AO3401

30V P-Channel MOSFET

General Description Product Summary

The AO3401 uses advanced trench technology to provide VDS -30V

excellent RDS(ON), low gate charge and operation with gate ID (at VGS=-10V) -4.0A
voltages as low as 2.5V. This device is suitable for use as RDS(ON) (at VGS=-10V) < 50m
a load switch or in PWM applications.
RDS(ON) (at VGS =-4.5V) < 60m
RDS(ON) (at VGS=-2.5V) < 85m

SOT23
Top View Bottom View D

D
D

G
S G

S
G S

Absolute Maximum Ratings TA=25C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS 12 V
Continuous Drain TA=25C -4
ID
Current TA=70C -3.2 A
C
Pulsed Drain Current IDM -27
TA=25C 1.4
B
PD W
Power Dissipation TA=70C 0.9
Junction and Storage Temperature Range TJ, TSTG -55 to 150 C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t 10s 70 90 C/W
RJA
Maximum Junction-to-Ambient A D Steady-State 100 125 C/W
Maximum Junction-to-Lead Steady-State RJL 63 80 C/W

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 AO3401

Electrical Characteristics (TJ=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-250A, VGS=0V -30 V
VDS=-30V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current A
TJ=55C -5
IGSS Gate-Body leakage current VDS=0V, VGS= 12V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -0.5 -0.9 -1.3 V
ID(ON) On state drain current VGS=-10V, VDS=5V -27 A
VGS=-10V, ID=-4.0A 41 50
m
TJ=125C 62 75
RDS(ON) Static Drain-Source On-Resistance
VGS=-4.5V, ID=-3.7A 47 60 m
VGS=-2.5V, ID=-2A 60 85 m
gFS Forward Transconductance VDS=-5V, ID=-4.0A 17 S
VSD Diode Forward Voltage IS=1A,VGS=0V -0.7 -1 V
IS Maximum Body-Diode Continuous Current -2 A
ISM Pulsed Body-Diode CurrentB -27 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 645 pF
Coss Output Capacitance VGS=0V, VDS=-15V, f=1MHz 80 pF
Crss Reverse Transfer Capacitance 55 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 4 7.8 12
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 14 nC
Qg(4.5V) Total Gate Charge 7 nC
VGS=-10V, VDS=-15V, ID=-4.0A
Qgs Gate Source Charge 1.5 nC
Qgd Gate Drain Charge 2.5 nC
tD(on) Turn-On DelayTime 6.5 ns
tr Turn-On Rise Time VGS=-10V, VDS=-15V, 3.5 ns
tD(off) Turn-Off DelayTime RL=3.75, RGEN=3 41 ns
tf Turn-Off Fall Time 9 ns
trr Body Diode Reverse Recovery Time IF=-4.0A, dI/dt=100A/s 11 ns
Qrr Body Diode Reverse Recovery Charge IF=-4.0A, dI/dt=100A/s 3.5 nC
A. The value of RJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150C, using 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25C.
D. The RJA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300s pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150C. The SOA curve provides a single pulse rating.

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

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 AO3401

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25 20
10V VDS=-5V
4.5V
20
15

15
-ID (A)

-ID(A)
-2.5V 10
10

5 125C 25C
5
VGS=-2.0V

0 0
0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3
-VDS (Volts) -VGS(Volts)
Fig 1: On-Region Characteristics (Note E) Figure 2: Transfer Characteristics (Note E)

100 1.8

Normalized On-Resistance
1.6 VGS=-10V
80 ID=-4A
VGS=-2.5V
)
RDS(ON) (m

1.4
17
VGS=-4.5V
60 ID=-3.7A
VGS=-4.5V 5
1.2 2
VGS=-2.5V
40 ID=-2A 10
VGS=-10V 1

20 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (C) 0
Voltage (Note E) Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)

150 1.0E+01
ID=-4A
130 1.0E+00
40
110 1.0E-01
)
RDS(ON) (m

-IS (A)

90 125C 1.0E-02 125C

70 1.0E-03 25C

50 1.0E-04
25C

30 1.0E-05
0 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
-VGS (Volts) -VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics (Note E)
(Note E)

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 AO3401

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

10 1000
VDS=-15V
ID=-4A
8 800
Ciss

Capacitance (pF)
-VGS (Volts)

6 600

4 400

Coss
2 200

Crss
0 0
0 5 10 15 0 5 10 15 20 25
Qg (nC) -VDS (Volts)
Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0 10000
TA=25C

10.0 10s 1000

RDS(ON)
Power (W)

limited 100s
-ID (Amps)

100
1.0 1ms
10ms
10
0.1 TJ(Max)=150C
TA=25C 10s
DC
1
0.0
0.00001 0.001 0.1 10 1000
0.01 0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-to-
Ambient (Note F)
Operating Area (Note F)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZJA.RJA
Z JA Normalized Transient

D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

Thermal Resistance

1 RJA=125C/W

0.1

PD
0.01
Single Pulse
Ton
T
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)

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 AO3401

Gate Charge Test Circuit & Waveform

Vgs
Qg
- -10V
VDC
-
+ Vds Qgs Qgd
VDC
+
DUT
Vgs

Ig

Charge

Resistive Switching Test Circuit & Waveforms

RL
Vds ton toff

td(on) tr t d(off) tf
Vgs
-
Vgs DUT VDC
Vdd 90%
Rg
+

Vgs 10%
Vds

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

2
L E AR= 1/2 LIAR
Vds

Id Vds
- BVDSS
Vgs
Vgs VDC
Vdd
Rg
+ Id
I AR
DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L -Isd -I F
Isd dI/dt
+ Vdd -I RM
Vgs VDC
Vdd
Ig
- -Vds

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