SPW17N80C3

Cool MOS™ Power Transistor VDS 800 V

Feature RDS(on) 0.29 Ω
• New revolutionary high voltage technology ID 17 A
• Worldwide best RDS(on) in TO 247
• Ultra low gate charge P-TO247

• Periodic avalanche rated

• Extreme dv/dt rated

Type Package Ordering Code Marking

SPW17N80C3 P-TO247 Q67040-S4359 17N80C3

Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current ID A
TC = 25 °C 17
TC = 100 °C 11
Pulsed drain current, tp limited by Tjmax I D puls 51
Avalanche energy, single pulse EAS 670 mJ
I D = 3.4 A, VDD = 50 V
Avalanche energy, repetitive tAR limited by Tjmax1) EAR 0.5
I D = 17 A, VDD = 50 V
Avalanche current, repetitive tAR limited by Tjmax I AR 17 A
Gate source voltage VGS ±20 V
Gate source voltage AC (f >1Hz) VGS ±30
Power dissipation, T C = 25°C Ptot 208 W
Operating and storage temperature T j , T stg -55... +150 °C

Rev. 2.1 Page 1 2004-03-03

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Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope dv/dt 50 V/ns
V DS = 640 V, ID = 17 A, Tj = 125 °C

Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case RthJC - - 0.6 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
Soldering temperature, Tsold - - 260 °C
1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage V(BR)DSS VGS=0V, ID=0.25mA 800 - - V
Drain-Source avalanche V(BR)DS VGS=0V, ID=17A - 870 -
breakdown voltage
Gate threshold voltage VGS(th) ID=1000µΑ, VGS=VDS 2.1 3 3.9
Zero gate voltage drain current IDSS VDS=800V, VGS=0V, µA
Tj=25°C, - 0.5 25
Tj=150°C - - 250
Gate-source leakage current IGSS VGS=20V, VDS=0V - - 100 nA
Drain-source on-state resistance RDS(on) VGS=10V, ID=11A, Ω
Tj=25°C - 0.25 0.29
Tj=150°C - 0.78 -
Gate input resistance RG f=1MHz, open Drain - 0.7 -

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Electrical Characteristics , at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance g fs V DS≥2*I D*RDS(on)max, - 15 - S
ID=11A

Input capacitance Ciss V GS=0V, V DS=25V, - 2320 - pF

Output capacitance Coss f=1MHz - 1250 -
Reverse transfer capacitance Crss - 60 -
Effective output capacitance, 2) Co(er) V GS=0V, - 59 - pF
energy related V DS=0V to 480V

Effective output capacitance, 3) Co(tr) - 124 -

time related
Turn-on delay time td(on) V DD=400V, V GS=0/10V, - 25 - ns
Rise time tr ID=17A, RG =4.7Ω, - 15 -
Turn-off delay time td(off) Tj=125°C - 72 82
Fall time tf - 6 9

Gate Charge Characteristics

Gate to source charge Qgs VDD=640V, ID=17A - 12 - nC
Gate to drain charge Qgd - 46 -
Gate charge total Qg VDD=640V, ID=17A, - 91 177
VGS=0 to 10V

Gate plateau voltage V(plateau) VDD=640V, ID=17A - 6 - V

1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f.
AV
2C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS.
3C
o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS.

Rev. 2.1 Page 3 2004-03-03

 SPW17N80C3

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit
min. typ. max.
Inverse diode continuous IS TC=25°C - - 17 A
forward current
Inverse diode direct current, ISM - - 51
pulsed
Inverse diode forward voltage VSD VGS=0V, IF=IS - 1 1.2 V
Reverse recovery time trr VR=400V, IF=IS , - 550 - ns
Reverse recovery charge Qrr diF/dt=100A/µs - 15 - µC
Peak reverse recovery current Irrm - 51 - A
Peak rate of fall of reverse dirr /dt - 1200 - A/µs
recovery current

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance Thermal capacitance
R th1 0.00812 K/W Cth1 0.0003562 Ws/K
R th2 0.016 Cth2 0.001337
R th3 0.031 Cth3 0.001831
R th4 0.114 Cth4 0.005033
R th5 0.135 Cth5 0.012
R th6 0.059 Cth6 0.092

Tj E xternal H eatsink
R th1 R th,n T case
P tot (t)

C th1 C th2 C th,n

T am b

Rev. 2.1 Page 4 2004-03-03

 SPW17N80C3

1 Power dissipation 2 Safe operating area

Ptot = f (TC) ID = f ( V DS )
parameter : D = 0 , T C=25°C
240
SPW17N80C3 10 2
W A

