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Microelectronics Reliability
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a r t i c l e i n f o a b s t r a c t
Article history: Between the metal–insulator–metal (MIM) capacitor and metal–oxide–metal (MOM) capacitor, the MIM
Received 25 March 2013 capacitor has a better characteristic of stable capacitance. However, the MOM capacitors can be easily
Received in revised form 7 August 2013 realized through the metal interconnections, which does not need additional fabrication masks into
Accepted 15 August 2013
the process. Moreover, the capacitance density of the MOM capacitor can exceed the MIM capacitor when
Available online 21 September 2013
more metal layers are used in nanoscale CMOS processes. With advantages of lower fabrication cost and
higher capacitance density, the MOM capacitor could replace MIM capacitor gradually in general inte-
grated circuit (IC) applications. Besides, the MOM capacitor ideally do not have the leakage issue. Thus,
the MOM capacitor can be used instead of MOS capacitor to avoid the gate leakage issue of thin-oxide
devices in nanoscale CMOS processes. With the MOM capacitor realized in the power-rail electrostatic
discharge (ESD) clamp circuit, the overall leakage is decreased from 828 lA to 358 nA at 25 °C, as com-
pared to the traditional design with MOS capacitor in the test chip fabricated in a 65 nm CMOS process.
Ó 2013 Elsevier Ltd. All rights reserved.
1. Introduction When the CMOS process shrinks toward nanoscale, the capaci-
tance density of the MOS capacitor ideally will be increased when
Capacitor is one of the basic components in integrated circuit the gate oxide becomes thinner. But, thinner gate oxide makes the
(IC) applications. To meet different purposes of circuit applications, gate-tunneling issue more serious to cause obvious gate leakage
various types of capacitors have been developed with their own current in the devices [7,8]. To avoid leakage current, the simple
characteristics. Due to the limitation of capacitance per unit area, method is using the thick-oxide device to realize the MOS capaci-
capacitors always occupy a considerable chip area in the whole cir- tor. However, without using the dual oxide devices in some special
cuit layout. Therefore, saving the chip area is the important consid- purposes for circuit applications, the capacitors can only be real-
eration in capacitor selection of CMOS ICs. Nowadays, three kinds ized by MIM or MOM capacitors. Fortunately, with the dimension
of capacitors are commonly used in IC applications, which are shrinkage in advanced CMOS processes, the lateral and vertical
MOS capacitor, metal–insulator–metal (MIM) capacitor, and me- intervals between metal interconnects are decreased, and the par-
tal–oxide–metal (MOM) capacitor. Among those capacitors, be- asitic capacitance between metal interconnects are increased. This
cause of thin gate oxide structure, MOS capacitor has the highest feature assists the MOM capacitor to extend its capacitance den-
capacitance density per unit area. However, due to the disadvan- sity. Furthermore, with the layout structure near the fractal geom-
tages of non-linearity, higher temperature coefficient, lower break- etries, the MOM capacitor can have the largest capacitance density
down voltage, and sensitive to process variations, it could not be in advanced CMOS processes [1].
suitable for all circuit applications. As a result, MIM capacitor In this paper, the gate-tunneling mechanisms and the impacts
and MOM capacitor were created to overcome those disadvantages of gate leakage current on circuit applications are described in Sec-
for circuit applications, which need reliable capacitor characteris- tion 2. Two different metal-layer capacitors of MIM capacitor and
tics [1–6]. However, the capacitance densities of MIM and MOM MOM capacitor are compared in Section 3. Finally, the experimen-
capacitors are much lower than the MOS capacitor. Consequently, tal verifications in silicon chip including the capacitance measure-
using MIM or MOM capacitors would increase more chip area to IC ment and gate leakage in RC-based power-rail ESD clamp circuits
products. are presented in Section 4.
q
This work was supported in part by National Science Council (NSC), Taiwan, 2. Gate-tunneling mechanisms and impacts of gate leakage
under Contract of NSC 101-2221-E-009-141 and NSC 101-2220-E-009-020; and in
current on circuit applications in advanced CMOS processes
part by ‘‘Aim for the Top University Plan’’ of the National Chiao-Tung University and
Ministry of Education, Taiwan.
⇑ Corresponding author. Tel.: +886 3 5131573; fax: +886 5 715412. Three gate-tunneling mechanisms were reported to explain the
E-mail address: mdker@ieee.org (M.-D. Ker). gate leakage in CMOS technology [7,8]. As shown in Fig. 1, three
0026-2714/$ - see front matter Ó 2013 Elsevier Ltd. All rights reserved.
http://dx.doi.org/10.1016/j.microrel.2013.08.011
P.-Y. Chiu, M.-D. Ker / Microelectronics Reliability 54 (2014) 64–70 65
Table 1
Device dimensions used in ESD-detection circuits for HSPICE simulation.
Fig. 7. MOM capacitor structure layout (a) top view and (b) cross-sectional view.
3. Metal-layer capacitors
capacitor
0:15 lm 0:15 lm 7:8 lm
were decreased to 0.1 lm. Besides, the MOM capacitor can be
stacked with several metal layers (MY) to increase the capacitance
With MOM 100 kX 36 lm 37 lm 100 lm 20 lm 40 lm
0:15 lm 0:15 lm 7:8 lm
capacitor density in advanced CMOS technology.
Various types of MOM capacitors have been developed with dif-
ferent configurations to increase the horizontal or vertical surface
area [18–22]. The structure of MOM capacitor used in this work
is shown in Fig. 6 [20]. In the same metal layer, the lateral capac-
itance (CLY) between the adjacent metal lines is shown in Fig. 7a.
