1. Which of the following
Equal to VDS(on)
devices revolutionized the
computer industry?
b. D-MOSFET
c. E-MOSFET
d. Power FET
2. The voltage that turns on
an EMOS device is the
a. Gate-source cutoff
voltage
b. Pinch-off voltage
c. Threshold voltage
d. Knee voltage
3. Which of these may
appear on the data sheet of
an enhancement-mode
MOSFET?
a. VGS(th)
b. ID(on)
c. VGS(on)
d. All of the above
4. The VGS(on) of an n-
channel E-MOSFET is
a. Less than the threshold
voltage
b. Equal to the gate-source
cutoff voltage
c. Greater than VDS(on)
d. Greater than VGS(th)
5. An ordinary resistor is an b.
example of
c. Greater than VGS(th)
a. A three-terminal device
d. Negative
b. An active load
c. A passive load
10. With active-load
d. A switching device switching, the upper E-
MOSFET is a
a. Two-terminal device
6. An E-MOSFET with its
gate connected to its drain b. Three-terminal device
is an example of
c. Switch
a. A three-terminal device
d. Small resistance
b. An active load
c. A passive load
11. CMOS devices use
d. A switching device
a. Bipolar transistors
b. Complementary E-
7. An E-MOSFET that MOSFETs
operates at cutoff or in the
ohmic region is an example c. Class A operation
of
d. DMOS devices
a. A current source
b. An active load
12. The main advantage of
c. A passive load CMOS is its
d. A switching device a. High power rating
b. Small-signal operation
8. CMOS stands for c. Switching capability
a. Common MOS d. Low power consumption
b. Active-load switching
13. Power FETs are
c. p-channel and n-channel
devices
a. Integrated circuits
d. Complementary MOS
b. Small-signal devices
c. Used mostly with analog
9. VGS(on) is always signals
a. Less than VGS(th)
d. Used to switch large d. Depletion layers
currents

18. With CMOS, the upper

14. When the internal MOSFET is
temperature increases in a
power FET, the a. A passive load

a. Threshold voltage b. An active load

increases
c. Nonconducting
b. Gate current decreases
d. Complementary
c. Drain current decreases

d. Saturation current
19. The high output of a
increases
CMOS inverter is

a. VDD/2
15. Most small-signal E-
b. VGS
MOSFETs are found in
c. VDS
a. Heavy-current
applications d. VDD
b. Discrete circuits

c. Disk drives 20. The RDS(on) of a power

FET
d. Integrated circuits
a. Is always large

b. Has a negative
16. Most power FETS are
temperature coefficient
a. Used in high-current
c. Has a positive
applications
temperature coefficient
b. Digital computers
d. Is an active load
c. RF stages Choose the letter of the
best answer in each
d. Integrated circuits questions.

17. An n-channel E-MOSFET 1. FET amplifiers provide

conducts when it has ________.

a. VGS > VP A) excellent voltage gain

b. An N-Type inversion B) high input impedance

layer
C) low power consumption
c. VDS > 0
D) All of the above
 6. For what value of ID is gm D) 5 mS
equal to 0.5 gm0?
2. A BJT is a ________-
controlled device. A) 0 mA
10. Referring to the
A) current B) 0.25 IDSS following figure, calculate
gm for VGSQ = –1.25 V.
B) voltage C) 0.5 IDSS
MCQs in FET Amplifiers Fig.
C) power D) IDSS 03
D) resistance A) 2 mS
7. What is the typical value B) 2.5 mS
for the input impedance Zi
3. An FET is a ________- for JFETs? C) 2.75 mS
controlled device.
A) 100 kΩ D) 3.25 mS
A) current
B) 1 MΩ 11. Referring to this figure,
B) voltage obtain gm for ID = 6 mA.
C) 10 MΩ
C) power MCQs in FET Amplifiers Fig.
D) 1000 MΩ 04
D) resistance
8. Referring to the transfer A) 2.83 mS
characteristics shown
below, calculate gm at B) 3.00 mS
4. The E-MOSFET is quite
VGSQ = –1 V.
popular in ________ C) 3.25 mS
applications. MCQs in FET Amplifiers Fig.
01 D) 3.46 mS

A) 2 mS
A) digital circuitry
B) 3 mS 12. Referring to the figure
B) high-frequency below, determine the
C) 4 mS output impedance for VGS =
C) buffering
–3 V at VDS = 5 V.
D) 5 mS
D) All of the above
MCQs in FET Amplifiers Fig.
05
9. Use the following A) 100 kΩ
5. What is the range of gm
equation to calculate gm for
for JFETs?
a JFET having IDSS = 10 mA, B) 80 kΩ
A) 1 µS to 10 µS VP = –5 V, and VGSQ = –2.5
V. C) 25 kΩ
B) 100 µS to 1000 µS
MCQs in FET Amplifiers Fig. D) 5 kΩ
C) 1000 µS to 5000 µS 02

D) 10000 µS to 100000 µS A) 2 mS
13. Calculate gm and rd if
B) 3 mS yfs = 4 mS and yos = 15 ΩS.

