DMG9933USD

DUAL P-CHANNEL ENHANCEMENT MODE MOSFET

Features Mechanical Data

Low On-Resistance Case: SO-8
Low Input Capacitance Case Material: Molded Plastic, Green Molding Compound.
Fast Switching Speed UL Flammability Classification Rating 94V-0
Low Input/Output Leakage Moisture Sensitivity: Level 1 per J-STD-020
Lead Free By Design/RoHS Compliant (Note 1) Terminal Connections: See Diagram Below

NEW PRODUCT

"Green" Device (Note 2) Marking Information: See Page 4

Qualified to AEC-Q101 Standards for High Reliability Ordering Information: See Page 4
Weight: 0.072 grams (approximate)

SO-8

D1 D2
S1 D1

G1 D1
G1 G2
S2 D2

G2 D2

S1 S2
Top View Top View
Internal Schematic P-Channel MOSFET P-Channel MOSFET

Maximum Ratings @TA = 25C unless otherwise specified

Characteristic Symbol Value Unit

Drain-Source Voltage VDSS -20 V
Gate-Source Voltage VGSS 12 V
Steady TA = 25C -4.6
Continuous Drain Current (Note 3) VGS = -4.5V ID A
State TA = 85C -3
Pulsed Drain Current (Note 4) IDM -20 A

Thermal Characteristics
Characteristic Symbol Value Unit
Power Dissipation (Note 3) PD 1.15 W
Thermal Resistance, Junction to Ambient @TA = 25C RJA 109 C/W
Operating and Storage Temperature Range TJ, TSTG -55 to +150 C
Notes: 1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB, with minimum recommended pad layout.
4. Repetitive rating, pulse width limited by junction temperature.

DMG9933USD 1 of 6 June 2010

Document number: DS32085 Rev. 2 - 2 www.diodes.com Diodes Incorporated
 DMG9933USD

Electrical Characteristics @TA = 25C unless otherwise specified

Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage BVDSS -20 - - V VGS = 0V, ID = -250A
NEW PRODUCT

Zero Gate Voltage Drain Current TJ = 25C IDSS - - -1.0 A VDS = -16V, VGS = 0V
Gate-Source Leakage IGSS - - 100 nA VGS = 12V, VDS = 0V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage VGS(th) -0.45 - -1.1 V VDS = VGS, ID = -250A
- 55 75 VGS = -4.5V, ID = -4.8A
Static Drain-Source On-Resistance RDS (ON) m
- 76 110 VGS = -2.5V, ID = -1A
Forward Transfer Admittance |Yfs| - 10 - S VDS = -9V, ID = -3.4A
Diode Forward Voltage VSD - -0.8 -1.2 V VGS = 0V, IS = -2A
DYNAMIC CHARACTERISTICS (Note 6)
Input Capacitance Ciss - 608.4 - pF
VDS = -6V, VGS = 0V
Output Capacitance Coss - 81.5 - pF
f = 1.0MHz
Reverse Transfer Capacitance Crss - 72.4 - pF
Gate Resistance Rg - 44.91 - VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge Qg - 6.5 - nC
VDS = -10V, VGS = -4.5V,
Gate-Source Charge Qgs - 0.9 - nC
ID = -3.2A
Gate-Drain Charge Qgd - 1.5 - nC
Turn-On Delay Time tD(on) - 12.45 - ns
Turn-On Rise Time tr - 10.29 - ns VDS = -10V, VGS = -4.5V,
Turn-Off Delay Time tD(off) - 46.52 - ns RL = 10, RG = 1, ID = -1A
Turn-Off Fall Time tf - 22.19 - ns
Notes: 5. Short duration pulse test used to minimize self-heating effect.
6. Guaranteed by design. Not subject to production testing.

10 VGS = -4.5V 10
VGS = -8.0V
VGS = -3.0V
VGS = -2.5V
8 VDS = -5V
8
VGS = -2.0V
-ID, DRAIN CURRENT (A)
-ID, DRAIN CURRENT (A)

6 6

4 4

TA = 150C
VGS = -1.5V
2 2 T A = 125C
TA = 85C
T A = 25C

VGS = -1.2V TA = -55C

0 0
0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 2.5 3
-VDS, DRAIN-SOURCE VOLTAGE (V) -VGS, GATE SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics

DMG9933USD 2 of 6 June 2010

Document number: DS32085 Rev. 2 - 2 www.diodes.com Diodes Incorporated
 DMG9933USD

