SPI80N03S2L-04

SPP80N03S2L-04,SPB80N03S2L-04

OptiMOS Buck converter series

Product Summary
Feature
VDS 30 V
• N-Channel
RDS(on) max. SMD version 3.9 mΩ
• Enhancement mode
ID 80 A
• Logic Level
• Excellent Gate Charge x RDS(on) P- TO262 -3-1 P- TO263 -3-2 P- TO220 -3-1

product (FOM)
• Superior thermal resistance
• 175°C operating temperature
• Avalanche rated
• dv/dt rated

Type Package Ordering Code Marking

SPP80N03S2L-04 P- TO220 -3-1 Q67042-S4113 2N03L04
SPB80N03S2L-04 P- TO263 -3-2 Q67042-S4112 2N03L04
SPI80N03S2L-04 P- TO262 -3-1 Q67042-S4114 2N03L04
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Continuous drain current 1) ID A
TC=25°C 80
80
Pulsed drain current I D puls 320
TC=25°C

Avalanche energy, single pulse EAS 380 mJ

ID=80 A , VDD=25V, RGS =25Ω

Repetitive avalanche energy, limited by Tjmax2) EAR 18

Reverse diode dv/dt dv/dt 6 kV/µs
IS=80A, VDS=24V, di/dt=200A/µs, Tjmax=175°C

Gate source voltage VGS ±20 V

Power dissipation Ptot 188 W
TC=25°C

Operating and storage temperature T j , Tstg -55... +175 °C

IEC climatic category; DIN IEC 68-1 55/175/56

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Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - case RthJC - 0.51 0.8 K/W
Thermal resistance, junction - ambient, leaded RthJA - - 62
SMD version, device on PCB: RthJA
@ min. footprint - - 62
@ 6 cm2 cooling area 3) - - 40

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage V(BR)DSS 30 - - V
V GS=0V, I D=1mA

Gate threshold voltage, VGS = VDS VGS(th) 1.2 1.6 2

ID = 130 µA

Zero gate voltage drain current I DSS µA

V DS=30V, V GS=0V, Tj=25°C - 0.01 1
V DS=30V, V GS=0V, Tj=125°C - 10 100
Gate-source leakage current I GSS - 1 100 nA
V GS=20V, VDS=0V

Drain-source on-state resistance RDS(on) mΩ

V GS=4.5V, ID=80A - 5 6.5
V GS=4.5V, ID=80A, SMD version - 4.6 6.2
Drain-source on-state resistance4) RDS(on)
V GS=10V, ID=80A - 3.6 4.2
V GS=10V, ID=80A, SMD version - 3.2 3.9

1Current limited by bondwire ; with an R

thJC = 0.8K/W the chip is able to carry I D= 163A at 25°C, for detailed
information see app.-note ANPS071E available at www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions

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Electrical Characteristics
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g fs V DS≥2*I D*RDS(on)max, 11.5 23 - S
ID=80A

Input capacitance Ciss V GS=0V, V DS=25V, - 2930 3900 pF

Output capacitance Coss f=1MHz - 1150 1520
Reverse transfer capacitance Crss - 268 402
Turn-on delay time t d(on) V DD=15V, VGS=10V, - 13 19 ns
Rise time tr ID=80A, - 20 30
Turn-off delay time t d(off) RG=2.2Ω - 54 81
Fall time tf - 19 28

Gate Charge Characteristics

Gate to source charge Q gs V DD=24V, ID=40A - 9 12 nC
Gate to drain charge Q gd - 27 41
Gate charge total Qg V DD=24V, ID=40A, - 79 105
V GS=0 to 10V

Gate plateau voltage V(plateau) V DD=24V, ID=40A - 3.2 - V

Reverse Diode
Inverse diode continuous IS TC=25°C - - 80 A
forward current
Inv. diode direct current, pulsed ISM - - 320
Inverse diode forward voltage VSD VGS =0V, I F=80A - 0.9 1.2 V
Reverse recovery time trr VR =15V, IF=lS, - 50 62 ns
Reverse recovery charge Qrr diF /dt=100A/µs - 61 76 nC

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1 Power dissipation 2 Drain current

Ptot = f (TC) ID = f (TC)
parameter: V GS≥ 10 V
SPP80N03S2L-04 SPP80N03S2L-04
200 90
W A

