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NOTE: When ordering, use the entire part number. Add the suffix 9A to G
obtain the TO-252AA variant in the tape and reel, i.e., RFD16N05SM9A.
Packaging
JEDEC TO-251AA JEDEC TO-252AA
NOTE:
1. TJ = 25oC to 150oC.
Thermal Resistance Junction to Ambient RJA TO-251 and TO-252 - - 100 oC/W
Diode Reverse Recovery Time trr ISD = 16A, dISD/dt = 100A/s - - 125 ns
NOTES:
2. Pulse test: pulse width 250s, duty cycle 2%.
3. Repetitive rating: pulse width limited by maximum junction temperature. See Transient Thermal Impedance curve (Figure 3) and Peak Current
Capability Curve (Figure 5).
1.2 20
POWER DISSIPATION MULTIPLIER
1.0
16
0.6
8
0.4
4
0.2
0 0
0 25 50 75 100 125 150 175 25 50 75 100 125 150 175
TC , CASE TEMPERATURE (oC) TC, CASE TEMPERATURE (oC)
FIGURE 1. NORMALIZED POWER DISSIPATION vs CASE FIGURE 2. MAXIMUM CONTINUOUS DRAIN CURRENT vs
TENPERATURE CASE TEMPERATURE
1
THERMAL IMPEDANCE
0.5
Z JC, NORMALIZED
0.2
PDM
0.1
0.1
0.05
t1
0.02 t2
0.01 NOTES:
SINGLE PULSE DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x Z JA x R JA + TA
0.01
10-5 10-4 10-3 10-2 10-1 100 101
t, RECTANGULAR PULSE DURATION (s)
SINGLE PULSE
TJ = MAX RATED FOR TEMPERATURES
100 TC = 25oC 200 VGS = 20V ABOVE 25oC DERATE PEAK
CURRENT AS FOLLOWS:
ID, DRAIN CURRENT (A)
TC = 25oC
10
1ms
OPERATION IN THIS
AREA MAY BE
LIMITED BY rDS(ON) 10ms TRANSCONDUCTANCE
100ms MAY LIMIT CURRENT
IN THIS REGION
VDSS(MAX) = 50V DC
1
1 10 100 10
VDS, DRAIN TO SOURCE VOLTAGE (V) 10-5 10-4 10-3 10-2 10-1 100 101
t, PULSE WIDTH (s)
FIGURE 4. FORWARD BIAS SAFE OPERATING AREA FIGURE 5. PEAK CURRENT CAPABILITY
100 50
VGS = 20V VGS = 10V VGS = 8V
VGS = 7V
IAS, AVALANCHE CURRENT (A)
40
STARTING TJ = 150oC 20
If R = 0
tAV = (L)(IAS)/(1.3*RATED BVDSS - VDD) 10 VGS = 5V
If R 0
tAV = (L/R)ln[(IAS*R)/(1.3*RATED BVDSS-VDD) +1] VGS = 4.5V
1 0
0.01 0.1 1 10 0 1 2 3 4
tAV, TIME IN AVALANCHE (ms) VDS, DRAIN TO SOURCE VOLTAGE (V)
50 2.5
IDS(ON), DRAIN TO SOURCE CURRENT (A)
30 1.5
20 1.0
10 0.5
0 0
0 2 4 6 8 10 -80 -40 0 40 80 120 160 200
VGS, GATE TO SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (oC)
2.0 2.0
VGS = VDS, ID = 250A ID = 250A
NORMALIZED DRAIN TO SOURCE
BREAKDOWN VOLTAGE
1.5 1.5
THRESHOLD VOLTAGE
NORMALIZED GATE
1.0 1.0
0.5 0.5
0 0
-80 -40 0 40 80 120 160 200 -80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC) TJ , JUNCTION TEMPERATURE (oC)
FIGURE 10. NORMALIZED GATE THRESHOLD VOLTAGE vs FIGURE 11. NORMALIZED DRAIN TO SOURCE BREAKDOWN
JUNCTION TEMPERATURE VOLTAGE vs JUNCTION TEMPERATURE
1600 50 10
CISS
25 5
800
0.75 BVDSS
0.50 BVDSS
COSS 0.25 BVDSS
12.5 2.5
400 RL = 3.125
IG(REF) = 0.8mA
