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by MJ1000/D
SEMICONDUCTOR TECHNICAL DATA

 



  


  *Motorola Preferred Device

. . . for use as output devices in complementary general purpose amplifier applica-

10 AMPERE
tions.
DARLINGTON
High DC Current Gain hFE = 6000 (Typ) @ IC = 3.0 Adc POWER TRANSISTORS
Monolithic Construction with Builtin BaseEmitter Shunt Resistors COMPLEMENTARY
SILICON
60 80 VOLTS
90 WATTS

CASE 107

TO204AA

(TO3)

MAXIMUM RATINGS

Rating Symbol MJ1000 MJ1001 Unit

CollectorEmitter Voltage VCEO 60 80 Vdc

CollectorBase Voltage VCB 60 80 Vdc

EmitterBase Voltage VEB 5.0 Vdc

Collector Current IC 10 Adc

Base Current IB 0.1 Adc

Total Device Dissipation @ TC = 25_C PD 90 Watts

Derate above 25_C

0.515 W/_C

Operating and Storage Junction Temperature Range TJ, Tstg 55 to + 200 _C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case RJC 1.94 _C/W

PNP COLLECTOR NPN COLLECTOR

MJ900 MJ1000
MJ901 MJ1001

BASE BASE

4.0 k 60 4.0 k 60

EMITTER EMITTER

Figure 1. Darlington Circuit Schematic

Preferred devices are Motorola recommended choices for future use and best overall value.

REV 7

Motorola, Inc. 1995 1

Motorola Bipolar Power Transistor Device Data


 

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS
CollectorEmitter Breakdown Voltage(1) (IC = 100 mAdc, IB = 0) MJ1000 V(BR)CEO 60 Vdc

MJ1001 80

Collector Emitter Leakage Current ICER mAdc

(VCB = 60 Vdc, RBE = 1.0k ohm) MJ1000 1.0

(VCB = 80 Vdc, RBE = 1.0k ohm) MJ1001 1.0

(VCB = 60 Vdc, RBE = 1.0k ohm, TC = 150_C) MJ1000 5.0

(VCB = 80 Vdc, RBE = 1.0k ohm, TC = 150_C) MJ1001 5.0

Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO 2.0 mAdc

Collector Emitter Leakage Current (VCE = 30 Vdc, IB = 0) MJ1000 ICEO 500 Adc

(VCE = 40 Vdc, IB = 0) MJ1001 500

ON CHARACTERISTICS

DC Current Gain(1) (IC = 3.0 Adc, VCE = 3.0 Vdc) hFE 1000
(IC = 4.0 Adc, VCE = 3.0 Vdc) 750

Collector Emitter Saturation Voltage(1) (IC = 30 Adc, IB = 12 mAdc) VCE(sat) 2.0 Vdc
(IC = 8.0 Adc, IB = 40 mAdc) 4.0

v v
Base Emitter Voltage(1) (IC = 3.0 Adc, VCE = 3.0 Vdc)
(1)Pulse Test: Pulse Width 300 s, Duty Cycle 2.0%.
VBE(on) 2.5 Vdc

50,000 3000
2000
20,000 hfe , SMALLSIGNAL CURRENT GAIN
10,000 TJ = 150C 1000 TC = 25C
hFE, DC CURRENT GAIN

5000
500
2000 25C
300
1000 200 VCE = 3.0 Vdc
IC = 3.0 Adc
500
55C 100
200 VCE = 3.0 V
100 50
50 30
0.01 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 103 104 105 106
IC, COLLECTOR CURRENT (AMP) f, FREQUENCY (Hz)
Figure 2. DC Current Gain Figure 3. SmallSignal Current Gain
3.5 10
7.0 TJ = 200C
IC, COLLECTOR CURRENT (AMPS)

3.0 TJ = 25C 5.0

2.5 3.0
V, VOLTAGE (VOLTS)

2.0
2.0 SECONDARY BREAKDOWN
VBE(sat) @ IC/IB = 250 1.0 LIMITATION
1.5 0.7 THERMAL LIMITATION @ TC = 25C
0.5 BONDING WIRE LIMITATION
1.0 VBE @ VCE = 3.0 V
0.3
MJ1000
0.5 VCE(sat) @ IC/IB = 250 0.2
MJ1001
0 0.1
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100
IC, COLLECTOR CURRENT (AMP) VCE, COLLECTOREMITTER VOLTAGE (VOLTS)
Figure 4. On Voltages Figure 5. DC Safe Operating Area
There we two limitations on the power handling ability of a dissipation than the curves indicate.
transistor: average junction temperature and secondary At high case temperatures, thermal limitations will reduce
breakdown. Safe operating area curves indicate IC VCE lim- the power that can be handled to values less than the limita-
its of the transistor that must be observed for reliable opera- tions imposed by secondary breakdown.
tion; e.g., the transistor must not be subjected to greater

2 Motorola Bipolar Power Transistor Device Data

  
PACKAGE DIMENSIONS

A
N NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
C Y14.5M, 1982.
T SEATING 2. CONTROLLING DIMENSION: INCH.
PLANE 3. ALL RULES AND NOTES ASSOCIATED WITH
E REFERENCED TO204AA OUTLINE SHALL APPLY.
D 2 PL K
INCHES MILLIMETERS
0.13 (0.005) M T Q M Y M DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
U B 1.050 26.67
L Y
V C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
2 E 0.055 0.070 1.40 1.77
G B G 0.430 BSC 10.92 BSC
H 1 H 0.215 BSC 5.46 BSC
K 0.440 0.480 11.18 12.19
L 0.665 BSC 16.89 BSC
Q N 0.830 21.08
Q 0.151 0.165 3.84 4.19
0.13 (0.005) M T Y M U 1.187 BSC 30.15 BSC
V 0.131 0.188 3.33 4.77

STYLE 1:
PIN 1. BASE
2. EMITTER
CASE: COLLECTOR

CASE 107
TO204AA (TO3)
ISSUE Z

Motorola Bipolar Power Transistor Device Data 3

 

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4 Motorola Bipolar Power Transistor Device Data

*MJ1000/D*
MJ1000/D