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Tutorial:

Modular Multilevel Converter


- Fundamentals and Applications -

Rainer Marquardt, Yeqi Wang


Institute for Power Electronics and Control (IPEC)
University of Bundeswehr Munich, Germany
Agenda

1. Introduction
2. Fundamentals of Modular Multilevel Converter
3. Submodule Topologies
4. Dimensioning of the components
5. Redundant Operation and Fault Tolerance
6. Control Methods
7. Applications and Projects
8. Outlook and Future trends

2
1. Main future converter requirements

- Full controllability in normal and fault conditions

- Elimination of passive filters

- Minimization of EMC-filters

- Suitability for common DC-Bus (Energy exchange, multiple drives)

- Reduced power loss, improved efficiency

- High availability by inherent redundancy

- Improved scalability by use of standardized sub components

3
1. Conventional converter topologies
Neutral Point Clamped Converter
P
T11

T12 C1 DC-
busbar
NPC Converter: T13
(5-level)
(Akagi, Nabae, Takahashi)
T14 C2

Commutation V AC Vd
Path: T21

T22 C3

T23

T24 C4
N

Well established topology for three levels (motor drives, mainly)


Complicated construction for higher number of levels
Critical failure propagation with increasing number of levels
Capacitors at DC-Bus are not minimized/eliminated
4
1. Conventional converter topologies
Flying Capacitor Clamped Converter
P

T11
C41 DC-
T12
C31 busbar
FCC Converter: T13
(5-level) C42
C21
T14
(Meynard, Foch)
C11
Commutation Vd
Path: T21 V AC
C32
T22 C22
C43
T23
C33
C44
T24
N

Proven solution for low number of levels


Long commutation path and non scalable construction for higher number
of levels
Capacitors at DC-Bus are not minimized/eliminated
5
1. Conventional converter topologies
Cascaded H-Bridge Converter

(Robicon)

Well established for single motor drives (without active front end)
Very complicated transformer with increasing number of levels
No DC-Bus available
6
1. Conventional converter topologies
HVDC-Transmission using Two-Level converter

Characteristics:

High di/dt of arms currents (ia)


(Complex construction, EMI)
Need for bulky filters at AC-side
(Space requirement and transient
behavior)
High pulse frequency necessary
(High switching losses)
Bulky capacitors at DC-Bus
Severe problems with DC-side failure
management
7
1. Introduction
Drawbacks of capacitors at DC-Bus

In multiterminal configuration, management of DC-


side failures is impeded:

High surge currents after DC-short circuits can


lead to mechanical damage and arcing
Secondary damage of not involved converters
at same DC-Bus can occur
In normal and transient conditons, resonance
currents in the DC-Bus network are disturbing
Electrolytic capacitor
Metalized film capacitor

8
2. Fundamentals of Modular Multilevel Converter
Modular Multilevel Converter (M2C or MMC)

Strictly scalable (modular) construction


No need for passive filters at AC-side and
DC-side
Low di/dt of arms currents
(Low EMI and acoustic noise)
No need for transformers (2terminal SM)
Low pulse frequency (fP 3f1) sufficient

9
2. Fundamentals of Modular Multilevel Converter
Features:

Submodules are simple 2-terminal devices


Critical communication loops solely internally
Submodules suitable for wide range of applications
Freely scalable by adapting number of submodules
No power supply necessary for submodules

Advantages:

Strictly modular concerning industrial implementation


No AC-filters necessary
No DC-Link capacitor at DC-Bus
Direct and fast control of AC- and DC-side

10
2. Fundamentals of Modular Multilevel Converter
Comparison of 2-level converter and MMC
Arms currents AC-Terminal voltages

2-level Converter

M2C

Arm currents of M2C are not chopped (simplified HV-construction, low EMI)
No filters at AC-side required
No special requirements for transformers, motors, cabling
No capacitors at DC-Bus
11
2. Comparison of 2-level converter and MMC
1 1
0.995 0.995
0.99 0.99
0.985 0.985
Efficiency

0.98

Efficiency
0.98
0.975 0.975
0.97 0.97
0.965 0.965
0.96 0.96
0.955 0.955
0.95 0.95
0 50 100 150 200 250 300 350 0 50 100 150 200 250 300 350
Real Power (MW) Real Power (MW)

M2C with HB-SM M2C with HB-SM


Two-level-Converter M2C with CDSM

Comparison of typ. efficiencies (pure semiconductor losses)


Conditions: Vd = 300 kV, Vc = 2,4 kV, cos = 0,88; 4,5 kV IGBT, no redundancy included)

12
2. Fundamentals of Modular Multilevel Converter
First assumptions for idealized operation

Number of submodules per arm (n) is high


All submodules of each arm are summarized as one voltage source uz
Arm voltage can be controlled continuously within its range (0 uz nuc)
Converter is controlled by the arm voltages
AC-currents are sinusoidal
DC-current/voltage are constant/smooth

13
2. Simplified equivalent circuit of the MMC
Arm currents (HB-SM)
DC-current distribution:
Id/3 in each arm
Id
P

ia1 ia3 ia5 AC-current distribution:


La La La Iw equally distributed between upper and
Ud/2
lower arms
uz1 uz3 uz5
1 1
ia1 (t ) = I d + w sin( t + )
uw1 iw1 iw2 iw3
3 2
Ud 0 L1 L2 L3
1 1
ia 2 (t ) = I d w sin( t + )
3 2
uz2 uz4 uz6
iw1 (t ) = ia1 (t ) ia 2 (t )
Ud/2
La La La
ia2 ia4 ia6 I d = ia1 (t ) + ia 3 (t ) + ia 5 (t )
N
Normalized current ratio m of each arm:
w
m= 2 = w 3
Id Id 2
3
14
2. Simplified equivalent circuit of the MMC
Arm voltages (HB-SM)

