EE 533

Microwave Integrated Circuits

Lecture 15 to 17

Characteristics of Microstrip line

Dr. Sheikh Sharif Iqbal

Method of Microstrip Analysis: to find associated Z0 & γ of line.

In quasi-static approach, the mode of propagation is considered to be

pure TEM and the microstrip characteristics (Z0 & β) are calculated
from the electrostatic capacitance of structure. Using the two values
of capacitances: ‘Ca’ for a unit length of microstrip with dielectric
replaced by air and ‘C’ for a unit of microstrip with dielectric present,
the equations are given by; and
where, and ‘c’ is the velocity of electromagnetic
waves in free space. Five methods for calculating ‘Ca’ & ‘C’ are
presented. These methods are adequate for designing circuits at lower
frequencies (below X-band) where the ‘w’ and ‘h’ are much smaller than
the ‘λ’ in the dielectric material.

1. Modified Conformal Transformation Method: is an exact conformal

transformation for the impedance of a zero-thickness, homogeneous
dielectric microstrip[Schneider]. The transformation from microstrip to a
parallel plate capacitor is expressed in terms of logarithmic derivative of
the theta function and a parameter, expressed in elliptic integrals.
Wheeler used this method together with the concept of effective εr
2. Finite Difference Method: is based on numerical solution of Laplace's
equation in finite difference form, solved (typically) using relaxation method.
It is more suitable for enclosed microstrip lines with finite thickness.
3. Integral Equation Method: Here Poisson equation in terms of a line
charge distribution is used to define a Green's function, which in turn is
used to formulated an integral equation, expressed in the form of matrix
equation and numerically solved to find the charge distribution.
4. Variational Method in Fourier Transform Domain: is computationally
more efficient with two significant features. 1st, the use of a variational
method for calculating capacitance from charge-density avoids the need
for an accurate knowledge of the charge density distribution. 2nd, a major
portion of analysis is carried out in FTD which replaces integral equation
for potential with an algebraic product and a factor derived in FTD.
.5. Segment & Boundary Element Method: is best suited for multi-layered
dielectric substrates, where different homogeneous regions are analyzed
separately by the boundary element method and combined to yield the
final result by using the segmentation method.
Fullwave approach: Microstrip cannot support pure TEM mode & small
longitudinal component of both E & H fields need to be present to satisfy
boundary condition at dielectric-air interface. These hybrid modes cannot
be fully described in terms of static capacitances & inductances used in
Quasi-static method. But in Fullwave analysis, hybrid modes are catered
and propagation constant is determined instead of ‘C’ and ‘L’. In this
approach, time-varying E & H fields are used to solve the wave equation
subject to proper boundary conditions.(Field analysis of µ-strip ≈ fullwave analysis)
Fullwave analysis also includes the depressive nature (variation of Z0 & vp
with frequency) of microstrip line. In complicated fullwave analysis quasi-
empirical models are used. Two methods used in Fullwave analysis are;
Open and Enclosed Microstrip analysis: Differ mainly in the application
process of the boundary conditions at the dielectric-air interface (y = h)

Fourier series representation of fields Fourier integral representation of fields

Matching techniques used in microstrip lines:

µ-strip S/C parallel stub (H.W) Stub matching for input/output network
Losses in µ-strip lines: µ-strip is suitable for low (M) power device

Dielectric loss Conductor loss

Discontinuities:
A discontinuity in a
microstrip is caused by
an abrupt change in the
geometry of µ-strip.

Therefore, E & H field

distributions are
modified near the
discontinuity. Altered
E.field distribution gives
rise to a change in ‘Cap-
–acitance and the altered
H.field distribution can
be expressed in terms of
an equivalent Inductance

The analysis of a µ-strip

discontinuity involves
evaluation of these ‘C’ and ‘L’ using quasi-static or rigorous fullwave analysis
• Commonly used microstrip discontinuities and their equivalent circuits:
• Discontinuities are used to interconnect and/or realize µ-wave circuit elements
Compensation of a bend discontinuity:
In practical circuits,
microstrip bends are l

l
chamfered to
compensate for the (a) (b) (c)
excess capacitance.
In figure (a), minimum
reflection occurs if the
radius of the curvature
(of conductor center) is
greater than three times
of the width of the
µ-strip line.
In the graph below, S11
(in dB) is plotted for the
uncompensated and the
compensated lines.
Observe the reduction if
in reflection coefficient
Compensation of a Step and T-junction discontinuity:

The compensation of a
step discontinuity using l

appropriate tapers has l

been reported .In this (a) (b) (c)

case the effect of
discontinuity reactance is
reduced by chamfering
the large width. The
taper length depends
upon the value of step
ratio, dielectric constant,
and the substrate (a) (b)
thickness (h).

