AO4932

Asymmetric Dual N-Channel MOSFET

SRFET TM

General Description Product Summary

The AO4932 uses advanced trench technology to provide FET1(N-Channel) FET2(N-Channel)

excellent RDS(ON) and low gate charge. The two MOSFETs VDS= 30V 30V
make a compact and efficient switch and synchronous ID= 11A (VGS=10V) 8A (VGS=10V)
rectifier combination for use in DC-DC converters. A
RDS(ON) RDS(ON)
monolithically integrated Schottky diode in parallel with
the synchronous MOSFET to boost efficiency further. < 12.5mΩ (VGS=10V) < 19mΩ (VGS=10V)
< 15mΩ (VGS=4.5V) < 23mΩ (VGS=4.5V)

100% UIS Tested 100% UIS Tested

100% Rg Tested 100% Rg Tested

SOIC-8
SRFETTM
Top View Bottom View Soft Recovery MOSFET: D1 D2
Integrated Schottky Diode
Top View

D2 G2
D2 S2/D1
G1 S2/D1
S1 S2/D1 G1 G2

S1 S2
Pin1

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Max FE1 Max FET2 Units
Drain-Source Voltage VDS 30 30 V
Gate-Source Voltage VGS ±12 ±20 V
Continuous Drain TA=25°C 11 8
ID
Current TA=70°C 9 6.5 A
C
Pulsed Drain Current IDM 60 40
Avalanche Current C IAS, IAR 15 19 A
C
Avalanche energy L=0.1mH EAS, EAR 11 18 mJ
TA=25°C 2 2
PD W
Power Dissipation B TA=70°C 1.3 1.3
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 48 62.5 °C/W
RθJA
Maximum Junction-to-Ambient A D Steady-State 74 90 °C/W
Maximum Junction-to-Lead Steady-State RθJL 32 40 °C/W

Rev 4: Nov 2011 www.aosmd.com Page 1 of 9

 AO4932

FET1 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=1mA, VGS=0V 30 V
VDS=30V, VGS=0V 0.5
IDSS Zero Gate Voltage Drain Current mA
TJ=125°C 500
IGSS Gate-Body leakage current VDS=0V, VGS= ±12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.1 1.65 2.1 V
ID(ON) On state drain current VGS=10V, VDS=5V 60 A
VGS=10V, ID=11A 10 12.5
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 15 18
VGS=4.5V, ID=9A 12 15 mΩ
gFS Forward Transconductance VDS=5V, ID=11A 75 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.4 0.7 V
IS Maximum Body-Diode + Schottky Continuous Current 4 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 930 1170 1400 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 90 128 170 pF
Crss Reverse Transfer Capacitance 45 89 125 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.7 1.4 2.1 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 16 20 24 nC
Qg(4.5V) Total Gate Charge 7 8.7 10.5 nC
VGS=10V, VDS=15V, ID=11A
Qgs Gate Source Charge 3.2 nC
Qgd Gate Drain Charge 3 nC
tD(on) Turn-On DelayTime 6 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.4Ω, 2.4 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 23 ns
tf Turn-Off Fall Time 4 ns
trr Body Diode Reverse Recovery Time IF=11A, dI/dt=500A/µs 5.5 7 8.5 ns
Qrr Body Diode Reverse Recovery Charge IF=11A, dI/dt=500A/µs 5 6.5 8 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 4: Nov. 2011 www.aosmd.com Page 2 of 9

 AO4932

FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

35 35
10V VDS=5V
30 4.5V 30
3V
25 2.75V 25

20 20
ID (A)

ID(A)
2.5V 125°C
15 15
25°C
10 10

5 VGS=2.25V 5

0 0
0 1 2 3 4 5 1.5 1.8 2.1 2.4 2.7 3
VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

14 1.8

VGS=4.5V Normalized On-Resistance VGS=10V

1.6 ID=11A
12
Ω)
RDS(ON) (mΩ

1.4
17
10 VGS=4.5V5
1.2 ID=9A
VGS=10V 2
8 10
1

6 0.8
5 10 15 20 25 30 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate
0
Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E)
18

25 1.0E+02
ID=11A
1.0E+01 125°C
20 40
1.0E+00
25°C
125°C
Ω)
RDS(ON) (mΩ

1.0E-01
IS (A)

15
1.0E-02

10 1.0E-03

25°C 1.0E-04

5 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev 4: Nov. 2011 www.aosmd.com Page 3 of 9

 AO4932

FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1500
VDS=15V
ID=11A
8 1200
Ciss

Capacitance (pF)
VGS (Volts)

6 900

4 600

Coss
2 300

Crss
0 0
0 5 10 15 20 25 0 5 10 V (Volts)
15 20 25 30
DS
Qg (nC) Figure 8: Capacitance Characteristics
Figure 7: Gate-Charge Characteristics

100.0 1000
TA=25°C
10µs
RDS(ON)
10.0 limited
100µs 100
Power (W)
ID (Amps)

1.0 1ms
10ms 10
0.1 TJ(Max)=150°C DC 10s
TA=25°C

0.0
1
0.01 0.1 1 10 100 0.00001 0.001 0.1 10 1000
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-
Figure 9: Maximum Forward Biased
to-Ambient (Note F)
Safe Operating Area (Note F)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZθJA.RθJA
Zθ JA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RθJA=90°C/W

