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Features Description
• 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate
power field effect transistors. They are advanced power
• rDS(ON) = 0.077Ω and 0.100Ω
MOSFETs designed, tested, and guaranteed to withstand a
• Single Pulse Avalanche Energy Rated specified level of energy in the breakdown avalanche mode
of operation. All of these power MOSFETs are designed for
• Nanosecond Switching Speeds applications such as switching regulators, switching conver-
• Linear Transfer Characteristics tors, motor drivers, relay drivers, and drivers for high power
bipolar switching transistors requiring high speed and low
• High Input Impedance gate drive power. These types can be operated directly from
• Related Literature integrated circuits.
- TB334 “Guidelines for Soldering Surface Mount Formerly developmental type TA17421.
Components to PC Boards”
NOTE: When ordering, use the entire part number. Add the suffix 9A to
obtain the TO-263AB variant in the tape and reel, i.e., RF1S540SM9A.
Packaging
JEDEC TO-220AB JEDEC TO-262AA
SOURCE SOURCE
DRAIN DRAIN
DRAIN
GATE GATE
(FLANGE)
DRAIN (FLANGE)
JEDEC TO-263AB
DRAIN
(FLANGE)
GATE
SOURCE
CAUTION: These devices are sensitive to electrostatic discharge. Users should follow proper ESD Handling Procedures. File Number 2309.3
Copyright © Harris Corporation 1997
5-1
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTE:
1. TJ = 25oC to TJ = 150oC.
IRF541, IRF543 80 - - V
Zero Gate Voltage Drain Current IDSS VDS = Rated BVDSS, VGS = 0V - - 25 µA
On-State Drain Current (Note 2) ID(ON) VDS > ID(ON) x rDS(ON) MAX, VGS = 10V
IRF540, IRF541, (Figure 7) 28 - - A
RF1S540, RF1S540SM
IRF542, IRF543 25 - - A
Gate to Source Leakage Current IGSS VGS = ±20V - - ±100 nA
Forward Transconductance (Note 2) gfs VDS ≥ 50V, ID = 17A (Figure 12) 8.7 13 - S
Fall Time tf - 50 75 ns
Total Gate Charge Qg(TOT) VGS = 10V, ID = 28A, VDS = 0.8 x Rated - 38 59 nC
(Gate to Source + Gate to Drain) BVDSS , Ig(REF) = 1.5mA (Figures 14, 19, 20)
Gate Charge is Essentially Independent of Op-
Gate to Source Charge Qgs - 8 - nC
erating Temperature
Gate to Drain “Miller” Charge Qgd - 21 - nC
5-2
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
Source to Drain Diode Voltage (Note 2) VSD TJ = 25oC, ISD = 27A, VGS = 0V (Figure 13) - - 2.5 V
Reverse Recovery Time trr TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs 70 150 300 ns
Reverse Recovery Charge QRR TJ = 25oC, ISD = 28A, dISD/dt = 100A/µs 0.44 1.0 1.9 µC
NOTES:
2. Pulse test: pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3).
4. VDD = 25V, starting TJ = 25oC, L = 440µH, RG = 25Ω, peak IAS = 28A. (Figures 15, 16).
5-3
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
1.2 30
POWER DISSIPATION MULTIPLIER
1.0 24
6
0.2
0
0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC , CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TEMPERATURE CASE TEMPERATURE
10
THERMAL IMPEDANCE (oC/W)
ZθJC, TRANSIENT
0.5
0.2 PDM
0.1 0.1
0.05 t1
t2
0.02 NOTES:
0.01 DUTY FACTOR: D = t1/t2
SINGLE PULSE PEAK TJ = PDM x ZθJC + TC
0.01
10-5 10-4 10-3 10-2 10-1 1 10
t1, RECTANGULAR PULSE DURATION (s)
VGS = 7V
ID, DRAIN CURRENT (A)
IRF542, 3
1ms 30 VGS = 6V
10
20
OPERATION IN THIS
RF1S540, SM
10ms
AREA MAY BE VGS = 5V
IRF540, 2
LIMITED BY rDS(ON)
10
TJ = MAX RATED DC
IRF541, 3 VGS = 4V
SINGLE PULSE
0
1 1 10 100 0 12 24 36 48 60
VDS, DRAIN TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V)
5-4
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
50 100
80µs PULSE TEST 80µs PULSE TEST VDS ≥ 50V
VGS = 10V 10
30
VGS = 6V
20
175oC 25oC
1
VGS = 5V
10
VGS = 4V
0 0.1
0 1.0 2.0 3.0 4.0 5.0 0 2 4 6 8 10
VDS, DRAIN TO SOURCE VOLTAGE (V) VGS, GATE TO SOURCE VOLTAGE (V)
1.0 3.0
80µs PULSE DURATION NORMALIZED DRAIN TO SOURCE VGS = 10V, ID = 28A
rDS(ON), DRAIN TO SOURCE
0.8 2.4
ON RESISTANCE (Ω)
ON RESISTANCE
0.6 1.8
0.4 1.2
VGS = 20V
0 0.0
0 25 50 75 100 125 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
ID, DRAIN CURRENT (A) TJ , JUNCTION TEMPERATURE (oC)
1.25 3000
ID = 250µA VGS = 0V, f = 1MHz
NORMALIZED DRAIN TO SOURCE
C, CAPACITANCE (pF)
1.05 1800
CISS
0.95 1200
COSS
0.85 600
CRSS
0.75 0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180 1 10 100
TJ , JUNCTION TEMPERATURE (oC) VDS, DRAIN TO SOURCE VOLTAGE (V)
FIGURE 10. NORMALIZED DRAIN TO SOURCE BREAKDOWN FIGURE 11. CAPACITANCE vs DRAIN TO SOURCE VOLTAGE
VOLTAGE vs JUNCTION TEMPERATURE
5-5
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
20 1000
VDS ≥ 50V, 80µs PULSE TEST
16
25oC 100
12
175oC 175oC
8
25oC
10
0
1
0 10 20 30 40 50 0 0.6 1.2 1.8 2.4 3.0
ID , DRAIN CURRENT (A) VSD, SOURCE TO DRAIN VOLTAGE (V)
FIGURE 12. TRANSCONDUCTANCE vs DRAIN CURRENT FIGURE 13. SOURCE TO DRAIN DIODE VOLTAGE
20
ID = 28A
VGS, GATE TO SOURCE VOLTAGE (V)
VDS = 50V
16
VDS = 20V
12
VDS = 80V
8
0
0 12 24 36 48 60
Qg , TOTAL GATE CHARGE (nC)
5-6
IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM
VDS
BVDSS
L tP
VDS
tP
0V IAS
0
0.01Ω
tAV
FIGURE 15. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 16. UNCLAMPED ENERGY WAVEFORMS
tON tOFF
td(ON) td(OFF)
tr tf
RL VDS
90% 90%
+
VDD 10% 10%
RG 0
-
DUT 90%
FIGURE 17. SWITCHING TIME TEST CIRCUIT FIGURE 18. RESISTIVE SWITCHING WAVEFORMS
VDS
CURRENT (ISOLATED
REGULATOR SUPPLY) VDD
Qg(TOT)
SAME TYPE VGS
12V AS DUT Qgd
0.2µF 50kΩ
BATTERY Qgs
0.3µF
D VDS
G DUT 0
Ig(REF) S
0 IG(REF)
VDS
IG CURRENT ID CURRENT
SAMPLING SAMPLING 0
RESISTOR RESISTOR
FIGURE 19. GATE CHARGE TEST CIRCUIT FIGURE 20. GATE CHARGE WAVEFORMS
5-7