Approved

(Not Released)
PD - TBD

IRLB4132PbF
Applications HEXFET Power MOSFET
l Optimized for UPS/Inverter Applications VDSS RDS(on) max Qg
l Low Voltage Power Tools
30V 3.5m 36nC
Benefits
D
l Best in Class Performance for UPS/Inverter
Applications
l Very Low RDS(on) at 4.5V VGS
S
D
l Ultra-Low Gate Impedance G
l Fully Characterized Avalanche Voltage
TO-220AB
and Current
l Lead-Free

G D S
Gate Drain Source

Absolute Maximum Ratings

Parameter Max. Units
VDS Drain-to-Source Voltage 30
V
VGS Gate-to-Source Voltage 20
ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Silicon Limited) f
150
ID @ TC = 100C Continuous Drain Current, VGS @ 10V (Silicon Limited) 100
A
ID @ TC = 25C Continuous Drain Current, VGS @ 10V (Package Limited) 78
IDM Pulsed Drain Current c 620
PD @TC = 25C Maximum Power Dissipation h 140
W
PD @TC = 100C Maximum Power Dissipation h 68
Linear Derating Factor 0.90 W/C
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw 10lbfxin (1.1N m) x
Thermal Resistance
Parameter Typ. Max. Units
RJC Junction-to-Case h 1.11
RCS Case-to-Sink, Flat Greased Surface 0.5 C/W
RJA Junction-to-Ambient g 62

Notes through are on page 9

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IRLB4132PbF
Static @ TJ = 25C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 V VGS = 0V, ID = 250A
VDSS/TJ Breakdown Voltage Temp. Coefficient 17 mV/C Reference to 25C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance 2.5 3.5 VGS = 10V, ID = 40A e
3.5 4.5
m
VGS = 4.5V, ID = 32A e
VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V
VDS = VGS, ID = 100A
VGS(th)/TJ Gate Threshold Voltage Coefficient -7.7 mV/C
IDSS Drain-to-Source Leakage Current 1.0 VDS = 24V, VGS = 0V
A
100 VDS = 24V, VGS = 0V, TJ = 125C
IGSS Gate-to-Source Forward Leakage 100 VGS = 20V
nA
Gate-to-Source Reverse Leakage -100 VGS = -20V
gfs Forward Transconductance 190 S VDS = 15V, ID = 32A
Qg Total Gate Charge 36 54
Qgs1 Pre-Vth Gate-to-Source Charge 9.1 VDS = 15V
Qgs2 Post-Vth Gate-to-Source Charge 4.2 nC VGS = 4.5V
Qgd Gate-to-Drain Charge 13 ID = 32A
Qgodr Gate Charge Overdrive 13
Qsw Switch Charge (Qgs2 + Qgd) 17.2
Qoss Output Charge 21 nC VDS = 16V, VGS = 0V
RG Gate Resistance 0.85 1.5
td(on) Turn-On Delay Time 23 VDD = 15V, VGS = 4.5V e
tr Rise Time 92 ID = 32A
ns
td(off) Turn-Off Delay Time 25 RG = 1.8
tf Fall Time 36
Ciss Input Capacitance 5110 VGS = 0V
Coss Output Capacitance 960 pF VDS = 15V
Crss Reverse Transfer Capacitance 440 = 1.0MHz

Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energyd 310 mJ
EAS Single Pulse Avalanche Energyi 900 mJ
IAR Avalanche Currentc 32 A
EAR Repetitive Avalanche Energy c 14 mJ

Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current
(Body Diode)

150 f MOSFET symbol
showing the
A
ISM Pulsed Source Current integral reverse
620
(Body Diode)c p-n junction diode.
VSD Diode Forward Voltage 1.0 V TJ = 25C, IS = 32A, VGS = 0V e
trr Reverse Recovery Time 29 44 ns TJ = 25C, IF = 32A, VDD = 15V
Qrr Reverse Recovery Charge 49 74 nC di/dt = 200A/s e
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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 IRLB4132PbF

1000 1000
VGS VGS
TOP 10V TOP 10V
9.0V 9.0V
7.0V 7.0V

ID, Drain-to-Source Current (A)

ID, Drain-to-Source Current (A)

5.0V 5.0V
4.5V 4.5V
4.0V 4.0V
3.5V 3.5V
BOTTOM 3.0V BOTTOM 3.0V

100 100

60s PULSE WIDTH 3.0V

Tj = 25C

60s PULSE WIDTH

3.0V Tj = 175C
10 10
0.1 1 10 100 0.1 1 10 100
V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.0
ID = 78A
RDS(on) , Drain-to-Source On Resistance

T J = 25C
VGS = 10V
T J = 175C
ID, Drain-to-Source Current (A)

100 1.5
(Normalized)

10 1.0

VDS = 15V
60s PULSE WIDTH
1.0 0.5
1 2 3 4 5 6 7 8 -60 -40 -20 0 20 40 60 80 100120140160180
T J , Junction Temperature (C)
VGS, Gate-to-Source Voltage (V)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance

vs. Temperature
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 IRLB4132PbF

100000 14.0
VGS = 0V, f = 1 MHZ
C iss = C gs + C gd, C ds SHORTED
ID= 32A
C rss = C gd 12.0 VDS= 24V

VGS, Gate-to-Source Voltage (V)

C oss = C ds + C gd VDS= 15V
10.0
C, Capacitance (pF)

10000
Ciss
8.0

Coss 6.0
1000
Crss 4.0

2.0

100 0.0
1 10 100 0 20 40 60 80 100
VDS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC)

Fig 5. Typical Capacitance vs. Fig 6. Typical Gate Charge vs.

