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Certificate Number:
U8V 14 05 54214 028
device at high overcurrent conditions. The terminals of the
PFF PSF
Leadform Leadform Continued on the next page
5V
1
4 VCC
Application 1: the ACS770 outputs an analog IP+ CBYP
signal, VOUT, that varies linearly with the ACS770 0.1 F
bidirectional AC or DC primary sampled cur- 2
rent, IP, within the range specified. RF and IP GND
CF are for optimal noise management, with CF
values that depend on the application. 5
IP 3
VIOUT VOUT
RF
Typical Application
SELECTION GUIDE
Package Primary Sampled Sensitivity
Sens (Typ.) Current TOP
Part Number [1] Current, IP Packing [2]
Terminals Signal Pins Directionality (C)
(A) (mV/A)
ACS770LCB-050B-PFF-T Formed Formed 50 40. Bidirectional
ACS770LCB-050U-PFF-T Formed Formed 50 80. Unidirectional
ACS770LCB-100B-PFF-T Formed Formed 100 20. Bidirectional 40 to 150
ACS770LCB-100U-PFF-T Formed Formed 100 40. Unidirectional
ACS770LCB-100U-PSF-T [3] Straight Formed 100 40. Unidirectional
ACS770KCB-150B-PFF-T Formed Formed 150 13.3 Bidirectional
34 pieces
ACS770KCB-150B-PSF-T Straight Formed 150 13.3 Bidirectional
40 to 125 per tube
ACS770KCB-150U-PFF-T Formed Formed 150 26.7 Unidirectional
ACS770KCB-150U-PSF-T Straight Formed 150 26.7 Unidirectional
ACS770ECB-200B-PFF-T Formed Formed 200 10. Bidirectional
ACS770ECB-200B-PSF-T Straight Formed 200 10. Bidirectional
40 to 85
ACS770ECB-200U-PFF-T Formed Formed 200 20. Unidirectional
ACS770ECB-200U-PSF-T Straight Formed 200 20. Unidirectional
SPECIFICATIONS
ISOLATION CHARACTERISTICS
Characteristic Symbol Notes Rating Unit
Agency type-tested for 60 seconds per
Dielectric Strength Test Voltage [1] VISO 4800 VAC
UL standard 60950-1, 2nd Edition
For basic (single) isolation per UL standard 60950-1, 2nd 990 VDC or Vpk
Working Voltage for Basic Isolation VWFSI
Edition 700 Vrms
For reinforced (double) isolation per UL standard 60950- 636 VDC or Vpk
Working Voltage for Reinforced Isolation VWFRI
1, 2nd Edition 450 Vrms
[1] 60-second testing is only done during the UL certification process. In production, Allegro conducts 1-second isolation testing according to UL 60950-1, 2nd Edition.
[3] Test was done with Allegro evaluation board. The maximum allowed current is limited by TJ(max) only.
[4] For more overcurrent profiles, please see FAQ on the Allegro website, www.allegromicro.com.