Id
P
Voltage range using HB-Submodules:
ia1 ia3 ia5
0 uz Ud
La La La
Ud
Ud/2
U z1 (t ) = w sin( t )
uz1 uz3 uz5
2
U
U z1 (t ) = d + w sin( t )
Ud
uw1 iw1 iw2 iw3 2
0 L1 L2 L3

Normalized voltage ratio k:


uz2 uz4 uz6
w 2 w
Ud/2
La La La k=
Ud
= (0 k 1)
Ud
ia2 ia4 ia6 2
N

Ud
U z1 (t ) = (1 k sin( t ) )
2

15
2. Simplified equivalent circuit of the MMC
Relationship between arm currents and voltages

Power between DC-side and AC-side (no power losses of converter)


! w w
Pd = U d I d = 3 cos = Pw
2 2
3 U I
U d I d = k d 2 m d cos
2 2 3

m k cos = 2

Lower limit: Upper limit:


2 2
mmin = =2 for HB-Submodules mmax = = +
k max cos max k min cos min

m 2 for k 1 Necessary for HB-Submodules

m 2 for k 2 Recommended for FB-Submodules


16
2. Real operation with circulating currents
Definition of circulating currents

Energy exchange between converter arms


internal circulating currents (iCC)
id
P
iCC1 1 1
ia1 ia3 iCC2 ia5 ia1 (t ) = I d + iw1 (t ) + iCC1 (t )
3 2
La La La
1 1
ia 2 (t ) = I d iw1 (t ) + iCC1 (t )
3 2
uz1 uz3 uz5
iw1 LS RCu uN1

L1 i LS RCu uN2
w2
Ud
L2 i LS RCu uN3 iCC1 (t ) + iCC 2 (t ) + iCC 3 (t ) = 0
w3

L3
uz2 uz4 uz6

La La La
ia2 ia4 ia6

17
2. Real operation with circulating currents
Conditions

No effect on the AC-side currents


No effect on the DC-side current
Arm current waveforms are identical in all arms (solely phase shifted)

Harmonics of circulating currents:


CC even-numbered multiple of and not dividable by 6
(2, 4, 8, 10, 14, 16, 20, 22, )

Therefore, CC = 2 is main component

iCC1 (t ) = CC sin(2 t + CC )
4
iCC 2 (t ) = CC sin 2 t + CC
3

18
2. Real operation with circulating currents
Control of circulating currents

Small voltage differences (U) of the arm voltages leading to


Voltage differences across the arm inductors La

CC1
a1 a5

a a Uz

z1 z5 U

ia
U
4 La

z2 z6

a a

a2 a6

19
2. Real operation with circulating currents
Reasonable usage of circulating currents:

Balancing arm energies


Reduction of capacitor voltage ripple

Total installed energy of converter


Comparison of 2-level VSC versus MMC (Example):
1) 2)
PS = 3386 kVA PS = 4310 kVA
1 = 2 50 Hz 1 = 2 50 Hz
Uc = 3220 V Uc = 1100 V
Cd = 2.08 mF C0 = 1.01 mF
WC = 10.78 kWs n = 8
Wtotal = 25 kWs Wtotal = 19.64 kWs (at equal power level)

Higher capacitor volume needed for MMC, typically

1) Rohner, S.: Untersuchung des Modularen Mehrpunktstromrichters M2C fr Mittelspannungsanwendungen


2) Schrder, D.: Leistungselektronische Schaltungen, 3. Auflage 20
2. Common mode voltages
Conventional VSC

Severe problems concerning:


EMC
Motor bearing currents
Long motor cablings

MMC

Any waveform of common mode voltage possible (including zero)


(sinusoidal, trapezoidal, triangular)
No problems with steep and high voltage gradients
For low frequency operation common mode voltage must be reintroduced
in a controlled manner

21
2. Common mode voltages
Conditions for introducing common mode voltages

No effects on the AC-side voltages


No effects on the DC-side voltage

Allowable harmonics of common mode voltage:

CM multiple of 3
(3, 6, 9, 12, 15, 18,)

22
2. Precharging of the capacitors

Black start from low auxiliary DC-Source (e.g. battery) possible


Sequential (time multiplex) charging of the submodules advantageous
(2n 1) submodules switched to ux = 0

U
UCnom U
d
8

U
Aux U
U U ... C16
C1 C2
2

0
0 1 2 3 4 5
t [ms]
23
2. Control of the DC-side

Degree of freedom to control the DC-side voltage/current directly


Multilevel DC-voltage is available
Number of DC-voltage levels very high (> 2n)
(Inductive voltage divider of arm inductors)
Equivalent circuit of the DC-side of MMC
1
ud (t ) = (ud1 (t ) + ud 2 (t ) + ud 3 (t ))
3
d

ud(t) and id(t) can be controlled very fast


(compared to conventional VSC)
a

stray
Important for rapid power changes of real
power
DC Advantageous for operation of several
converters on common DC-Bus
24
2. Control of the DC-side
Short circuits at the DC-side

Extremely high surge current in conventional VSC


Destruction of solid busbars, IGBTs is a severe problem
Destruction in non-involved converters connected to the same DC-Bus is
possible

MMC:

Rectified AC-current is flowing after DC-short circuit,


T1 D1
mainly
ia
Limitation by AC-reactances and arm inductors is X2
+
- UC
possible C0
Thy 1 T2 D2
Complete electronic current limitation possible by
replacing HB-Submodules with improved topology X1