CRSS
VGS = 10V
0 0
0 I I
G ( REF ) G ( REF )
0 5 10 15 20 25 20 ------------------------- t, TIME (ms) 80 ----------------------
I I
VDS, DRAIN TO SOURCE VOLTAGE (V) G ( ACT ) G ( ACT )
VDS
BVDSS
L tP
VDS
tP
0V IAS
0
0.01
tAV
FIGURE 14. UNCLAMPED ENERGY TEST CIRCUIT FIGURE 15. UNCLAMPED ENERGY WAVEFORMS
tON tOFF
td(ON) td(OFF)
VDS
tr tf
VDS
90% 90%
RL
VGS
+ 10% 10%
VDD 0
-
DUT 90%
RGS
VGS 50% 50%
PULSE WIDTH
VGS 10%
0
FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. RESISTIVE SWITCHING WAVEFORMS
VDS
RL VDD Qg(TOT)
VDS
VGS = 20V
VGS Qg(10)
+
VDD
VGS VGS = 10V
-
DUT VGS = 2V
IG(REF) 0
Qg(TH)
IG(REF)
0
FIGURE 18. GATE CHARGE TEST CIRCUIT FIGURE 19. GATE CHARGE WAVEFORM
S1A S2A
RBREAK 17 18 RBKMOD 1 12
13 14 15 RBREAK
RDRAIN 50 16 RDSMOD 0.4e-3 17 18
8 13
RGATE 9 20 3.0
RIN 6 8 1e9 S1B S2B RVTO
RSCL1 5 51 RSCLMOD 1e-6 13
CB 19
CA IT
RSCL2 5 50 1e3 + 14
+
RSOURCE 8 7 RDSMOD 21.5e-3 6 5 VBAT
EGS 8 EDS 8 +
RVTO 18 19 RVTOMOD 1 -
-
S1A 6 12 13 8 S1AMOD
S1B 13 12 13 8 S1BMOD
S2A 6 15 14 13 S2AMOD
S2B 13 15 14 13 S2BMOD
VBAT 8 19 DC 1
VTO 21 6 0.82
.MODEL DBDMOD D (IS = 2.5e-13 RS = 7.1e-3 TRS1 = 3.04e-3 TRS2 = -10e-6 CJO = 1.12e-9 TT = 5.6e-8)
.MODEL DBKMOD D (RS = 2.51e-1 TRS1 = -6.57e-4 TRS2 = 1.66e-6)
.MODEL DPLCAPMOD D (CJO = 6.1e-10 IS = 1e-30 N = 10)
.MODEL MOSMOD NMOS (VTO = 3.96 KP = 16.68 IS = 1e-30 N = 10 TOX = 1 L = 1u W = 1u)
.MODEL RBKMOD RES (TC1 = 1.07e-3 TC2 = -7.19e-7)
.MODEL RDSMOD RES (TC1 = 5.45e-3 TC2 = 1.66e-5)
.MODEL RSCLMOD RES (TC1 = 1.25e-3 TC2 = 17e-6)
.MODEL RVTOMOD RES (TC1 = -5.15e-3 TC2 = -4.83e-6)
.MODEL S1AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -5.25 VOFF= -3.25)
.MODEL S1BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = -3.25 VOFF= -5.25)
.MODEL S2AMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 0.56 VOFF= 5.56)
.MODEL S2BMOD VSWITCH (RON = 1e-5 ROFF = 0.1 VON = 5.56 VOFF= 0.56)
.ENDS
NOTE: For further discussion of the PSPICE model, consult A New PSPICE Sub-Circuit for the Power MOSFET Featuring Global
Temperature Options; written by William J. Hepp and C. Frank Wheatley.
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY
PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY
ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT
CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or 2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Advance Information Formative or This datasheet contains the design specifications for
In Design product development. Specifications may change in
any manner without notice.
No Identification Needed Full Production This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Rev. I5