Professional Documents
Culture Documents
DESCRIPTION
The 2SK4213 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics,
and designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.
FEATURES
Low on-state resistance
RDS(on)1 = 6.0 m MAX. (VGS = 10 V, ID = 30 A)
RDS(on)2 = 9.5 m MAX. (VGS = 4.5 V, ID = 20 A)
Low total gate charge
QG = 34 nC TYP. (VDD = 15 V, VGS = 10 V, ID = 30 A)
4.5 V drive available
Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER LEAD PLATING PACKING PACKAGE
Note
2SK4213-ZK-E1-AY
Pure Sn (Tin) Tape 2500 p/reel TO-252 (MP-3ZK) typ. 0.27 g
Note
2SK4213-ZK-E2-AY
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Gate to Source Threshold Voltage VGS(th) VDS = VGS, ID = 250 A 1.5 3.0 V
Note
Forward Transfer Admittance | yfs | VDS = 5 V, ID = 16 A 12 27 S
Note
Drain to Source On-state Resistance RDS(on)1 VGS = 10 V, ID = 30 A 4.2 6.0 m
Fall Time tf 10 ns
Note Pulsed
D.U.T.
D.U.T.
RG = 25 L
RL VGS
PG. VGS 90%
50 VDD 10% VGS
Wave Form
RG 0
VGS = 20 0 V PG. VDD
VDS
BVDSS 90% 90%
IAS VGS VDS
VDS 0 10% 10%
ID VDS 0
Wave Form
VDD
td(on) tr td(off) tf
= 1 s ton toff
Starting Tch Duty Cycle 1%
D.U.T.
IG = 2 mA RL
PG. 50 VDD
ID(pulse)
100
PW
100 ID(DC)
ID - Drain Current - A
=
1i 0
0
80 s
DC
d
it e
60 10 m )
Li V
Po
w
1i 0
)
on
er
S( =
D
D
R
is
S
G
si
(V
p
40
at
io
1 ms
n
Li
1
m
it e
d
10 ms
20
TC = 25C
Single Pulse
0 0.1
0 25 50 75 100 125 150 175 0.01 0.1 1 10 100
Rth(ch-A) = 125C/W
100
10
Rth(ch-C) = 2.78C/W
1
0.1
Single Pulse
0.01
100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
30 4
3
ID - Drain Current - A
20
TA = 125C
75C
2
25C
55C
10
1
VDS = 10 V VDS = VGS
Pulsed ID = 250 A
0 0
0 1 2 3 4 5 -75 -25 25 75 125 175
VGS - Gate to Source Voltage - V Tch - Channel Temperature - C
TA = 150C
10 10
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE CHANNEL TEMPERATURE
RDS(on) - Drain to Source On-state Resistance - m
15 10
ID = 30 A
Pulsed VGS = 4.5 V, ID = 20 A
8
10
6
10 V, 30 A
4
5
Pulsed
0 0
0 5 10 15 20 -75 -25 25 75 125 175
10000 10
VGS - Gate to Source Voltage - V
Ciss, Coss, Crss - Capacitance - pF
VDD = 5 V
8
15 V
20 V
Ciss 6
1000
4
Coss 2
VGS = 0 V
f = 1 MHz Crss ID = 30 A
100 0
0.1 1 10 100 0 5 10 15 20 25 30 35 40
VDS - Drain to Source Voltage - V QG - Gate Charge - nC
1000
IF - Diode Forward Current - A
VGS = 10 V
100
4.5 V 0V
10
Pulsed
0.1
0 0.5 1 1.5
TO-252 (MP-3ZK)
6.50.2 2.30.1
5.1 TYP. 1.0 TYP. 0.50.1
4.3 MIN.
No Plating
4
10.4 MAX. (9.8 TYP.)
4.0 MIN.
6.10.2
0.51 MIN.
1 2 3
0.8
No Plating
1.0
1. Gate
2. Drain
3. Source
4. Fin (Drain)
EQUIVALENT CIRCUIT
Drain
Body
Gate Diode
Source
Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the
device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate
it once, when it has occurred.