V+ IP+
VCC
To all subcircuits
Programming
Control
C BYP
Sensitivity Control Offset Control
Dynamic Offset
Cancellation
VIOUT
Signal Recovery
CL
IP
GND
COMMON OPERATING CHARACTERISTICS: Valid at TOP = 40C to 150C, CBYP = 0.1F, and VCC = 5 V,
unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Supply Voltage VCC 4.5 5.0 5.5 V
Supply Current ICC Output open 10 15 mA
Supply Zener Voltage VZ TA = 25C, ICC = 30 mA 6.5 7.5 V
Power-On Delay [1][2] tPOD TA = 25C, CBYP = open 90 s
Temperature Compensation
tTC TA = 25C, CBYP = open 90 s
Power-On Time [1]
Undervoltage Lockout (UVLO) VUVLOH TA = 25C, VCC rising 3.8 V
Threshold [1] VUVLOL TA = 25C, VCC falling 3 V
tUVLOE TA = 25C, CBYP = open, VCC Fall Time (5 V to 3 V) = 1 s 75 s
UVLO Enable/Disable Delay
Time [1][2] TA = 25C, CBYP = Open,
tUVLOD 14 s
VCC Recover Time (3 V to 5 V) = 1 s
VPORH TA = 25C, VCC rising 2.9 V
Power-On Reset Voltage [1]
VPORL TA = 25C, VCC falling 2.7 V
IP step = 60% of IP+, 10% to 90% rise time, TA = 25C,
Rise Time [1][2] tr 4.1 s
CL = 0.47 nF
IP step = 60% of IP+, 20% input to 20% output, TA = 25C,
Propagation Delay Time [1][2] tPROP 2.4 s
CL = 0.47 nF
IP step = 60% of IP+, 80% input to 80% output, TA = 25C,
Response Time [1][2] tRESPONSE 4.6 s
COUT = 0.47 nF
Internal Bandwidth BWi 3 dB; TA = 25C, CL = 0.47 nF 120 kHz
Output Load Resistance RL VIOUT to GND 4.7 k
Output Load Capacitance CL VIOUT to GND 10 nF
Primary Conductor Resistance RPRIMARY TA = 25C 100
VIOUT(QBI) Bidirectional variant, IP = 0 A, TA = 25C VCC/2 V
Quiescent Output Voltage [1]
VIOUT(QUNI) Unidirectional variant, IP = 0 A, TA = 25C 0.5 V
Ratiometry [1] VRAT VCC = 4.5 to 5.5 V 100 %
X050B PERFORMANCE CHARACTERISTICS [1]: TOP = 40C to 150C, CBYP = 0.1 F, VCC= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP 50 50 A
SensTA Measured using full-scale IP, TA = 25C 39.04 40 40.96 mV/A
Sensitivity [2] Sens(TOP)HT Measured using full-scale IP, TOP = 25C to 150C 39.04 40 40.96 mV/A
Sens(TOP)LT Measured using full-scale IP, TOP = 40C to 25C 38.6 40 41.4 mV/A
TOP = 40C to 150C, shift after AEC-Q100 grade 0
Sensitivity Drift Over Lifetime [3] SensLIFE 0.72 0.24 0.72 mV/A
qualificationtesting
Noise [4] VNOISE TA= 25C, 10 nF on VIOUT pin to GND 10 mV
Nonlinearity ELIN Measured using full-scale and half-scale IP, 1 1 %
VOE(TA) IP = 0 A, TA = 25C 10 4 10 mV
Electrical Offset Voltage [5][6] VOE(TOP)HT IP = 0 A, TOP = 25C to 150C 10 6 10 mV
VOE(TOP)LT IP = 0 A, TOP = 40C to 25C 20 6 20 mV
Electrical Offset Voltage Drift IP = 0 A, TOP = 40C to 150C, shift after AEC-Q100 grade 0
VOE(LIFE) 5 2 5 mV
Over Lifetime [3] qualification testing
Magnetic Offset Error IERROM IP = 0 A, TA = 25C, after excursion of 50 A 120 300 mA
ETOT(TA) Measured using full-scale IP, TA = 25C 2.4 0.5 2.4 %
Total Output Error [7] ETOT(HT) Measured using full-scale IP, TOP = 25C to 150C 2.4 1.5 2.4 %
ETOT(LT) Measured using full-scale IP, TOP = 40C to 25C 3.5 2 3.5 %
Total Output Error Drift Over TOP = 40C to 150C, shift after AEC-Q100 grade 0
ETOT(LIFE) 1.9 0.6 1.9 %
Lifetime [3] qualificationtesting
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] This parameter may drift a maximum of SensLIFE over lifetime.
[3] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed.
Drift is a function of customer application conditions. Contact Allegro MicroSystems for further information.
[4] 3 sigma noise voltage.
[5] Drift is referred to ideal V
IOUT(QBI) = 2.5 V.
[6] This parameter may drift a maximum of V
OE(LIFE) over lifetime.
[7] This parameter may drift a maximum of E
TOT(LIFE) over lifetime.
