MDD1502 Single N-Channel Trench MOSFET 30V

MDD1502
Single N-channel Trench MOSFET 30V, 45.7A, 8.5m

General Description Features

The MDD1502 uses advanced MagnaChips MOSFET
VDS = 30V
Technology, which provides high performance in on-state
ID = 45.7A @VGS = 10V
resistance, fast switching performance and excellent
RDS(ON) (MAX)
quality. MDD1502 is suitable device for DC to DC < 8.5m @VGS = 10V
converter and general purpose applications. < 13.0m @VGS = 4.5V

100% UIL Tested

100% Rg Tested

Absolute Maximum Ratings (Ta = 25oC)

Characteristics Symbol Rating Unit

Drain-Source Voltage VDSS 30 V
Gate-Source Voltage VGSS 20 V
TC=25oC 45.7
TC=70oC 36.6
Continuous Drain Current (1) o
ID A
TA=25 C 20.4(3)
TA=70oC 16.3(3)
Pulsed Drain Current IDM 100 A
o
TC=25 C 31.2
TC=70oC 20.0
Power Dissipation o
PD W
TA=25 C 6.2(3)
TA=70oC 4.0(3)
(2)
Single Pulse Avalanche Energy EAS 47 mJ
o
Junction and Storage Temperature Range TJ, Tstg -55~150 C

Thermal Characteristics

Characteristics Symbol Rating Unit

(1)
Thermal Resistance, Junction-to-Ambient RJA 20.0 o
C/W
Thermal Resistance, Junction-to-Case RJC 4.0

May. 2011. Version 1.2 1 MagnaChip Semiconductor Ltd.

 MDD1502 Single N-Channel Trench MOSFET 30V
Ordering Information

Part Number Temp. Range Package Packing Quantity Rohs Status

o
MDD1502RH -55~150 C D-PAK Tape & Reel 3000 units Halogen Free

Electrical Characteristics (TJ =25oC)

Characteristics Symbol Test Condition Min Typ Max Unit

Static Characteristics
Drain-Source Breakdown Voltage BVDSS ID = 250A, VGS = 0V 30 - -
V
Gate Threshold Voltage VGS(th) VDS = VGS, ID = 250A 1.6 2.0 2.7
VDS = 30V, VGS = 0V - - 1
Drain Cut-Off Current IDSS o
TJ=55 C - - 5 A
Gate Leakage Current IGSS VGS = 20V, VDS = 0V - - 0.1
VGS = 10V, ID = 16A - 7.4 8.5
o
Drain-Source ON Resistance RDS(ON) TJ=125 C - 10.7 12.3 m
VGS = 4.5V, ID = 13A - 10.8 13.0
Forward Transconductance gfs VDS = 5V, ID = 10A - 25 - S
Dynamic Characteristics
Total Gate Charge Qg(10V) 10.7 14.3 17.9
Total Gate Charge Qg(4.5V) VDS = 15.0V, ID = 16A, 5.0 6.7 8.4
nC
Gate-Source Charge Qgs VGS = 10V - 2.6 -
Gate-Drain Charge Qgd - 2.3 -
Input Capacitance Ciss 696 928 1160
VDS = 15.0V, VGS = 0V,
Reverse Transfer Capacitance Crss 68 90 113 pF
f = 1.0MHz
Output Capacitance Coss 132 176 220
Turn-On Delay Time td(on) - 7.2 -
Rise Time tr VGS = 10V, VDS = 15.0V, - 12.0 -
ns
Turn-Off Delay Time td(off) ID = 16A , RG = 3.0 - 22.8 -
Fall Time tf - 8.1 -
Gate Resistance Rg f=1 MHz - 3.5 5.0
Drain-Source Body Diode Characteristics
Source-Drain Diode Forward Voltage VSD IS = 16A, VGS = 0V - 0.8 1.1 V
Body Diode Reverse Recovery Time trr - 20.4 30.6 ns
IF = 16A, dl/dt = 100A/s
Body Diode Reverse Recovery Charge Qrr - 11.9 17.9 nC

Note :

1. Surface mounted FR-4 board by JEDEC (jesd51-7)

2. EAS is tested at starting Tj = 25, L = 0.1mH, IAS = 17.0A, VDD = 27V, VGS = 10V.
3. T < 10sec.

May. 2011. Version 1.2 2 MagnaChip Semiconductor Ltd.