25
2. Control of the DC-side
Electronic DC-current limitation

Submodules enabling negative terminal voltages are necessary


Alternatively, Electronic or Hybrid DC-Breaker at DC-side is possible:

LV

DB DB
HV
HV

DB

DC-Breaker using HV-IGBTs DC-Breaker using thyristors


Hfner J., Jacobson B.: Proactive Hybrid HVDC-breakers A key Wang, Y.; Marquardt, R.: A fast switching, scalable DC- 26
innovation for Reliable HVDC grid Breaker for meshed HVDC-SuperGrids
3. Submodule Topologies
Half-Bridge-Submodule (HB-SM):

Simplest submodule topology for MMC


Low semiconductor expenditure and minimized losses
No possibility for electronic DC-current limitation or cut-off
High volume of installed capacitors
27
3. Submodule Topologies
Full-Bridge-Submodule (FB-SM):

T1 D1 T3 D3 T1 D1 T3 D3
Ia + +
X2 - UC
-
C0 C0
T2 D2 T4 D4 T2 D2 T4 D4

X1

Double conduction losses (in comparison to HB-SM)


Electronic DC-current limitation or cut-off
Higher modulation factor (k 1.4) possible:
Decrease of AC-current possible (reduced losses)
Minimization of submodule capacitors achievable
28
3. Submodule Topologies
Half-Bridge mixed with Full-Bridge:

T1 D1 T1 D1 T3 D3

Ia UC +
+
X2 - - UC
C0 C0
T2 D2 T2 D2 T4 D4

X1

Reduced maximum amplitude of negative arm voltage is acceptable


Decreased AC-current and minimized capacitor volume is not achievable
(modulation factor: k 1)

No significant improvement compared to HB- or FB-SM


29
3. Submodule Topologies
Director switches plus Full-Bridge (Alternate Arm Converter, AAC):
(Merlin, M.M.C; et al.: A New Hybrid Multi-Level Voltage-Source Converter with DC-Fault Blocking Capability)
Ia
X2
VDR1
T1 D1 T1 D1 T3 D3

+
- UC
VDR2 C0
T2 D2 T2 D2 T4 D4

X1

Electronic DC-current limitation possible


IGBTs of director switches vulnerable by overvoltage surges from grid
(high energy)
At least two IGBTs per FB-SM necessary, owing to necessary voltage rating
(non-ideal overvoltage protection characteristics of VDRs)
Chopped arm currents and the need to reintroduce a large DC-filter
impose severe limitations 30
3. Submodule Topologies
Full-Bridges with reduced IGBT-count:
(Li, R.; et al.: A Hybrid Modular Multilevel Converter with Novel Three-Level Cells for DC Fault Blocking Capability)

T1 D1 T3 D3 T1 D1 T3 D3
Ia + +
X2 - UC
-
C0 C0
T2 D2 T4 D4 T2 D2 T4 D4

X1
Reduction of installed semiconductors
Negative voltage not possible in both directions of arm current

Conduction losses even higher than FB-submodules, because


Voltage modulation factor of (|k| > 1) not possible

31
3. Submodule Topologies
Cross coupled Half-Bridge-Submodules:
(Nami, A.; Wang, L.; Dijkhuizen, F.; Shukla, A.: Five level cross connected cell for cascaded converters)
T6 T8

T1 D1 D6 D8 T3 D3

ia +
UC1 S +
X2 - UC2 -
C0 C0
T2 D2 D9 D7 T4 D4

T9 T7
X1

The semiconductors of the cross-switches need double the blocking voltage


No advantage compared to FB-SM is achieved
(when closing the switch (S), the circuit becomes identical to two FB-SM in
series)
32
3. Submodule Topologies
Clamp-Double-Submodule (CD-SM):
(Marquardt, R.: Modular Multilevel Converter: An universal concept for HVDC-Networks and extended DC-Bus-applications)

D6
T1 D1 T3 D3

ia + +
X2 UC1 T5 D5 UC2
- -
C0 C0
T2 D2 T4 D4
D7

X1

Conduction losses increased only moderately (compared to HB-SM)


All semiconductors have same blocking voltage requirement (+)
Required installed silicon area increased only moderately (typ. factor 1.25)
Negative voltages not possible for all directions of arm current (|k| 1)
33
3. Submodule Topologies
Semi-Full-Bridge
(Ilves, K.: Modeling and Design of Modular Multilevel Converters for Grid Applications)
T6

T1 D1 D6 T3 D3

ia + +
X2 UC1 T5 D5
- UC2 -
C0 C0
T2 D2 D7 T4 D4

T7
X1
Diodes (D6 + D7) of the CD-SM extended by parallel IGBTs (T6, T7)
Characteristics similiar to Clamp-Double-SM
Negative voltages possible for both directions of arm current (k 1)
Switching sequences and capacitor balancing critical
(Capacitors switched in parallel)
34
3. Submodule Topologies

Comparison of typical power losses

Half-Bridge enables lowest power losses


(reference = 100%)

Full-Bridge power losses not generally acceptable

Future trend of improved power semiconductors


will not change the ranking

Essential progress in power semiconductors and


topologies will mitigate the differences in future

35
4. Dimensioning of the components
Semiconductors

Industrial MMC with n 6 submodules

IGBT voltage classes:


UCE = 1.2kV, 1.7kV, 3.3kV, 4.5kV and 6.5kV

Nominal Voltage UCnom of the submodule:


UCnom = 0.5 .. 0.6 UCE Recommended voltage utilization
For metallized film capacitors:
U C max (1 + ) U Cnom 1.3 U Cnom Recommended ripple voltage

