PAPER-III

ELECTRONIC SCIENCE
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D 88 1 3 (In words)

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D-88-13 1 P.T.O.
 UGC NET/JRF
DEC-2013
ELECTRONIC SCIENCE
Paper III

Note : This paper contains seventy five (75) objective type questions of two (2) marks each.
All questions are compulsory.
1. In an npn transistor, the expression
4. The value of magnetic field density is
for avalanche multiplication factor is

given by given by expression H = 28 sin x a^y.
1 The value for current density is given
(A) M = by :
(1 + VCB/B VCBO)n
(A) 28 cos x a^z (B) 28 sine x a^y
(B) M = (1 + VCB/B VCBO)n
(C) 28 cos x a^y (D) 28 cos x a^x
(C) M = (1 VCB/B VCBO)n
1 5. A square coil has the dimensions
(D) M = 0.2 m 0.2 m and carrying a current
[1 (VCB/B VCBO)n]
of 3.0 A in a field of 10 wb/m2. The
Where, VCB is collector to base value of Torque is given by
voltage and BVCBO is maximum (A) 10.2 N m (B) 1.02 N m
reverse biasing voltage which may be (C) 0.12 N m (D) 1.2 N m
applied before breakdown between
the collector and base terminals. 6. For a transmission line which is
terminated in a normalised
impedance Zn, VSWR = 2, the value
2. In a bipolar transistor, stability factor
for a fixed bias circuit is given by of normalised impedance is given by
(A) 2 (B) 1/2
1 1
(A) S = (B) S= (C) 3 (D) 1/3
1+ 1
(C) S = ( 1)2 (D) S = + 1 7. A displacement transducer with a
shaft stroke of 3.0 cm, is applied to
as shown in figure. The total
3. In a Wein bridge oscillator circuit, resistance of the potentiometer is 5 k
the value of frequency can be
. The input voltage is 5 V, when
calculated by the following
the wiper is at 0.9 cm. The value of
expression :
the output voltage is given by
1
(A) fo =
2 RC
1
(B) fo =
2 LC
1
(C) fo =
2 L1(C1 + C2)
1
(D) fo =
2 (R21 + R22) (C21 + C22) (A) 1.5 V
(C) 0.15 V
(B) 15 V
(D) 5 V
Paper-III 1 D-88-13
8. The figure shown below, is symbol of 14. The term (1/jw) on the log-
magnitude plot has a slope of
(A) 20 dB/decade
(B) + 20 dB/decade
(C) 40 dB/decade
(D) + 40 dB/decade
15. The Routh Array is as below :
S6 1 8 20 6
(A) P channel depletion MOSFET S 5 2 12 16
(B) P-channel enhancement MOSFET S 4 2 12 16
(C) Complementary MOSFET S 3 0 0
(D) P-channel JFET The row of zero of this ray will be
replaced by coefficients of :
9. Which of the following circuit comes (A) S4 + 12 S2 + 16
under the class of sequential logic (B) S3 + 3 S
circuits ? (C) S4 + 6 S2 + 8
(A) Multiplexer (B) RS Latch (D) S3 + 12 S
(C) Full Adder (D) ROM
16. Zener breakdown mechanism occurs
10. The Hamming code for 0110 using in reverse biased PN junction
even parity is (A) when P and N regions are
(A) 0010110 (B) 1010110 lightly doped.
(B) when P and N regions are
(C) 1100110 (D) 1110110
heavily doped.
(C) are of silicon material only.
11. Phase Lock Loop (PLL) system is (D) when P and N regions are
used for the detection of equally doped.
(A) PM (B) AM
(C) FM (D) QAM 17. The operation of a Photo-diode
involves
12. A transistor amplifier has a measured (A) Photo-conductive effect
S/N of 10 at its input and 5 at its (B) Photo-voltaic effect
output. The transistors Noise Figure (C) Photo-emissive effect
(NF) in dB is (D) Photo-multiplicative effect
(A) 2 dB (B) 3 dB 18. A UJT has RBB = 10 K and
