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Name : ...,.".........
tnstruction : Answer att the I short answers. Answer 4 essays, one from
each Module.
PAFIT _ A
PART_ B
Z. a) State and illustrate the Law of Diminishing Marginal Utility with its assumptions
and limitations. 15
OR
b) What are the factors o{ production ? Explain characteristics of factors of
production..
OR
b) Explain elasticity of demand, its different types and cases. What are the methods
of measuring elasticitY ?
P.T.O,
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M 20893
4. a) How a central bank is different frorn a commercial bank ? What are the functions
of a central bank ? What are the methods of credit control ? 15
OR
bi Discuss about various {orms of business organisations.
OR
b) What are the national income concepts ? Methods of calculating national
income
15
and its difficulties.
(4x15=60)
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Reg. No. :
Name :
h) Explain the pedormance degradation induced by laser phase and intensity noise. 15
V" a) Explain the principle of operation ol
i) Flaman Amplifier
ii) Brillouin Amplifier. 15
OR
b) i) Briefly explain the saturation induced cross talk.
ii) Explain in detail abouttransimpedance amplifier. 15
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M 20895
Heg" No. :
Name :
PART _ A
5. Describe the n tub and p tub implant of a tw[n tub CMOS structure.
PAHT* B
10. What isthe difference between proxirnityprinting and projection printing ? Compare
their features. Is
P.T.O.
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11. Explain the Lscos and sllo prccess vvith neat sketches" 15
CR
12. a) With diagram, explain how trench isolation can he used to irnprove packing
density in CMOS circuits. T
b) Explain the formatian of ohmic c*ntact {starting with} g
i) p* contact $R p-semiconductor otr n+ crlntaet on n-semiconductor.
ii) p* contact on an n-semi*ondLletsr CIr n+ ccntact on p-$effliconductor.
13" Describe in detailthe CMSS fabrication proaess $equsnce with neat sketches. Is
OH
14. Explain in detailthe hot carrier effeets in BJT and CMOS with neat sketches" x5
1r
t3- Explain in detail about the layout t:f junetir:n isolated tsJT.
15
OR
16. Explain the layouts of 2 rnput f{OFq anel2 input NAhiD gate with neat sketches. 15
Ililil|ililllllrlilfirffi fiffi ltfilfit M 20896
Reg. No. :
Name : ..."........
3. With block diagram, explain the details of the TSI modules of a No. 5 ESS AT and T
switching system.
5. Define Call Completion Flate (CCH). How the parameter helps in the dimensioning
and designing of a network ?
7. Explain the common channel signalling scheme. List its advantages and
disadvantages.
9. Draw the block diagram of a three stage network and calculate the total number of
switching elements and derive the probability of blocking.
OR
10. With block diagram, explain the working of time multiplexed time switch. 15
P.T.O.
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M 20896 I
11 . Derive the equations lor calculating the blocking probabitity ol a three-stage network
using Lee's aPProximation.
OR
15
12. With block diagram, explain the working of DMS-100 switching system.
1g, Derive the equations of incoming traffic and service time characterisatiot"t using
Poisson process analYsis.
oa
15
14. Derive Erlang's blocking formula for an LCC system with infinite sources'
16. Describe the working of strict sense non-block switch and with diagram, explain
15
self routing switches.
(4x15=60)
1lilffiililltilfiilfirilrffililililr M 20898
Reg. No. : ...............
Name : .............".
2" Model an image processing system and describe each and every individual parts.
7" Write block diagram, explain an inverse filter used for image restoration.
A=it-r 1l l- r
I and B=l
21
11 -11 L3
i
4)
Find ABB and BAA" 10
b) Define Toeplitz and circulant matrix. 5
P"T.O.
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a) Delta modulator
b) Differential PCM coder. 15
14. Describe the following lossless cCImpression techniques used in digital image
compression. 15
a) Hun length coding
b) Huffman coding.
15. Define and explain Walsh-Hadamard transform. List its properties. Write Hn for
n=1,2and3. 15
OR
16. Explain the transform operation in frequency domain with different steps involved
in it. With block diagram explain in detail. 15
(4x15=60)