36
4. Dimensioning of the components
Semiconductors

Definition of normalized DC-voltage modulation factor


b=
( )
Ud
2
n U C
Typical design range:
b = 0.35...0.45
Contribution of submodule to converter power (yield):
I
PSM = b U Cnom d
3
Required number of submodules per arm n:

n
( )
Ud
2
(1 + )
b U Cnom
37
4. Dimensioning of the semiconductors
Submodule currents

Definition factor of capacitor energy:


3
1 2

x = 1 2
m
Average currents through semicondutors:
1 I bm x
iT 1 = iD1 = b x Iw = d
4 3
1 1
iT 2 = (1 b x ) I w + I d
4 6
1 1
iD 2 = (1 b x ) I w I d
4 6
iT 2 , iD 2 > iT 1 , iD1

38
4. Dimensioning of the components
Capacitors

Advantages (+) and Disavantages () of distributed energy storage


compared to central DC-Bus capacitor

(+) Excellent scalability


(+) Redundant operation after submodule defects
(+) Better management of DC-Bus short circuits
(+) Improved controllability and fast dynamic response
() Total amount of installed energy storage is higher

39
4. Dimensioning of the capacitors
Necessary energy installed per arm

Conditions:

Idealized, sinusoidal arm voltages and arm currents


HB-submodules
No circulating current, no energy between the phases

Uz(t) ia(t)

Pz(t)

40
4. Dimensioning of the capacitors
Necessary energy installed per arm 1)
Pz (t ) = u z (t ) ia (t )

Uz(t) ia(t)
W z (t ) = Pz (t )dt
Wz = 0
+ W z = W z
x2

W z = Pz (t )dt
Pz(t) x1

Zeros of current:
1
x1 ( m, ) = arcsin
m
1
x2 ( m, ) = + arcsin
m
1) Conditions: 41
see page 40
4. Dimensioning of the capacitors
Necessary energy hub per submodule 1)

3
P 1 2

W z ( m ) = d m 1 2
3 m
3

2 PS k cos
2 2

W z ( k ) = 1
3 k 2
3
k cos 2

2
2 PS
WSM ( k ) = 1

3 k n 2

1) Conditions: 42
see page 40
4. Dimensioning of the capacitors
Necessary energy installed per submodule 1)

Energy per submodule capacitor:


1
WC = C0 U C2
2
Voltage ripple of submodule capacitor (0 0.3)

U C ,min = U C (1 ) U C ,max = U C (1 + )

Necessary capacitance:
1
WC ( , U C ) = WSM
4
WSM W z
C0 = =
2 U Cnom
2
2 n U Cnom
2

1) Conditions: 43
see page 40
4. Dimensioning of the capacitors
Necessary energy installed per submodule 1)

Energy ratio XZ:


X z = Wz
PS
3

2 k cos
2 2

X z ( k ) = 1
3 k 2

High energy required at low voltage modulation factor k


Phase angle has moderate influence on required energy installation
1) Conditions: 44
see page 40
4. Dimensioning of the components
Arm inductors: Comparison of two implementations

La La
La
+ 0
2
2La 4 La

La La

Discrete inductors Center tap (coupled)


Effective internal
2La 4La
inductance
Effective AC-load
+La/2 0
inductance
45
5. Redundant operation and Failure tolerance
Continued operation after defects
Advantages of the MMC:
Converter structure is realized by identical submodules (SM)
Power circuit has no additional, critical components
Communication (to SM) realized solely via a single duplex connection
Defect of submodule has no impact on other submodules
Surge currents restricted to interior of SM
Additional requirements for reliable operation:
Solid mechanical construction (surge currents in SM)
Guaranteed continuous on-state of defective submodule (or bypass)
Redundancy of superordinated control system
For High power: Plasma spreading must be prevented
(pressure proof housing of SM)
46
5. Redundant operation and Failure tolerance
Failure detection

Checking plausibility of measured capacitor voltages


(intrinsic safe method for both submodule and communication failures)

Optional measures after defect

Reduction of set value of AC-voltage


Reduction of set value of DC-voltage
Increasing capacitor voltage of all submodules

In general, reducing the set value of AC-voltage is the preferable measure (if
necessary)

47
6. Control methods
Main items

Balancing of the submodule capacitor voltages

Balancing of the arm energies

Control of the DC-side voltages/currents

Control of the AC-side voltages/current

48
6. Balancing of the arm energies
Definition of energies:
Example for converter with 3phases and 6 arms
WP = W1 + W3 + W5 Total energy of the positive arms
WN = W2 + W4 + W6 Total energy of the negative arms
WPh1 = W1 + W2 Energy in Phase 1
WPh2 = W3 + W4 Energy in Phase 2
WPh3 = W5 + W6 Energy in Phase 3

Wtotal = WP + WN Total energy of the converter

Primary goal:

WPh1 = WPh2 = WPh3 = 1/3 Wtotal Equalized phase energies


WP = WN = 1/2 Wtotal Equalized arm energies
49
6. Balancing of the arm energies
Usable degrees of freedom:

Circulating currents (ICC1, ICC2)

Asymmetric DC-current distribution between the three phases


deviation from Id/3

Asymmetric AC-current distribution between positive and negative arm


deviation from Iw/2

Common mode voltage (UCM)

Common mode voltage UCM


deviation from zero voltage

All degrees of freedom have no impact on the external values of converter

50
6. Balancing of the arm energies
Definition of energy ripple in the arms

Idealized case with zero circulating currents and zero common mode voltage
3

U d I d cos( ) 2 k cos( )
2 2
W z = 1
N k 2

Under these simplified conditions, the result is:

Energy ripple becomes very large for low frequencies


For N = 0: arm energies are impossible to balance

Special control of arm energies necessary

51
6. Operation at frequency zero
Worst case-condition at = 0:
Example: Frozen vector at = /2
id
P
1 iCC1
Phase 1 ia1 ia3 iCC2 ia5
0.8 Phase 2
Phase 3 La La La
0.6