X050U PERFORMANCE CHARACTERISTICS [1]: TOP = 40C to 150C, CBYP = 0.1 F, VCC= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP 0 50 A
SensTA Measured using full-scale IP, TA = 25C 78.08 80 81.92 mV/A
Sensitivity [2] Sens(TOP)HT Measured using full-scale IP, TOP = 25C to 150C 78.08 80 81.92 mV/A
Sens(TOP)LT Measured using full-scale IP, TOP = 40C to 25C 77.2 80 82.8 mV/A
TOP = 40C to 150C, shift after AEC-Q100 grade 0
Sensitivity Drift Over Lifetime [3] SensLIFE 1.44 0.48 1.44 mV/A
qualificationtesting
Noise [4] VNOISE TA= 25C, 10 nF on VIOUT pin to GND 20 mV
Nonlinearity ELIN Measured using full-scale and half-scale IP 1 1 %
VOE(TA) IP = 0 A, TA = 25C 10 4 10 mV
Electrical Offset Voltage [5][6] VOE(TOP)HT IP = 0 A, TOP = 25C to 150C 10 6 10 mV
VOE(TOP)LT IP = 0 A, TOP = 40C to 25C 20 6 20 mV
Electrical Offset Voltage Drift IP = 0 A, TOP = 40C to 150C, shift after AEC-Q100 grade 0
VOE(LIFE) 5 2 5 mV
Over Lifetime [3] qualification testing
Magnetic Offset Error IERROM IP = 0 A, TA = 25C, after excursion of 50 A 120 300 mA
ETOT(TA) Measured using full-scale IP, TA = 25C 2.4 0.5 2.4 %
Total Output Error [7] ETOT(HT) Measured using full-scale IP, TOP = 25C to 150C 2.4 1.5 2.4 %
ETOT(LT) Measured using full-scale IP, TOP = 40C to 25C 3.5 2 3.5 %
Total Output Error Drift Over TOP = 40C to 150C, shift after AEC-Q100 grade 0
ETOT(LIFE) 1.9 0.6 1.9 %
Lifetime [3] qualificationtesting
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] This parameter may drift a maximum of SensLIFE over lifetime.
[3] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed.
Drift is a function of customer application conditions. Contact Allegro MicroSystems for further information.
[4] 3 sigma noise voltage.
[5] Drift is referred to ideal V
IOUT(QBI) = 0.5 V.
[6] This parameter may drift a maximum of V
OE(LIFE) over lifetime.
[7] This parameter may drift a maximum of E
TOT(LIFE) over lifetime.
X100B PERFORMANCE CHARACTERISTICS [1]: TOP = 40C to 150C, CBYP = 0.1 F, VCC= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP 100 100 A
SensTA Measured using full-scale IP, TA = 25C 19.52 20 20.48 mV/A
Sensitivity [2] Sens(TOP)HT Measured using full-scale IP, TOP = 25C to 150C 19.52 20 20.48 mV/A
Sens(TOP)LT Measured using full-scale IP, TOP = 40C to 25C 19.3 20 20.7 mV/A
TOP = 40C to 150C, shift after AEC-Q100 grade 0
Sensitivity Drift Over Lifetime [3] SensLIFE 0.36 0.12 0.36 mV/A
qualificationtesting
Noise [4] VNOISE TA= 25C, 10 nF on VIOUT pin to GND 6 mV
Nonlinearity ELIN Measured using full-scale and half-scale IP 1 1 %
VOE(TA) IP = 0 A, TA = 25C 10 4 10 mV
Electrical Offset Voltage [5][6] VOE(TOP)HT IP = 0 A, TOP = 25C to 150C 10 6 10 mV
VOE(TOP)LT IP = 0 A, TOP = 40C to 25C 20 6 20 mV
Electrical Offset Voltage Drift IP = 0 A, TOP = 40C to 150C, shift after AEC-Q100 grade 0
VOE(LIFE) 5 2 5 mV
Over Lifetime [3] qualification testing
Magnetic Offset Error IERROM IP = 0 A, TA = 25C, after excursion of 100 A 170 400 mA
ETOT(TA) Measured using full-scale IP, TA = 25C 2.4 0.5 2.4 %
Total Output Error [7] ETOT(HT) Measured using full-scale IP, TOP = 25C to 150C 2.4 1.5 2.4 %
ETOT(LT) Measured using full-scale IP, TOP = 40C to 25C 3.5 2 3.5 %
Total Output Error Drift Over TOP = 40C to 150C, shift after AEC-Q100 grade 0
ETOT(LIFE) 1.9 0.6 1.9 %
Lifetime [3] qualificationtesting
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] This parameter may drift a maximum of SensLIFE over lifetime.