(C) 6 dB (D) 10 dB RB2 = 4 K. Its intrinsic stand-off ratio
is
13. A signal varies from 20 Hz to 5 KHz
(A) 0.6 (B) 0.4
is passed using pulse modulation
(C) 2.4 (D) 3.5
scheme. Minimum sampling rate and
number of channels that could be 19. The triggered voltage of a SCR is
accommodated using TDM (assume close to
each sample takes 10 s) (A) 0.3 V
respectively will be (B) 0.7 V
(A) 5 KHz, 5 (B) 10 KHz, 5 (C) 3 V
(C) 5 KHz, 10 (D) 10 KHz, 10 (D) breakdown voltage
D-88-13 2 Paper-III
20. A thyristor can be used as 25. 8255A Programmable Peripheral
(A) an amplifier Interface IC has got the 24 I/O lines
(B) a resistor in the following way (General form) :
(C) a switch (A) Port A with 8 input lines, Port
(D) a power source B with 8 output lines, Port C
(upper nibble) with 4 input
21. Which of the following is an lines and Port C (lower nibble)
advantage to use fiber optic data with 4 output lines.
transmission ?
(A) Resistance to the data theft (B) Port A with 8 input/out lines,
(B) Fast data transmission rate Port B with 8 input lines and
Port C with 8 output lines.
(C) Low noise level
(D) All of the above (C) Port A with 8 input lines, Port
B with 8 output lines and Port
22. A breakdown which is caused by C with 8 bits as either input or
cumulative multiplication of carriers output lines.
through field induced impact (D) Port A with 8 lines as
ionization occurs in input/output lines, Port B with
(A) Avalanche diode 8 lines as input/output lines,
(B) Tunnel diode Port C (lower nibble) with 4
(C) Varactor diode lines as input/output lines. Port
(D) Gunn diode C (upper nibble) with 4 lines as
input/output lines.
23. Transfer function of a system is
necessary for the calculation of
(A) the time constant 26. C program is as follows : The result
(B) the output for a given input of the program is
(C) the steady state gain int i; /*declare integer i*/
(D) the order of the system
i=10; /*set i to 10 */
24. If one or more pairs of simple roots i=i+A; /*add character A*/
are located on imaginary axis of the
/*to integer i*/
s-plane but there are no roots in the
right half of s-plane, the response due print f (i=%d, i);
to initial condition will (A) 55 (B) 51
(A) decrease to zero as time
approaches infinity. (C) 71 (D) 75
(B) increase as time approaches
infinity.
27. Consider the following conditional
(C) be undamped sinusoidal
expression
oscillations.
(D) be damped unsinusoidal z = (x > y) ? x : y;
oscillation and the damping if x = 2 and y = 8, the value of z is
factor will depend upon the
relative location of the roots on (A) 2 (B) 8
the imaginary axis. (C) 6 (D) 10
Paper-III 3 D-88-13
28. int Net = 0; 32. In an OPAMP, following
if x < 50 characteristics are given :
if (y > 5) 1. PSRR (Power Supply
Net = x + y; Rejection Ratio) = 0
else 2. Thermal Drift is defined in
Net = x y; terms of Amperes/C.
For this C program segment, x = 55 3. Thermal drift is defined in
and y = 5, then the value Net is terms of V/C.
(A) 0 (B) 60 4. Slew rate is defined in terms of
(C) 50 (D) 55 V/s.
29. In 8253 programmable interval timer, Which one of the following is correct ?
in which modes, the counting is (A) 1 and 2 only
neither enabled nor disabled ? (B) 1 and 3 only
(A) 0 and 4 (B) 1 and 5 (C) 1, 3 and 4
(C) 1 and 4 (D) 3 and 5 (D) 1, 2 and 4