C) 4 mS A) 4 mS, 66.7 kΩ
B) 4 mS, 15 kΩ
C) 66.7 kΩ, 4 mS
D) None of the above
14. The steeper the slope of
the ID versus VGS curve, the
________ the level of gm.
A) less
B) same
18. What is (are) the A) –3.48
function(s) of the coupling
capacitors C1 and C2 in an B) –3.56
FET circuit?
C) –3.62
A) to create an open circuit
D) –4.02
for dc analysis
22. For the fixed-bias
B) to isolate the dc biasing
configuration, if rd < 10 •
arrangement from the
RD, then Zo = ________.
applied signal and load
A) RD
C) to create a short-circuit
equivalent for ac analysis B) RD || rd

C) greater D) All of the above C) RG

15. When VGS = 0.5 Vp gm 19. Where do you get the D) -gm • (RD || rd)
is ________ the maximum level of gm and rd for an
value. FET transistor? 23. Which of the following
is a required condition to
A) one-fourth A) from the dc biasing simplify the equations for
arrangement Zo and Av for the self-bias
B) one-half configuration?
B) from the specification
C) three-fourths sheet A) rd ≤ 10RD
D) two-thirds C) from the characteristics B) rd = RD
D) All of the above C) rd ≥ 10RD
16. If ID = IDSS / 2, gm = D) None of the above
___________ gmo.
20. Referring to this figure, 24. Referring to this figure,
A) 1 find Zo if yos = 20 µS. calculate Zo if yos = 40 µS.
B) 0.707 MCQs in FET Amplifiers Fig. MCQs in FET Amplifiers Fig.
06 08
C) 0.5
A) 2.92 kΩ
D) 1.414
A) 1.85 kΩ B) 3.20 kΩ
B) 1.92 kΩ C) 3.25 kΩ
17. The more horizontal the
characteristic curves on the C) 2.05 kΩ D) 3.75 kΩ
drain characteristics, the
________ the output D) 2.15 kΩ 25. On which of the
impedance. following parameters does
21. Referring to this figure,
rd have no or little impact in
A) less calculate Av if yos = 20 µS.
a source-follower
MCQs in FET Amplifiers Fig. configuration?
B) same
07
A) Zi
C) greater
B) Zo
C) Av 29. Referring to this figure, B) –3.26
calculate Av for yos = 58 µS.
D) All of the above C) –2.95
MCQs in FET Amplifiers Fig.
11 D) –3.21

26. Referring to this figure, 33. Determine the value for

calculate Zo for VGSQ = –3.2 RD if the ac gain is 8.
V. A) –7.29
MCQs in FET Amplifiers Fig.
MCQs in FET Amplifiers Fig. B) –7.50 15
09
C) –8.05

D) –8.55 A) 1.51 kΩ
A) 362.52 Ω
30. Referring to this figure, B) 1.65 kΩ
B) 340.5 Ω calculate Zi if rd = 19 kΩ.
C) 1.85 kΩ
C) 420.5 Ω MCQs in FET Amplifiers Fig.
12 D) 2.08 kΩ
D) 480.9 Ω
34. Referring to this figure,
calculate the value of RD if
A) 2.42 MΩ the ac gain is 10. Assume
27. Referring to this figure, VGSQ = ¼Vp.
calculate Zi for yos = 20 µS. B) 2.50 MΩ
Assume VGSQ = −2.2V. MCQs in FET Amplifiers Fig.
C) 2.53 MΩ 16
MCQs in FET Amplifiers Fig.
10 C) 2.59 MΩ

31. Referring to this figure, A) 2.2 kΩ

calculate Zo if rd = 19 kΩ.
A) 300.2 Ω B) 2.42 kΩ
MCQs in FET Amplifiers Fig.
B) 330.4 Ω 13 C) 2.62 kΩ

