AO4712

30V N-Channel MOSFET

SRFET TM

General Description Product Summary

SRFETTM AO4712 uses advanced trench technology with VDS 30V

a monolithically integrated Schottky diode to provide ID (at VGS=10V) 13A
excellent RDS(ON),and low gate charge. This device is RDS(ON) (at VGS=10V) < 11mΩ
suitable for use as a low side FET in SMPS, load RDS(ON) (at VGS = 4.5V) < 14mΩ
switching and general purpose applications.

100% UIS Tested

100% Rg Tested

SOIC-8
D
Top View Bottom View
D
D SRFETTM
D Soft Recovery MOSFET:
D Integrated Schottky Diode

G
G
S S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain TA=25°C 13
ID
Current TA=70°C 10 A
C
Pulsed Drain Current IDM 68
Avalanche Current C IAS, IAR 15 A
Avalanche energy L=0.1mH C EAS, EAR 11 mJ
TA=25°C 3.1
PD W
Power Dissipation B TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 32 40 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 60 75 °C/W
Maximum Junction-to-Lead Steady-State RθJL 17 24 °C/W

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 AO4712

Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=1mA, VGS=0V 30 V
VDS=30V, VGS=0V 0.5
IDSS Zero Gate Voltage Drain Current mA
TJ=125°C 100
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS， ID=250µA 1.1 1.65 2.1 V
ID(ON) On state drain current VGS=10V, VDS=5V 68 A
VGS=10V, ID=13A 9 11
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 13 16
VGS=4.5V, ID=11A 10.7 14 mΩ
gFS Forward Transconductance VDS=5V, ID=13A 80 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 0.7 V
IS Maximum Body-Diode Continuous Current 5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 930 1170 1400 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 90 128 170 pF
Crss Reverse Transfer Capacitance 45 89 125 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 16 20 24 nC
Qg(4.5V) Total Gate Charge 7 8.7 10.5 nC
VGS=10V, VDS=15V, ID=13A
Qgs Gate Source Charge 3.2 nC
Qgd Gate Drain Charge 3 nC
tD(on) Turn-On DelayTime 6 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.2Ω, 2.4 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 23 ns
tf Turn-Off Fall Time 4 ns
trr Body Diode Reverse Recovery Time IF=13A, dI/dt=500A/µs 5.5 7 8.5 ns
Qrr Body Diode Reverse Recovery Charge IF=13A, dI/dt=500A/µs 5 6.5 8 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AO4712

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

35 35
10V
30 VDS=5V
30
2.75V
3V
25 25

20 20
ID (A)

ID(A)
2.5V 125°C
15 15

10 10
25°C
5 VGS=2.25V 5

0 0
0 1 2 3 4 5 1.5 2 2.5 3
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

13 2

Normalized On-Resistance
12 1.8
VGS=4.5V VGS=10V
ID=13A
11 1.6
Ω)
RDS(ON) (mΩ

17
10 VGS=10V 1.4 5
2
9 1.2 VGS=4.5V
I =11A
10
D
8 1

7 0.8
1 6 11 16 21 26 0 25 50 75 100 125 150 175 200
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (°C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

25 1.0E+02
ID=13A
1.0E+01 125°C
20
40
1.0E+00
125°C
Ω)

15
RDS(ON) (mΩ

1.0E-01
IS (A)

1.0E-02
10 25°C
1.0E-03
5 25°C
1.0E-04

0 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO4712

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1500
Ciss
VDS=15V
8 ID=13A 1200

Capacitance (pF)
VGS (Volts)

6 900

4 600
Coss

2 300 Crss

0 0
0 5 10 15 20 0 5 10 15 20 25
Qg (nC) VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

1000.0
10000

100.0
10µs 1000
RDS(ON)
100µs
ID (Amps)

10.0 limited
Power (W)

100
1ms
1.0 TA=25°C
10ms
TJ(Max)=150°C 10
0.1 10s
TA=25°C
DC
0.0 1
0.01 0.1 1 10 100 0.00001 0.001 0.1 Width (s) 10
Pulse 1000
VDS (Volts) Figure 11: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Figure 10: Maximum Forward Biased
Safe Operating Area (Note F)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
Zθ JA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=75°C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO4712

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.E-01 0.9
0.8
20A
1.E-02 0.7 10A
VDS=30V 0.6

VSD (V)
0.5
IR (A)

1.E-03
0.4 5A
VDS=15V
0.3
1.E-04 0.2 IS=1A
0.1

1.E-05 0
0 50
100 150 200 0 50 100 150 200
Temperature (°C) Temperature (°C)
Figure 13: Diode Reverse Leakage Current vs. Figure 14: Diode Forward voltage vs. Junction
Junction Temperature Temperature

12 6 8 3
di/dt=800A/µs di/dt=800A/µs
125ºC 125ºC 2.5
5
9 6
2
25ºC 4 25ºC
Qrr (nC)

trr (ns)
Irm (A)

trr
6 4 1.5

S
Qrr
125ºC 3 125ºC
1
3 Irm 2 S
2 25ºC
25ºC 0.5

0 1 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
IS (A) IS (A)
Figure 15: Diode Reverse Recovery Charge and Peak Figure 16: Diode Reverse Recovery Time and
Current vs. Conduction Current Softness Factor vs. Conduction Current

10 6
12 3
Is=20A 125ºC
Is=20A
8 2.5
9 40 125ºC
4
6 2
25ºC
Qrr (nC)

Irm (A)

Qrr 25ºC
trr (ns)

6 trr 1.5
S

4 125ºC
125ºC
2 1
2 25ºC 3
S
Irm 0.5
25ºC
0 0 0 0
0 200 400 600 800 1000 0 200 400 600 800 1000
µs)
di/dt (A/µ µs)
di/dt (A/µ
Figure 17: Diode Reverse Recovery Charge and Peak Figure 18: Diode Reverse Recovery Time and
Current vs. di/dt Softness Factor vs. di/dt

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 AO4712

Gate Charge Test Circuit & Waveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on toff

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 8: December 2011 www.aosmd.com Page 6 of 6