[3] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed.
Drift is a function of customer application conditions. Contact Allegro MicroSystems for further information.
[4] 3 sigma noise voltage.
[5] Drift is referred to ideal V
IOUT(QBI) = 2.5 V.
[6] This parameter may drift a maximum of V
OE(LIFE) over lifetime.
[7] This parameter may drift a maximum of E
TOT(LIFE) over lifetime.
X100U PERFORMANCE CHARACTERISTICS [1]: TOP = 40C to 150C, CBYP = 0.1 F, VCC= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP 0 100 A
SensTA Measured using full-scale IP, TA = 25C 39.04 40 40.96 mV/A
Sensitivity [2] Sens(TOP)HT Measured using full-scale IP, TOP = 25C to 150C 39.04 40 40.96 mV/A
Sens(TOP)LT Measured using full-scale IP, TOP = 40C to 25C 38.6 40 41.4 mV/A
TOP = 40C to 150C, shift after AEC-Q100 grade 0
Sensitivity Drift Over Lifetime [3] SensLIFE 0.72 0.24 0.72 mV/A
qualificationtesting
Noise [4] VNOISE TA= 25C, 10 nF on VIOUT pin to GND 12 mV
Nonlinearity ELIN Measured using full-scale and half-scale IP 1 1 %
VOE(TA) IP = 0 A, TA = 25C 10 4 10 mV
Electrical Offset Voltage [5][6] VOE(TOP)HT IP = 0 A, TOP = 25C to 150C 10 6 10 mV
VOE(TOP)LT IP = 0 A, TOP = 40C to 25C 20 6 20 mV
Electrical Offset Voltage Drift IP = 0 A, TOP = 40C to 150C, shift after AEC-Q100 grade 0
VOE(LIFE) 5 2 5 mV
Over Lifetime [3] qualification testing
Magnetic Offset Error IERROM IP = 0 A, TA = 25C, after excursion of 100 A 170 400 mA
ETOT(TA) Measured using full-scale IP, TA = 25C 2.4 0.5 2.4 %
Total Output Error [7] ETOT(HT) Measured using full-scale IP, TOP = 25C to 150C 2.4 1.5 2.4 %
ETOT(LT) Measured using full-scale IP, TOP = 40C to 25C 3.5 2 3.5 %
Total Output Error Drift Over TOP = 40C to 150C, shift after AEC-Q100 grade 0
ETOT(LIFE) 1.9 0.6 1.9 %
Lifetime [3] qualificationtesting
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] This parameter may drift a maximum of SensLIFE over lifetime.
[3] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed.
Drift is a function of customer application conditions. Contact Allegro MicroSystems for further information.
[4] 3 sigma noise voltage.
[5] Drift is referred to ideal V
IOUT(QBI) = 0.5 V.
[6] This parameter may drift a maximum of V
OE(LIFE) over lifetime.
[7] This parameter may drift a maximum of E
TOT(LIFE) over lifetime.