160
70

140
P tot

60

ID
120
50
100
40
80
30
60

20
40

20 10

0 0
0 20 40 60 80 100 120 140 160 °C 190 0 20 40 60 80 100 120 140 160 °C 190
TC TC

3 Safe operating area 4 Max. transient thermal impedance

ID = f ( V DS ) ZthJC = f (t p)
parameter : D = 0 , TC = 25 °C parameter : D = t p/T
3 SPP80N03S2L-04 SPP80N03S2L-04
10 10 1
K/W

A tp = 30.0µs
D

10 0
/I
DS
V
)=
(on

ZthJC

10 2 100 µs
DS

10 -1
R
ID

10 -2
1 ms
D = 0.50
0.20
1 -3 0.10
10 10 ms 10
0.05
DC
0.02
single pulse
10 -4 0.01

10 0 -1 0 1 2
10 -5 -7 -6 -5 -4 -3 -2 0
10 10 10 V 10 10 10 10 10 10 10 s 10
VDS tp

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5 Typ. output characteristic 6 Typ. drain-source on resistance

ID = f (VDS); Tj=25°C RDS(on) = f (ID)
parameter: tp = 80 µs parameter: V GS
SPP80N03S2L-04 SPP80N03S2L-04
190 Ptot = 188W 14
A Ω
j e f g
i h VGS [V]
160 a 2.5 12
b 2.8 11

RDS(on)
140 c 3.0
d 3.3
10
g
ID

e 3.5 9
120
f 3.8
8
g 4.0
100 f
h 4.3 7 h
i 4.5
80 6 i
j 10.0
5
e
60
4 j
d
40 3

2 VGS [V] =
c
20 e f g h i j
b 1 3.5 3.8 4.0 4.3 4.5 10.0
a
0 0
0 0.5 1 1.5 2 2.5 3 3.5 4 V 5 0 20 40 60 80 100 A 140
VDS ID

7 Typ. transfer characteristics 8 Typ. forward transconductance

ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max g fs = f(ID); Tj=25°C
parameter: tp = 80 µs parameter: gfs
160 35

A S

120
25
gfs
ID

100
20

80

15
60

10
40

5
20

0 0
0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 0 20 40 60 80 100 120 140 160 A 200
VGS ID

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9 Drain-source on-state resistance 10 Typ. gate threshold voltage

RDS(on) = f (Tj) VGS(th) = f (Tj)
parameter : ID = 80 A, VGS = 10 V parameter: V GS = VDS
SPP80N03S2L-04
10 2.5

V
8
650µA
RDS(on)

V GS(th)
7

6 1.5

5 98%
130µA

4 typ 1

2 0.5

0 °C 0
-60 -20 20 60 100 140 200 -60 -20 20 60 100 °C 180
Tj Tj

11 Typ. capacitances 12 Forward character. of reverse diode

C = f (VDS) IF = f (VSD)
parameter: V GS=0V, f=1 MHz parameter: Tj , tp = 80 µs
4
10 10 3 SPP80N03S2L-04

pF Ciss

10 2
Coss
IF
C

10 3

Crss 10 1
Tj = 25 °C typ
Tj = 175 °C typ
Tj = 25 °C (98%)
Tj = 175 °C (98%)

10 2 10 0
0 5 10 15 20 V 30 0 0.4 0.8 1.2 1.6 2 2.4 V 3
VDS VSD

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13 Typ. avalanche energy 14 Typ. gate charge

EAS = f (Tj) VGS = f (QGate )
par.: ID = 80 A , VDD = 25 V, RGS = 25 Ω parameter: ID = 80 A pulsed
SPP80N03S2L-04
400 16

mJ V

300 12
E AS

VGS
250 10
0,2 VDS max
0,8 VDS max
200 8

150 6

100 4

50 2

0 0
25 45 65 85 105 125 145 °C 185 0 20 40 60 80 nC 120
Tj Q Gate

15 Drain-source breakdown voltage

V(BR)DSS = f (Tj)
parameter: ID=10 mA
SPP80N03S2L-04
36

V
V(BR)DSS

34

33

32

31

30

29

28

27
-60 -20 20 60 100 140 °C 200
Tj

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Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.

Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

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Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
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or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.

Further information
Please notice that the part number is BSPP80N03S2L-04, BSPB80N03S2L-04 and BSPI80N03S2L-04, for
simplicity the device is referred to by the term SPP80N03S2L-04, SPB80N03S2L-04 and SPI80N03S2L-04
throughout this documentation

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