GT30J324

TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT

GT30J324
High Power Switching Applications
Unit: mm
Fast Switching Applications

· The 4th generation

· Enhancement-mode
· Fast switching (FS): Operating frequency up to 50 kHz (reference)
High speed: tf = 0.05 µs (typ.)
Low switching loss : Eon = 1.00 mJ (typ.)
: Eoff = 0.80 mJ (typ.)
· Low saturation voltage: VCE (sat) = 2.0 V (typ.)
· FRD included between emitter and collector

Maximum Ratings (Ta = 25°C)

Characteristics Symbol Rating Unit

Collector-emitter voltage VCES 600 V

Gate-emitter voltage VGES ±20 V
JEDEC ―
DC IC 30
Collector current A JEITA ―
1 ms ICP 60
TOSHIBA 2-16C1C
Emitter-collector forward DC IF 30
A Weight: 4.6 g (typ.)
current 1 ms IFM 60
Collector power dissipation
PC 170 W
(Tc = 25°C)
Junction temperature Tj 150 °C
Storage temperature range Tstg −55 to 150 °C

Thermal Characteristics

Characteristics Symbol Max Unit

Thermal resistance (IGBT) Rth (j-c) 0.735 °C/W

Thermal resistance (diode) Rth (j-c) 1.90 °C/W

Equivalent Circuit

Collector

Gate

Emitter

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Electrical Characteristics (Ta = 25°C)

Characteristics Symbol Test Condition Min Typ. Max Unit

Gate leakage current IGES VGE = ±20 V, VCE = 0 ― ― ±500 nA

Collector cut-off current ICES VCE = 600 V, VGE = 0 ― ― 1.0 mA
Gate-emitter cut-off voltage VGE (OFF) IC = 3 mA, VCE = 5 V 3.5 ― 6.5 V
Collector-emitter saturation voltage VCE (sat) IC = 30 A, VGE = 15 V ― 2.0 2.45 V
Input capacitance Cies VCE = 10 V, VGE = 0, f = 1 MHz ― 4650 ― pF

Turn-on delay time td (on) ― 0.09 ―

Rise time tr ― 0.07 ―

Turn-on time ton Inductive Load ― 0.24 ―

Switching time µs
Turn-off delay time td (off) VCC = 300 V, IC = 30 A ― 0.30 ―

Fall time tf VGG = +15 V, RG = 24 Ω ― 0.05 ―

(Note 1)
Turn-off time toff ― 0.43 ―
(Note 2)
Turn-on switching
Eon ― 1.00 ―
loss
Switching loss mJ
Turn-off switching
Eoff ― 0.80 ―
loss
Peak forward voltage VF IF = 30 A, VGE = 0 ― ― 3.8 V
Reverse recovery time trr IF = 30 A, di/dt = −100 A/µs ― 60 ― ns

Note 1: Switching time measurement circuit and input/output waveforms

VGE
90%
10%
0
-VGE

IC L VCC IC
90% 90%
RG
VCE VCE 10% 10% 10% 10%
0
td (off) td (on)
tf tr
toff ton

Note 2: Switching loss measurement waveforms

VGE
90%
0 10%

IC

VCE 5%
0

Eoff Eon

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IC – VCE VCE – VGE

60 20
Common emitter Common emitter
10

(V)
Tc = −40°C
50 Tc = 25°C 20 15
16
(A)

VCE
40 9
IC

Collector-emitter voltage
12
Collector current

30

8
20 60

VGE = 8 V 30
4
10
IC = 10 A

0 0
0 1 2 3 4 5 0 4 8 12 16 20

Collector-emitter voltage VCE (V) Gate-emitter voltage VGE (V)

VCE – VGE VCE – VGE

20 20
Common emitter Common emitter
(V)

(V)

Tc = 25°C Tc = 125°C
16 16
VCE

VCE
Collector-emitter voltage

Collector-emitter voltage

12 12

8 8
30 30
60
60
4 4

IC = 10 A IC = 10 A

0 0
0 4 8 12 16 20 0 4 8 12 16 20

Gate-emitter voltage VGE (V) Gate-emitter voltage VGE (V)

IC – VGE VCE (sat) – Tc

60 4
Common emitter Common emitter
Collector-emitter saturation voltage

50 VCE = 5 V VGE = 15 V
60
(A)

3
40
VCE (sat) (V)
IC
Collector current

30
30 2

20
IC = 10 A
1
10 25

Tc = 125°C
−40
0 0
0 4 8 12 16 20 −60 −20 20 60 100 140

Gate-emitter voltage VGE (V) Case temperature Tc (°C)