X150B PERFORMANCE CHARACTERISTICS [1]: TOP = 40C to 125C, CBYP = 0.1 F, VCC= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP 150 150 A
SensTA Measured using full-scale IP, TA = 25C 13.01 13.33 13.65 mV/A
Sensitivity [2] Sens(TOP)HT Measured using full-scale IP, TOP = 25C to 125C 13.01 13.33 13.65 mV/A
Sens(TOP)LT Measured using full-scale IP, TOP = 40C to 25C 12.86 13.33 13.8 mV/A
TOP = 40C to 125C, shift after AEC-Q100 grade 0
Sensitivity Drift Over Lifetime [3] SensLIFE 0.24 0.08 0.24 mV/A
qualificationtesting
Noise [4] VNOISE TA= 25C, 10 nF on VIOUT pin to GND 4 mV
Nonlinearity ELIN Measured using full-scale and half-scale IP 1 1 %
VOE(TA) IP = 0 A, TA = 25C 10 4 10 mV
Electrical Offset Voltage [5][6] VOE(TOP)HT IP = 0 A, TOP = 25C to 125C 10 6 10 mV
VOE(TOP)LT IP = 0 A, TOP = 40C to 25C 20 6 20 mV
Electrical Offset Voltage Drift IP = 0 A, TOP = 40C to 125C, shift after AEC-Q100 grade 0
VOE(LIFE) 5 2 5 mV
Over Lifetime [3] qualification testing
Magnetic Offset Error IERROM IP = 0 A, TA = 25C, after excursion of 150 A 225 400 mA
ETOT(TA) Measured using full-scale IP, TA = 25C 2.4 0.5 2.4 %
Total Output Error [7] ETOT(HT) Measured using full-scale IP, TOP = 25C to 125C 2.4 1.5 2.4 %
ETOT(LT) Measured using full-scale IP, TOP = 40C to 25C 3.5 2 3.5 %
Total Output Error Drift Over TOP = 40C to 125C, shift after AEC-Q100 grade 0
ETOT(LIFE) 1.9 0.6 1.9 %
Lifetime [3] qualificationtesting
Symmetry ESYM Over half-scale of IP 99 100 101 %
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] This parameter may drift a maximum of SensLIFE over lifetime.
[3] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed.
Drift is a function of customer application conditions. Contact Allegro MicroSystems for further information.
[4] 3 sigma noise voltage.
[5] Drift is referred to ideal V
IOUT(QBI) = 2.5 V.
[6] This parameter may drift a maximum of V
OE(LIFE) over lifetime.
[7] This parameter may drift a maximum of E
TOT(LIFE) over lifetime.
X150U PERFORMANCE CHARACTERISTICS [1]: TOP = 40C to 125C, CBYP = 0.1 F, VCC= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP 0 150 A
SensTA Measured using full-scale IP, TA = 25C 26.02 26.66 27.30 mV/A
Sensitivity [2] Sens(TOP)HT Measured using full-scale IP, TOP = 25C to 125C 26.02 26.66 27.30 mV/A
Sens(TOP)LT Measured using full-scale IP, TOP = 40C to 25C 25.73 26.66 27.59 mV/A
TOP = 40C to 125C, shift after AEC-Q100 grade 0
Sensitivity Drift Over Lifetime [3] SensLIFE 0.48 0.16 0.48 mV/A
qualificationtesting
Noise [4] VNOISE TA= 25C, 10 nF on VIOUT pin to GND 6 mV
Nonlinearity ELIN Measured using full-scale and half-scale IP 1 1 %
VOE(TA) IP = 0 A, TA = 25C 10 4 10 mV
Electrical Offset Voltage [5][6] VOE(TOP)HT IP = 0 A, TOP = 25C to 125C 10 6 10 mV
VOE(TOP)LT IP = 0 A, TOP = 40C to 25C 20 6 20 mV
Electrical Offset Voltage Drift IP = 0 A, TOP = 40C to 125C, shift after AEC-Q100 grade 0
VOE(LIFE) 5 2 5 mV
Over Lifetime [3] qualification testing
Magnetic Offset Error IERROM IP = 0 A, TA = 25C, after excursion of 150 A 225 400 mA
ETOT(TA) Measured using full-scale IP, TA = 25C 2.4 0.5 2.4 %
Total Output Error [7] ETOT(HT) Measured using full-scale IP, TOP = 25C to 125C 2.4 1.5 2.4 %
ETOT(LT) Measured using full-scale IP, TOP = 40C to 25C 3.5 2 3.5 %
Total Output Error Drift Over TOP = 40C to 125C, shift after AEC-Q100 grade 0
ETOT(LIFE) 1.9 0.6 1.9 %
Lifetime [3] qualificationtesting
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] This parameter may drift a maximum of SensLIFE over lifetime.
[3] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed.
Drift is a function of customer application conditions. Contact Allegro MicroSystems for further information.
[4] 3 sigma noise voltage.
[5] Drift is referred to ideal V
IOUT(QBI) = 0.5 V.
[6] This parameter may drift a maximum of V
OE(LIFE) over lifetime.
[7] This parameter may drift a maximum of E
TOT(LIFE) over lifetime.
