Zener region 27

Zener Potential
Avalanch Breakdown

Zener Breakdown

Zener Diode
PIV or PRV

The max reverse-bias potential that can be applied before entering the Zener
region is called the peak inverse voltage.
 Comparison of Si, Ge & GaAs Diodes
28

Knee/Threshold Voltage
Ge 0.3V
Si 0.7V
GaAs 1.2V

Reverse Saturation Current

Reverse Breakdown Voltage

 Temperature Effects 29

• In the forward-bias region the characteristic of a silicon

diode shift to the left at a rate of 2.5 mV per centigrade
degree increase in temperature.
• In the reverse
reverse-bias
bias region the reverse saturation current
of a silicon diode doubles for every 100C rise in
temperature.
• The reverse breakdown voltage of a semiconductor diode
will inc
increase
ease oor dec
decrease
ease with tempe
temperature
atu e depending on
the Zener potential.
Variation in diode characteristics with 30

temperature change
 The current commercial use of Ge, Si and 31

GaAs
• Ge: Germanium is in limited production due to its temp
sensitivity and high reverse saturation current. It is
commercially available but is limited to some high speed
applications and applications that use its sensitivity to light and
heat such as photo detectors and security systems.
systems
• Si: Without question the semiconductor used most frequently
for the full range of electronic devices. It has the advantage of
available at low cost and has relatively low reverse saturation
current, good temp characteristic. Its used to design of large-
scale
l integrated
i t t d circuits
i it andd processing
i technology.
t h l
• GaAs: Its high speed characteristics are in more demand
every day,
day with the added features of low reverse saturation
current, excellent temp sensitivities and high breakdown
voltage. Its application are in optoelectronic devices.
Home work
P-13 to 21

3
2
 IDEAL VERSUS PRACTICAL 33

FIGURE 1.21a Conduction state of the ideal diode as determined by the direction of conventional current
established by the network.

FIGURE 1.21b Non-conduction state of the ideal diode as determined by the direction of conventional current
established by the network.
 34
FIGURE 1.22: Ideal diode: (a) symbol; (b) characteristics.
 35
IDEAL VERSUS PRACTICAL

FIGURE 1.22: Ideal versus actual semiconductor characteristics

 36

Home work
P-22,23,24