Surface Engineering &

Characterization
Dr. Ahmed Umar Munawar
1- Surface Engineering in integrated circuits
2- Electroplating
3- High Entropy Coatings
4- Low Energy Electron Diffraction
6- Carbonitriding
7- Ion Implantation
9- Magnetic force microscope
10- X-ray Fluoroscence

Deadline: 31st of March !

 Nucleation

Nucleation can take place in the vapour phase

(Homogeneous nucleation)
Nucleation can take place on the substrate surface
(Heterogeneous nucleation)
 Nucleation

γsv = γfs + γvf cosθ Young’s equation

 Nucleation

For Island growth, θ >0

Therefore, γsv < γfs + γvf

For layer growth, θ = 0

γsv = γfs + γvf

For S.K growth,

γsv > γfs + γvf cosθ

Change in free energy accompanying condensation is:
ΔGV = -kT/Ώ ln (Pv / Ps)
Pv is the pressure of the supersaturated gas
Ps is the pressure at the substrate surface
Change in free energy accompanying
condensation is:
ΔGV = -kT ln (1 + S)
S = Supersaturation = (Pv – Ps) / Ps
Without supersaturation, ΔGV is zero and
nucleation is impossible !
Nucleation Rate

Nucleation Rate is given by:

N = N*A*ω (Nuclei/ cm2-sec )
N*= equilibrium conc. (per cm2) of stable nuclei
ω = rate at which atoms impinge (per cm2-sec)
onto the nuclei of critical area A*