C) 340.5 Ω D) 2.82 kΩ

D) 350.0 Ω A) 1.75 kΩ 35. For an FET small-signal

28. Which of the following
is (are) related to depletion-
type MOSFETs?
A) VGSQ can be negative,
zero, or positive.
B) gm can be greater or
smaller than gm0’.
C) ID can be larger than
IDSS’.
amplifier, one could go
B) 1.81 kΩ about troubleshooting a
circuit by ________.
C) 1.92 kΩ
A) viewing the circuit board
D) 2.00 kΩ
for poor solder joints
32. Referring to this figure,
B) using a dc meter
calculate Av if rd = 19 kΩ.
C) applying a test ac signal
MCQs in FET Amplifiers Fig.
14 D) All of the above

D) All of the above

A) –2.85
 A) JFET D) VGS to VDS

B) BJT 8. The transconductance gm

_____ as the Q-point moves
C) D-type MOSFET from Vp to IDSS
D) E-type MOSFET

4. _____ is the amplification A) decreases

factor in FET transistor
amplifiers. B) remains the same

C) increases

A) Zi D) None of the above

B) gm 9. gm has its maximum

value for a JFET at _____.
C) ID
Fill-in-the-blanks Questions D) IG
A) Vp
5. _____ is an undefined
quantity in a JFET. B) 0.5 Vp
1. A field-effect transistor
amplifier provides excellent A) Ai C) 0.3 Vp
voltage gain with the added
feature of a _____ input B) Av D) IDSS
impedance.
C) Zi 10. The value of gm is at its
A) low maximum gm0 at VGS equal
D) Zo to _____ and zero at VGS
B) medium equal to _____.
C) high A) 0 V, Vp
6. The _____ controls the
D) None of the above _____ of an FET. B) Vp, 0 V
2. The depletion MOSFET C) 0.5Vp, 0.3Vp
circuit has a _____ input
impedance than a similar A) ID’, VGS D) 0.3Vp , 0.5Vp
JFET configuration.
B) VGS’, ID 11. The range of input
A) much higher impedance Zi for MOSFETs
C) IG’, VDS
is _____.
B) much lower
D) IG’, ID
C) lower
7. Transconductance is the
A) 1 kΩ –10 kΩ
D) higher ratio of changes in _____.
B) 100 kΩ –1 MΩ
3. The _____ is quite
popular in digital circuits, C) 10 MΩ –100 MΩ
A) ID to VGS
especially in CMOS circuits
that require very low power D) 1012 Ω to 1015 Ω
B) ID to VDS
consumption.
C) VGS to IG
12. The range of output
admittance yos for FETs is
_____.
A) 5 µS –10 µS
B) 10 µS –50 µS
C) 50 µS –100 µS
D) 200 µS –500 µS
13. The _____ configuration
has the distinct
disadvantage of requiring
two dc voltage sources.
A) self-bias
B) voltage-divider
C) fixed-bias
D) All of the above
14. _____ is the network-
input impedance for a JFET
fixed-bias configuration.
A) RG
B) RD
C) Zero
D) None of the above
15. _____ is a required step
in order to calculate Zo.
A) Setting IG equal to zero
B) Setting Vi equal to zero
C) Setting ID equal to IDSS
D) None of the above
16. _____ configuration(s)
has (have) Zo ≈ RD.
A) Fixed-bias
B) Self-bias
C) Voltage-divider
D) All of the above
17. _____ is the only
parameter that is different
between voltage-divider
and fixed-bias
configurations.
A) Zi
B) Av
C) Zo
D) None of the above
18. The input and output
signals are in phase in a
_____ configuration.
A) fixed-bias
B) source-follower
C) voltage-divider
D) self-bias
19. A _____ configuration
has a voltage gain less than
1.
A) fixed-bias
B) self-bias
C) source-follower
D) voltage-divider
20. The input and output
signals are 180º out of
phase in a _____
configuration.
A) source-follower
B) common-gate
C) common-drain
D) voltage-divider
21. The isolation between
input and output circuits in
the ac equivalent circuit is
lost in a _____
configuration.
A) common-gate
B) common-source
C) common-drain
D) None of the above
22. The _____ configuration
has an input impedance,
which is other than RG.
A) common-source
B) common-gate
C) common-drain
D) None of the above
23. The gate-to-source
voltage VGS of a(n) _____
must be larger than the
threshold VGS(Th) for the
transistor to conduct.
A) JFET
B) D-type MOSFET
C) E-type MOSFET
D) None of the above
24. rd changes from one
operation region to another
with _____ values typically
occurring at _____ levels of
VGS (closer to zero).
A) lower, lower
B) lower, higher
C) higher, lower
D) None of the above
25. The _____ does not
support Shockley’s
equation.

A) JFET

B) D-type MOSFET

C) E-type MOSFET

D) None of the above