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MDF12N50 N-channel MOSFET 500V

MDF12N50
N-Channel MOSFET 500V, 11.5 A, 0.65Ω

General Description Features


The MDF12N50 uses advanced MagnaChip’s MOSFET  VDS = 500V
Technology, which provides low on-state resistance, high  ID = 11.5A @ VGS = 10V
switching performance and excellent quality.  RDS(ON) ≤ 0.65Ω @ VGS = 10V

MDF12N50 is suitable device for SMPS, high Speed


switching and general purpose applications. Applications
 Power Supply
 PFC
 High Current, High Speed Switching

G
D
S
S

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit


Drain-Source Voltage VDSS 500 V
Gate-Source Voltage VGSS ±30 V
o
TC=25 C 11.5 A
Continuous Drain Current (※) o
ID
TC=100 C 7.0 A
(1)
Pulsed Drain Current IDM 46 A
TC=25oC 42 W
Power Dissipation PD
Derate above 25 oC 0.32 W/ oC

Peak Diode Recovery dv/dt(3) Dv/dt 4.5 V/ns


(4)
Single Pulse Avalanche Energy EAS 460 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C
※ Id limited by maximum junction temperature

Thermal Characteristics

Characteristics Symbol Rating Unit


(1)
Thermal Resistance, Junction-to-Ambient RθJA 62.5 o
C/W
(1)
Thermal Resistance, Junction-to-Case RθJC 3.0

Dec 2009. Version 1.2 1


MagnaChip Semiconductor Ltd.
MDF12N50 N-channel MOSFET 500V
Ordering Information

Part Number Temp. Range Package Packing RoHS Status


MDF12N50TH -55~150oC TO-220F Tube Halogen Free

Electrical Characteristics (Ta =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit


Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250µA, VGS = 0V 500 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 3.0 - 5.0
Drain Cut-Off Current IDSS VDS = 500V, VGS = 0V - - 1 µA
Gate Leakage Current IGSS VGS = ±30V, VDS = 0V - - 100 nA
Drain-Source ON Resistance RDS(ON) VGS = 10V, ID = 5.75A 0.55 0.65 Ω
Forward Transconductance gfs VDS = 30V, ID = 5.75A - 15 - S
Dynamic Characteristics
Total Gate Charge Qg - 22.7 -
Gate-Source Charge Qgs VDS = 400V, ID = 11.5A, VGS = 10V(3) - 7.7 - nC
Gate-Drain Charge Qgd - 8.7 -
Input Capacitance Ciss - 1030
Reverse Transfer Capacitance Crss VDS = 25V, VGS = 0V, f = 1.0MHz - 5 pF
Output Capacitance Coss - 121
Turn-On Delay Time td(on) - 25
Rise Time tr VGS = 10V, VDS = 250V, ID = 11.5A, - 50
ns
Turn-Off Delay Time td(off) RG = 25Ω(3) - 40
Fall Time tf - 30
Drain-Source Body Diode Characteristics
Maximum Continuous Drain to
IS - 11.5 - A
Source Diode Forward Current
Source-Drain Diode Forward
VSD IS = 11.5A, VGS = 0V - 1.4 V
Voltage
Body Diode Reverse Recovery
trr - 310 ns
Time
IF = 11.5A, dl/dt = 100A/µs(3)
Body Diode Reverse Recovery
Qrr - 2.6 µC
Charge

Note :

1. Pulse width is based on RθJC & RθJA and the maximum allowed junction temperature of 150°C.
2. Pulse test: pulse width ≤300us, duty cycle≤2%, pulse width limited by junction temperature TJ(MAX)=150°C.
3. ISD ≤11.5A, di/dt≤200A/us, VDD=50V, Rg =25Ω, Starting TJ=25°C
4. L=6.3mH, IAS=11.5A, VDD=50V, Rg =25Ω, Starting TJ=25°C

Dec 2009. Version 1.2 2


MagnaChip Semiconductor Ltd.
MDF12N50 N-channel MOSFET 500V
1.0

Vgs=5.5V
=6.0V
0.9
10 =6.5V
=7.0V
=8.0V
ID,Drain Current [A]

=10.0V 0.8

RDS(ON) [Ω ]
0.7 VGS=20V

1 VGS=10.0V

0.6

Notes
1. 250㎲ Pulse Test 0.5
2. TC=25℃

0.1 0.4
0.1 1 10 0 5 10 15 20

VDS,Drain-Source Voltage [V] ID,Drain Current [A]


Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with
Drain Current and Gate Voltage

1.8 1.2

※ Notes : ※ Notes :
Drain-Source Breakdown Voltage

1. VGS = 10 V 1. VGS = 0 V
1.6 2. ID = 5 A 2. ID = 250㎂
Drain-Source On-Resistance

1.1
BVDSS, (Normalized)
RDS(ON), (Normalized)

1.4

VGS=10V
1.2 1.0

VGS=4.5V

1.0

0.9

0.8

0.6 0.8
-50 -25 0 25 50 75 100 125 150 -50 0 50 100 150 200
o o
TJ, Junction Temperature [ C] TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 Breakdown Voltage Variation vs.


Temperature Temperature

20 100

* Notes ; ※ Notes :
1. VGS = 0 V
1. VDS=5V
2. ID = 250㎂
Reverse Drain Current [A]

15 125℃
25℃
10
IDR
ID [A]

10

1
25℃
5
125℃

0 0.1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6

VGS [V] VSD, Source-Drain Voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage


Variation with Source Current and
Temperature

Dec 2009. Version 1.2 3


MagnaChip Semiconductor Ltd.
MDF12N50 N-channel MOSFET 500V

Dec 2009. Version 1.2 4


MagnaChip Semiconductor Ltd.
MDF12N50 N-channel MOSFET 500V
1600
Ciss = Cgs + Cgd (Cds = shorted)
10 ※ Note : ID = 11.5A Coss = Cds + Cgd
1400 Crss = Cgd
100V Ciss
VGS, Gate-Source Voltage [V]

8 250V
1200
400V

Capacitance [pF]
1000
6
Coss
800

4
600
※ Notes ;
1. VGS = 0 V
400 2. f = 1 MHz
2 Crss

200
0

0
0 2 4 6 8 10 12 14 16 18 20 22 24 0.1 1 10

QG, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

2
10
Operation in This Area 14
is Limited by R DS(on)
10 µs
100 µs 12

10
1 1 ms
-ID, Drain Current [A]

10 ms 10
ID, Drain Current [A]

100 ms
DC 8
0
10

-1 4
10
Single Pulse
TJ=Max rated 2
TC=25℃

-2
10 0
10
-1
10
0
10
1
10
2 25 50 75 100 125 150

-VDS, Drain-Source Voltage [V] TC, Case Temperature [℃]

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs. Case
Temperature

10000 single Pulse


RthJC = 3.0℃/W
D=0.5 TC = 25℃
0
10 8000
Thermal Response

0.2
Power (W)

0.1 6000
Zθ JC(t),

0.05

10
-1 4000
0.02
0.01 ※ Notes :
Duty Factor, D=t1/t2 2000
PEAK TJ = PDM * Zθ JC* Rθ JC(t) + TC
RΘ JA=110℃/W
single pulse

10
-2 0
10
-5
10
-4
10
-3 -2
10 10
-1
10
0 1
10 1E-5 1E-4 1E-3 0.01 0.1 1 10
t1, Rectangular Pulse Duration [sec] Pulse Width (s)

Fig.11 Transient Thermal Response Curve Fig.12 Single Pulse Maximum Power
Dissipation

Dec 2009. Version 1.2 5


MagnaChip Semiconductor Ltd.
MDF12N50 N-channel MOSFET 500V
Physical Dimensions

3 Leads, TO-220F

Dimensions are in millimeters unless otherwise specified

S y mbol Min Nom Max


A 4.50 4.93
b 0.63 0.91
b1 1.15 1.47
C 0.33 0.63
D 15.47 16.13
E 9.60 10.71
e 2.54
F 2.34 2.84
G 6.48 6.90
L 12.24 13.72
L1 2.79 3.67
Q 2.52 2.96
Q1 3.10 3.50
¢R 3.00 3.55

Dec 2009. Version 1.2 6


MagnaChip Semiconductor Ltd.
MDF12N50 N-channel MOSFET 500V
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DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Seller’s customers using or selling Seller’s products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

Dec 2009. Version 1.2 7


MagnaChip Semiconductor Ltd.
MDF12N50 N-channel MOSFET 500V

Dec 2009. Version 1.2 8


MagnaChip Semiconductor Ltd.