PD - 96108

IRF7341QPbF
Typical Applications HEXFET Power MOSFET
Anti-lock Braking Systems (ABS)
Electronic Fuel Injection VDSS RDS(on) max ID
Air bag
55V 0.050@VGS = 10V 5.1A
Benefits
Advanced Process Technology 0.065@VGS = 4.5V 4.42A
Dual N-Channel MOSFET
Ultra Low On-Resistance
175C Operating Temperature
Repetitive Avalanche Allowed up to Tjmax
Automotive [Q101] Qualified
Lead-Free
Description S1
1 8
D1
Specifically designed for Automotive applications, these 2 7
G1 D1
HEXFET Power MOSFETs in a Dual SO-8 package utilize
the lastest processing techniques to achieve extremely low S2
3 6
D2
on-resistance per silicon area. Additional features of these
4 5
Automotive qualified HEXFET Power MOSFETs are a 175C G2 D2
junction operating temperature, fast switching speed and
improved repetitive avalanche rating. These benefits com- SO-8
Top View
bine to make this design an extremely efficient and reliable
device for use in Automotive applications and a wide variety
of other applications.
The 175C rating for the SO-8 package provides improved
thermal performance with increased safe operating area and
dual MOSFET die capability make it ideal in a variety of
power applications. This dual, surface mount SO-8 can
dramatically reduce board space and is also available in
Tape & Reel.

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain-Source Voltage 55 V
ID @ TA = 25C Continuous Drain Current, VGS @ 10V 5.1
ID @ TA = 70C Continuous Drain Current, VGS @ 10V 4.2 A
IDM Pulsed Drain Current 42
PD @TA = 25C Maximum Power Dissipation 2.4 W
PD @TA = 70C Maximum Power Dissipation 1.7 W
Linear Derating Factor 16 mW/C
VGS Gate-to-Source Voltage 20 V
EAS Single Pulse Avalanche Energy 140 mJ
IAR Avalanche Current 5.1 A
EAR Repetitive Avalanche Energy See Fig. 14, 15, 16 mJ
TJ , TSTG Junction and Storage Temperature Range -55 to + 175 C

Thermal Resistance
Parameter Max. Units
RJA Maximum Junction-to-Ambient 62.5 C/W

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IRF7341QPbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 V VGS = 0V, ID = 250A
V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient 0.052 V/C Reference to 25C, ID = 1mA
0.043 0.050 VGS = 10V, ID = 5.1A
RDS(on) Static Drain-to-Source On-Resistance
0.056 0.065 VGS = 4.5V, ID = 4.42A
VGS(th) Gate Threshold Voltage 1.0 V VDS = VGS, ID = 250A
gfs Forward Transconductance 10.4 S VDS = 10V, ID = 5.2A
2.0 VDS = 44V, VGS = 0V
IDSS Drain-to-Source Leakage Current A
25 VDS = 44V, VGS = 0V, TJ = 150C
Gate-to-Source Forward Leakage 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
Qg Total Gate Charge 29 44 ID = 5.2A
Qgs Gate-to-Source Charge 2.9 4.4 nC VDS = 44V
Qgd Gate-to-Drain ("Miller") Charge 7.3 11 VGS = 10V
td(on) Turn-On Delay Time 9.2 VDD = 28V
tr Rise Time 7.7 ID = 1.0A
ns
td(off) Turn-Off Delay Time 31 RG = 6.0
tf Fall Time 12.5 VGS = 10V
Ciss Input Capacitance 780 VGS = 0V
Coss Output Capacitance 190 pF VDS = 25V
Crss Reverse Transfer Capacitance 66 = 1.0MHz

Source-Drain Ratings and Characteristics

Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

2.4
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G

42
(Body Diode) p-n junction diode. S

VSD Diode Forward Voltage 1.2 V TJ = 25C, IS = 2.6A, VGS = 0V

trr Reverse Recovery Time 51 77 ns TJ = 25C, IF = 2.6A
Qrr Reverse Recovery Charge 76 114 nC di/dt = 100A/s

Notes:
Repetitive rating; pulse width limited by Surface mounted on FR-4 board, t 10sec.
max. junction temperature.
Pulse width 300s; duty cycle 2%.

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 IRF7341QPbF

100 100
VGS VGS
TOP 15.0V TOP 15.0V
10.0V 10.0V
ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

7.0V 7.0V
5.5V 5.5V
4.5V 4.5V
4.0V 4.0V
10 3.5V 10 3.5V
BOTTOM 2.7V BOTTOM 2.7V
2.7V
2.7V

1 1

20s PULSE WIDTH 20s PULSE WIDTH

Tj = 25C Tj = 175C
0.1 0.1
0.1 1 10 100 0.1 1 10 100
VDS, Drain-to-Source Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

100 2.5
ID = 5.2A
R DS(on) , Drain-to-Source On Resistance
I D , Drain-to-Source Current (A)

TJ = 25 C 2.0
(Normalized)

TJ = 175 C 1.5

10

1.0

0.5

V DS = 25V
20s PULSE WIDTH VGS = 10V
1 0.0
2.0 3.0 4.0 5.0 6.0 7.0 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS , Gate-to-Source Voltage (V) TJ , Junction Temperature ( C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

Vs. Temperature
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 IRF7341QPbF

1400 20
VGS = 0V, f = 1 MHZ ID = 5.2A VDS = 44V
C iss = Cgs + Cgd , Cds VDS = 27V

VGS , Gate-to-Source Voltage (V)

1200 SHORTED VDS = 11V
Crss = Cgd 16
1000 Coss = Cds + Cgd
C, Capacitance(pF)

800 Ciss 12

600
8

400

Coss 4
200
Crss
0
0
1 10 100 0 10 20 30 40 50
VDS, Drain-to-Source Voltage (V) QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.

