DATA SHEET

NPN SILICON TRANSISTOR

2SC2570A
HIGH FREQUENCY LOW NOISE AMPLIFIER

NPN SILICON EPITAXIAL TRANSISTOR

DESCRIPTION
The 2SC2570A is designed for use in Low Noise Amplifier of VHF & UHF stages.

FEATURES
• Low noise and high gain : NF = 1.5 dB TYP., Ga = 8 dB TYP. @f = 1.0 GHz, VCE = 10 V, IC = 5.0 mA
• Wide dynamic range : NF = 1.9 dB, Ga = 9 dB @f = 1 GHz, VCE = 10 V, IC = 15 mA

ORDERING INFORMATION

Part Number Quantity

2SC2570A Loose products (500 pcs)

2SC2570A-T Taping products (Box type) (2 500 pcs)

Remark To order evaluation samples, please contact your NEC sales office (available in 500-pcs units).

ABSOLUTE MAXIMUM RATINGS (TA = +25 °C)

Parameter Symbol Ratings Unit

Collector to Base Voltage VCBO 25 V

Collector to Emitter Voltage VCEO 12 V

Emitter to Base Voltage VEBO 3.0 V

Collector Current IC 70 mA

Total Power Dissipation Ptot 600 mW

Junction Temperature Tj 150 °C

Storage Temperature Tstg –65 to +150 °C

The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.

Document No. P10404EJ3V0DS00 (3rd edition)

Date Published November 1999 N CP(K) © 1980, 1999
Printed in Japan
 2SC2570A

ELECTRICAL CHARACTERISTICS (TA = +25 °C)

Parameter Symbol Test Conditions MIN. TYP. MAX. Unit

Note 1
DC Current Gain hFE VCE = 10 V, IC = 20 mA 40 – 200 –

Gain Bandwidth Product fT VCE = 10 V, IC = 20 mA – 5.0 – GHz

Note 2
Output Capacitance COb VCB = 10 V, IE = 0, f = 1.0 MHz – 0.7 0.9 pF

Insertion Power Gain |S21e| 2

VCE = 10 V, IC = 20 mA, f = 1.0 GHz 8 10 – dB

Noise Figure NF VCE = 10 V, IC = 5 mA, f = 1.0 GHz – 1.5 3.0 dB

Maximum Available Gain MAG VCE = 10 V, IC = 20 mA, f = 1.0 GHz – 11.5 – dB

Collector Cutoff Current ICBO VCB = 15 V, IE = 0 – – 0.1 µA

Emitter Cutoff Current IEBO VEB = 2.0 V, IC = 0 – – 0.1 µA

Notes 1. Pulse Measurement: PW ≤ 350 µs, Duty Cycle ≤ 2%

2. The emitter and case terminal should be connected to the guard terminal of the capacitance bridge.

2 Data Sheet P10404EJ3V0DS00

 2SC2570A

TYPICAL CHARACTERISTICS (TA = +25 °C)

TOTAL POWER DISSIPATION vs.

AMBIENT TEMPERATURE
600
Total Power Dissipation PT (mW)

free Air

400

200

0 50 100 150 200

Operating Ambient Temperature TA (°C)

DC CURRENT GAIN vs. COLLECTOR CURRENT vs.

COLLECTOR CURRENT BASE TO EMITTER VOLTAGE
200 50
VCE = 10 V VCE = 10 V

100
Collector Current IC (mA)
DC Current Gain hFE

10

50
5

20
1

10 0.5
0.5 1 5 10 50 0.5 0.6 0.7 0.8 0.9
Collector Current IC (mA) Base to Emitter Voltage VBE (V)

GAIN BANDWIDTH PRODUCT vs. INSERTION GAIN vs.

COLLECTOR CURRENT COLLECTOR CURRENT
7 15
VCE = 10 V VCE = 10 V
5 f = 1.0 GHZ
Gain Bandwidth Product fT (GHZ)

Insertion Gain S21e 2 (dB)

2
10

0.5
5

0.2

0.1 0
0.5 1 5 10 50 70 0.5 1 5 10 50 70
Collector Current IC (mA) Collector Current IC (mA)

Data Sheet P10404EJ3V0DS00 3

 2SC2570A

OUTPUT AND INPUT NOISE FIGURE vs.