X200B PERFORMANCE CHARACTERISTICS [1]: TOP = 40C to 85C, CBYP = 0.1 F, VCC= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP 200 200 A
SensTA Measured using full-scale IP, TA = 25C 9.76 10 10.24 mV/A
Sensitivity [2] Sens(TOP)HT Measured using full-scale IP, TOP = 25C to 85C 9.76 10 10.24 mV/A
Sens(TOP)LT Measured using full-scale IP, TOP = 40C to 25C 9.65 10 10.35 mV/A
TOP = 40C to 85C, shift after AEC-Q100 grade 0
Sensitivity Drift Over Lifetime [3] SensLIFE 0.18 0.06 0.18 mV/A
qualificationtesting
Noise [4] VNOISE TA= 25C, 10 nF on VIOUT pin to GND 3 mV
Nonlinearity ELIN Measured using full-scale and half-scale IP 1 1 %
VOE(TA) IP = 0 A, TA = 25C 10 4 10 mV
Electrical Offset Voltage [5][6] VOE(TOP)HT IP = 0 A, TOP = 25C to 85C 10 6 10 mV
VOE(TOP)LT IP = 0 A, TOP = 40C to 25C 20 6 20 mV
Electrical Offset Voltage Drift IP = 0 A, TOP = 40C to 85C, shift after AEC-Q100 grade 0
VOE(LIFE) 5 2 5 mV
Over Lifetime [3] qualification testing
Magnetic Offset Error IERROM IP = 0 A, TA = 25C, after excursion of 200 A 250 575 mA
ETOT(TA) Measured using full-scale IP, TA = 25C 2.4 0.5 2.4 %
Total Output Error [7] ETOT(HT) Measured using full-scale IP, TOP = 25C to 85C 2.4 1.5 2.4 %
ETOT(LT) Measured using full-scale IP, TOP = 40C to 25C 3.5 2 3.5 %
Total Output Error Drift Over TOP = 40C to 85C, shift after AEC-Q100 grade 0
ETOT(LIFE) 1.9 0.6 1.9 %
Lifetime [3] qualificationtesting
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] This parameter may drift a maximum of SensLIFE over lifetime.
[3] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed. Drift
is a function of customer application conditions. Contact Allegro MicroSystems for further information.
[4] 3 sigma noise voltage.
[5] Drift is referred to ideal V
IOUT(QBI) = 2.5 V.
[6] This parameter may drift a maximum of V
OE(LIFE) over lifetime.
[7] This parameter may drift a maximum of E
TOT(LIFE) over lifetime.
X200U PERFORMANCE CHARACTERISTICS [1]: TOP = 40C to 85C, CBYP = 0.1 F, VCC= 5 V, unless otherwise specified
Characteristic Symbol Test Conditions Min. Typ. Max. Unit
Primary Sampled Current IP 0 200 A
SensTA Measured using full-scale IP, TA = 25C 19.52 20 20.48 mV/A
Sensitivity [2] Sens(TOP)HT Measured using full-scale IP, TOP = 25C to 85C 19.52 20 20.48 mV/A
Sens(TOP)LT Measured using full-scale IP, TOP = 40C to 25C 19.3 20 20.7 mV/A
TOP = 40C to 85C, shift after AEC-Q100 grade 0
Sensitivity Drift Over Lifetime [3] SensLIFE 0.36 0.12 0.36 mV/A
qualificationtesting
Noise [4] VNOISE TA= 25C, 10 nF on VIOUT pin to GND 6 mV
Nonlinearity ELIN Measured using full-scale and half-scale IP 1 1 %
VOE(TA) IP = 0 A, TA = 25C 10 4 10 mV
Electrical Offset Voltage [5][6] VOE(TOP)HT IP = 0 A, TOP = 25C to 85C 10 6 10 mV
VOE(TOP)LT IP = 0 A, TOP = 40C to 25C 20 6 20 mV
Electrical Offset Voltage Drift IP = 0 A, TOP = 40C to 85C, shift after AEC-Q100 grade 0
VOE(LIFE) 5 2 5 mV
Over Lifetime [3] qualification testing
Magnetic Offset Error IERROM IP = 0 A, TA = 25C, after excursion of 200 A 250 575 mA
ETOT(TA) Measured using full-scale IP, TA = 25C 2.4 0.5 2.4 %
Total Output Error [7] ETOT(HT) Measured using full-scale IP, TOP = 25C to 85C 2.4 1.5 2.4 %
ETOT(LT) Measured using full-scale IP, TOP = 40C to 25C 3.5 2 3.5 %
Total Output Error Drift Over TOP = 40C to 85C, shift after AEC-Q100 grade 0
ETOT(LIFE) 1.9 0.6 1.9 %
Lifetime [3] qualificationtesting
[1] See Characteristic Performance Data page for parameter distributions over temperature range.