30. In which mode of 8259A 33. Consider the following statement :

programmable interrupt controller, (i) A flip-flop is used to store 1-bit
all the Interrupt Requests (IRs) are of information.
arranged from highest to lowest with (ii) Race-around condition occurs
IR0 as the highest and IR1 as the in J-K flip-flop when both the
lowest ? inputs are 1.
(A) Fully Nested Mode (iii) Master-slave configuration is
(B) Automatic Rotation Mode used in flip-flop to store 2-bits
(C) Specific Rotation Mode of information.
(D) Simple Rotation Mode (iv) A transparent latch consists of
D type flip-flop.
31. A transmission line has following Which of the following statements
characteristics : is/are true ?
Vf + Vr (A) (i) only
1. ZL = I + I (B) (i), (iii) and (iv)
f r
(C) (i), (ii) and (iv)
Vf Vr (D) (ii) and (iii) only
2. ZL = I I
f r
34. An AM demodulator can be
3. (propagation constant) = implemented with
(R + jL) (G + jC) (i) A linear multiplier followed by
a low pass filter.
4. propagation constant) =
(ii) A linear multiplier followed by
(R + jL) a high-pass filter.
(G + jC) (iii) A diode followed by low pass
Which of the following is correct filter.
option ? (iv) A linear multiplier followed by
(A) 1 and 4 is correct. band-stop filter.
(B) 2 and 3 is correct. The correct answer is :
(C) 1 and 3 is correct. (A) (i) only (B) (iii) only
(D) 2 and 4 is correct. (C) (i) and (iii) (D) (iv) only
D-88-13 4 Paper-III
35. In feedback control system, relative 39. Transfer function for a control
stability can be calculated using system is defined for where
(i) Routh-Hurwitz Array (i) linear system
(ii) Nyquist plot (ii) nonlinear system
(iii) Polar plot (iii) time invariant system
(iv) Root Locus Techniques (iv) time variant system
Correct answer is (A) (i) and (iii) (B) (ii) and (iv)
(A) All of the above (C) (i) and (iv) (D) (ii) and (iii)
(B) (i) and (ii) only
(C) (ii) and (iv) only 40. Tri state Buffers provide
(D) (ii), (iii) and (iv) (i) reduction of current
36. In comparison to LED, LASER has consumption in the circuit.
1. High emission frequency. (ii) isolation from input to output.
2. No tuning arrangement. (iii) high impedance during OFF state.
3. Wide spectral bandwidth. (iv) low impedance during ON state.
4. Provision for confinement. (A) (i) and (iv) (B) (ii) and (iv)
Of these statements : (C) (i) and (ii) (D) (i) and (iii)
(A) 1, 2 & 4 are correct.
(B) 1, 2, & 3 are correct. 41. Consider the following :
(C) 1 & 4 are correct. 1. CE stage 2. CC stage
(D) 2 & 3 are correct. 3. OP amp 4. CB stage
37. The turn-off time of an SCR can be The correct sequence of the input
reduced by impedance in increasing order is :
1. Quick withdrawal of the gate voltage. (A) 4, 1, 2, 3 (B) 1, 4, 2, 3
2. Reducing life-time by doping with gold. (C) 1, 2, 4, 3 (D) 4, 2, 1, 3
3. Applying a negative voltage pulse
to the gate. 42. The various components in super
Of these statements : heterodyne receiver is arranged as
(A) 1, 2 and 3 are correct. (i) AM Detector (ii) Mixer
(B) 1 and 2 are correct. (iii) RF Amplifier (iv) AF Amplifier
(C) 1 and 3 are correct.
(D) 2 and 3 are correct. The correct sequence is
(A) (iii), (ii), (i), (iv)
38. Consider the following statements (B) (i), (ii), (iv), (iii)
regarding a semiconductor : (C) (iii), (ii), (iv), (i)
1. Acceptor level lies close to the (D) (ii), (i), (iii), (iv)
valence band.
2. Donor level lies close to the
valence band. 43. For a unity feedback control system
3. n-type semiconductor behaves having an open-loop transfer
as a conductor at zero Kelvin. function
4. p-type semiconductor behaves K(S + 2)
as an insulator at zero Kelvin. G(S) = 2 4
S (S + 7 S + 12)
Of these statements :
The error constant Kp, Kv and Ka
(A) 2 and 3 are correct.