200

180 10 1

160
Ptot

ID
140

120 10 0
tp = 0.001 ms
100 tp = 0.01 ms
tp = 0.1 ms
80 tp = 1 ms
DC
60 10 -1

40

20

0 10 -2 0 1 2 3
0 20 40 60 80 100 120 °C 160 10 10 10 V 10
TC VDS

3 Transient thermal impedance 4 Typ. output characteristic

ZthJC = f (t p) ID = f (VDS); Tj=25°C
parameter: D = tp/T parameter: tp = 10 µs, VGS
1
10
70
K/W A
20V
60 10V
10 0
55

50
ZthJC

45
ID

10 -1 8V
40

35 7V

10 -2 D = 0.5 30
D = 0.2
25 6V
D = 0.1
D = 0.05 20
D = 0.02
10 -3 D = 0.01 15
single pulse 10 5V

5
10 -4 -7 -6 -5 -4 -3 -1 0
10 10 10 10 10 s 10 0 5 10 15 20 VDS 30
tp V

Rev. 2.1 Page 5 2004-03-03

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5 Typ. output characteristic 6 Typ. drain-source on resistance

ID = f (VDS); Tj=150°C RDS(on)=f(ID)
parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS
35 1.5
20V
Ω
A 10V
8V
7V 1.3

RDS(on)
25 6.5V 1.2
6V
ID

4V 4.5V 5V 5.5V 6V
1.1 6.5V
20

1
5.5V
15
0.9

5V
10 0.8 7V
8V
4.5V 0.7 10V
20V
5
4V 0.6

0 0.5
0 5 10 15 20 VDS 30 0 5 10 15 20 25 A 35
V ID

7 Drain-source on-state resistance 8 Typ. transfer characteristics

RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max
parameter : ID = 11 A, VGS = 10 V parameter: tp = 10 µs
SPW17N80C3
1.6 65
A
Ω
25°C
55

50
1.2
RDS(on)

45
ID

1 40

35
150°C
0.8
30

0.6 25

20
0.4 98% 15
typ
10
0.2
5

0 0
-60 -20 20 60 100 °C 180 0 2 4 6 8 10 12 14 16 V 20
Tj VGS

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9 Typ. gate charge 10 Forward characteristics of body diode

VGS = f (QGate) IF = f (VSD)
parameter: ID = 17 A pulsed parameter: Tj , tp = 10 µs
16
SPW17N80C3
10 2 SPW17N80C3

V
A

12
0.2 VDS max
10 1
VGS

10 0.8 VDS max

IF
8

6
10 0
Tj = 25 °C typ
4
Tj = 150 °C typ
Tj = 25 °C (98%)
2 Tj = 150 °C (98%)

0 10 -1
0 20 40 60 80 100 120 nC 160 0 0.4 0.8 1.2 1.6 2 2.4 V 3
QGate VSD

11 Avalanche SOA 12 Avalanche energy

IAR = f (tAR) EAS = f (Tj)
par.: Tj ≤ 150 °C par.: ID = 3.4 A, V DD = 50 V
18 700
mJ
A
600

14 550

500
EAS

12
IAR

450

10 400

350
8
300

250
6
Tj (START) =25°C 200
4 150

100
2 Tj (START) =125°C
50

0 -3 -2 -1 0 1 2 4 0
10 10 10 10 10 10 µs 10 25 50 75 100 °C 150
tAR Tj

Rev. 2.1 Page 7 2004-03-03

 SPW17N80C3

13 Drain-source breakdown voltage 14 Avalanche power losses

V(BR)DSS = f (Tj) PAR = f (f )
parameter: E AR=0.5mJ
SPW17N80C3
980 500
V W

940
400
920
V(BR)DSS

900 350

PAR
880 300
860
250
840

820 200

800 150

780
100
760
50
740

720 0 4 5 6
-60 -20 20 60 100 °C 180 10 10 Hz 10
Tj f

15 Typ. capacitances 16 Typ. Coss stored energy

C = f (VDS) Eoss=f(VDS)
parameter: V GS=0V, f=1 MHz
10 5 18
pF
µJ

10 4
14
Ciss
Eoss

12
10 3
C

10

8
10 2 Coss

10 1 Crss 4

10 0 0
0 100 200 300 400 500 600 V 800 0 100 200 300 400 500 600 V 800
VDS VDS

Rev. 2.1 Page 8 2004-03-03

 SPW17N80C3

Definition of diodes switching characteristics

Rev. 2.1 Page 9 2004-03-03

 SPW17N80C3

P-TO-247-3-1
15.9
6.35 5.03
ø3.61 2.03

4.37

20˚
5.94
6.17
9.91
20.9

D 7 5˚

2.97 x 0.127

41.22
1.75

D
16

1.14
0.243
1.2 0.762 MAX.
2 2.4 +0.05
2.92
5.46

General tolerance unless otherwise specified: Leadframe parts: ±0.05

Package parts: ±0.12

Rev. 2.1 Page 10 2004-03-03

 SPW17N80C3

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Infineon Technologies AG,
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D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

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For further information on technology, delivery terms and conditions and prices please contact your nearest
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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
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Rev. 2.1 Page 11 2004-03-03

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