[2] This parameter may drift a maximum of SensLIFE over lifetime.
[3] Based on characterization data obtained during standardized stress test for Qualification of Integrated Circuits, including Package Hysteresis. Cannot be guaranteed.
Drift is a function of customer application conditions. Contact Allegro MicroSystems for further information.
[4] 3 sigma noise voltage.
[5] Drift is referred to ideal V
IOUT(QBI) = 0.5 V.
[6] This parameter may drift a maximum of V
OE(LIFE) over lifetime.
[7] This parameter may drift a maximum of E
TOT(LIFE) over lifetime.
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
6 41.0
4 40.8
40.6
Sens (mV/A)
2
40.4
VOE (mV)
0
40.2
-2
40.0
-4 39.8
-6 39.6
-8 39.4
50 -25 0 25 50 75 100 125 150 50 -25 0 25 50 75 100 125 150
TA (C) TA (C)
Nonlinearity versus Ambient Temperature Magnetic Offset Error versus Ambient Temperature
0 250
-0.1
-0.2 200
-0.3
ELIN (%)
IERROM (mA)
150
-0.4
-0.5
100
-0.6
-0.7
50
-0.8
-0.9 0
50 -25 0 25 50 75 100 125 150 50 -25 0 25 50 75 100 125 150
TA (C) TA (C)
0.5
0
-0.5
-1.0
-1.5
50 -25 0 25 50 75 100 125 150
TA (C)
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
8 20.4
6 20.3
4 20.2
Sens (mV/A)
2 20.1
VOE (mV)
0 20.0
-2 19.9
-4 19.8
-6 19.7
-8 19.6
50 -25 0 25 50 75 100 125 150 50 -25 0 25 50 75 100 125 150
TA (C) TA (C)
Nonlinearity versus Ambient Temperature Magnetic Offset Error versus Ambient Temperature
0 400
-0.1 350
300
-0.2
250
ELIN (%)
IERROM (mA)
-0.3
200
-0.4
150
-0.5
100
-0.6
50
-0.7 0
50 -25 0 25 50 75 100 125 150 50 -25 0 25 50 75 100 125 150
TA (C) TA (C)
0
-0.5
-1.0
-1.5
-2.0
50 -25 0 25 50 75 100 125 150
TA (C)
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
8 13.60
6 13.55
13.50
Sens (mV/A)
4 13.45
VOE (mV)
2 13.40
13.35
0 13.30
-2 13.25
13.20
-4
13.15
-6 13.10
50 -25 0 25 50 75 100 125 150 50 -25 0 25 50 75 100 125 150
TA (C) TA (C)
Nonlinearity versus Ambient Temperature Magnetic Offset Error versus Ambient Temperature
0 450
-0.1 400
-0.2 350
300
-0.3
ELIN (%)
IERROM (mA)
250
-0.4
200
-0.5
150
-0.6
100
-0.7 50
-0.8 0
50 -25 0 25 50 75 100 125 150 50 -25 0 25 50 75 100 125 150
TA (C) TA (C)
0
-0.5
-1.0
-1.5
-2.0
50 -25 0 25 50 75 100 125 150
TA (C)
Electrical Offset Voltage versus Ambient Temperature Sensitivity versus Ambient Temperature
6 10.15
4 10.10
Sens (mV/A)
10.05
2
VOE (mV)
10.00
0
9.95
-2
9.90
-4 9.85
-6 9.80
50 -25 0 25 50 75 100 125 150 50 -25 0 25 50 75 100 125 150
TA (C) TA (C)
Nonlinearity versus Ambient Temperature Magnetic Offset Error versus Ambient Temperature
0 600
-0.1 500
-0.2 400
ELIN (%)
IERROM (mA)
-0.3 300
-0.4 200
-0.5 100
-0.6 0
50 -25 0 25 50 75 100 125 150 50 -25 0 25 50 75 100 125 150