0.4
uz1 uz3 uz5
0.2 LS RCu uN1
iw1
0
L1 iw2 LS RCu uN2
0.2 Ud
L2 iw3 LS RCu uN3
0.4

0.6 L3
uz2 uz4 uz6
0.8

1 La La La
0 /2 3/2 2
ia2 ia4 ia6

IPh1 = w and IPh2 = IPh3 = w/2


Uz3 || Uz5 Uz35 and Uz4 || Uz6 Uz46
La || La La and RCu || RCu RCu
U0 = Iw 3/2 RCu and Ud Id = U0 Iw
52
6. Operation at frequency zero
Equivalent circuit
Introduction of a common mode voltage with chosen period TCM fCM
(50Hz.. 200Hz, typical)
ICC1 -ICC1
P P
iz1 iz35 iz1 iz35

La 1/2 La La 1/2 La

Id Id
uz1 =
uz1 = 0 uz35 = U0 uz35 = Ud
(Ud U0)
iw

Iw (3/2) LS (3/2) RCu Iw (3/2) LS (3/2) RCu


Ud Ud
L1 L2,L3 L1 L2,L3
iw
uz46 =
uz2 = Ud uz2 = U0 uz46 = 0
(Ud - U0)

La 1/2 La La 1/2 La
iz2 iz46 iz2 iz46
N N

Positive half period of TCM Negative half period TCM

Amplitude: ICC1 = Id/2 + Iw/2


53
6. Operation at frequency zero
Resulting energy ripple with chosen common mode operation:
1
Wz = TCM U 0 I W per arm
2

1 1
WSM = TCM U 0 IW per submodule
n 2

Low values of energy ripple are achievable, when output voltage (U0) is
small
Further improvement possible using trapezoidal waveform of the
common mode voltage

54
6. Operation at frequency zero
Impact of the common mode voltage on circulting current (ICC)
U0
=c -c
Ud
U0'
U0
= d +1 d0

U CM = 1
2 U d [1 c (1 + 2d )]
1 c 2
CC 1 = 1 2 IW
1 c (1 + 2d )

High common mode voltage at 0 is


d = 0: CC 1 = 1 I (1 + c ) =
2 W
1 I + 12 I d
2 W
necessary to minimize ICC
Ud
Lower ICC achievable, when using SM
d > 1: CC 1 = 2 I W (1 c )U
1 2 2
with bipolar voltage (e.g. Full-Bridge)
CM
55
6. Optimized operation for drives
Basics of control for drives
(Kolb, J.; Kammerer, F.; Braun, M.: A novel control scheme for low frequency operation of the Modular Multilevel Converter)
Separate control of currents and arm energies with a cascaded control scheme:
New definition for one phase equivalent circuit:
iw/2
ip
DC-current for one phase:
Ud
Mp LA

I d = I d + d sin (0t )
2

uW up
ui
L R Cu
S
iW Common mode voltage for one phase:
Id
in
un U CM = U CM + CM sin ( 0t )

Ud
2
Mn LA 0: sinusoidal common mode frequency
iw/2

56
Equivalent circuit for one phase
6. Optimized operation for drives
Basics of current control
(Kolb, J.; Kammerer, F.; Braun, M.: A novel control scheme for low frequency operation of the Modular Multilevel Converter)
iw 1
ip = Id + Id = (i p + in )
iw/2 2 2
ip i
Ud LA
in = I d w iw = i p in
Mp 2
2

uW up
ui Ud di p
L S R Cu Mp: =L + u p + uw
iW 2 dt
Id
in
un Ud di
Mn: = L n + un uw
2 dt
Ud
2
Mn LA

iw/2

57
Equivalent circuit for one phase
6. Optimized operation for drives
Basics of current control
(Kolb, J.; Kammerer, F.; Braun, M.: A novel control scheme for low frequency operation of the Modular Multilevel Converter)

diw 1
iw/2 = (u n u p 2 (RCu iw + ui ))
ip dt 2 La + Ls
Ud
Mp LA
2 Controlled using difference of arm voltages
uW up
ui did 1
L S R Cu
iW
= (U d (u n + u p ))
Id dt 2 Ls
in
Controlled using sum of arm voltages
un

Ud
2
Mn LA

Decoupled Current Control achievable


iw/2

58
Equivalent circuit for one phase
6. Optimized operation for drives
Basics of energy control
Instantaneous power in the arms:
Pp / n = u p / n i p / n
iw/2
ip
Ud
Mp LA
2
P = Pp Pn Power difference between the arms
uW up 1
ui
L S R Cu P = (Pp + Pn ) Average Power of one phase
iW 2
Id
in
Common mode () and differential mode ()
un
components
Ud
2
Mn LA P , p = P ,n
iw/2
P , p = P ,n

59
Equivalent circuit for one phase
6. Optimized operation for drives
Basics of energy control
Separated components:
1 1 1 1 1
upper + Ud I d Uw I w + Ud I w U wId CM d U CM I d UCM I w
iw/2 2 2 4 2 2
ip 1 1 1 1 1
lower + Ud I d Uw I w Ud I w +UwId + CMd + U CM I d UCM I w
2 2 4 2 2
Ud
Mp LA
2
Active power Pulsating power Active power
caused by DC- for
uW input output additional
up components balancing
ui
L S R Cu
iW Common mode components
Id
in Differential mode components
un
1 !
P = (Pp + Pn )= 0 Sum of arms power
Ud
Mn LA
2 (Averaged = 0)
2
!
iw/2
P = Pp Pn = 0 Difference of arms power
(Averaged = 0)

