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College of Engineering
Dept. of Electrical Power Eng.Class: 3rd
Dept. of Electronic Eng. Class:4th
Power Electronics
Power Diode:
Fig 2
VBB - VBE
RB = ----------------------
IB
VCC= IC RC + VCE
VCC-VCE
RC = ------------------
2- At saturation region:
VCE (sat) = 0
VCC
IC (sat) = ------------
Rc
IC (sat)
= -----------------
IB (sat)
VCC-VCE 30-15
IC (sat) = ----------------- = ------------------ =14 A
RC 2*10
IC (sat) 14*10
() = ------------ = --------------- = 0.3 A
Choose: 45
Vin - VBE
RB = ------------ =944 1K
IB (per)
EX: 2
For the circuit shown below (VBE= 0.65 V, = 50, and Vin=1V)
Calculate the value of (R1, RB) which make the transistor works
in saturation region.
VCC 15
IC (sat) = ------------ = ---------------- = 30A
Rc 500
IC (sat)
() = -------------------- = 0.6 A
I2 = IB (sat) = 0.6 A
Vin- VBE
RB = --------------- = 0.583 K
I2
Improvement of Switching Time:
The (toff) can improved by connecting a capacitor in
parallel with the base resistor RB to attract the base charge and
then reduce the storage time (ts) which reduces the cut off time.
1
=RC , f = ------
T
Ex: 3
Using the UJT to construct an oscillator as shown below,
calculate?
1- Minimum & Maximum frequency of pulses which can be
generated. (93.2 Hz, 4.33 kHz)
2- Maximum capacitor voltage. (8.4 V)
IE=emitter current
Applications:
MOSFET:
The metal-oxide semiconductor field effect transistor
(MOSFET) is a transistor device used as fast acting switch at
power levels. It is mostly suited for low-power applications.
The device has three terminals: the Gate (analogous to the base
in a BJT); the drain (analogous to the collector); and the source
(analogous to the emitter).The bulk or substrate of the device is
shown to be electrically connected to the source, and there for
does not appear in the electrical circuit diagram as a separate
terminal. The device is controlled by a voltage signal between
the gate (G) and the source (S).the current flows from D S by
controlled VG. If a positive voltage 3V is applied to the gate a
negative charge is induced on silicon surface under the gate
which causes P layer to become N layer allowing electrons to
flow.
Fig2A Fig 2B
2
Rmax ------- V
Ig
V = supply voltage
Ig = gate current
In spit of simplicity and alow components of these circuits it is
difficuilt to get a firing (trigger)angle greater than 90.
ii/Using resistor and capacitor:
Fig 3
iii/Synchronization and Timing:
EX:4/
For the circuit is shown in Fig bellow calculate the value of
(variable R)to get a trigger angle of (30).where Ig= 40 mA
,Vg=3V,and Vs=350 sin wt.
Sol:
Vs= Ig*R+VD +Vg
EX :5/
Sol: /
Vgt 3
RGK =------------ = -----------------=20
Igt 150*10
V
Rmax +RGK =----------- Rmax = 2243
Igt(min)
Sin t 1 t = 90 max = 90
Fig 5
3-Triggering by using current pulse:
This is the best method to firing the thyristor by applying a
pulse of current to the gate terminal. These pulses may have a
short time (spik)or wide time or a series of pulses. The firing
(triggering) pulses must have a sufficient amplitude and width
as shown below.
Amplitude
Width
Fig 6
There are many ways to generate a firing pulse:
i/ Zero-Crossing Detector:
EX:6/
Explain the job of each elements. Calculate Vdc, Vp, Ic, and
when V supply =6V,50 Hz C=100F Rb=8.2 K, Rc=1K,.
EX:7/
Fig 9
turn-on (top elements), and turn-off (bottom elements) snubber
circuits for thyristors
di/dt protection:
Fig 11
Cooling:
Power losses associated with operation of the semiconductor
devices may be listed:
1- The major source of loss at mains and lower frequency
operations during forward condition which is a function of the
forword volt-drop and conduction current.
Fig.12
T1-T2
R=-------------
P
P in watt, T in C, R in C/W
The heat flow is from junction to base to heat sink to the
surrounding. The total thermal resistance will be the series
addition of the individual thermal resistance.
Tvj=Ta +PRja
T1-T2 124-40
R=------------ p= --------------------- =22.4 W
P 3.8
EX:10/
In apractical application during switch- on from cold condition
of 40 C ,athyristor expriences asurge giving apower los of
2000W for 10 ms. calculate the junction temperature if the
transient thermal impedance for this time is 0.03 C/W.
EX:11/
With LC Load:
when S is closed at t=0,the charging current i of the capacitor is
expressed
Fig 15
EX:12/
EX:14/
Performance Parameters:
EX:15/
EX:16/
EX:17/
If the rectifier as shown below has a purely resistive load
of R, determine:
Fig26
Fig 28
Fig 29
Three Phase Bridge Rectifiers(Full wave Rectifier)
It can operate with or without a transformer and gives six-pluse
ripples on the output voltages.The pair of diodes which are
connected between that pair of supply lines having the highest
EX: 20/
Vdc=179.2V
tan =WL /R
=57.5
Wtq = = -
tq =8.3 m sec.
Because > the current is continuous.
=/6 continious
Vdc=281.65V
at =2 /3(120)discontious
Forced Commutations:
2. Impulse-commutation
EX:26/
(If Lc=L1=L2=L3)
Vx = 6 fLc Idc (where f is supply frequency in hertz)
SOL:
SOL:
Vs (1-k)
i=--------------- kT
L
1
T = 2 f t f= = 50 Hz T= 20 .