(B) 1 and 3 are correct. respectively are
(C) 1 and 4 are correct. (A) , , K/6 (B) 0, 0 , K/6
(D) 3 and 4 are correct (C) , 0 , K/6 (D) 0, , K/6
Paper-III 5 D-88-13
44. Arrange in ascending order the 49. The parameters associated with time
following logic families based on response of control system are
power delay products (i) Delay time (td)
(i) ECL (ii) TTL (iii) CMOS (ii) Settling time (ts)
Codes :
(A) (ii), (iii), (i) (B) (ii), (i), (iii) (iii) Rise time (tr)
(C) (i), (ii), (iii) (D) (iii), (ii), (i) (iv) Peak time (tp)
45. Consider the following four common Arrange the above in the order, the
type of transistors : parameter which is having minimum
1. Point Contact Transistor time to the parameter which has got
2. Bipolar Junction Transistor the maximum time.
3. MOS Field Effect Transistor (A) (i), (iv), (ii) and (iii)
4. Junction Field Effect Transistor (B) (i), (iii), (ii) and (iv)
Correct arrangement of these (C) (i), (iv), (iii) and (ii)
transistors in the increasing order of (D) (i), (iii), (iv) and (ii)
input impedance is
(A) 1, 2, 4, 3 (B) 1, 2, 3, 4 50. In the Assembly program, the
(C) 2, 1, 3, 4 (D) 2, 1, 4, 3 following steps are to be followed.
46. If the various logic families are Find the sequence in which the
arranged in the ascending order of program to be written for 8085
their fan-out capabilities, the microprocessor.
sequence will be (i) Initialization of variables.
(A) TTL, DTL, ECL, MOS (ii) Initialization of stack.
(B) DTL, TTL, MOS, ECL (iii) Enable or disable interrupts.
(C) MOS, DTL, TTL, ECL (iv) Program should be completed
(D) ECL, TTL, DTL, MOS with last line as END
statement.
47. Consider the following waves/rays :
(A) (i), (iii), (ii) and (iv)
1. UV Rays 2. X Rays
3. Visible light 4. UHF waves (B) (i), (ii), (iii) and (iv)
The correct sequence of the (C) (ii), (i), (iii) and (iv)
descending order in terms of (D) (ii), (iii), (i) and (iv)
frequency is :
(A) 3, 1, 2, 4 (B) 4, 3, 1, 2 51. Match the following lists :
(C) 2, 1, 3, 4 (D) 2, 4, 1, 3 List I List - II
(a) Alpha of Transistor (i) > 1
48. The structure of a decision table,
divided into four parts like (b) Beta of Transistor (ii)
1 4 (c) CMRR (Common (iii) < 1
2 3 Mode Rejection Ratio)
(i) Condition Stub (d) PSRR (Power Supply (iv) 0
(ii) Condition Entries Rejection Ratio)
(iii) Action Stub The correct match is :
(iv) Action Entries (a) (b) (c) (d)
(A) (i), (ii), (iv) and (iii) (A) (iii) (i) (ii) (iv)
(B) (ii), (iv), (iii) and (i) (B) (iv) (i) (ii) (iii)
(C) (i), (iii), (iv) and (ii) (C) (i) (ii) (iii) (iv)
(D) (i), (iv), (ii) and (iii) (D) (ii) (i) (iii) (iv)
D-88-13 6 Paper-III
52. Match the following lists : 55. Match the following lists :
List I List - II List I List - II
(a) Magnetron (i) Detector
(b) Pin diode (ii) Bunching (Characteristic of the (Device)
(c) Klystron (iii) Low Power device)
Oscillator (a) Voltage controlled (i) BJT
(d) Gunn diode (iv) -mode device
The correct match is :
(b) Current controlled (ii) UJT
(a) (b) (c) (d)
device
(A) (ii) (iii) (iv) (i)
(B) (i) (ii) (iii) (iv) (c) Conductivity (iii) FET
(C) (iii) (i) (ii) (iv) modulated device
(D) (iv) (i) (ii) (iii) (d) Negative (iv) IMPATT
conductance device
53. Match the following lists :
List I List - II Codes :
(a) Compand- (i) Improving (a) (b) (c) (d)
ing image rejection
(A) (ii) (iii) (i) (iv)
(b) Squelch (ii) Variation of
step rise in (B) (ii) (iii) (iv) (i)
quantisation (C) (iii) (i) (iv) (ii)
(c) Pre- (iii) Muting the
emphasis receiver (D) (iii) (i) (ii) (iv)
(d) Double (iv) Boosting of
conversion higher
56. Match the following lists :
modulating
frequencies at List I List - II
the transmitter (a) Optical fiber (i) FDM
Codes : communication
(a) (b) (c) (d)
(A) (ii) (iii) (iv) (i) (b) Mobile (ii) TDM