60
Equivalent circuit for one phase
6. Optimized operation for drives
Basics of energy control
Necessary DC-components:
1
iw/2 Id = (U w I w + U CM I w )
ip Ud
Ud
Mp LA 1 1
2 d = U d I w 2U w I d 2U CM I d
uW
CM 2
up
ui
L S R Cu
iW
Id Side condition:
in 3 !
un
y =1
dy =0 No ripple current in DC-side

Ud
Mn LA
2
1 Uw
U CM (0t ) = cos(30t )
iw/2 4 cos

61
Equivalent circuit for one phase
6. Optimized operation for drives
Basics of energy control
(Kolb, J.; Kammerer, F.; Braun, M.: A novel control scheme for low frequency operation of the Modular Multilevel Converter)

Energy and balance control

feedforward
control

Uc
Current control up*
- d* - -
Energy control 1/2 uw0* MMC
C
- -
0 id Ud
sin(x t)

d*
- un*
C

Balance control
measured/filtered values
feedforward desired values (*)
control given parameters
Evaluation of measured values

ip

iw id
-
1/2
in
uCp
UC UC
C 1/2 C
uCn -
62
6. Modulation methods

Control layer between energy control and submodule control


Creates switching signals to synthesize the given arm voltages

Modulation method has impact on:

Voltage harmonics on AC-side


Current harmonics in the arms
Current and voltage ripple on the DC-side
Switching frequency

63
6. Modulation methods
Carrier-based modulation methods

Comparing reference signal against carrier signal

1 1 1 1

0 0 0 0

-1 -1 -1 -1
0 0.01 0.02 0 0.01 0.02 0 0.01 0.02 0 0.01 0.02
Time [s] Time [s] Time [s] Time [s]
4 4 4 4

2 2 2 2

0 0 0 0
0 0.01 0.02 0 0.01 0.02 0 0.01 0.02 0 0.01 0.02
Time [s] Time [s] Time [s] Time [s]

a) PSC b) PDC c) PODC d) APODC

Various compromises between switching frequency and harmonics achievable


64
6. Modulation methods
Nearest Level Modulation (NLM)

USM
rounding

Uarm,ref

Low switching frequency, but higher harmonics


Suitable for high voltage applications
Number of voltage levels (in line-to-line) depending on rounding function

65
6. Modulation methods
Averaging NLM
(Rohner, S.; Bernet, S.; Hiller, M.; Sommer, R.: Modulation, losses and semiconductor requirements of modular multilevel converters)

4 UC 4 UC

3 UC 3 UC

Uz,ref
Uz,ref
2 UC 2 UC Uz,AVG
Uz,AVG
Uz,PWM

1 UC 1 UC

TPWM

0 UC 0 UC
0 1 2 3 4 5 0 1 2 3 4 5

Necessary number of submodules in on-state, plus


one submodule chosen for PWM
The SM chosen for PWM is interchanged after each pulse period

66
6. Modulation methods
Tolerance Band
(Hassanpoor, A.; ngquist, L.; Norrga, S.; Ilves, K.; Nee, H.-P.: Tolerance Band Modulation Methods for Modular Multilevel Converters)

Suitable for few number of SMs


Continuously monitoring the
divergence (error of flux):
diff = act ref = (vact (t ) v ref (t ) )dt

diff < : insert voltage level


diff > : remove voltage level

Good compromise between


switching frequency and
harmonics possible

67
6. Submodule capacitor voltage balancing
Control layer below arms energy control and modulation

Distributing the voltage and workload equally between all submodules


of one arm

Equalized average energies for all submodules of converter


Equalized max. voltages for all submodules of converter

Aims:

Low switching frequency


Minimized voltage differences

68
6. Submodule capacitor voltage balancing
Basic capacitor balancing
(Marquardt, R.; Lesnicar, A.; Hildinger, J.: Modulares Strom-richterkonzept fr Netzkupplungsanwendung bei hohen Spannungen)
Measuring and sorting-method in each arm
iz > 0 (charging): SM with lowest voltages are selected to be inserted
iz < 0 (discharging): SM with highest voltages are selected to be inserted
Example:
Positive arm Negative arm
iz,p 0
UC3 = 1010V UC6 = 960V
SM1 UC1 = 1040V UC5 = 1020V UC10 = 970V
SM2 UC2 = 1050V UC4 = 1030V UC8 = 980V
SM3 UC3 = 1010V UC1 = 1040V UC7 = 990V
SM4 UC4 = 1030V
UC2 = 1050V UC9 = 1000V
SM5 UC5 = 1020V
iw
Uw

SM6 UC6 = 960V

SM7

SM8
UC7 = 990V

UC8 = 980V
Asynchronous sorting and selecting time period
SM9 UC9 = 1000V (or synchronous with PWM) can be chosen
SM10 UC10 = 970V

iz,n < 0

(Rohner, S.; Bernet, S.; Hiller, M.; Sommer, R.: Modulation, losses and 69
semiconductor requirements of modular multilevel converters)
6. Submodule capacitor voltage balancing
Predictive capacitor-voltage balancing
(Qin, J.; Saeedifard, M.: Reduced Switching-Frequency Voltage-Balancing Strategies for Modular Multilevel HVDC Converters)

Calculate UC(t + Tsort) Linear approximation of predicted voltage level


(arm current ia measured or estimated)
Calculate UC ia (t )
U C (t + Tsort ) = U C (t ) + Tsort
C

Determine UC,max Selection of submodules with lowest difference

Yes No U C = U C (t + Tsort ) U C ,ref


UC,max >

Reduced switching frequency


Conventional Predictive
sorting sorting Additional tolerance band is advisable to
algorithm algorithm
prevent larger errors