2
3602.5
= 45 + = ()
20
Vo= 75.3 V
Po= (Vo) /7 =810 watt
Disadvantages:
(Inverter)
Vn
Harmonic Factor, HF: is defined as HFn = ---------
V1
EX1:
A Single Phase Bridge Inverter shown in fig 3 R=2.4 and dc
input Vs is =48V .Determine the :
a)rms output voltage at the fundamental frequency,V1.
b)output power Po.
c)average and peak currents of each transistor.
d)peak reverse blocking voltage of each transistor, VB.
e)total harmonic distortion THD.
f)distortion factor DF.
e)harmonic factor and distortion factor of lowest-order
harmonic.
Solution:
4Vs
a) V1=------ = 0.9 Vs=0.9* 48 =43.2 V
2
2 To/2
b) V0= (------- Vs dt) = Vs = 48V.
To 0
The output power Po=Vs/R=960W.
c) The peak transistor current Ip=48/2.4=20A.Since each
transistor conduct for a 50% duty cycle, the ID of each
transistor is 0.5 *20=10A.
d) VBR=48V.
e) 4Vs
V1=------ = 0.9 Vs =0.9*48=43.2V the rms harmonic
voltage Vn
2
is Vh= ( Vn)= (Vo - V1) =o.435 Vs
n=3,5,7
f) 1 Vn
DF= ------ [ ( ----- )]=0.03424 Vs /
0.9Vs=3.804%
V1 n=2,3. n
rd
g)The lowest-order harmonic is the 3 ,V3=V1/3
V3
Harmonic Factor, HF3= --------- = 1/3 =33.33%
V1
V3/3
DF3= ------- =1/27=3.704%
V1
EX:2/H.W/
An inductive load of resistive of 10 and inductive of 10mH is
to be supplied with a Quasi Square waveform voltage, using
single-phase bridge inverter. If the on periods is to be 1/2 of the
total period ,load frequency = 200Hz and the dc supply
available is 200V, trace with calculated dimensions for the first
cycle.
A) Load voltage waveform.
B) Load current waveform.
Solution:
Quiz Problems :
vbc and vca can be found by phase shifting vab by 120 and
240respectively.the triplen harmonics n=3,9,15. would be
zero in the line to line voltage. The V rms line to line
VL= 0.8165 Vs
For n=1 the rms value of fundamental component can be found
from the peak magnitude .
4Vs cos 30
VL1= ------------------ =0.7797Vs
2
With resistive load the diode across the transistors have no
functions. If the load is inductive the current in each arm of the
inverter would be delayed to its voltage as shown in fig6.
In single pulse PWM control there is only one pulse per half
cycle and the width of the pulse is varied to control the inverter
output voltage. Fig 7 shows the generation of gating signals and
output voltage of single phase full bridge inverters. The gating
signals are generated by comparing a rectangular reference
signal of amplitude Ar , with a triangular carrier wave of
amplitude Ac.The frequency of the carrier wave determines the
fundamental frequency of output voltage. By varying Ar from 0
to Ac ,the pulse width can be varied from 0 to 180.The ratio
of Ar to Ac is the control variable and defined as the modulation
index.
Ar
M = --------
Ac
The rms output voltage can be found from
2 (+)/2 /
Vo = [---- Vsd(wt) ] =Vs -----
4Vs n
v0(t)= -------------- sin ------ sin nwt
n 2
n=1,3,5
fc
P= --------
2fo
2p (/p+)/2 / p
Vo = [---- Vsd(wt) ] =Vs -----
2 (/p-)/2
Fig 11 indicates that the widths of pulses that are nearer the
peak of the sine wave do not change significant with the
variation of modulation index. This is due to the characteristics
of a sine wave , and the SPWM
technique can be modified so that the carrier wave is applied
during the first and last 60intervals per half cycle. This type of
modulation is known as MSPWM as shown in fig 13 .The
fundamental component is increased and its harmonic
characteristics are improved . It reduces the number of
switching of power devices and also reduces switching losses.
The number of pulses ,q, in the 60 period is normally related to
the frequency ratio. particularly in the three phase inverter by
fc
------ = 6q + 3
fo
= if
2Vs
vao= -------------- sin nwt , then
n
n=1,3,5
2Vs
vbo= -------------- sin n(wt-) ,
n
n=1,3,5
4Vs n
vab= ----------{ sin ----- cos n ( wt-/2 ) }
n 2
n=1,3,5
4Vs
V1 = --------- sin -----
2 2
EX:7/
A single phase full bridge inverter controls the power in a
resistive load Vdc is Vs =220V and uniform pulse-width
modulation with five pulses per half-cycle is used .For the
Harmonic reduction:
This equation indicates that the nth harmonic can be eliminated
by a proper choice displacement angle ,, if Sin n / 2 = 0 or
= 360 / n
4Vs n
vab= ----------{ sin ----- cos n ( wt-/2 ) }
n 2
n=1,3,5
Where
.b
EX:8/
A single phase fullwave inverter uses multi notches and is
required to eliminate the 5th ,7th,11th and 13th harmonics from
the output wave. Determine the number of notches and their
angles.
Quiz Problems
(1) A PWM inverter is operated from a dc link voltage of 600
volts. The maximum rms line voltage (fundamental component)
will be less than or equal to:
(a) 600 volts (b) 300 volts
(c) 467 volts (d) 582 volts