Skema test 1

Q1 (a) Explain and define the classification of Electronics with regard to the power electronics
and information electronics. Then, show the relation of power electronics with multiple
disciplines by using appropriate block diagrams.
(3 marks)
Answers:

Information electronics: to process information

Electronics
Power electronics: to process electric power
Power electronics is the application of electronic devices to the control and conversion of
electric power.
[1M]
Systems& Signal
Circuit Ct Control theory processing
theory
Control Simulation &
computing
Electric theory Power
machines electronics electronics

electr oni
Power Solid state
systems cs physics
Electromagnetics
electr
[2M]

(Note: Any answers which is close enough is acceptable)

(b) Select and explain one applications of power electronics. Appropriate diagram and
mathematical equation might be required to support your answers.
(5 marks)

Answers:
Laptop adapter TNB provides AC source of 240 V, 50Hz, but usually laptop needs DC
supply of 19 V, ~100 W. Thus the AC source must be converted to DC supply. Here, a
transformer is required to stepdown the AC voltage. Then AC-DC converter with filter is
required to rectified the AC source. After that, a voltage regulator is required to fix the
converted DC supply. Finally the laptop can be power-up with the processed AC source
becomes DC supply. (other applications may also applicable)
[2M]

5
 [3M]

(c) A MOSFET (SiHG25N40D) has the main specifications as shown in Table I.

(12 marks)

PARAMETER SYMBOL LIMIT UNIT

Drain-Source Voltage VDS 400 V
Continuous Drain Current (TC = 25 C) IDS 25 A
Drain-Source On-State Resistance RDS(on) 0.14
Rise Time tr 57 ns
Fall Time tf 37 ns

(i) Determine the maximum switching frequency if the minimum allowable switching
period is 100 times of the fall time.
(1 marks)

1 1
fsw 270.27kHz
Tsw 100 37ns [1M]

(ii) If the MOSFET is operated at the rated condition, sketch and label the drain-source
voltage (VDS) and drain-source current (IDS) waveforms with rise time (tr), fall time (tf)
and influence of drain-source on-state resistance (RDS(on)) for a single MOSFET.
(5 marks)

[5M]

6
 (iii) Analyze the parameters given in order to get total semiconductor losses,
i.e., switching loss and conduction loss.

(6 marks)

Vmax I max 400 25

Won t on 57 10 9 95 uJ [1M]
6 6

Vmax I max 400 25

Woff t off 37 10 9 61 uJ [1M]
6 6

Won Woff 95uJ 61uJ

PSW 42 W [2M]
Ts 3700ns
PCOND I DS RDS (on) 25 2 0.14 87.5 W
2
[2M]

Q2(a)

[4 marks]

7
Q2(b)(i)

- average output voltage formula

T /2
1
V0 Vm sin t dt
T 0

1
V0 2 Vm sin t dt
2 0

V0 m cos t
V

V0
Vm
1 cos

[2 marks]

- average voltage at the load for varies load current.

I 0 5 A V0 I 0 R 5 20 100 V
I 0 10 A V0 I 0 R 10 20 200 V
[2 marks]

Q2(b)(ii)

- range of delay angle for varies load current.

For V0 = 200 V, assume = 0o.

[1 mark]
- range of delay angle for varies load current.

For Vm = 314.16 V and V0 = 100 V,

200
Vm 314.16V
2
V
cos 1 0 1
Vm
100
cos 1 1
314.16
90 0
[2 marks]
Therefore the range of angle is 0 - 90
0 0

8
 1 sin 2
Q2 (b)(iii) Prove, Vrms Vm .
2 2 4
1/ 2
1 T /2
Vm sin t dt
2
Vrms
T 0
1/ 2
1
2 Vm sin t dt
2
Vrms
2 0
1/ 2
V 2 t sin 2t
Vrms m

2 4

1/ 2
V 2 sin 2 sin 2
Vrms m 2 4 2 4

1/ 2
V 2 sin 2
Vrms m 2 2 4

1/ 2
1 sin 2
Vrms Vm2
2 2 4
1/ 2
1 sin 2
Vrms Vm
2 2 4
[2 marks]

- power absorbed by the load for varies load current.

For = 00,
1/ 2
1 0 0 sin 0 0
Vrms 240 2 240 V
2 2 4

2
Vrms 240 2
P 2880 Watt
R 20
[2 marks]

9
For = 900,
1/ 2
1 90 0 sin 180 0
Vrms 240 2
2 2 4
1/ 2
1
240 2 0.25 0
2
169.70V

2
Vrms 169.7 2
P 1439.9 Watt
R 20
[2 marks]

Q2(b)(iv)

S = Irms Vrms = 12 240 = 2880 VA [1 mark]

Q(b)(v)

For = 00,
Power factor = P/S = 2880 / 2880 = 1
[1 mark]
For = 90 , 0

Power factor = P/S = 1439.9 / 2880 = 0.5

[1 mark]

10