Analog Electronic Circuits 15EE34

Assignment Questions
Module-1

1. Derive equation for space charge capacitance for diode

2. What is the relation between diode voltage and diode current
3. What are the effect of temperature on diode operation
4. When a silicon diode is conducting at a temperature of 25°C, a 0.7 V drop exists
across its terminals. What is the voltage, VON, across the diode at 100°C?
5. Find the output current for the circuit shown in fig.
6. The circuit of fig. , has a source voltage of Vs = 1.1 + 0.1 sin 1000t. Find the current,
iD. Assume that

nVT = 40 mV

VON = 0.7 V

7. Explain the small signal operation of diode

8. Calculate the voltage output of the circuit shown in fig. 5 for following inputs

(a) V1 = V2 = 0.

(b) V1 = V, V2 = 0.

(c) V 1 = V2 = V knew voltage = Vr

Forward resistance of each diode is R f.

9. Explian the diode application as half wave rectifier Half wave Rectifier
10. How can a diode circuit be implemented to represent parallel independent clippers
11. Find the output voltage v out of the clipper circuit of fig. 7(a) assuming that the diodes
are

Department of EEE, SJBIT Page 1

 Analog Electronic Circuits 15EE34

a. ideal.
b. Von = 0.7 V. For both cases, assume RF is zero.

12. Using a diode implement voltage doubler circuit

13. Design a 10-volt Zener regulator as shown in fig. 1 for the following conditions:

a. The load current ranges from 100 mA to 200 mA and the source voltage ranges
from 14 V to 20 V. Verify your design using a computer simulation.
b. Repeat the design problem for the following conditions: The load current
ranges from 20 mA to 200 mA and the source voltage ranges from 10.2 V to 14
V.

14. What are the operating regions of BJT

15. Explain the biasing circuits of BJT
16. Explain load line analysis of BJT
17. Analyze the following circuit: given
β = 75, VCC = 16V, RB = 430kΩ, RC = 2kΩ and RE = 1k Ω

Module-2

1. Explain the bandwidth of amplifier

2. Explain the ground reference of the amplifier
3. What are the h-parameters
4. Determine h-parameters of an amplifier
5. Explain CE amplifier with emitter resistance

Department of EEE, SJBIT Page 2

 Analog Electronic Circuits 15EE34

Module-3
1. Explain darlington amplifier
2. Design a single stage npn emitter follower amplifier as shown in fig. 2 with β =60, VBE
=0.7V, Rsource =1 KΩ, and VCC= 12V. Determine the circuit element values for the
stage to achieve Ai = 10 with a 100 Ω load.

Fig. 2

3. Design a CB amplifier using an npn transistor as shown in fig. 3 with β = 100, VCC=
24 V, Rload= 2KΩ, RE = 400Ω VBE = 0.7V. Design this amplifier for a voltage gain of
20.

Fig. 3

4. Derive efficiency and power equation for Darlington amplifier

Department of EEE, SJBIT Page 3
 Analog Electronic Circuits 15EE34

5. Explain cascade amplifier

6. Explain types of amplifier coupling
7. Determine the current and voltage gains for the two-stage capacitor-coupled amplifier
shown in fig. 1.

8. Design a transformer-coupled amplifier as shown in fig. 7 for a current gain of Ai =

80. Find the power supplied to the load and the power required from the supply.

Module-4

1. What is DC load line analysis

2. What is Class A current drain

3. How can a Class B amplifier be biased

4. Explain Push-Pull circuit

Department of EEE, SJBIT Page 4

 Analog Electronic Circuits 15EE34

5. Calculate power of push-pull class B amplifier

6. Draw DC equivalent circuit for class C amplifier & explain

7. Design a Widlar current source to provide a constant current source of 3 A with

VCC = 12V, R1 = 50 kO, β =100 and VBE = 0.7V
8. For the circuit shown in fig. 5, determine the emitter current in transistor Q3. Given
that β = 100, VBE = 0.715V.

9. Explain basic operation of phase shift oscillator

10. Design RC phase shift oscillator using BJT

11. It is desired to design a phase shift oscillator using an FET having g = 5000S
rd= 40 k , and a feedback circuit value of R = 10 k. Select the value of C for
oscillator operation at 5 kHz and RD for A > 29 to ensure oscillator action.

Module-5

1. What are the advantages of FET

2. Explain the operation of FET

3. Draw transconductance curve of FET

4. Determine gm for an n-channel JFET with characteristic curve shown in fig

Department of EEE, SJBIT Page 5

 Analog Electronic Circuits 15EE34

5. Determine g m for a JFET where IDSS = 7 mA, VP = -3.5 V and VDD = 15V.
Choose a reasonable location for the Q-point.

Department of EEE, SJBIT Page 6