(B) (ii) (i) (iv) (iii) communication
(C) (i) (ii) (iii) (iv) (c) Digital (iii) CDMA
(D) (i) (ii) (iv) (iii) communication
(d) Analog (iv) Wavelength-
54. Match the following lists :
communication Division
List I List - II
Multiplexing
(a) 74150 (i) Quad 2 : 1 Multiplexer
(WDM)
(b) 74152 (ii) Dual 4 : 1 Multiplexer
(c) 74153 (iii) 8 : 1 Multiplexer Codes :
(d) 74157 (iv) 16 : 1 Multiplexer (a) (b) (c) (d)
Codes :
(a) (b) (c) (d) (A) (i) (iii) (ii) (iv)
(A) (i) (ii) (iii) (iv) (B) (iv) (iii) (ii) (i)
(B) (iv) (iii) (ii) (i)
(C) (ii) (iv) (i) (iii)
(C) (iv) (ii) (iii) (i)
(D) (ii) (i) (iv) (iii) (D) (iii) (i) (ii) (iii)
Paper-III 7 D-88-13
57. (a) Bodes-Plot (i) not a frequency 60. Match the following lists :
representation domain List I List - II
technique. a Stability of 1. Oscillation in
(b) Nyquist (ii) low frequency Control System which the
Diagram and high amplitude
frequency decreases
characteristics with time.
of the transfer b Unstability of 2. All roots of
function can be Control System characteristic
determined equation have
(c) Nichols (iii) decides the negative real
Charts Stability part.
criteria c Frequency 3. Steady state
(d) Root-locus (iv) also known as response response
Method Polar plots d Damped 4. Any root of
Codes : Oscillation characteristic
(a) (b) (c) (d) equation has a
(A) (iv) (iii) (i) (ii) positive real
(B) (iv) (iii) (ii) (i) part
(C) (iii) (iv) (i) (ii) Codes :
(D) (ii) (iii) (iv) (i) a b c d
(A) 4 2 3 1
58. The following are features of a micro (B) 2 4 3 1
controller 8051 : (C) 2 4 1 3
(i) 4 k bytes of ROM or EPROM (D) 4 2 1 3
(ii) 128 k bytes of data memory
(iii) Four programmable I/O ports
(iv) Three 16 bit timer/event Directions : Q. Nos. 61 to 70, the
counters. following items consist of two statements,
(A) (i), (ii) and (iii) one labelled the Assertion (A) and the
(B) (i), (ii) and (iv) other labelled the Reason (R). You are to
(C) (i), (iii) and (iv) examine these two statements carefully and
(D) (ii), (iii) and (iv) decide if the Assertion (A) and the Reason
59. Identify the peripheral devices for (R) are individually true and if so, whether
their applications. the Reason (R) is a correct explanation of
(a) 8155 (i) Serial Communication the Assertion (A). Select your answers to
(b) 8279 (ii) Timers and Counters these items using the codes given below
(c) 8253 (iii) Keyboard and display and mark your answer accordingly.
interface Codes :
(d) 8251 (iv) Additional input/output (A) Both (A) and (R) are correct
lines to processor and (R) is correct explanation
Codes : of (A).
(a) (b) (c) (d) (B) Both (A) and (R) are correct,
(A) (ii) (iii) (iv) (i) but (R) is not correct
(B) (iii) (iv) (i) (ii) explanation of (A).
(C) (iv) (i) (ii) (iii) (C) (A) is true, but (R) is false.
(D) (iv) (iii) (ii) (i) (D) (A) is false, but (R) is true.
D-88-13 8 Paper-III
61. Assertion (A) : In amplifiers, it is
easy to compare two powers on
a Logarithmic rather than on
linear scale. It is called decibel.
Reason (R) : Decibel is defined as
P2
N = 10 log P , where P2 is output
1 same direction with the
power and P is input power.
1
62. Assertion (A) : Magnetron are not
cross field devices.
Reason (R) : They make use of
electric and magnetic fields
simultaneously. The fields are
perpendicular to each other.
63. Assertion (A) : TDM can be
employed to transmit channels
having unequal bandwidths.
Reason (R) : If sampling theorem is
strictly followed, any analog
signal can be reconstructed
back from the samples.
64. Assertion (A) : A NAND gate is
called a Universal logic element.
Reason (R) : Any logic function can
be realized using NAND gates
alone.
65. Assertion (A) : The stability of a
control system can be
determined from the location of