In different metal layers, the vertical capacitance (CAY-1) is shown
Table 4
Measured capacitances of MIM and MOM capacitors under the bias voltage of 1 V,
0 V, and 1 V (at reference frequency of 100 kHz).
Table 5
Measured capacitances of MIM and MOM capacitors under different reference frequencies.
in Fig. 7b. With this kind of arrangement, the MOM capacitor takes The chip micrograph of test devices and the fabricated power-rail
the advantage of both the lateral and vertical fields to extend the ESD clamp circuits is shown in Fig. 9.
capacitance density. The capacitance could be estimated as:
C Lateral ¼ L ðF X 1Þ C LY ; 4.1. Measured capacitance of metal-layer capacitors
C Vertical ¼ L F X C AY1 ; and Table 4 shows the measured capacitance of two metal-layer
capacitors under the bias voltage (VB) at 1 V, 0 V, and 1 V (at a ref-
C Total ¼ C Lateral þ C Vertical : ð1Þ erence frequency of 100 kHz and temperature of 25 °C). Even the
The FX is finger numbers. L is metal length. CLY is coupling temperature was heated to 125 °C, each capacitor has the stable
capacitance per unit length between the metal lines in the same
metal layer. The CAY-1 is area capacitance per unit length between
metal layers. Table 2 shows the estimated results of device layout
area with different capacitors. With more metal layers stacked, the
MOM capacitor can have the smallest area to achieve the same de-
sired capacitance.
4. Experimental results
Table 6
Measured leakage currents amount fabricated capacitors under different temperatures.
Fig. 11. Measured leakage currents between two fabricated power-rail ESD clamp Fig. 12. TLP-measured I–V characteristics of the STSCR with and without the ESD-
circuits under different temperatures. detection circuit.
capacitance as shown in Table 4. However, with the different refer- capacitor, the gate leakage currents of PMOS and NMOS capacitors
ence frequencies in the measurement, the capacitance variations of at 25 °C are 21.2 lA and 50.9 lA, respectively. The leakage currents
two capacitors are quite different. The measured capacitances un- among the fabricated capacitors under 1 V bias and different tem-
der the reference frequencies of 100 kHz and 500 kHz at 0 V bias peratures are summarized in Table 6. With such huge leakage cur-
are summarized in Table 5. As shown in Table 5, more capacitance rent through the MOS capacitor, the thin-oxide MOS capacitor is no
variation is observed in MOM capacitors when the frequency is in- longer suitable for circuit applications in the 65 nm CMOS process.
creased. The maximum variation in MOM capacitor is 0.88%, but On the contrary, without the thin-oxide structure in MIM and
the variation in MIM capacitor is only 0.1%. In addition to the MOM capacitors, these two capacitors’ leakage currents are quite
capacitor’s structure, the most difference is the dielectric layer low (<20 pA). The leakage currents between two power-rail ESD
within two capacitors. Due to the MOM capacitor is realized from clamp circuits under different temperatures with VDD of 1 V are
the metal interconnects, the dielectric layers are mainly formed by compared in Fig. 11. The leakage currents are also summarized in
SiO2 and low-k materials [24]. But, in the MIM capacitor, the Table 7. Comparing with the leakage current of the stand-alone
dielectric layer was often implemented with the high-k materials thin-oxide NMOS capacitor, much higher leakage current (828 lA
to increase the capacitance density [25]. Some relative studies at 25 °C) is observed in the power-rail ESD clamp circuit with
had been reported that the frequency dependencies were various NMOS capacitor, which indicates that the leaky MOS capacitor cer-
with different materials to cause the capacitance loss [2,26]. How- tainly causes extra leakage paths in the ESD-detection circuit. On
ever, the characteristics of different materials were not further the contrary, with almost no leakage current in MOM capacitor,
analyzed in this work. the power-rail ESD clamp circuit with MOM capacitor has the low-
Besides, compared to the evaluated capacitances, more capaci- est leakage current of only 358 nA. The total leakage current of the
tances are measured in MOM capacitors. Thus, the accuracy of power-rail ESD clamp circuit with MOM capacitor is three orders
capacitance estimation (1) in MOM capacitor should be further im- smaller than that with NMOS capacitor from low temperature to
proved. However, the occupied area of MOM capacitor actually can high temperature.
be the smallest when more metal layers are used.
4.3. ESD robustness
4.2. Leakage current
To investigate the turn-on behavior of the ESD clamp device
Fig. 10a and b shows the measured gate leakage currents of the with ESD-detection circuit during ESD event, the transmission line
stand-alone thin-oxide (1 V) PMOS and NMOS capacitors pulse (TLP) with 100 ns pulse width and 10 ns rise time was used
(WC = 29 lm and LC = 28 lm) with the gate oxide thickness of to measure the second breakdown current (It2) of ESD protection
20 Å in a 65 nm CMOS process. Under 1 V bias across the MOS circuits. The TLP-measured I–V characteristics of the STSCR with
Table 7
Measured leakage currents and ESD robustness of the power-rail ESD clamp circuits.
Table 8
The percentage of capacitance variation within the estimations.
MY 3 4 5 3 4 5 3 4 5
CMeasured 1.14 pF 1.15 pF 1.17 pF 2.27 pF 2.30 pF 2.35 pF 5.71 pF 5.72 pF 5.74 pF
Capacitance variation In (1) 12.3% 13% 14.5% 11.9% 13% 14.9% 12.4% 12.6% 12.9%
In (2) 1.8% 2.6% 3.4% 2.6% 2.2% 2.6% 5.8% 4.8% 4.2%
and without the ESD-detection circuit are shown in Fig. 12. With- The test chips of this work were fabricated under the support of
out any trigger signal, the original trigger voltage (Vt1) of stand- TSMC University Shuttle Program.
alone STSCR (width = 40 lm) device is 10.7 V, and the It2 is 2.3 A.
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