DATA SHEET

MOS FIELD EFFECT TRANSISTOR

2SK2158
N-CHANNEL MOS FET
FOR HIGH-SPEED SWITCHING

The 2SK2158 is an N-channel vertical type MOS FET featur- PACKAGE DIMENSIONS
ing an operating voltage as low as 1.5 V. Because it can be (in millimeters)
driven on a low voltage and it is not necessary to consider
2.8 ± 0.2

0.4 –0.05
driving current, the 2SK2158 is suitable for use in low-voltage

+0.1
+0.1
1.5 0.65 –0.15
portable systems such as headphone stereo sets and camcorders.

0.95 0.95
FEATURES

2.9 ± 0.2
2
• Capable of drive gate with 1.5 V
3

0.4 –0.05
1

+0.1
• Because of high input impedance, there is no need to
consider driving current.
• Bias resistance can be omitted, enabling reduction in total
Marking
number of parts.

0.3

0.16 –0.06
+0.1
1.1 to 1.4

0 to 0.1
Marking: G23
EQUIVALENT CIRCUIT
3

Internal
2 PIN CONNECTION
diode
1. Source (S)
Gate protection
2. Gate (G)
diode
3. Drain (D)
1

ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS RATINGS UNIT

Drain to Source Voltage VDSS VGS = 0 50 V

Gate to Source Voltage VGSS VDS = 0 ±7.0 V

Drain Current (DC) ID(DC) ±0.1 A

Drain Current (pulse) ID(pulse) PW ≤ 10 ms, ±0.2 A

Duty Cycle ≤ 50 %

Total Power Dissipation PT 200 mW

Channel Temperature Tch 150 ˚C

Storage Temperature Tstg –55 to +150 ˚C

Document No. D11234EJ1V0DS00 (1st edition)

Date Published June 1996 P
Printed in Japan
© 1996
 2SK2158

ELECTRICAL CHARACTERISTICS (TA = 25 ˚C)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT

Drain Cut-off Current IDSS VDS = 50 V, VGS = 0 1.0 µA

Gate Leakage Current IGSS VGS = ±7.0 V, VDS = 0 ±3.0 µA
Gate Cut-off Voltage VGS(off) VDS = 3 V, ID = 1.0 µA 0.5 0.7 1.1 V

Forward Transfer Admittance | yfs | VDS = 3 V, ID = 10 mA 20 mS

Drain to Source On-state Resistance RDS(on)1 VGS = 1.5 V, ID = 1.0 mA 32 50 Ω

Drain to Source On-state Resistance RDS(on)2 VGS = 2.5 V, ID = 10 mA 16 20 Ω

Drain to Source On-state Resistance RDS(on)3 VGS = 4.0 V, ID = 10 mA 12 15 Ω

Input Capacitance Ciss VDS = 3 V, VGS = 0 6 pF

Output Capacitance Coss f = 1.0 MHz 8 pF

Reverse Transfer Capacitance Crss 1 pF

Turn-On Delay Time td(on) VDD = 3 V, ID = 20 mA 9 ns

Rise Time tr VGS(on) = 3 V, RG = 10 Ω 48 ns

RL = 150 Ω
Turn-Off Delay Time td(off) 21 ns

Fall Time tf 31 ns

2
 2SK2158

TYPICAL CHARACTERISTICS (TA = 25 ˚C)

DERATING FACTOR OF FORWARD BIAS DRAIN CURRENT vs.

SAFE OPERATING AREA DRAIN TO SOURCE VOLTAGE
100 200

V
V

7
80 160 5
3. V
dT - Derating Factor - %

ID - Drain Current - mA
3.
2.5 V
60 120

40 80 2.0 V

20 40 1.5 V

VGS = 1.0 V
0 0
30 60 90 120 150 1 2 3 4 5
TA - Ambient Temperature - ˚C VDS - Drain to Source Voltage - V

FORWARD TRANSFER ADMITTANCE vs.

TRANSFER CHARACTERISITICS DRAIN CURRENT
100 1 000

|yfs| - Forward Transfer Admittance - S

VDS = 3 V VDS = 3 V

10
ID - Drain Current - mA

TA = –25 ˚C
TA = 75 ˚C 100 25 ˚C
1 25 ˚C
–25 ˚C
75 ˚C
0.1
10

0.01

0.001 1
0 1 2 0.1 1 10 100 1 000
VGS - Gate to Source Voltage - V ID - Drain Current - mA

DRAIN TO SOURCE ON-STATE RESISTANCE DRAIN TO SOURCE ON-STATE RESISTANCE

RDS(on) - Drain to Source On-state Resistance - Ω

RDS(on) - Drain to Source On-state Resistance - Ω

vs. DRAIN CURRENT vs. DRAIN CURRENT

70 70
VGS = 1.5 V VGS = 2.5
1.5 V
60 60

50 50

40 TA = 75 ˚C 40
25 ˚C
30 30
–25 ˚C TA = 75 ˚C
20 20 25 ˚C

10 10 –25 ˚C

0 0
0.1 1 10 100 1 10 100 1 000
ID - Drain Current - mA ID - Drain Current - mA

3
 2SK2158

RDS(on) - Drain to Source On-state Resistance - Ω DRAIN TO SOURCE ON-STATE RESISTANCE DRAIN TO SOURCE ON-STATE RESISTANCE

RDS(on) - Drain to Source On-state Resistance - Ω

vs. DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE
70 50
VGS = 4.0 V
60
40
50
ID = 10 mA
30
40
ID = 100 mA
30 TA = 75 ˚C 20
20 25 ˚C
–25 ˚C 10
10

0
1 10 100 1 000 0 2 4 6
ID - Drain Current - mA VGS - Gate to Source Voltage - V

CAPACITANCE vs.
DRAIN TO SOURCE VOLTAGE SWITCHING CHARACTERISTICS
10 100
tr

td(on), tr, td(off), tf - Switching Time - ns

Ciss, Coss, Crss - Capacitance - pF

Ciss
5 50

Coss
tf
2 20
td(off)
1 10 td(on)

0.5 5

0.2 Crss 2 VDD = 3 V

VGS = 0 VGS(on) = 3 V
f = 1 MHz RG = 10 Ω
0.1 1
1 2 5 10 20 50 100 10 20 50 100 200 500 1 000
VDS - Drain to Source Voltage - V ID - Drain Current - mA

SOURCE TO DRAIN DIODE

FORWARD VOLTAGE
1
ISD - Source to Drain Current - A

0.1

0.01

0.001
0.4 0.8 1.2 1.6 2
VSD - Source to Drain Voltage - V

4
 2SK2158

REFERENCE

Document Name Document No.

NEC semiconductor device reliability/quality control system TEI-1202

Quality grade on NEC semiconductor devices IEI-1209

Semiconductor device mounting technology manual C10535E

Guide to quality assurance for semiconductor devices MEI-1202

Semiconductor selection guide X10679E

5
 2SK2158

No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this
document.
NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual
property rights of third parties by or arising from use of a device described herein or any other liability arising
from use of such device. No license, either express, implied or otherwise, is granted under any patents,
copyrights or other intellectual property rights of NEC Corporation or others.
While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customer must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
NEC devices are classified into the following three quality grades:
“Standard“, “Special“, and “Specific“. The Specific quality grade applies only to devices developed based on
a customer designated “quality assurance program“ for a specific application. The recommended applications
of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each
device before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices in “Standard“ unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact NEC Sales Representative in advance.
Anti-radioactive design is not implemented in this product.

M4 94.11
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