Lecture5 Film Deposition

Introduction to
Microelectronic Fabrication
by
Richard C. Jaeger
Distinguished University Professor
ECE Department
Auburn University
Chapter 6
Film Deposition
© 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. For the exclusive use of adopters of the book
This material is protected under all copyright laws as they currently exist. No Introduction to Microelectronic Fabrication,
portion of this material may be reproduced, in any form or by any means, Second Edition by Richard C. Jaeger. ISBN0-201-
without permission in writing from the publisher. 44494-1.
Copyright Notice
• © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All

rights reserved. This material is protected under all copyright
laws as they currently exist. No portion of this material may be
reproduced, in any form or by any means, without permission in
writing from the publisher.
• For the exclusive use of adopters of the book Introduction to

Microelectronic Fabrication, Second Edition by Richard C.
Jaeger. ISBN0-201-44494-1.
© 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. This For the exclusive use of adopters of the book
material is protected under all copyright laws as they currently exist. No portion of this Introduction to Microelectronic Fabrication, Second
material may be reproduced, in any form or by any means, without permission in writing Edition by Richard C. Jaeger. ISBN0-201-44494-1.
from the publisher.
CVD
Chemical Vapor Deposition
Figure 6.8
Four types of CVD systems. (a) Atmospheric-pressure reactor (b) hot-wall low-pressure (LPCVD) system in a
three-zone furnace (c) parallel-plate plasma-enhanced system (d) photo-enhanced (PECVD) system using a
three-zone furnace. Copyright 1983 Bell Telephone Laboratories, Inc. Reprinted with permission from Ref. [2].
from the publisher.
CVD
Polysilicon Deposition
•Low Pressure Chemical Vapor Deposition (LPCVD)
– 25-150 Pa
•Thermal Decomposition of Silane

– 100% Silane
– 20-30% Silane in Nitrogen
600 o C
SiH 4  → Si + 2H 2
– 100-200 Å/min at 600-650o C
from the publisher.
CVD
Silicon Dioxide Deposition
Deposition of Silicon Dioxide over Aluminum (300 - 500 C)
SiH 4 + O2 → SiO2 + 2H 2 T ≤ 577 o C
Phosphous Doped SiO 2 - Atmospheric Pressure or LPCVD

4PH 3 + 5O2 → 2P2O5 + 6H 2
SiO2 containing 6-8% phosphorus will
soften and flow at 1000-1100o C.
Higher Temperature Prior to Metallization
Dichlorosilane Reaction at 900o C “P-glass reflow” can be used to
SiCl2 H 2 + 2N 2O → SiO2 + 2N 2 + 2HCl smooth surface topology.
LPCVD Decomposition of TEOS 650 - 750o C

Si(OC 2 H 5 )4 → SiO 2 + byproducts
from the publisher.
Film Deposition
Deposited Oxide Properties
from the publisher.
CVD
Silicon Nitride
Silicon Nitride
Oxidation Mask for Recessed Oxidation
Final Passivation Layer Over Die Surface
Silane Reaction with Ammonia - 700 - 900 o C at Atmospheric Pressure

3SiH 4 + 4NH 3 → Si3 N 4 + 12H 2
Dichlorosilane Reaction - LPCVD at 700 - 800 o C

3SiCl2 H 2 + 4NH 3 → Si3 N 4 + 6HCl + 6H 2
Plasma Reaction of Silane with Nitrogen

2SiH 4 + N 2 → 2SiNH + 3H 2
Plasma Reaction of Silane with Ammonia (Argon Plasma)

SiH4 + NH 3 → SiNH + 3H 2
from the publisher.
CVD
Metal Deposition (Mo, Ta, Ti, W)
Tungsten - Thermal, Plasma or Optical Assisted Decomposition of WF6
WF6 → W + 3F2
Tungsten - Reduction of WF6 with Hydrogen

WF6 + 3H 2 → W + 6HF
Mo, Ta and Ti - LPCVD Reaction with Hydrogen

2MCl5 + 5H 2 → 2M + 10HCl
−−−−−−
Copper is Deposited by "Standard" Plating Techniques
from the publisher.
Film Deposition
Epitaxial Growth
• Vapor Phase Epitaxy
• Liquid Phase Epitaxy