 MDD1502 Single N-Channel Trench MOSFET 30V
40 16
VGS = 10V
4.0V

Drain-Source On-Resistance [m]

3.5V
4.5V
30 12 VGS = 4.5V
ID, Drain Current [A]

5.0V

20 8 VGS = 10V

3.0V

10 4

0 0
0.0 0.5 1.0 1.5 2.0 2.5 3.0 5 10 15 20 25 30 35

VDS, Drain-Source Voltage [V] ID, Drain Current [A]

Fig.1 On-Region Characteristics Fig.2 On-Resistance Variation with

Drain Current and Gate Voltage

1.8 100

Notes :
Notes :
ID = 16.0A
1. VGS = 10 V
1.6 2. ID = 16.0 A
Drain-Source On-Resistance

80
Drain-Source On-Resistance
RDS(ON), (Normalized)

1.4
RDS(ON) [m ],

60

1.2

40

1.0

TA = 25
20
0.8

0.6 0
-50 -25 0 25 50 75 100 125 150 2 3 4 5 6 7 8 9 10

o VGS, Gate to Source Volatge [V]

TJ, Junction Temperature [ C]

Fig.3 On-Resistance Variation with Fig.4 On-Resistance Variation with

Temperature Gate to Source Voltage

16
Notes :
Notes : VGS = 0V
VDS = 5V 1
10
IDR, Reverse Drain Current [A]

12
ID, Drain Current [A]

TA=25
0
8 10

TA=25

4
-1
10

0 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1

0 1 2 3 4 5
VSD, Source-Drain voltage [V]
VGS, Gate-Source Voltage [V]

Fig.5 Transfer Characteristics Fig.6 Body Diode Forward Voltage

Variation with Source Current and
Temperature

May. 2011. Version 1.2 3 MagnaChip Semiconductor Ltd.

 MDD1502 Single N-Channel Trench MOSFET 30V
10 1200
Ciss = Cgs + Cgd (Cds = shorted)
Note : ID = 16A
Coss = Cds + Cgd
VDS = 15V Ciss Crss = Cgd
8
VGS, Gate-Source Voltage [V]

900

Capacitance [pF]
6

600

Notes ;
300 Coss 1. VGS = 0 V
2. f = 1 MHz
2
Crss

0 0
0 4 8 12 16 0 5 10 15 20 25 30

Q G, Total Gate Charge [nC] VDS, Drain-Source Voltage [V]

Fig.7 Gate Charge Characteristics Fig.8 Capacitance Characteristics

60
Operation in This Area
is Limited by R DS(on)
2
10 50

10 ms
ID, Drain Current [A]

ID, Drain Current [A]

100 ms 40

10
1 1s
10s
DC 30

0
10 20

Single Pulse 10
-1 TJ=Max rated
10
TC=25
0
-1 0 1 2 25 50 75 100 125 150
10 10 10 10

VDS, Drain-Source Voltage [V] T A, Case Temperature []

Fig.9 Maximum Safe Operating Area Fig.10 Maximum Drain Current vs.
Case Temperature

1
10

D=0.5
Z JA(t), Thermal Response

0 0.2
10
0.1
0.05

-1
0.02
10

0.01

-2
single pulse
10 Notes :
Duty Factor, D=t1/t2
PEAK TJ = PDM * Z JC* R JC(t) + TC

-3
10
-4 -3 -2 -1 0 1 2 3
10 10 10 10 10 10 10 10
t1, Rectangular Pulse Duration [sec]

Fig.11 Transient Thermal Response

Curve

May. 2011. Version 1.2 4 MagnaChip Semiconductor Ltd.

 MDD1502 Single N-Channel Trench MOSFET 30V
Package Dimension

D-PAK (TO-252)

Dimensions are in millimeters, unless otherwise specified

May. 2011. Version 1.2 5 MagnaChip Semiconductor Ltd.

 MDD1502 Single N-Channel Trench MOSFET 30V

DISCLAIMER:

The Products are not designed for use in hostile environments, including, without limitation, aircraft, nuclear power
generation, medical appliances, and devices or systems in which malfunction of any Product can reasonably be
expected to result in a personal injury. Sellers customers using or selling Sellers products for use in such
applications do so at their own risk and agree to fully defend and indemnify Seller.

MagnaChip reserves the right to change the specifications and circuitry without notice at any time. MagnaChip does not consider responsibility
for use of any circuitry other than circuitry entirely included in a MagnaChip product. is a registered trademark of MagnaChip
Semiconductor Ltd.

May. 2011. Version 1.2 6 MagnaChip Semiconductor Ltd.