CAPACITANCE vs. REVERSE VOLTAGE COLLECTOR CURRENT
2 7
f = 1.0 MHZ VCE = 10 V
f = 1.0 GHZ
6
Output Capacitance Cob (pF)
Input Capacitance Cib (pF)

Noise Figure NF (dB)

5
1
Cib
4
Cob
3

0.5 2

0.3 0
0 0.5 1 2 5 10 20 30 0.5 1 5 10 50 70
Collector to Base Voltage VCB (V) Collector Current IC (mA)
Emitter to Base Voltage VEB (V)

INSERTION POWER GAIN, MAXIMUM AVAILABLE INSERTION POWER GAIN, MAXIMUM AVAILABLE
GAIN vs. FREQUENCY GAIN vs. FREQUENCY

VCE = 10 V VCE = 10 V
Maximum Available Gain Gmax. (dB)

IC = 5 mA IC = 20 mA
Maximum Available Gain Gmax. (dB)
Insertion Power Gain S21e 2 (dB)

20 20
Insertion Power Gain S21e 2 (dB)

Gmax Gmax
S21e 2 S21e 2

10 10

0 0
0.1 0.2 0.4 0.6 0.8 1.0 2 0.1 0.2 0.4 0.6 0.8 1.0 2
Frequency f (GHZ) Frequency f (GHZ)

S-PARAMETER S-PARAMETER

0.10
0.11
0.39
0.12
0.38
0.13
0.37
0.14
0.36 0.15
VCE = 10 V 0.10
0.11
0.39
0.12
0.38
0.13
0.37
0.14
0.36 0.15
VCE = 10 V
0.35 0.1 0.35 0.1
0.0
9 0.40 6 0.0
9 0.40 6
1 90 80 0.3 1 90 80 0.3
0.4 100 4 0.1 0.4 100 4 0.1
8 70 8 70
0.0 2 110 0.3 7 0.0 2 110 0.3 7
1.0

1.0
0.9

0.9

IC = 5 mA IC = 20 mA
1.2

1.2
0.8

0.8

0.4 3 0.4 3
1.4

1.4

7 60 0.1 7 60 0.1
0.7

0.7

0 0
0.0 3 12 0.3 8 0.0 3 12 0.3 8
1.6

1.6

0.4 2 0.4 2
0.6

0.6
1.8

1.8

0.2 0.2
50 50
0.4 6

0
0.4 6

0
0.1 1

0.1 1
2.0

2.0

13 13
0.0

0.0
4

4
0.3

0.3
0.5

0.5
9

NT 0.4
Z0 = 50 Ω NT 0.4
Z0 = 50 Ω
0.4 5

0.4 5
0.2 0

0.2 0

NE NE
0.0

0.0
0

0
5

5
0.3

0.3
40

40
0

0
14

14

0.4 0.4
PO

O
0.0 TOR

0.0 TOR

P
Zo  OM

Zo  O M

3.0 3.0
 +JX CE C

 +JX CE C

0.6 0.6
0.4 4

0.4 4
A

A
0.2 9

0.2 9
ER

ER
6

6
0.2

0.2
 AN

 AN



1

1
0

0
T

0.3 0.3
30

30
0.03 GEN

0.03 GEN
EAC

EAC
15

15

0.8 0.8
4.0 4.0
ER

ER
0.22

0.22
D

D
ITIV

ITIV

1.0 1.0
0.28

0.28
0.47

0.47
0.02 OWAR

0.02 OWAR
POS

POS

5.0 5.0
1.0

1.0
20

20

0.2 0.2
1.5GHZ 1.5GHZ
THS T

THS T
REES

ES

0.8 0.8
0.23

0.23
0.27

0.27
0.48

0.48
S TO OF REFLECTION COEFFICIENT IN DEGRE
EFLECTION COEFFICIENT IN DEG

0.6 0.6
WAVELENG

WAVELENG

10 10
10

10

1.0
0.1 0.1
0.24

0.24

0.4 0.4
0.01

0.01
0.26

0.26
0.49

0.49

20 20
1.0 0.2
50
0.8 0.2
50
0.6
0.1

0.2

0.3

0.4

0.5

0.6

0.7
0.8
0.9
1.0

1.2

1.4
1.6
1.8
2.0

3.0

4.0

5.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7
0.8
0.9
1.0

1.2

1.4
1.6
1.8
2.0

3.0

4.0

5.0
10

20
50

10

20
50

0.8
0.25
0.25

0.25
0.25

0.4 1.5GH1.0
0

Z
0
0

0
0
0

RESISTANCE COMPONENT
R 1.5GHZ 50 S11e
RESISTANCE COMPONENT
R 50
2 ARD LOAD

0.02WARD LOAD

 Zo  0.2  Zo  0.2
S11e 0.6 1.0
0.01

0.01
0.24

0.24
0.49

0.49
0.26

0.26

0.4
20 20
03.GTHS ANGLE OF R

0.4 0.4
−10

−10

0.1 0.1
0.4 10 10
0.03GTH ANGLE
T W

0.4 0.6
0.2 0.6 .8 S22e 0.2
0.0O

0.23

0.23
0.48

0.48
0.27

0.27

0.8 S22e 0
−160

0.4 4 ELEN 60
−20

−20

0.2 0.2
1.0

1.0
−1
NT

EN T
.