70
6. Submodule capacitor voltage balancing
Advanced predictive capacitor-voltage balancing
(Ilves, K.; et al.: Predictive Sorting Algorithm for Modular Multilevel Converters Minimizing the Spread in the Submodule Capacitor Voltages)

Aim:
Equal capacitor voltages in one arm at maximum voltage

Conditions:
Knowledge of arm current/charge expected capacitor voltage
Knowledge of pulse pattern in advance target capacitor voltage

Pulse pattern must be cycled for even power loss distribution between SM

Switching frequency below 2 times the fundamental frequency is enabled

Reduction of max. voltage of capacitors becomes possible

71
6. Submodule capacitor voltage balancing
Fundamental frequency modulation
(Ilves, K.; et al.: A New Modulation Method for the Modular Multilevel Converter Allowing Fundamental Switching Frequency)

Open loop approach with fundamental switching frequency


(requires knowledge of pulse pattern in advance and arm current)
Balancing of the capacitor voltages over several periods, solely

Higher voltage ripple must be accepted

72
7. Applications and Projects
High Voltage Direct Current (HVDC) - Transmission

Stabilization of Improved exploitation


AC-Grids of Renewable Sources

Power Electronics
for HVDC-Grid

Availability and Long


Fire Wall
usefulness of Distance
Function
Energy Storage Transmission

73
7. HVDC-Systems
Future Requirements for High Power Electronics

Minimized power loss and cooling equipment

Suitability for Multiterminal-Grid and Overhead-Lines

Extremely high Availability and redundant operation

Increase of transmission power up to LCC-Level

74
7. HVDC-Systems

Main future requirements for HVDC

Suitability for extension to Multiterminal-HVDC

Suitability for Overhead-Lines (OHL) and/or Mix of Cables and OHL

Fault clearing for DC failures very fast ( < 3ms)


(in order not to disturb the AC-Grids, seriously)

Electronic DC-Current limitation

Very high efficiency, DC-Voltage and power enabled


(Reference: LCC)

75
7. HVDC-Systems
Converter Configurations
Symmetrical Monopole:
P
Ud/2 Limited Power
M2C M2C M2C Tight restrictions for
Ud/2
N operation after line faults

Bipole with Metallic-Return (MR)


P P

M2C M2C M2C Ud/2 Highest Power Level possible


MR Flexible options for operation
Z Z Z after line faults
M2C M2C M2C Ud/2
Different grounding concepts are
N N
possible

76
7. HVDC-Systems: Multiterminal

Converter 1 Example: VD = 300 kV


Id1
~ Vd
If1
DC-fault between Terminals A and B:
M2C
B A Id1 = -1kA (converter 1 operating as rectifier)
If23 Id2 = -0.5kA (converter 2 operating as rectifier)
Converter 2 Id3 = 1.5kA (converter 3 operating as inverter)
P2 Id2
~
N2
M2C
DC Bus

3 converters (M2C with C-DSM)


operating at common DC Bus
Converter 3
P3 Id3
~ Fault current management by
N3 electronic switching of the
M2C
converters
77
7. HVDC-Systems
Converter 2
Converter 1 2

Iw2 [kA]
0

-2
2
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
Iw1 [kA]

t[ms]

1
0
0

Id2 [kA]
-1
-2
-2

0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -3


0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
t[ms] t[ms]

1 Converter 3
2

Iw3 [kA]
Id1 [kA]

-1 -2
prospective DC-current
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
-2 t[ms]

-3 1
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2

Id3 [kA]
t[ms] 0

-1
Blocking command for the converters
-2
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
t[ms]

78
7. HVDC-Systems

Resulting DC-side fault current: DC-Bus current:


4 1

0
Converter 1

Id1 [kA]
3.5
-1
prospective fault current
-2
3
-3
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
IFLT=If1 +If23 [kA]

2.5 t[ms]
1

0
Converter 2
2

Id2 [kA]
-1

1.5 -2

-3
1 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
t[ms]
2
0.5
1
Converter 3

Id3 [kA]
0
0
0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 -1
t[ms]
-2
Blocking command for the converters 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2
t[ms]

Downtime of DC-Grids below 1ms, No AC-tripping


In comparison: With AC-tripping >> 100ms 79
7. HVDC-Systems
Dynamic Control capabilities of MMC
Fast reactive power reversal of MMC (Example with typical time scale)
The absence of
passive AC filters
enables good
dynamic behaviour

Reactive current is
shifted by 180 in
extremely fast and
smooth manner

100% reactive
power reversal in
less than
5ms possible
80
7. HVDC-Systems Research projects

Examples:

USA: GENI-Project

S.-Korea: Hyosung/Jeju-Island

China:
- 200kV DC-Breaker
- Multiterminal HVDC
(Zhoushan)

Japan: SiC (FIRST-Program)


America Europe Asia 20kV-SiC-Power
semiconductors

81
7. Applications and Projects
Flexible AC Transmission System (FACTS)

Static VAR Compensator (SVC)


(Pereira, M; Retzmann, D.; Lottes, J.; et al.: SVC PLUS: An MMC STATCOM for Network and Grid Access Applications)
Power factor compensation
Improvement of voltage stability

Unified Power Flow Controller (UPFC)


(Guying, Z.; Daozhuo, J; Xiarang, L.: Modular Multilevel Converter for Unified Power Flow Controller Application)
Control of active and reactive power flow in transmission line

Requirements
No/Small AC-filters
Low Switching frequency
High reliability and high efficiency