RDS(ON), DRAIN-SOURCE ON-RESISTANCE () 0.25 0.16

RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

VGS = 4.5V

0.20
0.12

0.15 TA = 150C
NEW PRODUCT

0.08 TA = 125C
T A = 85C
0.10 -VGS = 1.8V
TA = 25C
-VGS = 2.5V
0.04 T A = -55C
0.05 -VGS = 4.5V

0 0
0.1 1 10 0 2 4 6 8 10
-ID, DRAIN-SOURCE CURRENT (A) -ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance Fig. 4 Typical Drain-Source On-Resistance
vs. Drain Current and Gate Voltage vs. Drain Current and Temperature

1.7 0.16

1.5 RDS(ON), DRAIN-SOURCE ON-RESISTANCE ()

ON-RESISTANCE (NORMALIZED)

0.12
RDS(ON), DRAIN-SOURCE

1.3

-VGS = 2.5V
-ID = 5.5A
1.1 0.08
-VGS = 5.0V
-ID = 10A
0.9
-VGS = 5.0V
0.04 -ID = 10A

-VGS = 2.5V
0.7
-ID = 5.0A

0.5 0
-50 -25 0 25 50 75 100 125 150 -50 -25 0 25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (C) TJ, JUNCTION TEMPERATURE (C)
Fig. 5 On-Resistance Variation with Temperature Fig. 6 On-Resistance Variation with Temperature

1.6 10
VGS(TH), GATE THRESHOLD VOLTAGE (V)

8
-IS, SOURCE CURRENT (A)

1.2

6 TA = 25C

0.8 -ID = 1mA

4
-ID = 250A

0.4
2

0 0
-50 -25 0 25 50 75 100 125 150 0.2 0.4 0.6 0.8 1.0 1.2
TA, AMBIENT TEMPERATURE (C) -VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature Fig. 8 Diode Forward Voltage vs. Current

DMG9933USD 3 of 6 June 2010

Document number: DS32085 Rev. 2 - 2 www.diodes.com Diodes Incorporated
 DMG9933USD

-IDSS, DRAIN-SOURCE LEAKAGE CURRENT (nA)

1,000 10,000
f = 1MHz

Ciss T A = 150C

1,000
C, CAPACITANCE (pF)

TA = 125C
NEW PRODUCT

100 Coss 100

Crss TA = 85C

10

TA = 25C

10 1
0 4 8 12 16 20 0 4 8 12 16 20
-VDS, DRAIN-SOURCE VOLTAGE (V) -VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Typical Total Capacitance Fig. 10 Typical Drain-Source Leakage Current
vs. Drain-Source Voltage

1
D = 0.7
r(t), TRANSIENT THERMAL RESISTANCE

D = 0.5

D = 0.3

0.1
D = 0.1

D = 0.9
D = 0.05
RJA(t) = r(t) * RJA
RJA = 156C/W
D = 0.02

0.01
D = 0.01 P(pk)
t1

t2
D = 0.005
T J - T A = P * R JA(t)
D = Single Pulse Duty Cycle, D = t1/t2

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response

Ordering Information (Note 7)

Part Number Case Packaging

DMG9933USD-13 SO-8 2500 / Tape & Reel
Notes: 7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

Marking Information
Top View
8 5

Logo
G9933UD Part no.
YY WW

Xth week: 01 ~ 53
Year: 09 = 2009
1 4

DMG9933USD 4 of 6 June 2010

Document number: DS32085 Rev. 2 - 2 www.diodes.com Diodes Incorporated
 DMG9933USD

Package Outline Dimensions

SO-8
NEW PRODUCT

Dim Min Max

A - 1.75

0.254
E1 E A1 0.10 0.20
Gauge Plane A2 1.30 1.50
A1 Seating Plane
L A3 0.15 0.25
b 0.3 0.5
Detail A D 4.85 4.95
E 5.90 6.10
h 7~9 E1 3.85 3.95
45 e 1.27 Typ
Detail A h - 0.35
A2 A A3
L 0.62 0.82
b
0 8
e
All Dimensions in mm
D

Suggested Pad Layout

Dimensions Value (in mm)

X 0.60
C1 Y 1.55
C1 5.4
C2 C2 1.27

DMG9933USD 5 of 6 June 2010

Document number: DS32085 Rev. 2 - 2 www.diodes.com Diodes Incorporated
 DMG9933USD

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
NEW PRODUCT

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

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written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

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Copyright 2010, Diodes Incorporated

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DMG9933USD 6 of 6 June 2010

Document number: DS32085 Rev. 2 - 2 www.diodes.com Diodes Incorporated