE as a voltage supply, in the
same plot as the output characteristics of the transistor. Vary VCE (0.5V
increment) and record the current across RC.
5. Identify the intersection of the two plots; this is the operating points of the circuit.
6. Using a DMM, measure the operating points of Figure 2.
7. Record the measurements.
Transistor Bias Circuit

1. Construct a fixed-bias circuit using general purpose transistor. VCC = 15V, RB =

1MΩ, RC = 2.7kΩ.
2. Measure the operating points IB, VBE, IC, and VCE.
3. Calculate β from the measurements.
β = IC/IB
4. Record the measurements.
5. Repeat the steps 1-4 for an emitter bias circuit using general purpose transistor.
VCC = 15V, RB = 1MΩ, RC = 2.2kΩ, RE = 2.2kΩ.
6. Repeat the steps 1-4 again for a voltage-divider bias circuit using general purpose
transistor. VCC = 15V, R1 = 33kΩ, R2= 6.8kΩ, RC = 1.8kΩ, RE = 0.68kΩ.
7. Repeat the steps 1-4 for common-base configuration using general purpose
transistor. VCC = 15V, VEE = -15V, RC = 2.2kΩ, RE = 2.2kΩ.
8. Repeat steps 1-7 using higher beta transistor.
9. Calculate the differences in measurements for IB, VBE, IC, VCE, and β.

FET Output and Transfer Characteristics

1. Construct the circuit shown in Figure 3.
2. Vary R1 so that VGS = 0V.
3. Measure and record ID at every 0.25V of VDS, stops measuring once IG becomes
almost constant. This ID is the maximum drain to source saturation current, IDSS.
4. Record the values at which ID becomes constant, these are saturation current for
an input voltage VGS.
5. Repeat steps 2-4 with an 0.5V decrement in VGS. Stop when ID is almost zero (µA
range). Record VGS, this is now the estimated pinch-off voltage.
6. Plot the saturation currents with respect to VGS.
7. Using Shockley’s equation, plot the transfer relations and compare the plot with
the plot from step 6.
8. Repeat the process for a D-MOSFET. Vary VGS from 0 to 2V, at an increment of
0.5V.
9. Repeat the process for an E-MOSFET, start with VGS = 0 incremented at 0.5V.
record the voltage at which the current starts flowing. This is the threshold
voltage. Stop at VGS = 8V. Note: kl can be determined by using any point in the
transfer curve.

FET Bias Circuits

1. Test a FET for its parameters. (use a general purpose JFET)
 2. Construct a JFET fixed-bias circuit. VDD = 15V, RD = 1kΩ. use a voltage divider
(potentiometer) to have VGS at -1V.
3. Measure the operating points.
4. Plot the circuits input characteristics in the transfer curve of the transistor.
5. Repeat steps 3-4 for a self-bias circuit. VDD = 15V, RD = 1kΩ, RS = 1.2kΩ, RG =
1MΩ.
6. Repeat the steps 3-4 for a voltage divider bias. VDD = 15v, R1 = 10kΩ, R2 = 3kΩ,
RD = 1kΩ, RS = 1.2kΩ.

IV. Data And Results

BJT Output Characteristics

@5uA
IC (uA) VCE (V)
602.185 1.64m
606.182 2.123
606.734 2.586
613.731 3.079
617.284 3.537
621.725 4.088
625.278 4.593
629.718 5.051
635.936 5.942
641.265 6.535
644.818 7.074
650.147 7.624
653.699 8.105
657.252 8.602
660.805 9.1
666.134 9.736
671.463 10.276
675.016 10.725
678.568 11.183
683.897 11.77
687.45 12.254
691.003 12.744
696.332 13.247
701.661 13.896
703.437 14.296

@10uA

IC (uA) VCE (V)

1.284 539.436m
1.294 1.097
1.302 1.558
1.31 2.057
1.318 2.503
1.328 3.07
1.337 3.575
1.344 4.001
1.354 4.558
1.362 5.025
1.37 5.51
1.379 6.015
1.388 6.543
1.398 7.094
1.405 7.519
1.414 8.105
1.425 8.561
1.434 9.188
1.441 9.513
1.45 10.009
1.457 10.52
1.465 11.043
1.476 11.583
1.485 12.134
1.496 12.707
1.506 13.29

@15uA

IC (uA) VCE (V)