Modular Multilevel Converter 82


7. Applications and Projects
Application of MMC for Railway
(Winkelnkemper, M.; Korn, A.; Steimer, P.: A Modular Direct Converter for transformerless Rail Interties)
Interconnection of European 15kV/16.7Hz with 50Hz industrial grid
No 16.7Hz transformer and 2nd harmonic DC-filter

Requirements
Reactive power compensation
Low maintenance and High reliability
Very high efficiency

Additional challenges
Large transient overvoltages from grid ngquist, L.; Haider, A.; Nee, H.-P.: Open-loop Approach to
Heavy overloads Control a Modular Multilevel Frequency Converter

Modular Multilevel Converter

83
7. Applications and Projects
Application of MMC for Drives

State of the art using Two-Level-Converters:


Essential drawbacks:
DC-Bus IGBT-inverter EMI-Filter No useful scalability
(adaptation to different power
3N To levels and DC-Bus-Voltages)
Motor 1
3M rot1

enaC
b hC
rately ekophC
D
/ epr-C
tliIF
M
E IG -eT
IvrntB

EMI-Filter
No safe failure behaviour (High
EMI-Filter Line-Side-
Converter DC-surge currents, high risk of
To
Motor 2 component damage)
No capability for redundant
operation after failures
High expense for passive filters
Two level IGBT-Converter
Passive EMI-filters and Line-Side-Converter
Large DC-capacitors distributed at DC-Bus
84
7. Applications and Projects
Application of MMC for Drives
Advantages:
P SM SM SM
SM SM SM Minimized machine losses
DC-Bus:
No Capacitors! SM SM SM Minimized accoustic noise
SM SM SM
i1
i2
V12 V23 Parasitic bearing currents
Motor V31
Vd i3
eliminated
No Filters! SM
SM SM
SM
Long motor cables enabled
SM SM
SM SM SM Redundant operation after failures
SM SM SM of submodules or failures at DC-Bus
N is enabled

85
7. Applications and Projects
Field of application for Large Drives

Marine propulsions
Shaft generators
Steel-mill
Generators in hydro power
Generators in wind power
Test bench drives

86
7. Applications and Projects
(Offshore) Wind Power
(Liu, H.; Ma, K.; Loh, P. C.; Blaabjerg, F.: Lifetime estimation of MMC for Offshore Wind Power HVDC Application)

Low maintenance, High reliability


Harsh operating conditions
Limited space in nacelle
Minimized filters

In future: - Higher power (P > 6MW)


- Gearless operation

Smirnova, L.; Pyrhonen, J.; Ma, K.; Blaabjerg, F.: Modular


Multilevel Converter Solutions with few Sub-Modules for Wind
Power Application

87
7. Applications and Projects
Battery energy storage system (BESS)
(Schroeder, M.; Henninger, S.; Jaeger, J.; et al.: Integration of Batteries into a Modular Multilevel Converter)

Battery integrated into submodules


Battery charging, discharging and
balancing possible

Main advantages
Low voltage rating of the components
High reliability due to redundancy

88
8. Outlook and Future Trends
Future requirements

Higher Power
Improvement of conventional semiconductors
Wide bandgap semiconductors (SiC, GaN)
Reduced capacitor volume
New topologies
Improvement of capacitor technology
Current-Limiting capabilities

89
8. Development trend of semiconductors

HV-IGBT for MMC (VSC)

Typ. Data: 4,5 kV / 2,4 kA


6,5 kV / 1,5 kA

Development-Trend:

Lower differential on-state-resistance

Improved Field-Stop Design


(asymmentrical blocking)

Reverse conducting chips

90
8. Development trend of semiconductors

Package improvements

Half-Bridge Configuration
Modular Approach
Low inductive Package design
Higher power density

(Schtze, T.; Borghoff, G.; Wissen, M.; Hhn, A.: Boost Your
System! Defining the Future of IGBT High-Power Modules)

91
8. Development trend of semiconductors
Reverse Conducting IGBT (RC)
(Werber, D.; Pfirsch, F.; Komarnitskyy, V.; et al.: 6.5kV RCDC For increased Power Density in IGBT-Modules)

Improvements

Increased current density


Improvement of Rth/Zth of IGBT and
diode
Reduced temperature excursion
Higher life time

(Infineon: RCDC: Reverse Conducting IGBT with Diode Control)

92
8. Development trend of semiconductors
Silicon Carbide (RC)
(Heer, D.; Bayerer, R.; Domes, D.: Systemdesign fr SiC-JFET-Halbbrcken-Module)

Characteristics

Low RDS,on, Low switching losses


Reverse conducting (RC)
Robust current limiting

Present status:
Only small chip area available for SiC
(max 5 x 5mm)
1.2kV and 1.7kV in commercial production
JFETs (normally on) best qualified

93
8. Development trend of semiconductors

Comparison of typical
iF On-State-Characteristics
Si-Thyristor
6kA Si-IGCT
Thyristor-Structures enable the
Si-IGBT lowest differential On-State-Resistance
4kA
SiC-FET
(Trend) IGBT-Development intends to reduce
2kA this difference

Wide Band-Gap-Semiconductors
-1V 1V 2V 3V VT offer the potential for:

Elimination of the threshold


voltage ( 1V)

Essential reduction of differential


On-State-Resistance
94
8. Development trend of MMC
Hot-Swappable Submodules
(Cottet, D.; et al.: Integration Technologies for a Fully Modular and How-Swappable MV Multi-Level Concept Converter)

Replace defective submodules without (significant) disturbance of


converter operation
95
8. Development trend of MMC

Open Space Optical IR communication


(instead of copper and optical fibre cables)
Sensorless Tjunction Measurement System
Integrated, self powered measurement systems
Wireless, auxiliary, power supply
Extending the advantages of redundant operation

96

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