roots of characteristic equation.
Reason (R) : For stability the roots
should lie on the left half of
s-plane.
66. Assertion (A) : The intrinsic Fermi
level of a semiconductor does
not lie exactly at the middle of
the energy band gap.
Reason (R) : The densities of the
available states in valence and
conduction bands of an
intrinsic semiconductor are
equal.
Paper-III
67. Assertion (A) : The operating
principle of Laser is based on
stimulated emission process.
Reason (R) : In coherent radiation,
the emitted photons have same
phase, same polarization and
incident photon.
68. Assertion (A) : A microprocessor
interfaced with inputs, outputs
and other peripheral devices is
also called a micro controller
system and is capable of
controlling the process.
Reason (R) : The microprocessor is
a device which processes the
instructions.
69. Assertion (A) : In control system
design, the transfer function
consists of both poles and
zeros. To make the system
stable, the poles plotted in
Bode plot should be near to
origin.
Reason (R) : The zeros must be also
near to origin.
70. Assertion (A) : A p-channel
enhancement MOSFET based
transistor can be turn on
prematurely.
Reason (R) : Most contaminants in
MOS fabrication are mobile
positively charged ions and
they get trapped between the
gate and the substrate in a n-
channel enhancement MOSFET,
whereas they are trapped on the
other side of the substrate in
the case of a p-channel
enhancement MOSFET.
9 D-88-13
Read the paragraph and answer the 71. The point above the drain voltage,
where there is no increase in drain
Question Nos. 71 to 75. current in a JFET is called as
(A) Break down point
(B) Pinch off point
The field effect transistor is a
(C) Knee point
semiconductor device which depends for (D) Critical point
its operation on the control of current by an
electric field. There are two types of field 72. FET is disadvantageous in
comparison with BJT because of
effect transistor, the Junction Field Effect
(A) High input impedance
Transistor (JFET) and Metal-Oxide-
(B) Low noise
Semiconductor (MOSFET) FETs operation (C) High gain bandwidth behaviour
depends upon the flow of majority carriers (D) Current controlled behaviour
only. It is therefore a unipolar device. BJT 73. For an n-channel silicon FET with
= 3 104 cms and ND = 1015
is a bipolar device. FET is relatively
electron/cm3, find the pinch is of
immune to radiation and it exhibits a high voltage.
input resistance tipically many mega-ohms. 1 9 Newton m
2
= 12 0 4 = 9 10 Coulomb
It is less noisy than a tube or a bipolar 0

transistor. It exhibits no offset voltage at (A) 6.00 V (B) 5.4 V

zero drain current, and hence makes an (C) 6.8 V (D) 4.5 V

excellent signal chopper. FETs are more

74. An FET is a better chopper than BJT
temperature stable than BJTs. JFET is because it has
three terminal device with gate applied (A) higher series on resistance
potential control the flow of charges from (B) lower input current
(C) higher input impedance
source to drain. The n-channel MOSFET
(D) lower off-set voltage
consists of a lightly p-type substrate into
which two highly doped n+ regions are 75. For an n-channel enhancement mode
MOSFET the drain current
diffused. These n+ sections, which will act
(A) decreases with increase in drain
as the source and drain. A thin layer of current.
insulating SiO2 is grown over the surface (B) decreases with decreases in
drain voltage.
of the structure and holes are cut into the
(C) increases with increase in
oxide layer, allowing contact with the drain voltage.
source and drain. This layer results in an (D) increases with decrease in gate
voltage.
extremely high input resistance.
D-88-13 10 Paper-III
 Space For Rough Work

Paper-III 11 D-88-13