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Switching time ton, tr, td (on) – RG Switching time ton, tr, td (on) – IC
10 3
Common emitter Common emitter
VCC = 300 V VCC = 300 V
(µs)

VGG = 15 V VGG = 15 V

(µs)
3 IC = 30 A RG = 24 Ω
1 : Tc = 25°C
: Tc = 25°C
ton, tr, td (on)

: Tc = 125°C

ton, tr, td (on)

: Tc = 125°C
(Note 1) (Note 1)
1
0.3

0.3 ton
ton
Switching time

Switching time
0.1
0.1 td (on)
td (on)

tr 0.03
0.03 tr

0.01 0.01
1 3 10 30 100 300 1000 0 5 10 15 20 25 30

Gate resistance RG (Ω) Collector current IC (A)

Switching time toff, tf, td (off) – RG Switching time toff, tf, td (off) – IC
10 10
Common emitter Common emitter
VCC = 300 V VCC = 300 V
VGG = 15 V VGG = 15 V
(µs)
(µs)

3 IC = 30 A 3 RG = 24 Ω
: Tc = 25°C : Tc = 25°C
: Tc = 125°C
toff, tf, td (off)
toff, tf, td (off)

: Tc = 125°C
1 (Note 1) 1 (Note 1)

toff

0.3 0.3 td (off)

toff
tf
Switching time
Switching time

td (off)
0.1 0.1

0.03 tf 0.03

0.01 0.01
1 3 10 30 100 300 1000 0 5 10 15 20 25 30

Gate resistance RG (Ω) Collector current IC (A)

Switching loss Eon, Eoff – RG Switching loss Eon, Eoff – IC

30 3
Common emitter
VCC = 300 V
VGG = 15 V
Eon
(mJ)

(mJ)

IC = 30 A 1
10
: Tc = 25°C
: Tc = 125°C
(Note 2)
Eon, Eoff

Eon, Eoff

3 Eon 0.3

Eoff
Switching loss

Switching loss

1 0.1

Eoff Common emitter

VCC = 300 V
VGG = 15 V
0.3 0.03 RG = 24 Ω
: Tc = 25°C
: Tc = 125°C
(Note 2)
0.1 0.01
1 3 10 30 100 300 1000 0 5 10 15 20 25 30

Gate resistance RG (Ω) Collector current IC (A)

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C – VCE VCE, VGE – QG

10000 500 20
Common emitter
RL = 10 Ω

(V)
3000 Cies Tc = 25°C

(V)
400 16

VCE
(pF)

Gate-emitter voltage VGE

1000

Collector-emitter voltage
Capacitance C

300 12
200
300 300

200 8
100 VCE = 100 V
Common emitter Coes
VGE = 0 100 4
30 f = 1 MHz
Cres
Tc = 25°C
10 0 0
0.1 0.3 1 3 10 30 100 300 1000 0 40 80 120 160 200

Collector-emitter voltage VCE (V) Gate charge QG (nC)

IF – VF trr, Irr – IF
60 10 1000
Common collector
(A)

50 VGE = 0

(ns)
Irr
(A)

3
Reverse recovery current Irr

300

trr
40
Forward current IF

Reverse recovery time

30 1 100
trr

20
25 Common collector
0.3 30
di/dt = −100 A/µs
10 Tc = 125°C VGE = 0
: Tc = 25°C
−40
: Tc = 125°C
0 0.1 10
0 0.6 1.2 1.8 2.4 3.0 3.6 0 5 10 15 20 25 30

Forward voltage VF (V) Forward current IF (A)

Safe Operating Area Reverse Bias SOA

100 100
IC max (pulsed)*
50 µs*
IC max (continuous)
30 30
100 µs*
(A)

(A)

10 10
IC

IC

DC operation
Collector current

Collector current

3 3
1 ms*
*: Single pulse
1 Tc = 25°C 1
Curves must be
derated linearly
0.3 0.3
with increase in Tj ≤ 125°C
10 ms*
temperature. VGE = 15 V
RG = 24 Ω
0.1 0.1
1 3 10 30 100 300 1000 1 3 10 30 100 300 1000

Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V)

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rth (t) – tw
102
(°C/W)

101
FRD
rth (t)

100
Transient thermal resistance

IGBT
10−1

10−2

10−3

Tc = 25°C
10−4
10−5 −4 −3 −2 −1 0
10 10 10 10 10 101 102

Pulse width tw (s)

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RESTRICTIONS ON PRODUCT USE 000707EAA

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devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical
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Handbook” etc..

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