Assignment 1, Power Electronics & Applications - EE, Spring 2016

Due March 2, 2016

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Use A4 size blank papers to solve this assignment by hand. Use blue or black ink.

Q.1 Locate a data sheet for an IRF630 MOSFET. Determine its maximum continuous
drain current, maximum drain-to-source voltage, maximum gate-to-source voltage,
junction-to-case thermal resistance, channel resistance at 100°C, gate-to-source
voltage to drive it on, switching time, and gate capacitance.

Q.2 Locate a data sheet for an IRFZ14 MOSFET. Determine its maximum continuous
drain current, maximum drain-to-source voltage, maximum gate-to-source voltage,
junction-to-case thermal resistance, channel resistance at 100°C, gate-to-source
voltage to drive it on, switching time, and gate capacitance.

Q.3 It is decided to use six IRF530s in parallel to drive a 35Ω load from a 24 𝑉𝑑𝑐
supply with a 75% duty cycle. Calculate the voltage drop across the paralleled
transistors, and the power each transistor must dissipate. Is a heat sink needed? Prove
your answer with a calculation.

Q.4 Determine the effective (r m s) value of v(t) = 4 + 8 sin ( 𝜔1t +100 ) + 5 sin (𝜔2 t +
500 ) for (a) 𝜔2 = 2𝜔1 and (b) 𝜔2 = 𝜔1

Q.5 (a) A triangular current waveform like that shown in Fig. a. is commonly
encountered in dc power supply circuits. Determine the rms value of this current.
(b) Determine the rms value of the offset triangular waveform in Fig. b.

Figure 5 (a) Triangular waveform (b) offset triangular waveform.