The 2nd figure (a, b, c) shows T-junction compensation configurations using
rectangular and triangular notches and their approximate dimensions for
h/λ<<1. However, accurate dimensions of the compensated configuration
depend upon the line widths, dielectric constant, and the substrate thickness.
Coaxial to Microstrip transition: Broad band as both support TEM

Compensated
Slotline to Microstrip Waveguide to Microstrip
transition: transition:

Types of Microstrip: There are several derivatives of microstrip lines

being used in MICs. These include inverted and suspended microstrip lines,
multilayered microstrip, thin film microstrip and valley microstrip.
1.Suspended & Inverted Microstrip line: Provide a higher Q (500 to 1500)
2.Multilayered Dielectric Microstrip
line: Used in MMIC circuits.
 Inverted Microstrip
Suspended Microstrip

3.Thin Film Microstrip (TFM): makes MMICs compact and low cost.
TFM has high insertion loss (S ) due to thin-microstrip conductor. GND
11

plane separates thin low-εr substrate from semi-insulating GaAs subst.,

that provides support as well as a semiconductor medium for active
devices. With ⇑ ‘w’, ⇓ Z0 can be realized w/o exciting high ord. mode

Valley
Microstrip

Thin Film Microstrip

4. Valley Microstrip: uses multilayer technique to realize low-loss and
miniaturized MMICs. Lower insertion loss compared to TFM lines.
Coupled Microstrip lines: consists of two µ-strips lines placed parallel
to each other and in close proximity, with continuous coupling between the
electromagnetic fields of the two lines. Consequently, coupled µ-strip supports
two modes with different Z0 and εr.
• When the two conductors of a coupled
line pair are identical (in Z) we
have a symmetrical configuration.

Electric Field;
- - - - Magnetic Field

EVEN Modes ODD Modes

 • If the two lines do not have the
same impedance, it is called
asymmetric.
Methods of Analysis: To determine
propagation characteristics, we use,
(1) even and odd-mode method,
(2) the coupled mode formulation,
(3) graph transformation technique
(4) congruent transformation
technique
- 1st method is suitable for
symmetrical coupled line;
- 2nd method can be used to
asymmetrical lines
Microstrip Fabrication process: three basic techniques used are
(1) Printed circuit board (PCB) etching technique: is same as used
for conventional double sided PCB production. It is ideal for soft-board
(with PTFE poly-tetra-fluor-ethylene or TAFLON) substrates and
high volume production. The photographic process to etch away
unwanted copper on one circuit side and leaving the ground plate
totally covered with copper is summarized below :
• A mask of the circuit layout is prepared. Initially mask is 10 to 20 times
larger than actual size, which is photo-reduced later to original size. A
positive mask represents the required conductor pattern as opaque to
light. A negative mask is the exact opposite (used for ⇑ layer thickness)
• Get PCB board that is either pre-coated with a photo-resist (P.R.) OR
use P. R. spray or lamination process to put a uniform coating of P.R.
P.R. can be either positive or negative.
Positive P.R. is used with a positive
mask. P.R. is chemically changed by
ultra-violet light & exposed P.R. coating
is removed with ‘+’ developer sol.
• The next step is to place the mask on the photo-resist coated PCB
and expose the board to ultra-violet light, see fig (a).

• To remove unwanted exposed P.R coating, remove the mask and

place the board in ‘+’ developer solution, see fig (b).
• Now use Ferric Chloride to
etch or remove unwanted
copper, see fig (c).
• Finally use photo resist
stripper to remove the un-
exposed P.R., see fig (d).

(2) Thick film technique: is

similar to silk-screen printing &
used for non-polymer based
substrates (alumina, sapphire, quartz) which are not 'factory' coated
with copper or gold. The processes summarized below :
• The screen used for printing the microstrip pattern is coated with
photo-resist. Negative photo-resist for a positive mask & vice-versa.
• The mask is then placed in the screen and exposed to ultra violet light.
• Then the mask is removed and the screen developed to remove the
unexposed photo-resist. The screen is thus blocked in all places other
than where the required conductor pattern (circuit layout) is to be.
• The screen is now placed on the substrate and a special 'ink' (a paste
containing gold or palladium-silver with an organic binder) is spread
over the screen. The paste is then forced through the unblocked
regions of the screen onto the substrate using a high pressure roller.
To form the ground plate the whole surface of the reverse side of the
substrate is covered in the same way.
• The 'printed' substrate is then placed in an oven for approximately 15
minutes which first drives off the organic binder and firmly attaches the
conducting circuit layout and ground plane to the dielectric surfaces.
• Resolution of the order of 100 µm can be achieved with thick film tech.

(3) Thin film technique: is expensive but provide much higher preci-
sion & better resolution and can define fine conductor line & narrow
gaps down to few microns. Fabrication process is discussed below :
• Clean the substrate material with an organic solvent, (trichlorethylene)
• Thinly etch the substrate surface with a solution of concentrated
sulphuric-acid & hydrogen-peroxide. This process removes about
approximately 1- 5 nm surface of the substrate material.
• Use vacuum evaporation to apply a
thin layer (1 to 5nm) of chromium.
Chromium is used as it adheres
better to substrate than gold/copper
• A mixture of chromium and copper,
or chromium and gold, is then
evaporated to form a further layer
of about 5nm thick.
• Finally copper or gold is evaporated
to form another final conducing
layer of about 5nm thick.
• Since 5nm layer is much less than the skin depth (δ≅0.7 µm) of copper
at 10GHz. So additional copper or gold layer is electro-plated to build
up a final thickness of the conducting film to between 5 to 10 µm.
• Finally the microstrip circuit is formed using a mask and etching
process, exactly similar to that already explained in 1st process (PCB).
Mostly, electroplating is performed after the etching process or after
the circuit pattern has been put down on the evaporated layers.
Applications of µ-strip line: µ-strip lines constitute the basic building
blocks of microwave integrated circuits. Among them, passive circuits include
filters, impedance transformers, hybrids, couplers, Power dividers and
combiners, delay lines and active circuits include, amplifiers, oscillators,
mixers, control circuits employing solid state devices.