Drain-to-Source Voltage Gate-to-Source Voltage

100 1000
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ISD , Reverse Drain Current (A)

TJ = 175 C
100
I D , Drain Current (A)

10
10us

TJ = 25 C 10 100us

1ms
1
1 10ms

TC = 25 C
TJ = 175 C
V GS = 0 V Single Pulse
0.1 0.1
0.2 0.5 0.8 1.1 1.4 0.1 1 10 100 1000
VSD ,Source-to-Drain Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRF7341QPbF

6.0 RD
V DS

5.0 VGS
D.U.T.
RG
I D , Drain Current (A)

+
4.0 - VDD

10V
3.0 Pulse Width 1 s
Duty Factor 0.1 %

2.0
Fig 10a. Switching Time Test Circuit

1.0
VDS
90%
0.0
25 50 75 100 125 150 175
TC , Case Temperature ( C)

10%
Fig 9. Maximum Drain Current Vs. VGS

Case Temperature td(on) tr t d(off) tf

Fig 10b. Switching Time Waveforms

100

D = 0.50
Thermal Response (Z thJA )

0.20
10
0.10
0.05

0.02
1 0.01

PDM

SINGLE PULSE t1
(THERMAL RESPONSE)
0.1 t2

Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJA + TA
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
t1 , Rectangular Pulse Duration (sec)

Fig 10. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient

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 IRF7341QPbF

0.070 0.100

( )
RDS(on), Drain-to -Source On Resistance)

RDS ( on ) , Drain-to-Source On Resistance

(

0.060
0.080

0.050

0.060
0.040
VGS = 4.5V

ID = 7.1A 0.040
0.030

VGS = 10V

0.020 0.020
2.0 4.0 6.0 8.0 10.0 12.0 14.0 16.0 0 10 20 30 40 50 60
VGS, Gate -to -Source Voltage (V) ID , Drain Current ( A )

Fig 11. Typical On-Resistance Vs. Fig 12. Typical On-Resistance Vs.
Gate Voltage Drain Current

QG
10 V 400
ID
QGS QGD
TOP 2.1A
4.3A
VG 320 BOTTOM 5.1A
EAS , Single Pulse Avalanche Energy (mJ)

Charge 240

Fig 13a. Basic Gate Charge Waveform

Current Regulator 160
Same Type as D.U.T.

50K

12V .2F 80
.3F

+
V
D.U.T. - DS
0
VGS 25 50 75 100 125 150 175

Starting Tj, Junction Temperature ( C)

3mA

IG ID
Current Sampling Resistors
Fig 14. Maximum Avalanche Energy
Fig 13b. Gate Charge Test Circuit Vs. Drain Current
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 IRF7341QPbF

100

Duty Cycle = Single Pulse

10
Allowed avalanche Current vs
Avalanche Current (A)

avalanche pulsewidth, tav

1 0.01 assuming Tj = 25C due to
avalanche losses
0.05
0.1 0.10

0.01

0.001
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01 1.0E+00 1.0E+01 1.0E+02
tav (sec)

Fig 15. Typical Avalanche Current Vs.Pulsewidth

140 Notes on Repetitive Avalanche Curves , Figures 15, 16:

TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 10% Duty Cycle 1. Avalanche failures assumption:
120
ID = 5.1A Purely a thermal phenomenon and failure occurs at a
EAR , Avalanche Energy (mJ)

temperature far in excess of T jmax. This is validated for

100 every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is
80 not exceeded.
3. Equation below based on circuit and waveforms shown in
Figures 12a, 12b.
60 4. PD (ave) = Average power dissipation per single
avalanche pulse.
40 5. BV = Rated breakdown voltage (1.3 factor accounts for
voltage increase during avalanche).
6. Iav = Allowable avalanche current.
20
7. T = Allowable rise in junction temperature, not to exceed
Tjmax (assumed as 25C in Figure 15, 16).
0 tav = Average time in avalanche.
25 50 75 100 125 150 175 D = Duty cycle in avalanche = tav f
Starting T J , Junction Temperature (C) ZthJC(D, tav ) = Transient thermal resistance, see figure 11)

PD (ave) = 1/2 ( 1.3BVIav) = DT/ ZthJC

Fig 16. Maximum Avalanche Energy Iav = 2DT/ [1.3BVZth]
Vs. Temperature EAS (AR) = PD (ave)tav

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IRF7341QPbF
SO-8 Package Outline
Dimensions are shown in millimeters (inches)
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SO-8 Part Marking

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Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
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 IRF7341QPbF
SO-8 Tape and Reel
Dimensions are shown in millimeters (inches)

TERMINAL NUMBER 1

12.3 ( .484 )
11.7 ( .461 )

8.1 ( .318 )
7.9 ( .312 ) FEED DIRECTION

NOTES:
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.

330.00
(12.992)
MAX.

14.40 ( .566 )
12.40 ( .488 )
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. OUTLINE CONFORMS TO EIA-481 & EIA-541.

Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
Data and specifications subject to change without notice.
This product has been designed and qualified for the Autyomotive [Q101] market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.07/2007
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