Drain-to-Source Voltage Gate-to-Source Voltage

1000 10000

OPERATION IN THIS AREA

T J = 175C LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)

100 1000

100sec

100 1msec
10

10msec
TJ = 25C
1 10
Tc = 25C
Tj = 175C
VGS = 0V Single Pulse DC
0.1 1
0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-to-Source Voltage (V)

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area

Forward Voltage
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 IRLB4132PbF

160 2.5

140

VGS(th) , Gate Threshold Voltage (V)

Limited By Package

120 2.0
ID, Drain Current (A)

100

80 1.5 ID = 100A
ID = 250A
60
ID = 1.0mA
40 1.0

20

0 0.5
25 50 75 100 125 150 175 -75 -50 -25 0 25 50 75 100 125 150 175 200
T C , Case Temperature (C) T J , Temperature ( C )

Fig 9. Maximum Drain Current vs. Fig 10. Threshold Voltage vs. Temperature
Case Temperature

10
Thermal Response ( Z thJC ) C/W

1
D = 0.50
0.20
0.1 0.10
0.05
R1 R2 R3 R4
Ri (C/W) i (sec)
0.02 R1 R2 R3 R4
0.85073 0.006515
J C
0.01 0.01 J 0.00562 8.246536
1 2 3 4
1 2 3 4
0.00099 6.148011
Ci= i/Ri
Ci i/Ri 0.25266 0.000371
0.001 SINGLE PULSE Notes:
( THERMAL RESPONSE ) 1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case

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 IRLB4132PbF

9 1400
RDS(on), Drain-to -Source On Resistance (m )

EAS , Single Pulse Avalanche Energy (mJ)

ID = 40A ID
8 1200 TOP 11A
18A
7 1000 BOTTOM 32A

6 800

5 600
T J = 125C
4 400

T J = 25C
3 200

2 0
3 4 5 6 7 8 9 10 25 50 75 100 125 150 175

VGS, Gate -to -Source Voltage (V) Starting T J , Junction Temperature (C)

Fig 12. On-Resistance vs. Gate Voltage Fig 13c. Maximum Avalanche Energy
vs. Drain Current

15V
RD
V DS

L DRIVER V GS
VDS D.U.T.
RG
+
-V DD
RG D.U.T +
V
- DD
IAS A VGS
20V
VGS
tp 0.01 Pulse Width 1 s
Duty Factor 0.1 %

Fig 13a. Unclamped Inductive Test Circuit Fig 14a. Switching Time Test Circuit
V(BR)DSS
VDS
tp
90%

10%
VGS
td(on) tr t d(off) tf
I AS
Fig 14b. Switching Time Waveforms
Fig 13b. Unclamped Inductive Waveforms
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 IRLB4132PbF

Driver Gate Drive

P.W.
D.U.T P.W.
Period D=
Period
+

VGS=10V *
Circuit Layout Considerations
Low Stray Inductance
Ground Plane
- Low Leakage Inductance
D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
-
+ Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

RG dv/dt controlled by RG V DD Re-Applied

Driver same type as D.U.T. + Voltage Body Diode Forward Drop
I SD controlled by Duty Factor "D" - Inductor Curent
D.U.T. - Device Under Test

Ripple 5% ISD

* VGS = 5V for Logic Level Devices

Fig 15. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET Power MOSFETs

Current Regulator
Same Type as D.U.T.
Id
Vds

50K
Vgs
12V .2F
.3F

+
V
D.U.T. - DS
Vgs(th)
VGS

3mA

IG ID Qgodr Qgd Qgs2 Qgs1

Current Sampling Resistors

Fig 16. Gate Charge Test Circuit Fig 17. Gate Charge Waveform

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IRLB4132PbF
TO-220AB Package Outline (Dimensions are shown in millimeters (inches))

TO-220AB packages are not recommended for Surface Mount Application.

Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

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 IRLB4132PbF

TO-220AB Part Marking Information

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Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/

Notes:

`Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25C, L = 0.61mH, RG = 25,
IAS = 32A.
Pulse width 400s; duty cycle 2%.
Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 78A.
When mounted on 1" square PCB (FR-4 or G-10 Material).
For recommended footprint and soldering techniques refer
to application note #AN-994.
R is measured at TJ approximately 90C.
Starting TJ = 25C, L = 0.50mH, RG = 25,
IAS = 60A, VDD = 25V.

Data and specifications subject to change without notice.

This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IRs Web site.

IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2009
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