TA (C) TA (C)
1.0
0.5
0
ETOT (%)
-0.5
-1.0
-1.5
-2.0
50 -25 0 25 50 75 100 125 150
TA (C)
Response Time
IP = 60 A , 10% to 90% rise time = 1 s, CBYPASS = 0.1 F, CL = 0.47 nF
IP = 60 A
VIOUT
80% of input
80% of output
tRESPONSE = 4.56 s
Rise Time
IP = 60 A , 10% to 90% rise time = 1 s, CBYPASS = 0.1 F, CL = 0.47 nF
IP = 60 A
VIOUT
90% of output
tr = 4.1 s
10% of output
Propagation Time
IP = 60 A , 10% to 90% rise time = 1 s, CBYPASS = 0.1 F, CL = 0.47 nF
IP = 60 A
VIOUT
tPROP = 2.4 s
Power-On Delay
IP = 60 A DC, CBYPASS = Open, CL = 0.47 nF
VCC
VCC (min)
tPOD = 88 s
90% of output
VIOUT
tUVLOE = 75.3 s
VCC
VUVLOL
VIOUT
VIOUT = 0 V
tUVLOD = 13.9 s
VCC
VCC (min)
VIOUT
90% of output
CHARACTERISTIC DEFINITIONS
Power-On Delay, tPOD , is defined as the time it takes for the out- 20
put voltage to settle within 10% of its steady-state value under 10
an applied magnetic field, after the power supply has reached its 0
Propagation Delay, tPROP t
minimum specified operating voltage, VCC(min), as shown in the
chart at right.
value.
Average
VIOUT
into normal operation. During power-down, the Reset signal is Half Scale
IP(max)
of POR and UVLO operation can be found in the Functional Decreasing VIOUT(V)
Description section.)
Accuracy
25C Only
Accuracy
Over Temp erature
FUNCTIONAL DESCRIPTION
VCC
1 2 3 5 6 7 9 10 11
4 8
5.0
VUVLOH
VUVLOL
VPORH
VPORL
tUVLOE tUVLOE
GND
Time
VOUT Slope =
VCC / 2
2.5
tPORR
tUVLOD tUVLOD
GND
High Impedance High Impedance Time
VCC
1 2 4 5 6 7
3
5.0
VUVLOH
VUVLOL
VPORH
VPORL < tUVLOE
GND
Time
VOUT
tPORR < tUVLOE
Slope = Slope =
VCC / 2 VCC / 2
2.5
tUVLOD
GND
High Impedance High Impedance Time
Regulator
Clock/Logic
Hall Element
Amp
Anti-Aliasing Tuned
LP Filter Filter
5 4
0.5 B
3 4
17.5 0.2
21.4
13.00 0.10
Branded
Face
4.40 0.10
0.8
NNNNNNN
7.00 0.10 TTT-AAA
LLLLLLL
A Dambar removal intrusion
B Perimeter through-holes recommended YYWW
14.0 0.2
4.0 0.2
3.0 0.2
0.8
5 4 1.5
1.50 0.10
1.91
23.50 0.5
NNNNNNN
TTT-AAA
13.00 0.10
7.00 0.10
A Dambar removal intrusion
B Branding scale and appearance at supplier discretion
Revision History
Number Date Description
1 December 8, 2014 Revised Selection Guide
2 January 20, 2015 Revised VPORH Typical Value
Revised VRCC, VRIOUT, IOUT(Source), IERROM (100 A and 150 A) values, and added Symmetry to
3 March 11, 2015
X150B PERFORMANCE CHARACTERISTICS table
4 April 8, 2015 Updated TUV certification
5 November 2, 2016 Updated PCB Layout Reference View in Package Outline Drawing on page 27.
6 June 5, 2017 Updated status of ACS770LCB-100U-PSF-T part variant to Last-Time Buy
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