Power Transistors

2SD1276, 2SD1276A
Silicon NPN triple diffusion planar type Darlington
For power amplification Unit: mm
10.0±0.2 4.2±0.2

0.7±0.1
Complementary to 2SB950 and 2SB950A 5.5±0.2 2.7±0.2

4.2±0.2
■ Features

7.5±0.2
● High foward current transfer ratio hFE φ3.1±0.1

16.7±0.3
● High-speed switching
● Full-pack package which can be installed to the heat sink with
one screw
1.3±0.2
■ Absolute Maximum Ratings

4.0
1.4±0.1
(TC=25˚C)

14.0±0.5
Solder Dip
Parameter Symbol Ratings Unit 0.5 +0.2
–0.1
0.8±0.1
Collector to 2SD1276 60
VCBO V
base voltage 2SD1276A 80 2.54±0.25

Collector to 2SD1276 60 5.08±0.5

VCEO V 1 2 3
emitter voltage 2SD1276A 80 1:Base
2:Collector
Emitter to base voltage VEBO 5 V
3:Emitter
Peak collector current ICP 8 A TO–220 Full Pack Package(a)

Collector current IC 4 A Internal Connection

Collector power TC=25°C 40 C
PC W
dissipation Ta=25°C 2
B
Junction temperature Tj 150 ˚C
Storage temperature Tstg –55 to +150 ˚C
E
■ Electrical Characteristics (TC=25˚C)
Parameter Symbol Conditions min typ max Unit
Collector cutoff 2SD1276 VCB = 60V, IE = 0 200
ICBO µA
current 2SD1276A VCB = 80V, IE = 0 200
Collector cutoff 2SD1276 VCE = 30V, IB = 0 500
ICEO µA
current 2SD1276A VCE = 40V, IB = 0 500
Emitter cutoff current IEBO VEB = 5V, IC = 0 2 mA
Collector to emitter 2SD1276 60
VCEO IC = 30mA, IB = 0 V
voltage 2SD1276A 80
hFE1 VCE = 3V, IC = 0.5A 1000
Forward current transfer ratio
hFE2* VCE = 3V, IC = 3A 2000 10000
IC = 3A, IB = 12mA 2
Collector to emitter saturation voltage VCE(sat) V
IC = 5A, IB = 20mA 4
Base to emitter voltage VBE VCE = 3V, IC = 3A 2.5 V
Transition frequency fT VCE = 10V, IC = 0.5A, f = 1MHz 20 MHz
Turn-on time ton 0.5 µs
IC = 3A, IB1 = 12mA, IB2 = –12mA,
Storage time tstg 4 µs
VCC = 50V
Fall time tf 1 µs
*h Rank classification
FE2

Rank Q P
hFE2 2000 to 5000 4000 to 10000

1
Power Transistors 2SD1276, 2SD1276A

PC — Ta IC — VCE IC — VBE
50 10 10
(1) TC=Ta TC=25˚C VCE=3V
(2) With a 100 × 100 × 2mm
Collector power dissipation PC (W)

(1) Al heat sink IB=4.0mA

40 (3) With a 50 × 50 × 2mm 8 8
3.5mA

Collector current IC (A)

Collector current IC (A)

Al heat sink 3.0mA
(4) Without heat sink 2.5mA
(PC=2W) 2.0mA 25˚C
30 6 1.5mA 6
TC=100˚C –25˚C
1.0mA

0.5mA
20 4 4

(2)
10 2 2
(3)
(4)
0 0 0
0 20 40 60 80 100 120 140 160 0 2 4 6 8 10 0 0.8 1.6 2.4 3.2
Ambient temperature Ta (˚C) Collector to emitter voltage VCE (V) Base to emitter voltage VBE (V)

VCE(sat) — IC hFE — IC Cob — VCB

100 105 10000
Collector to emitter saturation voltage VCE(sat) (V)

IC/IB=250 VCE=3V IE=0

Collector output capacitance Cob (pF)

f=1MHz
Forward current transfer ratio hFE

30 3000 TC=25˚C
TC=100˚C
10 104 25˚C 1000

–25˚C
3 25˚C 300

1 TC=100˚C 103 100

–25˚C
0.3 30

0.1 102 10

0.03 3

0.01 10 1
0.01 0.03 0.1 0.3 1 3 10 0.01 0.03 0.1 0.3 1 3 10 0.1 0.3 1 3 10 30 100
Collector current IC (A) Collector current IC (A) Collector to base voltage VCB (V)

Area of safe operation (ASO) Rth(t) — t

100 103
Non repetitive pulse (1) Without heat sink
TC=25˚C (2) With a 100 × 100 × 2mm Al heat sink
Thermal resistance Rth(t) (˚C/W)

30
102 (1)
Collector current IC (A)

10 ICP
t=1ms
3 IC (2)
10
10ms
1
DC
1
0.3

0.1
10–1
2SD1276A
2SD1276

0.03

0.01 10–2
1 3 10 30 100 300 1000 10–4 10–3 10–2 10–1 1 10 102 103 104
Collector to emitter voltage VCE (V) Time t (s)