– Compound Semiconductors
• Molecular Beam Epitaxy

– Compound Semiconductors
• III-V Compound Semiconductors

– GaAs, InP, GaInAs, InAs …
from the publisher.
Epitaxial Growth
Vapor Phase Epitaxy
Gas diffuses from gas stream
and reacts at the surface
D 
JS = kS N S J g =  g (N g − N S )= hg (N g − N S )
δ 
JS = J g
JS k h Ng
Growth Rate v= = S g
N k S + hg N
Figure 6.9
Ng
Mass Transfer Limited : v ≅ hg for k S >> hg
N
Ng
Surface Reaction Limited : v ≅ k S for hg >> k S
N
from the publisher.
Epitaxial Growth
Growth Rates
Reversible Deposition Process at 1200o C
SiCl4 (gas) + 2H 2 (gas) ↔ Si(solid) + 4HCl(gas)
HCl in Input Stream can be Used to Clean Surface
Competing Etching Reaction

SiCl4 (gas) + Si(solid) ↔ 2SiCl2 (gas)
Alternative - Pyrolytic Decomposition of Silane

Figure 6.10 o
Temperature dependence of the silicon epitaxial growth SiH 4 600
 C
→ Si + 2H 2
process for four different sources. The growth is surface-
reaction-limited in region A and is mass-transfer-limited in
region B. Reprinted with permission from Philips Journal
of Research from Ref. [3].
from the publisher.
Epitaxial Growth
Vapor Phase Systems
from the publisher.
Epitaxial Growth
Growth in Silicon Tetrachloride
Single Crystal Silicon Growth for
Rates Below 2 µm/min
Etching for High SiCl4

Concentrations
from the publisher.
Epitaxial Growth
Impurity Redistribution
Moving Boundary Diffusion Problem
∂ 2 N ∂N ∂N
D 2 = + vx
∂x ∂t ∂x
from the publisher.
Epitaxial Growth
Geometrical Model
∂ 2 N ∂N ∂N
D 2
= + vx
∂x ∂t ∂x
Solution is Superposition of Two Cases
N (x,t ) = N1 (x,t ) + N 2 (x,t )
Undoped Epi− Layer on Uniformly Doped Substrate

NS   x − x 
N1(x,t ) = 1+ erf  epi

2   2 DS t 
Doped Epi− Layer on Undoped Substrate

Figure 6.4 NE  x−x  v x  x + x 
N 2 (x,t ) = 1+ erfc epi
 + exp x erfc epi

2   2 DE 
t D E  2 D E t 
from the publisher.
Epitaxial Growth
Pattern Shift
• Pattern Shift During

Epitaxial Growth Over an
n+ Buried Layer.
• Pattern is Both Shifted and
Distorted in Shape
Figure 6.15
from the publisher.
Film Deposiiont
References & Further Reading
from the publisher.
End of Chapter 6
© 2002 Pearson Education, Inc., Upper Saddle River, NJ. All rights reserved. For the exclusive use of adopters of the book
This material is protected under all copyright laws as they currently exist. No Introduction to Microelectronic Fabrication,
portion of this material may be reproduced, in any form or by any means, Second Edition by Richard C. Jaeger. ISBN0-201-
without permission in writing from the publisher. 44494-1.

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Introduction to

• © 2002 Pearson Education, Inc., Upper Saddle River, NJ. All

• For the exclusive use of adopters of the book Introduction to

•Thermal Decomposition of Silane

– 100-200 Å/min at 600-650o C

Phosphous Doped SiO 2 - Atmospheric Pressure or LPCVD

LPCVD Decomposition of TEOS 650 - 750o C

Silane Reaction with Ammonia - 700 - 900 o C at Atmospheric Pressure

Dichlorosilane Reaction - LPCVD at 700 - 800 o C

Plasma Reaction of Silane with Nitrogen

Plasma Reaction of Silane with Ammonia (Argon Plasma)

Tungsten - Reduction of WF6 with Hydrogen

Mo, Ta and Ti - LPCVD Reaction with Hydrogen

• Liquid Phase Epitaxy

• Molecular Beam Epitaxy

• III-V Compound Semiconductors

HCl in Input Stream can be Used to Clean Surface

Competing Etching Reaction

Alternative - Pyrolytic Decomposition of Silane

Etching for High SiCl4

Solution is Superposition of Two Cases

N (x,t ) = N1 (x,t ) + N 2 (x,t )

Undoped Epi− Layer on Uniformly Doped Substrate

Doped Epi− Layer on Undoped Substrate

• Pattern Shift During

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