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The first term on the right-hand side is called the emitter efficiency y. which
measures the injected hole current to the total emitter current
Bipolar Transistor Active Mode
Therefore
For a well-designed transistor, both and approach unity, and a0 is very close to 1.
We can express the collector current in terms of 0. The collector current can be described
by substituting Eqs. 6 and 7 into Eq. 2:
Where ICn corresponds to the collector-base current flowing with the emitter open-circuited
(IE = 0). We shall designate ICn as ICBO, where the first two subscripts (CB) refer to the two
terminals between which the current (or voltage) is measured and the third subscript (o)
refers to the state of the third terminal with respect to the second. In the present case, ICBO
designates the leakage current between the collector and the base with the emitter-base
junction open. The collector current for the common- base configuration is then given by
We have now developed a set of expression for the p-n-p transistor operated in the active
mode. In the next section, we shall study the static current-voltage characterictics and
derive equations for the terminal currents in terms of suchs semiconductor parameters as
doping and minority carrier lifetime
Bipolar Transistor Static Characteristics
4.2 STATIC CHARACTERISTICS OF BIPOLAR TRANSISTORS
Solving for IC