UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR

HIGH POWER AMPLIFIER APPLICATION

FEATURES
* Complementary to 2SD718.
* Recommended for 45 ~ 50W Audio Frequency Amplifier
Output Stage.

TO-3P

1: BASE 2: COLLECTOR 3: EMITTER

*Pb-free plating product number: 2SB688L

ABSOLUTE MAXIMUM RATINGS

(Ta=25℃)

PARAMETER SYMBOL RATINGS UNIT

Collector-Base Voltage VCBO -120 V
Collector-Emitter Voltage VCEO -120 V
Emitter Base Voltage VEBO -5 V
Collector Current IC -10 A
Base Current IB -1 A
Collector Power Dissipation (TC=25℃) PC 80 W
Junction Temperature TJ 150 ℃
Storage Temperature Range TSTG -40 ~ +150 ℃

ELECTRICAL CHARACTERISTICS

(Ta=25℃)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cut-off Current ICBO VCB = -120V, IE = 0 -10 µA
Emitter Cut-off Current IEBO VEB = -5V, IC = 0 -10 µA
Collector-Emitter Breakdown Voltage V(BR)CEO IC = -50mA, IB= 0 -120 V
DC Current Gain hFE VCE = -5V, IC = -1A 55 160
Collector-Emitter Saturation Voltage VCE(sat) IC = -5A, IB = -0.5A -2.5 V
Base-Emitter Voltage VBE VCE = -5A, IC= -5A -1.5 V
Transition Frequency fT VCE = -5A, IC= -1A 10 MHz
Collector Output Capacitance Cob VCB = -10V, IE = 0, f=1MHz 280 pF

CLASSIFICATION OF hFE
RANK R O
RANGE 55 ~ 110 80 ~ 160

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UTC 2SB688 PNP EPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTICS

IC - VCE PC - Ta

COLLECTOR POWER DISSIPATION, P C (W)

-10 100
COMMON EMITTER (1)Ta=Tc
COLLECTOR CURRENT, I C (A)

A TC=25℃ (1) INFINITEHEATSINK

0m
A
-8 m -30 80 (2)300×300×2mm A1
00
-200mA
-4

HEAT SINK
(3)200×200×2mm A1
-6 60 HEAT SINK
-100mA
(2) (4)100×100×2mm A1
-4 40 HEAT SINK
-50mA (3) (5)NO HEAT SINK
IB= -20mA (4)
-2 20

0mA (5)
0 0
0 -2 -4 -6 -8 -10 --12 -14 0 40 80 120 160 200 240

COLLECTOR EMITTER VOLTAGE, VCE (V) AMBIENT TEMPERATURE, Ta (℃)

VCE(sat) - IC SAFE OPERATING AREA

-5 -30
-3 COMMON EMITTER IC MAX. (PULSED)※ t=1ms※
IC/IB=10 t=10ms※
IC MAX
COLLECTOR-EMITTER SATURATION

COLLECTOR CURRENT, IC (A) -10 (CONTINUOUS) t=100ms※

-1 DC t=500ms※
-5 O
P
T C ER
VOLTAGE, VCE(sat) (V)

-0.5 ℃ =2 AT
00 -3
5 ℃ IO
-0.3 =1 N
TC

-0.1 TC=25℃ -1

TC=-25 ℃ ※SINGLE NONREPETITIVE

-0.05 -0.5 PULSE TC=25℃

VCEO MAX
-0.03 -0.3 CURVES MUST BE DERATED
LINEARLY WITH INCREASE
IN TEMPERATURE.
-0.01 -0.1
-0.01 -0.03 -0.1 -0.3 -1 -3 -10 -1 -3 -10 -30 -100 -300
COLLECTOR CURRENT, IC (A) COLLECTOR EMITTER VOLTAGE, VCE (V)

hFE - IC
1K
COMMON EMITTER
VCE=-5V
500
DC CURRENT GAIN, hFE

300
TC=100℃

TC=25℃
100 TC= -25℃

50

30

10
-0.01 -0.03 -0.1 -0.3 -1 -3 -10

COLLECTOR CURRENT, IC (A)

UTC assum es no responsibility for equipm ent failures that result from using products at v alues that
exceed, ev en m om entarily, rated v alues (such as m axim um ratings, operating condition ranges, or
other param eters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, dev ices or system s where
m alfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The inform ation
presented in this docum ent does not form part of any quotation or contract, is believ ed to be accurate
and reliable and m ay be changed without notice.

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