2.117 536.691m
2.132 1.058
2.143 1.467
2.16 2.04
2.172 2.49
2.191 3.117
2.205 3.613
2.22 4.124
2.235 4.655
2.251 5.207
2.268 5.78
2.278 6.173
2.29 6.577
2.308 7.201
2.321 7.63
2.332 8.071
2.345 8.521
2.364 9.216
2.38 9.693
2.395 10.182
2.407 10.683
2.423 11.197
2.439 11.273
2.453 12.263

@20uA

IC (uA) VCE (V)

3.018 544.083
3.043 1.146
3.06 1.562
3.077 1.99
3.096 2.432
3.114 3.118
3.143 3.592
3.163 4.081
3.183 4.584
3.205 5.099
3.227 5.633
3.249 6.18
3.271 6.743
3.308 7.62
 3.332 8.227
3.345 8.535
3.37 9.167
3.398 9.818
3.425 10.488
3.453 11.278
3.466 11.532
3.466 11.532

@25uA

IC (uA) VCE (V)

3.861 520.632m
3.889 1.052
3.917 1.601
3.947 2.167
3.978 2.752
4.01 3.357
4.041 3.982
4.059 4.3
4.093 4.955
4.128 5.632
4.165 6.33
4.203 7.052
4.241 7.797
4.261 8.181
4.381 8.568
4.324 9.364
4.366 10.188
4.388 10.611

@30uA

IC (mA) VCE (V)

4.646 590.198m
4.688 1.248
4.73 1.931
4.752 2.281
4.798 3
4.821 3.398
4.845 3.745
4.869 4.126
4.893 4.515
4.918 4.911
4.969 5.725
4.995 6.142
5.022 6.568
5.049 7.003
5.077 7.443
5.105 7.894
5.315 8.35
5.194 9.291
5.222 9.776
 @35uA

IC (uA) VCE (V)

5.522 149.464m
5.982 1.235
5.612 1.643
5.643 2.061
5.675 2.486
5.708 2.919
5.741 3.361
5.775 3.812
5.81 4.271
5.844 4.739
5.88 5.218
5.916 5.707
5.954 6.203
5.992 6.712
6.032 7.22
6.07 7.758
6.111 8.296
6.152 8.848

@40uA

IC (uA) VCE (V)

5.557 494.658m
5.594 1.018
5.596 1.58
5.598 2.157
5.6 2.541
5.613 3.105
5.615 3.498
5.619 4.095
5.621 4.495
5.624 5.103
5.627 5.514
5.63 6.153
5.633 6.553
5.635 7.86
5.639 7.61
6.64 8.04
5.645 8.692
5.649 9.13

OPERATING POINTS OF BJT AMPLIFIER

VCE (V) IRC

0 4.545mA
0.5 4.394mA
1 4.242mA
1.5 4.091mA
2 3.939mA
2.5 3.788mA
3 3.636mA
3.5 3.485mA
 4 3.333mA
4.5 3.182mA
5 3.03mA
5.5 2.879mA
6 2.727mA
6.5 2.576mA
7 2.424mA
7.5 2.273mA
8 2.121mA
8.5 1.97mA
9 1.818mA
9.5 1.667mA
10 1.515mA
10.5 1.364Ma
11 1.212mA
11.5 1.061Ma
12 909.091Ua
12.5 757.576uA
13 606.061uA
13.5 454.546uA
14 303.03uA
14.5 151.515uA
15 0A
Transistor Bias Circuits

Using General Purpose Transistor

Fixed Bias Emitter Bias Voltage Divider Common Base

Circuit Circuit Circuit Configuration
IB 10.325uA 7.994uA 8.81uA 31.183uA
VB 657.427mV 639.605mV 642.491mV 677.535mV
E
IC 2.283mA 1.673mA 1.902mA 6.479mA
VC 8.836V 7.619V 9.704V 1.424V
E
β

Fixed Bias Circuit Common Emitter Bias Circuit

Voltage Divider Bias Common Base Configuration

Using a Higher Beta Transistor

Fixed Bias Emitter Bias Voltage Divider Common Base

IB 10.325uA 7.105uA 4.885uA 17.061uA
VBE 685.344mV 671.727mV 661.861mV 699.824mV
IC 4.063mA 2.448mA 1.776mA 6.483mA
VCE 4.032V 4.215V 15V 1.437V
β
Fixed Bias Circuit Voltage Divider Bias

Common Base Circuit Common Emitter Circuit

FET Output and Transfer Characteristics

(By 250)
(By 500)