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The RF Line
The BFR96 transistor uses the same stateoftheart microwave transistor
chip which features fineline geometry, ionimplanted arsenic emitters and gold
top metallization. This transistor is intended for lowtomedium power amplifiers
requiring high gain, low noise figure, and low intermodulation distortion. The
BFR96 is particularly suitable for broadband MATV/CATV amplifiers.
fT = 4.5 GHz @ 50 mA
HIGHFREQUENCY
TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating Symbol Value Unit
CollectorEmitter Voltage VCEO 15 Vdc
CollectorBase Voltage VCBO 20 Vdc
EmitterBase Voltage VEBO 3.0 Vdc
Collector Current Continuous IC 100 mAdc
Total Device Dissipation @ TC = 100C (1) PD 0.5 Watts
Derate above TC = 100C 10 mW/C
Storage Temperature Tstg 65 to +150 C CASE 317A01, STYLE 2
OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage V(BR)CEO 15 Vdc
(IC = 1.0 mAdc, IB = 0)
CollectorBase Breakdown Voltage V(BR)CBO 20 Vdc
(IC = 100 Adc, IE = 0)
EmitterBase Breakdown Voltage V(BR)EBO 3.0 Vdc
(IE = 100 Adc, IC = 0)
Collector Cutoff Current ICBO 100 nAdc
(VCB = 10 Vdc, IE = 0)
ON CHARACTERISTICS
DC Current Gain hFE 30 200
(IC = 50 mAdc, VCE = 10 Vdc)
DYNAMIC CHARACTERISTICS
CurrentGain Bandwidth Product fT 4.5 GHz
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
CollectorBase Capacitance Ccb 1.2 1.5 pF
(VCB = 10 Vdc, Emitter Guarded)
NOTE: (continued)
1. Case temperature measured on collector lead immediately adjacent to body of package.
FUNCTIONAL TESTS
Noise Figure NF 2.0 dB
(IC = 10 mAdc, VCE = 10 Vdc, f = 0.5 GHz)
Maximum Unilateral Gain/Insertion Gain (2) GU(max)/ /12 14.5/13 dB
(IC = 50 mAdc, VCE = 10 Vdc, f = 0.5 GHz) |S21|2
|S21|2
NOTE: 2. GU(max) =
(I |S11|2)(I |S22|2)
28 28
G U (max), MAXIMUM UNILATERAL GAIN (dB)
24 VCE = 10 V 24 VCE = 10 V
16 16
12 12
8 8
4 4
0 0
0.2 0.3 0.5 0.7 1 1.5 0.2 0.3 0.5 0.7 1 1.5
f, FREQUENCY (GHz) f, FREQUENCY (GHz)
22 6
G U (max), MAXIMUM UNILATERAL GAIN (dB)
4
10 V
18
3
14
12 2
0 20 40 60 80 0 20 40 60 80 100
IC, COLLECTOR CURRENT (mA) IC, COLLECTOR CURRENT (mA)
f = 0.5 GHz
VCE = 10 V
VCE = 10 V
3 3
IC = 50 mA
2 2
10 mA
1 1
0.1 0.2 0.3 0.5 1 0 20 40 60 80
f, FREQUENCY (GHz) IC, COLLECTOR CURRENT (mA)
4
Ccb, COLLECTOR-BASE CAPACITANCE (pF)
0
0 2 4 6 8 10 12 14
VCB, COLLECTORBASE VOLTAGE (Vdc)
150 30
j150
j25 j100
120 60
j50 90
NOTES:
1. DIMENSION D NOT APPLICABLE IN ZONE N.
L
MILLIMETERS INCHES
D DIM MIN MAX MIN MAX
1 A 4.44 5.21 0.175 0.205
C 1.90 2.54 0.075 0.100
A 2
D 0.84 0.99 0.033 0.039
3
F 0.20 0.30 0.008 0.012
G 0.76 1.14 0.030 0.045
K K 7.24 8.13 0.285 0.320
N 3 PL L 10.54 11.43 0.415 0.450
N 1.65 0.065
F G
STYLE 2:
PIN 1. COLLECTOR
2. EMITTER
3. BASE
C
CASE 317A01
ISSUE B
*BFR96/D*
BFR96 MOTOROLA RF DEVICEBFR96/D
DATA
6