0.1

0.01 PD

Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 4: Nov. 2011 www.aosmd.com Page 4 of 9

 AO4932

FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

1.E-01 0.9
20A
0.8 10A
1.E-02 0.7
VDS=30V 0.6

VSD (V)
0.5
IR (A)

1.E-03
0.4 5A
VDS=15V 0.3
1.E-04 0.2 IS=1A

0.1

1.E-05 0
0 50
100 150 200 0 50 100 150 200
Temperature (°C) Temperature (°C)
Figure 12: Diode Reverse Leakage Current vs. Figure 13: Diode Forward voltage vs. Junction
Junction Temperature Temperature

12 12 8 3
di/dt=800A/µs di/dt=800A/µs
10 125ºC 10 125ºC 2.5
6
8 8 2
25ºC
Qrr (nC)

25ºC
trr (ns)
Irm (A)

trr
6 6 4 1.5

S
Qrr
4 4 125ºC 1
125ºC
Irm 2 S
2 2 0.5
25ºC 25ºC
0 0 0 0
0 5 10 15 20 25 30 0 5 10 15 20 25 30
IS (A) IS (A)
Figure 14: Diode Reverse Recovery Charge and Peak Figure 15: Diode Reverse Recovery Time and
Current vs. Conduction Current Softness Factor vs. Conduction Current

10 10
12 3
Is=20A
125ºC Is=20A
8 8 10 2.5
125ºC
40
6 Qrr 25ºC 6 8 2
Qrr (nC)

Irm (A)

trr (ns)

25ºC
6 1.5
S

trr
4 4
125ºC 4 125ºC 1
S
2 2
Irm 2 0.5
25ºC 25ºC
0 0 0 0
0 200 400 600 800 1000 0 200 400 600 800 1000
µs)
di/dt (A/µ µs)
di/dt (A/µ
Figure 16: Diode Reverse Recovery Charge and Peak Figure 17: Diode Reverse Recovery Time and
Current vs. di/dt Softness Factor vs. di/dt

Rev 4: Nov. 2011 www.aosmd.com Page 5 of 9

 AO4932

FET2 Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±16V 10 µA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.2 1.8 2.4 V
ID(ON) On state drain current VGS=10V, VDS=5V 40 A
VGS=10V, ID=8A 15.5 19
mΩ
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 21 25
VGS=4.5V, ID=4A 18.6 23 mΩ
gFS Forward Transconductance VDS=5V, ID=8A 30 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 2.5 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 600 740 888 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 77 110 145 pF
Crss Reverse Transfer Capacitance 50 82 115 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 0.5 1.1 1.7 Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 12 15 18 nC
Qg(4.5V) Total Gate Charge 6 7.5 9 nC
VGS=10V, VDS=15V, ID=8A
Qgs Gate Source Charge 2 2.5 3 nC
Qgd Gate Drain Charge 2 3 5 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=1.8Ω, 3.5 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 19 ns
tf Turn-Off Fall Time 3.5 ns
trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs 6 8 10 ns
Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 14 18 22 nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value
in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz.
Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev 4: Nov. 2011 www.aosmd.com Page 6 of 9

 AO4932

FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

30 30
10V VDS=5V
4V
25 3.5V 25
5V

20 20

ID(A)
ID (A)

3V
15 15

10 10
125°C
VGS=2.5V 5
5 25°C

0 0

0 1 2 3 4 5 1 1.5 2 2.5 3 3.5 4

VDS (Volts) VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

30 1.6

Normalized On-Resistance VGS=10V

ID=8A
25 1.4
Ω)
RDS(ON) (mΩ

VGS=4.5V
17
20 1.2 5
VGS=4.5V
ID=4A
2
15 1
10

VGS=10V
10 0.8
0 5 10 15 20 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Gate 0
Figure 4: On-Resistance vs. Junction Temperature
Voltage (Note E) (Note E) 18

40 1.0E+02
ID=8A
35 1.0E+01
40
1.0E+00
30
Ω)
RDS(ON) (mΩ

1.0E-01 125°C
-IS (A)

25
125°C
1.0E-02
20
1.0E-03 25°C
15
25°C 1.0E-04

10 1.0E-05
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

Rev 4: Nov. 2011 www.aosmd.com Page 7 of 9

 AO4932

P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1200
VDS=15V
ID=8A
1000
8
Ciss

Capacitance (pF)
800
VGS (Volts)

6
600

4
400
Coss
2 200
Crss
0 0

0 3 6 g (nC) 9 12 15 0 5 10 15 20 25 30
Q VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 1000
TA=25°C
10µs
10.0 RDS(ON)

100µs 100
-ID (Amps)

Power (W)

1.0 1ms
10ms
10
0.1 TJ(Max)=150°C 10s
DC
TA=25°C

0.0
1
0.01 0.1 1 10 100
0.00001 0.001 0.1 10 1000
-VDS (Volts)
Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note F) to-Ambient (Note F)

10
D=Ton/T In descending order
Zθ JA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1
RθJA=90°C/W

0.1

0.01
PD

Ton
0.001 T
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

Rev 4: Nov. 2011 www.aosmd.com Page 8 of 9

 AO4932

Gate Charge Test Circuit & W aveform

Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & W aveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

ton toff

Unclamped Inductive Switching (UIS) Test Circuit & W aveforms

L 2
Vds E AR = 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev 4: Nov. 2011 www.aosmd.com Page 9 of 9