5.0 5.0
0.22

0.22
N

O NE

0.2
0.47

0.47
0.28

0.28
PON
0.4 4 ELE

1.0 1.0
0.

MP

M
EA −J 

EA −J 

4.0 4.0
V

V
CO

CO
CT X 

CT X 
0.0WA

0.0WA

0.8 0.8
E R  Zo

 Zo
50

50
−3

−3

0.3 0.3
CE

CE
0.2 9

0.2 9
1

−1
0

0.2
AN

AN
0.2

0.2
6

6



1

0.6 0.6
3.0 3.0
ER

0.4 0.4
0.4 5

0.2 0

0.4 5

0.2 0
TIV

TIV
40

40
−4

−4
0.0

0.0
5

0.3

0.3
−1

−1

GA GA
0

0
0

NE 0.4 NE 0.4
0.5

0.5
0.4 6

0.1 1

0.4 6

0.1 1
0.0

0.0

−5 −5
2.0

2.0
4

0.3

0.3

0 30
9

3 0 0
−1 −1
1.8

1.8

0.2 0.2
0.6

0.6

7 0.1 7 0.1
1.6

1.6

0.0 3 −6 0.3 8 0.0 3 −6 0.3 8

0.7

0.7

0 2 0 0 2 0
0.4 −1 0.4 −1
1.4

1.4

2 2
0.8

0.8

8 0.1 8 0.1
1.2

1.2
0.9

0.9

0.0 2 0.0 2
1.0

1.0

−70 0.3 7 −70 0.3 7

0.4 −110 0.1 3 0.4 −110 0.1 3
9 −80 9 −80
0.0 −100 −90 0.3
6 0.0 −100 −90 0.3
6
1 0.15 4 1 0.15 4
0.4 0.10 0.4 0.10
0.11 0.14 0.35 0.11 0.14 0.35
0.40 0.12 0.13 0.40 0.12 0.13
0.39 0.36 0.39 0.36
0.38 0.37 0.38 0.37

4 Data Sheet P10404EJ3V0DS00

 2SC2570A

PACKAGE DIMENSION

TO-92 (UNIT:mm)

5.2 MAX.

5.5 MAX.
14.0 MIN.
0.5

1.77 MAX.
2.54
1.27

4.2 MAX.
1 2 3

1. BASE EIAJ : SC-43B

2. EMITTER JEDEC : TO-92
3. COLLECTOR IEC : PA33

Data Sheet P10404EJ3V0DS00 5

 2SC2570A

[MEMO]

6 Data Sheet P10404EJ3V0DS00

 2SC2570A

[MEMO]

Data Sheet P10404EJ3V0DS00 7

 2SC2570A

• The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
• No part of this document may be copied or reproduced in any form or by any means without the prior written
consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in
this document.
• NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property
rights of third parties by or arising from use of a device described herein or any other liability arising from use
of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other
intellectual property rights of NEC Corporation or others.
• Descriptions of circuits, software, and other related information in this document are provided for illustrative
purposes in semiconductor product operation and application examples. The incorporation of these circuits,
software, and information in the design of the customer's equipment shall be done under the full responsibility
of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third
parties arising from the use of these circuits, software, and information.
• While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices,
the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or
property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety
measures in its design, such as redundancy, fire-containment, and anti-failure features.
• NEC devices are classified into the following three quality grades:
"Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a
customer designated "quality assurance program" for a specific application. The recommended applications of
a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device
before using it in a particular application.
Standard: Computers, office equipment, communications equipment, test and measurement equipment,
audio and visual equipment, home electronic appliances, machine tools, personal electronic
equipment and industrial robots
Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster
systems, anti-crime systems, safety equipment and medical equipment (not specifically designed
for life support)
Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life
support systems or medical equipment for life support, etc.
The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books.
If customers intend to use NEC devices for applications other than those specified for Standard quality grade,
they should contact an NEC sales representative in advance.
M7 98. 8